Product Standards

MOS FET

FC6K3339ZL

(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)

 Absolute Maximum Ratings Ta = 25℃

Note *1 Mounted on FR4 board (25.4mm × 25.4mm × t1.0mm)

*2 Pulse width = 10 μs, Duty cycle  1 %

*Di1 : Body Diode contained in MOSFET structure

Page

FC6K3339ZL Resistors, Zener Diode installed separate type dual N-channel MOS FET

For passive cell balancing circuits Unit : mm

 Features

Source2

Gate2

Halogen-free / RoHS compliant

 Marking Symbol :6J

 Packaging

 Build in Gate Resistor, Gate-source Resistor and Zener Diode

 Drain-source ON-state Resistance : RDS(on) typ. = 200 mΩ (VGS = 4.5 V)



2. Gate1 5.

Gate to Source Voltage

-55 to +150

3. Drain2 6.

Drain Current *1 ID 1.5 A

Storage Temperature Range Tstg °C

Drain Current (Pulsed) *2 IDp 15

Parameter Symbol Rating Unit

Drain1

Internal Connection

 AEC-Q101 qualified

Drain to Source Voltage VDS 30 V

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source1 4.

Code

Panasonic WSMini6-F2-B

JEITA SC-113DA

―

V+5 , -0.5VGS

mW

Channel Temperature Tch 150 °C

A

Total Power Dissipation *1 PD 700

1 of 6

2. 1

2.0

0.7

1. 7

0.130.2

1.3

(0.65)(0.65)

1 2

456

3

1 2 3

6 5 4

Di1

R2

R1 R1

R2

Di2

Di2

Di1

Doc No. TT4-EA-15081 Revision. 2

Established : 2015-10-26 Revised : 2016-07-14

Product Standards

MOS FET

FC6K3339ZL

 Electrical Characteristics Ta = 25 ℃ ± 3 ℃

Body Diode Forward Voltage

Zener Diode Forward Voltage

Zener Diode Reverse Voltage

Gate Resistance *3

Gate-source Resistance *3

Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

*3 Assured by design.

*4 Refer to Figure1, measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

Page

Drain-source Breakdown Voltage VDSS ID = 1 mA , VGS = 0 V 30

2 of 6

Parameter Symbol Conditions Min Typ Max Unit

Gate to Drain Miller Charge *3 Qgd

VDD = 15 V

VGS = 4 V

ID = 0.75 A Gate to Source Charge

*3 Qgs

QgTotal Gate Charge *3

480

5.0

R2 Rgs

Drain-source ON-state Resistance

V

Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 μA

μA

Gate-source Threshold Voltage Vth ID = 59 μA , VDS = 10 V 0.35 0.9 V

Gate-source Leakage Current IGSS VGS = 4.5 V , VDS = 0 V 30

200 280

mΩRDS(on)2 ID = 0.75 A , VGS = 2.5 V 220 310

RDS(on)3

RDS(on)1 ID = 0.75 A , VGS = 4.5 V

ID = 0.2 A , VGS = 1.5 V 300 900

kΩ

－ 200 300 400 kΩ

Di1 VSD ID = 0.75 A , VGS = 0 V 0.8 1.2 V

Di2 VF IF = 100 μA 0.8 V

VZ IZ = 1 mA V

95.0

10.5

VDS = 15 V

VGS = 0 V

f = 1 kHz

R1 Rg － 1.0 1.5 3.0

VDD = 15 V

VGS = 0 to 4 V

ID = 0.75 A

Output Capacitance *3

Reverse Transfer Capacitance *3

Turn-on Delay Time *3 *4

Rise Time *3 *4

Turn-off Delay Time *3 *4

Fall Time *3 *4

Input Capacitance *3

Coss

Crss

tr

td(on)

td(off)

tf

Ciss

0.4

pF

ns

nC

1.8

0.3

210

50

110

17.5

Doc No. TT4-EA-15081 Revision. 2

Established : 2015-10-26 Revised : 2016-07-14

Product Standards

MOS FET

FC6K3339ZL

Figure1: Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

Page 3 of 6

Vout

Vin

Vin

PW = 10μs

D.C. 1 %

D

S

G

10 %

90 %

90 %

10 %

90 %

10 %

Vin

Vout

td(on) tr td(off) tf

50 Ω

ID = 0.75A RL= 20Ω

VDD = 15 V

0 V

4 V

R1

50 Ω R2

Doc No. TT4-EA-15081 Revision. 2

Established : 2015-10-26 Revised : 2016-07-14

Product Standards

MOS FET

FC6K3339ZL

Technical Data ( reference )

Page 6

IF - VF IDS - VDS

ID - VGS

ID - VDS RDS(on) - ID

RDS(on) - VGS

4 of

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

0 0.2 0.4 0.6 0.8 1 1.2

VDS=10V

Ta = 125℃

-40℃

25℃

85℃

0

200

400

600

800

1000

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VGS = 1.5V

2.5V

4.5V

Gate-source Voltage VGS ( V )

Body Diode Forward Voltage VF ( V )

D ra

in C

u rr

e n

t ID

(

A )

Gate-source Voltage VGS ( V )

D io

d e

F o

rw a

rd C

u rr

e n

t IF

(

A )

D ra

in -s

o u

rc e

O N

-s ta

te R

e s is

ta n

c e

R

D S

( o

n )

( m

Ω )

D

ra in

-s o

u rc

e L

e a

k a

g e

C u rr

e n

t ID

S (

A )

1.E-13

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

0 10 20 30 40 50

Ta = 125℃

25℃

-40℃

85℃

Drain-source Voltage VDS ( V )

0

200

400

600

800

1000

0 1 2 3 4 5

Ta = 125℃ 85℃

25℃ -40℃

ID = 0.2A

D ra

in -s

o u

rc e

O N

-s ta

te R

e s is

ta n

c e

R

D S

( o

n )

( m

Ω )

Drain Current ID ( A )

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0 0.1 0.2 0.3 0.4 0.5 0.6

1.5V

2.5V

VGS=4.5V

Drain-source Voltage VDS ( V )

D ra

in C

u rr

e n

t ID

(

A )

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

0 0.2 0.4 0.6 0.8 1

Ta = 125℃

-40℃

25℃

85℃

Doc No. TT4-EA-15081 Revision. 2

Established : 2015-10-26 Revised : 2016-07-14

Product Standards

MOS FET

FC6K3339ZL

Technical Data ( reference )

Page 5 of 6

IGS-VGS (IF-VF) IGS-VGS (IR-VR)

Safe Operating Area Rth - tsw

0.01

0.1

1

10

100

0.1 1 10 100

PW = 10μs

500μs 1ms

10ms

DC

1s

250μs

100ms

limited by RDS(on)

0.1

1

10

100

1000

0.00010.001 0.01 0.1 1 10 100 1000

Ta = 25 ℃ ,

Mounted on FR4 board (25.4mm × 25.4mm × t1.0mm)

Drain-source Voltage VDS ( V ) Pulse Width tsw ( s )

D ra

in C

u rr

e n

t ID

( A

)

T h

e rm

a l R

e s is

ta n

c e

R th

( ℃

/W )

1.E-06

1.E-05

1.E-04

1 2 3 4 5

Ta=125℃

-40℃ 25℃

85℃

G a

te -s

o u

rc e

L e

a k a

g e

C u

rr e

n t I

G S

( A

)

Gate-source Voltage VGS ( V )

1.E-05

1.E-04

1.E-03

1.E-02

0 0.2 0.4 0.6 0.8 1 1.2

Ta=125℃

-40℃

25℃ 85℃

G a

te -s

o u

rc e

L e

a k a

g e

C u

rr e

n t -

IG S

( A

)

Gate-source Voltage -VGS ( V )

Doc No. TT4-EA-15081 Revision. 2

Established : 2015-10-26 Revised : 2016-07-14

Product Standards

MOS FET

FC6K3339ZL

Unit: mm

Page 6

WSMini6-F2-B

Land Pattern (Reference) (Unit: mm)

6 of

0.13 +0.05 -0.03

1.3±0.1

2.0±0.1

(0.65) (0.65)

2. 1±

0. 1

0 to

0 .1

(0 .2

)

0. 7±

0. 1

0.20 +0.05 -0.02

1. 7±

0. 1

1 2 3

46

(5 ° )

(0 .1

5) (5°)

5

0.65 0.65

2. 0

0.45

0. 6

Top View Side View

Front View

Bottom View

Doc No. TT4-EA-15081 Revision. 2

Established : 2015-10-26 Revised : 2016-07-14

Request for your special attention and precautions in using the technical information and semiconductors described in this book

(1) If any of the products or technical informat