SOT-23-6 Plastic-Encapsulate MOSFETS · 2020. 5. 11. ·...
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 V(BR)DSS RDS(on)MAX I D 20V 0.022 Ω @ 4.5V 6.0A 0.030 Ω @ 2.5V MARKING Equivalent Circuit S8205A SOT-23-6 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package Dual N-Channel MOSFET APPLICATION Battery Protection Load Switch Power Management SOT-23-6 ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 Gate-Source Voltage V GS ±10 V Continuous Drain Current I D A Pulsed Drain Current (note 1) I DM 20 A Thermal Resistance from Junction to Ambient (note 2) R θJA 100 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V 6 S8205A Max Y :year code W :week code 8205A www.sztuofeng.com Dec,2019 V1.1
Transcript of SOT-23-6 Plastic-Encapsulate MOSFETS · 2020. 5. 11. ·...
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
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V(BR)DSS RDS(on)MAX ID
20V0.022Ω @ 4.5V
6.0A0.030Ω @ 2.5V
MARKING
Equivalent Circuit
S8205A SOT-23-6 Plastic-Encapsulate MOSFETS
FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package
Dual N-Channel MOSFET
APPLICATION Battery Protection Load Switch Power Management
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS ±10 V
Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 20 A
Thermal Resistance from Junction to Ambient (note 2) RθJA 100 /W Junction Temperature TJ 150
Storage Temperature TSTG -55~+150
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260
V
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MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 unless otherwise specified
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
Parameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERICTISCS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 500 nA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 V
Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =5A mΩ
VGS =2.5V, ID =4A 30 mΩ
Forward tranconductance (note 3) gFS VDS =5V, ID =5A 10 S
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss
VDS =8V,VGS =0V,f =1MHz
800 pF
Output Capacitance Coss 155 pF
Reverse Transfer Capacitance Crss 125 pF
SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time td(on)
VDD=10V,VGS=4V,
ID=1A,RGEN=10Ω
18 ns
Turn-on rise time tr 4.8 ns
Turn-off delay time td(off) 43.5 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg
VDS =10V,VGS =4.5V,ID=4A 11 nC
Gate-Source Charge Qgs 2.2 nC
Gate-Drain Charge Qgd 2.5 nC
Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
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Typical Electrical and Thermal Characteristics
Vgs Rgen
Vin
G
Vdd
RlVout
S
D
Figure 1:Switching Test Circuit
TJ-Junction Temperature()
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V) Figure 5 Output Characteristics
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off)tf
90%
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%90%
tr
ton
90%
10%
toff
td(off)tf
90%
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 4 Drain Current
ID- Drain Current (A) Figure 6 Drain-Source On-Resistance
PD
P
ower
(W)
I D- D
rain
Cur
rent
(A）
R
dson
On-
Res
ista
nce(
mΩ
)
I D- D
rain
Cur
rent
(A)
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC) Figure 11 Gate Charge
TJ-Junction Temperature() Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds
Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward
I D- D
rain
Cur
rent
(A)
Rds
on O
n-R
esis
tanc
e(mΩ
) V
gs G
ate-
Sou
rce
Volta
ge (V
)
Nor
mal
ized
On-
Res
ista
nce
C C
apac
itanc
e (p
F)
I s- R
ever
se D
rain
Cur
rent
(A)
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance
r(t),
Nor
mal
ized
Effe
ctiv
e Tr
ansi
ent T
herm
al Im
peda
nce
I D- D
rain
Cur
rent
(A)
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23-6 Plastic-Encapsulate MOSFETS
SOT23-6 Package Information
S8205A
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