Vishay SiliconixSi3457CDV

Document Number: 68602S09-0131-Rev. B, 02-Feb-09

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New Product

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21

Available • TrenchFET® Power MOSFET

APPLICATIONS • Load Switch

PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)

- 300.074 at VGS = - 10 V - 5.1

5.1 nC0.113 at VGS = - 4.5 V - 4.1

(4) S

(3) G

(1, 2, 5, 6) D

TSOP-6Top View

6

4

1

2

3

5

Ordering Information: Si3457CDV-T1-E3 (Lead (Pb)-free)Si3457CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET

3 mm

2.85 mm

Marking Code

AT XXXLot Traceabilityand Date Code

Part # Code

Notes:a. Based on TC = 25 °C.b. Surface Mounted on 1" x 1" FR4 board.c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol Limit Unit Drain-Source Voltage VDS - 30

VGate-Source Voltage VGS ± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 5.1

A

TC = 70 °C - 4.1TA = 25 °C - 4.1b, c

TA = 70 °C - 3.3b, c

Pulsed Drain Current IDM - 20

Continuous Source-Drain Diode Current TC = 25 °C

IS- 2.5

TA = 25 °C - 1.67b, c

Maximum Power Dissipation

TC = 25 °C

PD

3.0

WTC = 70 °C 2.0TA = 25 °C 2.0b, c

TA = 70 °C 1.3b, c

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 55 62.5°C/W

Maximum Junction-to-Foot (Drain) Steady State RthJF 34 41

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Document Number: 68602S09-0131-Rev. B, 02-Feb-09

Vishay SiliconixSi3457CDV

New Product

Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V

VDS Temperature Coefficient ΔVDS/TJID = - 250 µA

- 31mV/°C

VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V

Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA

Zero Gate Voltage Drain Current IDSSVDS = - 30 V, VGS = 0 V - 1

µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10

On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A

Drain-Source On-State Resistancea RDS(on)VGS = - 10 V, ID = - 4.1 A 0.060 0.074

ΩVGS = - 4.5 V, ID = - 1.0 A 0.092 0.113

Forward Transconductancea gfs VDS = - 15 V, ID = - 4.1 A 8 S

Dynamicb

Input Capacitance Ciss

VDS = - 15 V, VGS = 0 V, f = 1 MHz

450

pFOutput Capacitance Coss 80

Reverse Transfer Capacitance Crss 63

Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A 10 15

nCVDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A

5.1 8

Gate-Source Charge Qgs 1.8

Gate-Drain Charge Qgd 2.5

Gate Resistance Rg f = 1 MHz 7 Ω

Turn-On Delay Time td(on)

VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω

40 60

ns

Rise Time tr 80 120

Turn-Off Delay Time td(off) 20 30

Fall Time tf 12 20

Turn-On Delay Time td(on)

VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω

5 10

Rise Time tr 13 20

Turn-Off Delay Time td(off) 20 30

Fall Time tf 10 15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS TC = 25 °C - 2.5A

Pulse Diode Forward Currenta ISM - 20

Body Diode Voltage VSD IS = - 3.3 A - 0.8 - 1.2 V

Body Diode Reverse Recovery Time trr

IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C

20 30 ns

Body Diode Reverse Recovery Charge Qrr 20 30 nC

Reverse Recovery Fall Time ta 14ns

Reverse Recovery Rise Time tb 6

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Document Number: 68602S09-0131-Rev. B, 02-Feb-09

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Vishay SiliconixSi3457CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

4

8

12

16

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V)

I D -

Dra

in C

urre

nt (

A)

VGS = 10 thru 5 V

VGS = 3 V

VGS = 4 V

VGS = 2 V

0.00

0.04

0.08

0.12

0.16

0.20

0 4 8 12 16 20

- O

n-R

esis

tanc

e (Ω

)R

DS

(on)

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0 2 4 6 8 10 12

ID = 4.1 A

- G

ate-

to-S

ourc

e V

olta

ge (

V)

Qg - Total Gate Charge (nC)

VG

S

VDS = 24 V

VDS = 15 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

0 1 2 3 4

VGS - Gate-to-Source Voltage (V)

I D -

Dra

in C

urre

nt (

A)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

0

200

400

600

800

0 5 10 15 20 25 30

Ciss

VDS - Drain-to-Source Voltage (V)

C -

Cap

acita

nce

(pF

)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

(Nor

mal

ized

)-

On-

Res

ista

nce

RD

S(o

n)

VGS = 10 V, ID = 4.1 V

VGS = 4.5 V, ID = 4.1 A

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Document Number: 68602S09-0131-Rev. B, 02-Feb-09

Vishay SiliconixSi3457CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ = 150 °C

10

VSD - Source-to-Drain Voltage (V)

I S -

Sou

rce

Cur

rent

(A

)

1

100

TJ = 25 °C

1.2

1.4

1.6

1.8

2.0

2.2

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

V

(V

)G

S(t

h)

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.05

0.10

0.15

0.20

0.25

0 2 4 6 8 10

- O

n-R

esis

tanc

e (Ω

)R

DS

(on)

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = 4.1 A

0

5

10

15

20

25P

ower

(W)

Time (s)

10 10000.10.010.001 1001

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

* VGS minimum VGS at which RDS(on) is specified

100

1

0.1 1 10 1000.01

10

I D -

Dra

in C

urre

nt (

A)

0.1

TA = 25 °CSingle Pulse

1 ms

10 ms

Limited by RDS(on)*

BVDSSLimited

100 µs

100 ms

DC

1s, 10 s

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Document Number: 68602S09-0131-Rev. B, 02-Feb-09

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Vishay SiliconixSi3457CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

Current Derating*

0

1

2

3

4

5

0 25 50 75 100 125 150

TC - Case Temperature (°C)

6

I D -

Dra

in C

urre

nt (

A)

Power, Junction-to-Foot

0

1

2

3

4

25 50 75 100 125 150

TC - Case Temperature (°C)

Pow

er (

W)

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Document Number: 68602S09-0131-Rev. B, 02-Feb-09

Vishay SiliconixSi3457CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?68602.

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3 10-2 1 10 100010-110-4 100

0.2

0.1

0.05

Square Wave Pulse Duration (s)

Nor

mal

ized

Effe

ctiv

eTr

ansi

ent

The

rmal

Impe

danc

e

1

0.1

0.01

t1t2

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 90 °C/W

3. TJM - TA = PDMZthJA(t)

t1t2

4. Surface Mounted

Duty Cycle = 0.5

0.02

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Foot

10-3 10-2 01110-110-4

0.2

0.1

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Nor

mal

ized

Effe

ctiv

eTr

ansi

ent

The

rmal

Impe

danc

e

1

0.1

0.01

Single Pulse

0.02

0.05

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Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

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All product specifications and data are subject to change without notice.

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