R07DS1086EJ0200 Rev.2.00 Page 1 of 9 Jun 13, 2013

Preliminary Datasheet

RJH60M3DPQ-E0 600V - 17A - IGBT Application: Inverter

Features

• Short circuit withstand time (8 μs typ.) • Low collector to emitter saturation voltage

VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching

tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 Ω, Ta = 25°C)

Outline

1. Gate

2. Collector

3. Emitter

4. Collector

C

G

E1 2

3

4

RENESAS Package code: PRSS0003ZE-A

(Package name: TO-247)

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol Ratings Unit

Collector to emitter voltage / diode reverse voltage VCES / VR 600 V

Gate to emitter voltage VGES ±30 V

Collector current Tc = 25°C IC 35 A

Tc = 100°C IC 17 A

Collector peak current IC(peak) Note1 50 A

Collector to emitter diode forward current IDF 17 A

Collector to emitter diode forward peak current IDF(peak) Note1 50 A

Collector dissipation PCNote2 127 W

Junction to case thermal resistance (IGBT) θj-c Note2 1.25 °C/ W

Junction to case thermal resistance (Diode) θj-cd Note2 2.3 °C/ W

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

R07DS1086EJ0200Rev.2.00

Jun 13, 2013

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 2 of 9 Jun 13, 2013

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero gate voltage collector current / Diode reverse current

ICES / IR — — 5 μA VCE = 600 V, VGE = 0

Gate to emitter leak current IGES — — ±1 μA VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage VGE(off) 5 — 7 V VCE = 10 V, IC = 1 mA

Collector to emitter saturation voltage VCE(sat) — 1.8 2.3 V IC = 17 A, VGE = 15 V Note3

VCE(sat) — 2.4 — V IC = 35 A, VGE = 15 V Note3

Input capacitance Cies — 900 — pF VCE = 25 V VGE = 0 f = 1 MHz

Output capacitance Coes — 65 — pF

Reverse transfer capacitance Cres — 35 — pF

Total gate charge Qg — 60 — nC VGE = 15 V VCE = 300 V IC = 17 A

Gate to emitter charge Qge — 9 — nC

Gate to collector charge Qgc — 35 — nC

Turn-on delay time td(on) — 40 — ns VCC = 300 V VGE = 15 V IC = 17 A Rg = 5 Ω Inductive load

Rise time tr — 20 — ns

Turn-off delay time td(off) — 90 — ns

Fall time tf — 80 — ns

Turn-on energy Eon — 0.29 — mJ

Turn-off energy Eoff — 0.29 — mJ Total switching energy Etotal — 0.58 — mJ Short circuit withstand time tsc 6 8 — μs Tc = 100 °C

VCC ≤ 360 V, VGE = 15 V

FRD Forward voltage VF — 1.3 1.7 V IF = 17 A Note3

FRD reverse recovery time trr — 100 — ns IF = 17 A diF/dt = 100 A/μs FRD reverse recovery charge Qrr — 0.14 — μC

FRD peak reverse recovery current Irr — 4.1 — A

Notes: 3. Pulse test.

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 3 of 9 Jun 13, 2013

Main Characteristics

40

50

30

20

10

0

Typical Output Characteristics

40

50

30

20

10

1 2 3 4 5

Co

llector C

urrent I C

(A)

00

Collector to Emitter Voltage VCE (V)

Pulse Test

Tc = 25°C

VGE = 8 V

13 V

15 V

14 V

10 V

12 V

Typical Output Characteristics

1 2 3 4 5

Co

llector C

urrent I C

(A)

0

Collector to Emitter Voltage VCE (V)

Pulse Test

Tc = 150°C

VGE = 8 V

14 V

10 V

12 V

13 V

Co

llector C

urrent I C

(A)

Case Temperature Tc (°C)

Maximum DC Collector Current vs. Case Temperature

0 25 50 10075 125 150 1750 25 50 10075 125 150 175

Co

llector C

urrent I C

(A)

Collector to Emitter Voltage VCE (V)

Turn-off SOA

0 200 400 600 800

Co

llector

Dis

sipation

Pc (W)

Case Temperature Tc (°C)

Collector Dissipation vs. Case Temperature

160

120

80

40

0

40

30

20

10

0

0

80

60

40

20

15 V

Co

llector C

urrent I C

(A)

Collector to Emitter Voltage VCE (V)

Maximum Safe Operation Area

0.01

100

1

10

0.1

1 10010 1000

Tc = 25°C

Single pulse

100 µs

PW = 10 µs

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 4 of 9 Jun 13, 2013

10

8

6

4

2

0

50

40

30

20

10

0

Typical Transfer Characteristics

Col

lect

or C

urre

nt

I C (

A)

0 4 8 12 16

VCE = 10 VPulse Test

Gate to Emitter Voltage VGE (V)

25°C

Tc = 150°C

Collector to Emitter Saturation Voltagevs. Junction Temparature (Typical)

−25 0 25 75 12550 100 150

Col

lect

or to

Em

itter

Sat

urat

ion

Volta

ge

V

CE

(sat

) (V

)

Case Temparature Tc (°C)

17 A

3 A

IC = 35 A

0

1

2

4

3

VGE = 15 VPulse Test

Collector to Emitter Saturation Voltagevs. Gate to Emitter Voltage (Typical)

Col

lect

or to

Em

itter

Sat

urat

ion

Volta

ge

V

CE

(sat

) (V

)

Gate to Emitter Voltage VGE (V)

Collector to Emitter Saturation Voltagevs. Gate to Emitter Voltage (Typical)

Col

lect

or to

Em

itter

Sat

urat

ion

Volta

ge

V

CE

(sat

) (V

)

Gate to Emitter Voltage VGE (V)

Gate to Emitter Cutoff Voltagevs. Junction Temparature (Typical)

−25 0 25 75 12550 100 150

Gat

e to

Em

itter

Cut

off V

olta

ge

VG

E(o

ff) (

V)

VCE = 10 VPulse Test

Junction Temparature Tj (°C)

1 mA

IC = 10 mA

16

12

8

4

0

Frequency Characteristics (Typical)

Col

lect

or C

urre

nt

I C(R

MS

) (A

)

Frequency f (kHz)

1 10010 1000

0Collector current wave

(Square wave)

1

3

2

4

5

8 10 12 181614 20 8 10 12 181614 20

IC = 35 A

17 A

IC = 35 A

17 A

Tc = 25°CPulse Test

1

3

2

4

5Tc = 150°CPulse Test

Tj = 125°CTc = 90°CVCE = 400 VVGE = 15 VRg = 5 Ωduty = 50%

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 5 of 9 Jun 13, 2013

10 100

100

1000

1

10

1

td(on)

tr

tftd(off)

0.1

1

10

1 10 100

1 10 100

Gate Registance Rg (Ω)(Inductive load)

Eoff

Eon

Sw

ithin

g E

nerg

y Lo

sses

E

(m

J)

Switching Characteristics (Typical) (4)

VCC = 300 V, VGE = 15 VIC = 17 A, Tc = 150°C

0.1

1

10

Eoff

Eon

VCC = 300 V, VGE = 15 VRg = 5 Ω, Tc = 150°C

Sw

ithin

g E

nerg

y Lo

sses

E

(m

J)

Collector Current IC (A)(Inductive load)

Switching Characteristics (Typical) (2)Switching Characteristics (Typical) (1)

Collector Current IC (A)(Inductive load)

Sw

itchi

ng T

imes

t

(ns)

VCC = 300 V, VGE = 15 VRg = 5 Ω, Tc = 150°C

1 10 100

Switching Characteristics (Typical) (3)

td(on)

Gate Resistance Rg (Ω)(Inductive load)

Sw

itchi

ng T

ime

t (

ns)

10

100

1000VCC = 300 V, VGE = 15 VIC = 17 A, Tc = 150°C

tftd(off)

tr

10

100

1000

5025 15075 125100

Switching Characteristics (Typical) (5)

td(on)

Channel Temperature Tc (°C)(Inductive load)

Sw

itchi

ng T

imes

t

(ns)

VCC = 300 V, VGE = 15 VIC = 17 A, Rg = 5 Ω

tf

td(off)

tr

0.1

1

10

5025 15075 125100

Channel Temperature Tc (°C)(Inductive load)

Switching Characteristics (Typical) (6)

Eoff

Eon

Sw

ithin

g E

nerg

y Lo

sses

E

(m

J) VCC = 300 V, VGE = 15 VIC = 17 A, Rg = 5 Ω

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 6 of 9 Jun 13, 2013

0 10 3020 7040 6050

20

10

50

40

30

0

Gate Charge Qg (nC)

Diode Current Slope di/dt (A/μs)

Dynamic Input Characteristics (Typical)

800

600

400

200

0

16

12

8

4

0

VCC = 300 VIC = 17 ATc = 25°C

VGE

VCE

Col

lect

or to

Em

itter

Vol

tage

V

CE (

V)

Rev

erse

Rec

over

y Ti

me

trr (

ns)

Gat

e to

Em

itter

Vol

tage

V

GE (

V)

Cap

acita

nce

C (

pF)

Typical Capacitance vs.Collector to Emitter Voltage

Reverse Recovery Time vs.Diode Current Slope (Typical)

Collector to Emitter Voltage VCE (V)

80

40

200

160

120

00 40 80 200120 160 0 40 80 200120 160

VCC = 300 VIF = 17 A

Tc = 150°C

25°C

Diode Current Slope di/dt (A/μs)

Rev

erse

Rec

over

y C

urre

nt

I rr (

A)

Reverse Recovery Current vs.Diode Current Slope (Typical)

Diode Current Slope di/dt (A/μs)

Rev

erse

Rec

over

y C

harg

e Q

rr (μC

)

Reverse Recovery Charge vs.Diode Current Slope (Typical)

0.2

0.1

0.5

0.4

0.3

0

VCC = 300 VIF = 17 A

Tc = 150°C

25°C

8

4

16

12

00 40 80 200120 160

VCC = 300 VIF = 17 A

Tc = 150°C

25°C

25°C

C-E Diode Forward Voltage VCEF (V)

Forward Current vs. Forward Voltage (Typical)

Forw

ard

Cur

rent

I F

(A

)

0 0.4 0.8 1.2 1.6 2.0 2.4

VGE = 0 VPulse Test

Tc = 150°C

1

10

100

1000

1000

0 10050 150 200 250 300

Cies

Coes

CresVGE = 0 Vf = 1 MHzTc = 25°C

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 7 of 9 Jun 13, 2013

0.01

1

0.1

10

100 μ 1 m 10 m 100 m 1 10

PDM

PW

T

D =PW

T

θj – c(t) = γs (t) • θj – c

θj – c = 2.3°C/W, Tc = 25°C

0.2

0.1

0.5

D = 1

Tc = 25°C

100

0.020.05

1 shot pulse0.01

0.01

1

0.1

10

100 μ 1 m 10 m 100 m 1 10

PDM

PW

T

D =PW

T

θj – c(t) = γs (t) • θj – c

θj – c = 1.25°C/W, Tc = 25°C

0.2

0.1

0.5

D = 1

Tc = 25°C

100

0.020.05

1 shot pulse

Pulse Width PW (s)

No

rma

lize

d T

ran

sie

nt

Th

erm

al Im

pe

da

nce

γ

s (t

) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)

Pulse Width PW (s)

No

rma

lize

d T

ran

sie

nt

Th

erm

al Im

pe

da

nce

γ

s (t

)

Normalized Transient Thermal Impedance vs. Pulse Width (Diode)

0.01

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 8 of 9 Jun 13, 2013

Switching Time Test Circuit

Diode Reverse Recovery Time Test Circuit

Waveform

Waveform

Diode clamp

D.U.T

D.U.T

Rg

L

VCC

VCC

trr

Irr

diF/dt

0.9 Irr

IF

IF

Rg

td(off) td(on)tf tr

90%

90% 90%

10%

10%10%

VGE

IC

0.5 Irr

L

0

RJH60M3DPQ-E0 Preliminary

R07DS1086EJ0200 Rev.2.00 Page 9 of 9 Jun 13, 2013

Package Dimension

15.94 ± 0.19

5.45

6.1

5

21

.13

± 0

.33

20

.19

± 0

.38

4.5

ma

x

φ3.60 ± 0.1

2.10

1.27 ± 0.13

5.45 2.410.71 ± 0.1

5.02 ± 0.19

Unit: mm⎯ 6.0g

MASS[Typ.]

⎯PRSS0003ZE-A

RENESAS CodeJEITA Package Code Previous CodePackage Name

TO-247

17

.63

13.26

+ 0.1– 0.2

Ordering Information

Orderable Part No. Quantity Shipping Container

RJH60M3DPQ-E0#T2 450 pcs Tube

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