Resistors, Zener Diode installed separate type dual N ... · PDF file Build in Gate Resistor,...
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Product Standards
MOS FET
FC6K3339ZL
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Absolute Maximum Ratings Ta = 25℃
Note *1 Mounted on FR4 board (25.4mm × 25.4mm × t1.0mm)
*2 Pulse width = 10 μs, Duty cycle 1 %
*Di1 : Body Diode contained in MOSFET structure
Page
FC6K3339ZL Resistors, Zener Diode installed separate type dual N-channel MOS FET
For passive cell balancing circuits Unit : mm
Features
Source2
Gate2
Halogen-free / RoHS compliant
Marking Symbol :6J
Packaging
Build in Gate Resistor, Gate-source Resistor and Zener Diode
Drain-source ON-state Resistance : RDS(on) typ. = 200 mΩ (VGS = 4.5 V)
2. Gate1 5.
Gate to Source Voltage
-55 to +150
3. Drain2 6.
Drain Current *1 ID 1.5 A
Storage Temperature Range Tstg °C
Drain Current (Pulsed) *2 IDp 15
Parameter Symbol Rating Unit
Drain1
Internal Connection
AEC-Q101 qualified
Drain to Source Voltage VDS 30 V
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source1 4.
Code
Panasonic WSMini6-F2-B
JEITA SC-113DA
―
V+5 , -0.5VGS
mW
Channel Temperature Tch 150 °C
A
Total Power Dissipation *1 PD 700
1 of 6
2. 1
2.0
0.7
1. 7
0.130.2
1.3
(0.65)(0.65)
1 2
456
3
1 2 3
6 5 4
Di1
R2
R1 R1
R2
Di2
Di2
Di1
Doc No. TT4-EA-15081 Revision. 2
Established : 2015-10-26 Revised : 2016-07-14
Product Standards
MOS FET
FC6K3339ZL
Electrical Characteristics Ta = 25 ℃ ± 3 ℃
Body Diode Forward Voltage
Zener Diode Forward Voltage
Zener Diode Reverse Voltage
Gate Resistance *3
Gate-source Resistance *3
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*3 Assured by design.
*4 Refer to Figure1, measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page
Drain-source Breakdown Voltage VDSS ID = 1 mA , VGS = 0 V 30
2 of 6
Parameter Symbol Conditions Min Typ Max Unit
Gate to Drain Miller Charge *3 Qgd
VDD = 15 V
VGS = 4 V
ID = 0.75 A Gate to Source Charge
*3 Qgs
QgTotal Gate Charge *3
480
5.0
R2 Rgs
Drain-source ON-state Resistance
V
Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 μA
μA
Gate-source Threshold Voltage Vth ID = 59 μA , VDS = 10 V 0.35 0.9 V
Gate-source Leakage Current IGSS VGS = 4.5 V , VDS = 0 V 30
200 280
mΩRDS(on)2 ID = 0.75 A , VGS = 2.5 V 220 310
RDS(on)3
RDS(on)1 ID = 0.75 A , VGS = 4.5 V
ID = 0.2 A , VGS = 1.5 V 300 900
kΩ
- 200 300 400 kΩ
Di1 VSD ID = 0.75 A , VGS = 0 V 0.8 1.2 V
Di2 VF IF = 100 μA 0.8 V
VZ IZ = 1 mA V
95.0
10.5
VDS = 15 V
VGS = 0 V
f = 1 kHz
R1 Rg - 1.0 1.5 3.0
VDD = 15 V
VGS = 0 to 4 V
ID = 0.75 A
Output Capacitance *3
Reverse Transfer Capacitance *3
Turn-on Delay Time *3 *4
Rise Time *3 *4
Turn-off Delay Time *3 *4
Fall Time *3 *4
Input Capacitance *3
Coss
Crss
tr
td(on)
td(off)
tf
Ciss
0.4
pF
ns
nC
1.8
0.3
210
50
110
17.5
Doc No. TT4-EA-15081 Revision. 2
Established : 2015-10-26 Revised : 2016-07-14
Product Standards
MOS FET
FC6K3339ZL
Figure1: Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page 3 of 6
Vout
Vin
Vin
PW = 10μs
D.C. 1 %
D
S
G
10 %
90 %
90 %
10 %
90 %
10 %
Vin
Vout
td(on) tr td(off) tf
50 Ω
ID = 0.75A RL= 20Ω
VDD = 15 V
0 V
4 V
R1
50 Ω R2
Doc No. TT4-EA-15081 Revision. 2
Established : 2015-10-26 Revised : 2016-07-14
Product Standards
MOS FET
FC6K3339ZL
Technical Data ( reference )
Page 6
IF - VF IDS - VDS
ID - VGS
ID - VDS RDS(on) - ID
RDS(on) - VGS
4 of
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 0.2 0.4 0.6 0.8 1 1.2
VDS=10V
Ta = 125℃
-40℃
25℃
85℃
0
200
400
600
800
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS = 1.5V
2.5V
4.5V
Gate-source Voltage VGS ( V )
Body Diode Forward Voltage VF ( V )
D ra
in C
u rr
e n
t ID
(
A )
Gate-source Voltage VGS ( V )
D io
d e
F o
rw a
rd C
u rr
e n
t IF
(
A )
D ra
in -s
o u
rc e
O N
-s ta
te R
e s is
ta n
c e
R
D S
( o
n )
( m
Ω )
D
ra in
-s o
u rc
e L
e a
k a
g e
C u rr
e n
t ID
S (
A )
1.E-13
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 10 20 30 40 50
Ta = 125℃
25℃
-40℃
85℃
Drain-source Voltage VDS ( V )
0
200
400
600
800
1000
0 1 2 3 4 5
Ta = 125℃ 85℃
25℃ -40℃
ID = 0.2A
D ra
in -s
o u
rc e
O N
-s ta
te R
e s is
ta n
c e
R
D S
( o
n )
( m
Ω )
Drain Current ID ( A )
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 0.1 0.2 0.3 0.4 0.5 0.6
1.5V
2.5V
VGS=4.5V
Drain-source Voltage VDS ( V )
D ra
in C
u rr
e n
t ID
(
A )
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 0.2 0.4 0.6 0.8 1
Ta = 125℃
-40℃
25℃
85℃
Doc No. TT4-EA-15081 Revision. 2
Established : 2015-10-26 Revised : 2016-07-14
Product Standards
MOS FET
FC6K3339ZL
Technical Data ( reference )
Page 5 of 6
IGS-VGS (IF-VF) IGS-VGS (IR-VR)
Safe Operating Area Rth - tsw
0.01
0.1
1
10
100
0.1 1 10 100
PW = 10μs
500μs 1ms
10ms
DC
1s
250μs
100ms
limited by RDS(on)
0.1
1
10
100
1000
0.00010.001 0.01 0.1 1 10 100 1000
Ta = 25 ℃ ,
Mounted on FR4 board (25.4mm × 25.4mm × t1.0mm)
Drain-source Voltage VDS ( V ) Pulse Width tsw ( s )
D ra
in C
u rr
e n
t ID
( A
)
T h
e rm
a l R
e s is
ta n
c e
R th
( ℃
/W )
1.E-06
1.E-05
1.E-04
1 2 3 4 5
Ta=125℃
-40℃ 25℃
85℃
G a
te -s
o u
rc e
L e
a k a
g e
C u
rr e
n t I
G S
( A
)
Gate-source Voltage VGS ( V )
1.E-05
1.E-04
1.E-03
1.E-02
0 0.2 0.4 0.6 0.8 1 1.2
Ta=125℃
-40℃
25℃ 85℃
G a
te -s
o u
rc e
L e
a k a
g e
C u
rr e
n t -
IG S
( A
)
Gate-source Voltage -VGS ( V )
Doc No. TT4-EA-15081 Revision. 2
Established : 2015-10-26 Revised : 2016-07-14
Product Standards
MOS FET
FC6K3339ZL
Unit: mm
Page 6
WSMini6-F2-B
Land Pattern (Reference) (Unit: mm)
6 of
0.13 +0.05 -0.03
1.3±0.1
2.0±0.1
(0.65) (0.65)
2. 1±
0. 1
0 to
0 .1
(0 .2
)
0. 7±
0. 1
0.20 +0.05 -0.02
1. 7±
0. 1
1 2 3
46
(5 ° )
(0 .1
5) (5°)
5
0.65 0.65
2. 0
0.45
0. 6
Top View Side View
Front View
Bottom View
Doc No. TT4-EA-15081 Revision. 2
Established : 2015-10-26 Revised : 2016-07-14
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical informat