PW510 v60 - Admiral Microwaves · · 2010-01-26PW510 InGaP HBT Gain Block 3 December 2006 1.9GHz...

PW510InGaP HBT Gain Block

http://www.prewell.comDecember 20061

4

12

3

Features5 - 4000MHz

20.5 dB Gain at 0.9GHz

+20 dBm P1dB

+38 dBm Output IP3

Single Voltage Supply

Lead-free / Green / RoHS-

compliant SOT-89 Package

ApplicationsBroadband Gain Block

Mobile Infrastructure

Cellular, PCS, GSM, GPRS,

WCDMA, WiBro, WiMAX

W-LAN / DMB / ISM

CATV / DBS

RFID / Fixed Wireless

Functional Diagram

Function Pin No.

RF IN 1

RF OUT / Bias 3

Ground 2,4

The PW510 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The

amplifier features high linear performance, wideband operation, and high reliability. The PW510 operates from a

single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation.

The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable

plastic SOT-89 packages.

Description

Specifications

Symbol Parameters Units Freq. Min. Typ. Max.

S21 Gain dB

75 MHz900 MHz

1900 MHz2300 MHz3500 MHz

21.520.518.517.516.1

S11 Input Return Loss dB

75 MHz900 MHz

1900 MHz2300 MHz3500 MHz

-27-24-18-16-14

S22 Output Return Loss dB

75 MHz900 MHz

1900 MHz2300 MHz3500 MHz

-18-25-11-9

-10

P1dB Output Power @1dB compression dBm

75 MHz900 MHz

1900 MHz2300 MHz3500 MHz

20201918

16.5

OIP3 Output Third Order intercept dBm

75 MHz900 MHz

1900 MHz2300 MHz3500 MHz

38.538.035.033.530.5

NF Noise Figure dB

75 MHz900 MHz

1900 MHz2300 MHz3500 MHz

3.43.43.53.6

V / I Device voltage / current V/mA 5.4/85

Rth Thermal Resistance °C/W 65Test Conditions : T=25°C, Supply Voltage=+6V, Rbias=6.8ohm, 50ohm System, OIP3 measured with two tones at an output power of +3dBm/tone separated by 1MHz.



Frequency MHz 500 900 1500 1900 2300 3000

S21 dB 20.9 20.5 19.7 18.5 17.5 16.5

S11 dB -14 -24 -24 -18 -16 -16

S22 dB -14 -25 -14 -11 -9 -8

P1dB dBm 20 20 20 19 18 17

OIP3 @3dBm dBm 37.0 38.0 36.5 35.0 33.5 31.5

Noise Figure dB 3.4 3.4 3.4 3.5 3.6 4.2

Typical RF Performance for 1.9GHz Tuned Application CircuitSupply Bias Voltage = 6V, R(bias)= 6.8 ohm, Current= 85mA

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-50

-40

-30

-20

-10

0

Input Return Loss

S11(

dB)

Frequency (GHz)

+25oC -40oC +85oC

0.0 0.5 1.0 1.5 2.0 2.5 3.08

12

16

20

24

Gain vs. Frequency

Gai

n(dB

)

Frequency(GHz)

+25oC -40oC +85oC

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-30

-20

-10

0

Output Return Loss

S22(

dB)

Frequency (GHz)

+25oC -40oC +85oC

0.5 1.0 1.5 2.0 2.5 3.025

30

35

40

45

Output IP3 vs. Frequency

OIP

3(dB

m)

Frequency(GHz)

+25oC -40oC +85oC

0.5 1.0 1.5 2.0 2.5 3.05

10

15

20

25

P1dB vs. Frequency

P1dB

(dB

m)

Frequency (GHz)

+25oC -40oC +85oC

0.0 0.5 1.0 1.5 2.0 2.5 3.00

1

2

3

4

5

6

+25oC

NF vs. Frequency

NF(

dB)

Frequency (GHz)

6 8 10 12 14-70

-65

-60

-55

-50

-45

-40 IS-95, 9 Ch.Forward, 30 kHz Meas BW, +/- 885 kHz offsetACPR IS-95A vs. Channel Power

ACPR

(dB

c)

Output Channel Power(dBm)

freq=1.9GHz

-20 -16 -12 -8 -4 0 4 80

5

10

15

20

25

Output Power / Gain vs. Input Power @ 0.9GHz

Out

Put P

ower

(dB

m)/

Gai

n(dB

)

Input Power(dBm)

Gain Output Power

-20 -16 -12 -8 -4 0 4 80

5

10

15

20

25

Output Power / Gain vs. Input Power @ 1.9GHz

Out

Put P

ower

(dB

m)/

Gai

n(dB

)

Input Power(dBm)

Gain Output Power



1.9GHz Tuned Application Circuit Recommended Bias Values

Supply Voltage R bias Value Size

6 V 6.8 Ω 0805

7 V 18.6 Ω 1210

8 V 30.4 Ω 1210

9 V 42.1 Ω 2010

10 V 53.9 Ω 2010

12 V 77.4 Ω 2512RF IN RF OUT

27nH56pF

1uF

56pF 56pF

Supply Voltage

R Bias

Frequency MHz 75 125 300 500

S21 : Gain dB 21.5 21.5 21.3 21.1

S11 : Input Return Loss dB -27 -35 -30 -25

S22 : Output Return Loss dB -18 -19 -18 -15

Output P1dB dBm 20 20 20 20

Output IP3 @3dBm dBm 38.5 38.5 37.5 37.0

Noise Figure dB 3.4 3.4 3.4 3.4

Typical RF Performance for 50 - 500MHz Tuned Application CircuitSupply Bias Voltage = 6V, R(bias)= 6.8 ohm, Current= 85mA

RF IN RF OUT

820nH 10nF

1uF

10nF 10nF

Supply Voltage

R Bias

100 200 300 400 500 600

16

18

20

22

24

Gain vs. Frequency

Gai

n(dB

)

Frequency(MHz)

+25oC -40oC +85oC

100 200 300 400 500 600-50

-40

-30

-20

-10

0

Input Return Loss

S11(

dB)

Frequency(MHz)

+25oC -40oC +85oC

100 200 300 400 500 600-30

-20

-10

0

Output Return Loss

S22(

dB)

Frequency(MHz)

+25oC +85oC -40oC



18 dBmOutput P1dB

30 dBmOutput IP3 @ 3dBm

Frequency 3500MHz

S21 : Gain 16.1 dB

S11 : Input Return Loss -14 dB

S22 : Output Return Loss -10 dB

Supply Voltage 6 V

Current 85 mA

RF IN RF OUT

22nH

Supply Voltage

6.8ohm

3.9pF

1uF

Typical RF Performance for 3.5GHz Tuned Application Circuit

3.9pF 3.9pFTest Board Information : Rogers 4350B PCB (Dielectric Constant = 3.48, thick = 0.8mm(32mil))

3000 3200 3400 3600 3800 400010

12

14

16

18

20

Gain vs. Frequency

Gai

n(dB

)

Frequency(MHz)

S21

3000 3200 3400 3600 3800 4000-25

-20

-15

-10

-5

0

Return LossS1

1(dB

)/S22

(dB

)

Frequency(MHz)

S11 S22



Typical RF Performance for 45 -1000MHz CATV Application(75Ω)(1)

Frequency MHz 50 450 870

S21 : Gain dB 20.8 20.9 20.6

S11 : Input Return Loss dB -10 -15 -23

S22 : Output Return Loss dB -11 -15 -16

Output P1dB dBm 20 20 20

Output IP3(2) dBm 38 37 37Composite Second Order,

CSO(3) dBc 63 65 67

Composite Triple Beat,CTB(3) dBc 75 74 70

Cross Modulation,XMOD(3) dBc 74 71 71

Noise Figure dB 3.5 3.4 3.4

Current mA 851.Test Conditions : T=25°C, Supply Voltage=+6V, Rbias=6.8ohm,

75ohm System2. OIP3 measured with two tones at an output power of +5dBm/tone

separated by 1MHz.3. 132 channels, 50-870MHz, +18dBmV/channel flat loading

RF IN RF OUTRF Choke (5) 1uF

10nF

10nF

Supply Voltage (4)

R bias (4)

10nF

4. Supply Voltage and R bias are refer to ‘Recommended Bias Values’on page 3.

5. RF Choke is about 8.3uH. We recommend that wire of 0.2 phi radius wind 7 turns on toroidal core(size:4.0x1.5x2.0)

6. Measurement for our data sheet was made on 1.6mm thick FR-4 Board. And 75 ohm microstrip line

200 400 600 800 100019.5

20.0

20.5

21.0

21.5

22.0

Gain vs. Frequency

S21(

dB)

Frequency(MHz)

- 40oC +25oC +85oC

200 400 600 800 1000-40

-30

-20

-10

0

Input Return Loss

S11(

dB)

Frequency(MHz)

- 40oC +25oC +85oC

200 400 600 800 1000-25

-20

-15

-10

-5

0

Output Return Loss

S22(

dB)

Frequency(MHz)

- 40oC +25oC +85oC

0 100 200 300 400 500 600 700 800 900-90

-84

-78

-72

-66

-60

-54 132 channels, +18dBmV/channel flat loading

CSO/CTB/XMOD vs. Freq

dBc

Frequency(MHz)

CTB XMD CSO



Lead-free /RoHS Compliant / Green SOT-89 Package Outline

Evaluation Board Layout (4x4)

ESD / MSL Ratings

1. ESD sensitive device. Observe Handling Precautions.

2. ESD Rating : Class 2(Passes at 2000V min.) Human Body Model (HBM), JESD22-A114

3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101

4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020

Mounting Instructions

1. Use a large ground pad area with many plated through-holes as shown.

2. We recommend 1 oz copper minimum.3. Measurement for our data sheet was made on

0.8mm thick FR-4 Board.4. Add as much copper as possible to inner and outer

layers near the part to ensure optimal thermal performance.

5. RF trace width depends on the board material and construction.

6. Add mounting screws near the part to fasten the board to a heatsink.

Absolute Maximum RatingsParameter Rating Unit

Device Voltage +6 V

Device Current 170 mA

RF Power Input 10 dBm

Storage Temperature -55 to +125 °C

Ambient Operating Temperature -40 to +85 °C

Junction Temperature 160 °C

Operation of this device above any of these parameters may cause permanent damage.

PW510 v60 - Admiral Microwaves · · 2010-01-26PW510 InGaP HBT Gain Block 3 December 2006 1.9GHz...

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Transcript of PW510 v60 - Admiral Microwaves · · 2010-01-26PW510 InGaP HBT Gain Block 3 December 2006 1.9GHz...