Resistors, Zener Diode installed separate type dual N ... Build in Gate Resistor, Gate-source...

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Transcript of Resistors, Zener Diode installed separate type dual N ... Build in Gate Resistor, Gate-source...

  • Product Standards

    MOS FET

    FC6K3339ZL

    (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)

     Absolute Maximum Ratings Ta = 25℃

    Note *1 Mounted on FR4 board (25.4mm × 25.4mm × t1.0mm)

    *2 Pulse width = 10 μs, Duty cycle  1 %

    *Di1 : Body Diode contained in MOSFET structure

    Page

    FC6K3339ZL Resistors, Zener Diode installed separate type dual N-channel MOS FET

    For passive cell balancing circuits Unit : mm

     Features

    Source2

    Gate2

    Halogen-free / RoHS compliant

     Marking Symbol :6J

     Packaging

     Build in Gate Resistor, Gate-source Resistor and Zener Diode

     Drain-source ON-state Resistance : RDS(on) typ. = 200 mΩ (VGS = 4.5 V)

    2. Gate1 5.

    Gate to Source Voltage

    -55 to +150

    3. Drain2 6.

    Drain Current *1 ID 1.5 A

    Storage Temperature Range Tstg °C

    Drain Current (Pulsed) *2 IDp 15

    Parameter Symbol Rating Unit

    Drain1

    Internal Connection

     AEC-Q101 qualified

    Drain to Source Voltage VDS 30 V

    Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source1 4.

    Code

    Panasonic WSMini6-F2-B

    JEITA SC-113DA

    V+5 , -0.5VGS

    mW

    Channel Temperature Tch 150 °C

    A

    Total Power Dissipation *1 PD 700

    1 of 6

    2. 1

    2.0

    0.7

    1. 7

    0.130.2

    1.3

    (0.65)(0.65)

    1 2

    456

    3

    1 2 3

    6 5 4

    Di1

    R2

    R1 R1

    R2

    Di2

    Di2

    Di1

    Doc No. TT4-EA-15081 Revision. 2

    Established : 2015-10-26 Revised : 2016-07-14

  • Product Standards

    MOS FET

    FC6K3339ZL

     Electrical Characteristics Ta = 25 ℃ ± 3 ℃

    Body Diode Forward Voltage

    Zener Diode Forward Voltage

    Zener Diode Reverse Voltage

    Gate Resistance *3

    Gate-source Resistance *3

    Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

    *3 Assured by design.

    *4 Refer to Figure1, measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

    Page

    Drain-source Breakdown Voltage VDSS ID = 1 mA , VGS = 0 V 30

    2 of 6

    Parameter Symbol Conditions Min Typ Max Unit

    Gate to Drain Miller Charge *3 Qgd

    VDD = 15 V

    VGS = 4 V

    ID = 0.75 A Gate to Source Charge

    *3 Qgs

    QgTotal Gate Charge *3

    480

    5.0

    R2 Rgs

    Drain-source ON-state Resistance

    V

    Zero Gate Voltage Drain Current IDSS VDS = 30 V , VGS = 0 V 1 μA

    μA

    Gate-source Threshold Voltage Vth ID = 59 μA , VDS = 10 V 0.35 0.9 V

    Gate-source Leakage Current IGSS VGS = 4.5 V , VDS = 0 V 30

    200 280

    mΩRDS(on)2 ID = 0.75 A , VGS = 2.5 V 220 310

    RDS(on)3

    RDS(on)1 ID = 0.75 A , VGS = 4.5 V

    ID = 0.2 A , VGS = 1.5 V 300 900

    - 200 300 400 kΩ

    Di1 VSD ID = 0.75 A , VGS = 0 V 0.8 1.2 V

    Di2 VF IF = 100 μA 0.8 V

    VZ IZ = 1 mA V

    95.0

    10.5

    VDS = 15 V

    VGS = 0 V

    f = 1 kHz

    R1 Rg - 1.0 1.5 3.0

    VDD = 15 V

    VGS = 0 to 4 V

    ID = 0.75 A

    Output Capacitance *3

    Reverse Transfer Capacitance *3

    Turn-on Delay Time *3 *4

    Rise Time *3 *4

    Turn-off Delay Time *3 *4

    Fall Time *3 *4

    Input Capacitance *3

    Coss

    Crss

    tr

    td(on)

    td(off)

    tf

    Ciss

    0.4

    pF

    ns

    nC

    1.8

    0.3

    210

    50

    110

    17.5

    Doc No. TT4-EA-15081 Revision. 2

    Established : 2015-10-26 Revised : 2016-07-14

  • Product Standards

    MOS FET

    FC6K3339ZL

    Figure1: Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time

    Page 3 of 6

    Vout

    Vin

    Vin

    PW = 10μs

    D.C. 1 %

    D

    S

    G

    10 %

    90 %

    90 %

    10 %

    90 %

    10 %

    Vin

    Vout

    td(on) tr td(off) tf

    50 Ω

    ID = 0.75A RL= 20Ω

    VDD = 15 V

    0 V

    4 V

    R1

    50 Ω R2

    Doc No. TT4-EA-15081 Revision. 2

    Established : 2015-10-26 Revised : 2016-07-14

  • Product Standards

    MOS FET

    FC6K3339ZL

    Technical Data ( reference )

    Page 6

    IF - VF IDS - VDS

    ID - VGS

    ID - VDS RDS(on) - ID

    RDS(on) - VGS

    4 of

    1.E-05

    1.E-04

    1.E-03

    1.E-02

    1.E-01

    0 0.2 0.4 0.6 0.8 1 1.2

    VDS=10V

    Ta = 125℃

    -40℃

    25℃

    85℃

    0

    200

    400

    600

    800

    1000

    0 0.2 0.4 0.6 0.8 1 1.2 1.4

    VGS = 1.5V

    2.5V

    4.5V

    Gate-source Voltage VGS ( V )

    Body Diode Forward Voltage VF ( V )

    D ra

    in C

    u rr

    e n

    t ID

    (

    A )

    Gate-source Voltage VGS ( V )

    D io

    d e

    F o

    rw a

    rd C

    u rr

    e n

    t IF

    (

    A )

    D ra

    in -s

    o u

    rc e

    O N

    -s ta

    te R

    e s is

    ta n

    c e

    R

    D S

    ( o

    n )

    ( m

    Ω )

    D

    ra in

    -s o

    u rc

    e L

    e a

    k a

    g e

    C u rr

    e n

    t ID

    S (

    A )

    1.E-13

    1.E-12

    1.E-11

    1.E-10

    1.E-09

    1.E-08

    1.E-07

    1.E-06

    1.E-05

    1.E-04

    1.E-03

    0 10 20 30 40 50

    Ta = 125℃

    25℃

    -40℃

    85℃

    Drain-source Voltage VDS ( V )

    0

    200

    400

    600

    800

    1000

    0 1 2 3 4 5

    Ta = 125℃ 85℃

    25℃ -40℃

    ID = 0.2A

    D ra

    in -s

    o u

    rc e

    O N

    -s ta

    te R

    e s is

    ta n

    c e

    R

    D S

    ( o

    n )

    ( m

    Ω )

    Drain Current ID ( A )

    0

    0.2

    0.4

    0.6

    0.8

    1

    1.2

    1.4

    0 0.1 0.2 0.3 0.4 0.5 0.6

    1.5V

    2.5V

    VGS=4.5V

    Drain-source Voltage VDS ( V )

    D ra

    in C

    u rr

    e n

    t ID

    (

    A )

    1.E-04

    1.E-03

    1.E-02

    1.E-01

    1.E+00

    0 0.2 0.4 0.6 0.8 1

    Ta = 125℃

    -40℃

    25℃

    85℃

    Doc No. TT4-EA-15081 Revision. 2

    Established : 2015-10-26 Revised : 2016-07-14

  • Product Standards

    MOS FET

    FC6K3339ZL

    Technical Data ( reference )

    Page 5 of 6

    IGS-VGS (IF-VF) IGS-VGS (IR-VR)

    Safe Operating Area Rth - tsw

    0.01

    0.1

    1

    10

    100

    0.1 1 10 100

    PW = 10μs

    500μs 1ms

    10ms

    DC

    1s

    250μs

    100ms

    limited by RDS(on)

    0.1

    1

    10

    100

    1000

    0.00010.001 0.01 0.1 1 10 100 1000

    Ta = 25 ℃ ,

    Mounted on FR4 board (25.4mm × 25.4mm × t1.0mm)

    Drain-source Voltage VDS ( V ) Pulse Width tsw ( s )

    D ra

    in C

    u rr

    e n

    t ID

    ( A

    )

    T h

    e rm

    a l R

    e s is

    ta n

    c e

    R th

    ( ℃

    /W )

    1.E-06

    1.E-05

    1.E-04

    1 2 3 4 5

    Ta=125℃

    -40℃ 25℃

    85℃

    G a

    te -s

    o u

    rc e

    L e

    a k a

    g e

    C u

    rr e

    n t I

    G S

    ( A

    )

    Gate-source Voltage VGS ( V )

    1.E-05

    1.E-04

    1.E-03

    1.E-02

    0 0.2 0.4 0.6 0.8 1 1.2

    Ta=125℃

    -40℃

    25℃ 85℃

    G a

    te -s

    o u

    rc e

    L e

    a k a

    g e

    C u

    rr e

    n t -

    IG S

    ( A

    )

    Gate-source Voltage -VGS ( V )

    Doc No. TT4-EA-15081 Revision. 2

    Established : 2015-10-26 Revised : 2016-07-14

  • Product Standards

    MOS FET

    FC6K3339ZL

    Unit: mm

    Page 6

    WSMini6-F2-B

    Land Pattern (Reference) (Unit: mm)

    6 of

    0.13 +0.05 -0.03

    1.3±0.1

    2.0±0.1

    (0.65) (0.65)

    2. 1±

    0. 1

    0 to

    0 .1

    (0 .2

    )

    0. 7±

    0. 1

    0.20 +0.05 -0.02

    1. 7±

    0. 1

    1 2 3

    46

    (5 ° )

    (0 .1

    5) (5°)

    5

    0.65 0.65

    2. 0

    0.45

    0. 6

    Top View Side View

    Front View

    Bottom View

    Doc No. TT4-EA-15081 Revision. 2

    Established : 2015-10-26 Revised : 2016-07-14

  • Request for your special attention and precautions in using the technical information and semiconductors described in this book

    (1) If any of the products or technical informat