This is information on a product in full production.

March 2014 DocID023939 Rev 4 1/14

14

STF13N60M2, STFI13N60M2

N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg

Power MOSFETs in TO-220FP and I2PAKFP packages

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower RDS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

DescriptionThese devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

TO-220FPI2PAKFP

1

2

3

12

3

(TO-281)

Order codes VDS @ TJmax RDS(on) max ID

STF13N60M2

650 V 0.38 Ω 11 A

STFI13N60M2

Table 1. Device summary

Order codes Marking Package Packaging

STF13N60M2

13N60M2

TO-220FP

Tube

STFI13N60M2 I2PAKFP (TO-281)

www.st.com

Contents STF13N60M2, STFI13N60M2

2/14 DocID023939 Rev 4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

DocID023939 Rev 4 3/14

STF13N60M2, STFI13N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS

Gate-source voltage ± 25 V

ID

Drain current (continuous) at TC

= 25 °C 11 (1)

1. Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC

= 100 °C 7 (1)

A

IDM

(2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 44 (1)

A

PTOT

Total dissipation at TC

= 25 °C 25 W

dv/dt (3)

3. ISD

≤ 11 A, di/dt ≤ 400 A/μs; VDS

peak

< V(BR)DSS

, VDD

=400 V.

Peak diode recovery voltage slope 15 V/ns

dv/dt(4)

4. VDS

≤ 480 V

MOSFET dv/dt ruggedness 50 V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500 V

Tstg

Storage temperature

- 55 to 150 °C

Tj

Max. operating junction temperature

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case

Thermal resistance junction-case max 5 °C/W

Rthj-amb

Thermal resistance junction-ambient max 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetetive or not

repetetive (pulse width limited by Tjmax

)

2.8 A

EAS

Single pulse avalanche energy (starting

Tj=25°C, I

D= I

AR; V

DD=50)

125 mJ

Electrical characteristics STF13N60M2, STFI13N60M2

4/14 DocID023939 Rev 4

2 Electrical characteristics

(TC

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID

= 1 mA, VGS

= 0 600 V

IDSS

Zero gate voltage

drain current (VGS

= 0)

VDS

= 600 V

VDS

= 600 V, TC

=125 °C

1

100

μA

μA

IGSS

Gate-body leakage

current (VDS

= 0)

VGS

= ± 25 V ±10 μA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 2 3 4 V

RDS(on)

Static drain-source

on-resistance

VGS

= 10 V, ID

= 5.5 A 0.35 0.38 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Input capacitance

VDS

= 100 V, f = 1 MHz,

VGS

= 0

- 580 - pF

Coss

Output capacitance - 32 - pF

Crss

Reverse transfer

capacitance

- 1.1 - pF

Coss eq.

(1)

1. Coss eq.

is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS

= 0 to 480 V, VGS

= 0 - 120 - pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain - 6.6 - Ω

Qg

Total gate charge

VDD

= 480 V, ID

= 11 A,

VGS

= 10 V (see Figure 15)

- 17 - nC

Qgs

Gate-source charge - 2.5 - nC

Qgd

Gate-drain charge - 9 - nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

Turn-on delay time

VDD

= 300 V, ID

= 5.5 A,

RG

= 4.7 Ω, VGS

= 10 V

(see Figure 14 and 19)

- 11 - ns

tr

Rise time - 10 - ns

td(off)

Turn-off delay time - 41 - ns

tf

Fall time - 9.5 - ns

DocID023939 Rev 4 5/14

STF13N60M2, STFI13N60M2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

Source-drain current - 11 A

ISDM

(1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 44 A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 11 A, VGS

= 0 - 1.6 V

trr

Reverse recovery time

ISD

= 11 A, di/dt = 100 A/μs

VDD

= 60 V (see Figure 16)

- 297 ns

Qrr

Reverse recovery charge - 2.8 μC

IRRM

Reverse recovery current - 18.5 A

trr

Reverse recovery timeISD

= 11 A, di/dt = 100 A/μs

VDD

= 60 V, Tj=150 °C

(see Figure 16)

- 394 ns

Qrr

Reverse recovery charge - 3.8 μC

IRRM

Reverse recovery current - 19 A

Electrical characteristics STF13N60M2, STFI13N60M2

6/14 DocID023939 Rev 4

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

ID

1

0.1

0.1 1 100 VDS(V)10

(A)

Operat

ion in

this

area i

s

Limite

d by m

ax R

DS(on)

10ms1ms

0.01

Tj=150°CTc=25°CSingle pulse

100 µS

10µs

10

AM15735v1

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized V(BR)DSS vs temperature Figure 7. Static drain-source on-resistance

ID

12

8

4

00 8 VDS(V)

(A)

4 12

16

4V

5V

6V

VGS=7, 8, 9, 10V

16

20

AM15712v1ID

4

00 4 VGS(V)8

(A)

2 6

8

12

VDS=18V

16

20

AM15713v1

V(BR)DSS

-50 TJ(°C)

(norm)

00.9

0.94

0.98

1.02

1.06

ID=1 mA

50 100

1.1

AM15714v1RDS(on)

0.360

0.350

0.340

0.3300 4 ID(A)

(Ω)

2 6

0.370

8 10

VGS=10V

AM15715v1

DocID023939 Rev 4 7/14

STF13N60M2, STFI13N60M2 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Source-drain diode forward characteristics

Figure 13. Output capacitance stored energy

VGS

6

4

2

00 Qg(nC)

(V)

8

8

4

10VDD=480V

300

200

100

0

400

VDS

12 16

500

VDS(V)

ID=11A

AM15716v1 C

10

1

0.10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

100

1000

AM15717v1

VGS(th)

0.9

0.8

0.7

0.6TJ(°C)

(norm)

-50

1.0

ID=250µA

0 50 100

1.1

AM15718v1 RDS(on)

2.1

1.7

1.3

0.9

TJ(°C)

(norm)

0.5-50 0 50 100

ID=5.5 AVGS=10V

AM15719v1

VSD

0 4 ISD(A)

(V)

2 106 80.5

0.6

0.7

0.8

TJ=-50°C

TJ=150°C

TJ=25°C0.9

1

AM15720v1Eoss

0 VDS(V)

(µJ)

200100 5000

1

2

3

4

300 400

AM15721v1

Test circuits STF13N60M2, STFI13N60M2

8/14 DocID023939 Rev 4

3 Test circuits

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID023939 Rev 4 9/14

STF13N60M2, STFI13N60M2 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

Package mechanical data STF13N60M2, STFI13N60M2

10/14 DocID023939 Rev 4

Figure 20. TO-220FP drawing

7012510_Rev_K_B

DocID023939 Rev 4 11/14

STF13N60M2, STFI13N60M2 Package mechanical data

Table 9. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Package mechanical data STF13N60M2, STFI13N60M2

12/14 DocID023939 Rev 4

Figure 21. I2PAKFP (TO-281) drawing

Table 10. I2PAKFP (TO-281) mechanical data

Dim.mm

Min. Typ. Max.

A 4.40

-

4.60

B 2.50 2.70

D 2.50 2.75

D1 0.65 0.85

E 0.45 0.70

F 0.75 1.00

F1 1.20

G 4.95 5.20

H 10.00 10.40

L1 21.00 23.00

L2 13.20 14.10

L3 10.55 10.85

L4 2.70 3.20

L5 0.85 1.25

L6 7.30 7.50

DocID023939 Rev 4 13/14

STF13N60M2, STFI13N60M2 Revision history

5 Revision history

Table 11. Document revision history

Date Revision Changes

18-Dec-2012 1 First release.

17-Apr-2013 2

– Added: note 4 on Table 2– Modified: I

D value on Table 2, I

AR, I

AS on Table 4, R

DS(on) on

Table 5– Updated: typical values for Table 6, 7 and 8– Modified: Figure 1

21-Jun-2013 3

– Document status promoted from preliminary data to production

data

– Minor text changes

03-Mar-2014 4

– Modified: Figure 11– Minor text changes

STF13N60M2, STFI13N60M2

14/14 DocID023939 Rev 4

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