N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg ...€¦ · This is information on a...

This is information on a product in full production.

April 2014 DocID024026 Rev 6 1/18

18

STF24N60M2, STFI24N60M2, STFW24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg

Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower RDS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications• Switching applications

• LLC converters, resonant converters

DescriptionThese devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

D(2)

G(1)

S(3)AM01476v1

TO-220FPI2PAKFP

12

3

1 2 3

(TO-281)

111

123

TO-3PF

Order codes VDS @ TJmax RDS(on) max ID

STF24N60M2

650 V 0.19 Ω 18 ASTFI24N60M2

STFW24N60M2

Table 1. Device summary

Order codes Marking Package Packaging

STF24N60M2

24N60M2

TO-220FP

TubeSTFI24N60M2 I2PAKFP (TO-281)

STFW24N60M2 TO-3PF

www.st.com

http://www.st.com

Contents STF24N60M2, STFI24N60M2, STFW24N60M2

2/18 DocID024026 Rev 6

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1 TO-220FP, STF24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

4.2 I2PAKFP, STFI24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.3 TO-3PF, STFW24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

DocID024026 Rev 6 3/18

STF24N60M2, STFI24N60M2, STFW24N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

Value

UnitTO-220FP, I2PAKFP

TO-3PF

VGS

Gate-source voltage ± 25 V

ID

Drain current (continuous) at TC

= 25 °C 18 (1)

1. Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC

= 100 °C 12 (1)

A

IDM

(2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 72 (1)

A

PTOT

Total dissipation at TC

= 25 °C 30 48 W

dv/dt (3)

3. ISD

≤ 18 A, di/dt ≤ 400 A/μs; VDS

peak

< V(BR)DSS

, VDD

= 400 V.

Peak diode recovery voltage slope 15 V/ns

dv/dt(4)

4. VDS

≤ 480 V

MOSFET dv/dt ruggedness 50 V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

2500 3500 V

Tstg

Storage temperature

- 55 to 150 °C

Tj

Max. operating junction temperature

Table 3. Thermal data

Symbol Parameter

Value

UnitTO-220FP, I2PAKFP

TO-3PF

Rthj-case

Thermal resistance junction-case max 4.2 2.6 °C/W

Rthj-amb

Thermal resistance junction-ambient max 62.5 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax

)

3.5 A

EAS

Single pulse avalanche energy (starting Tj=25°C, I

D= I

AR;

VDD

=50)

180 mJ

Electrical characteristics STF24N60M2, STFI24N60M2, STFW24N60M2

4/18 DocID024026 Rev 6

2 Electrical characteristics

(TC

= 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS

= 0, ID

= 1 mA 600 V

IDSS

Zero gate voltage

drain current

VGS

= 0, VDS

= 600 V 1 μA

VGS

= 0,

VDS

= 600 V, TC

=125 °C

100 μA

IGSS

Gate-body leakage

current

VDS

= 0, VGS

= ± 25 V ±10 μA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 2 3 4 V

RDS(on)

Static drain-source on-

resistance

VGS

= 10 V, ID

= 9 A 0.168 0.19 Ω

Table 6. Dynamic


Ciss

Input capacitance

VDS

= 100 V, f = 1 MHz,

VGS

= 0

- 1060 - pF

Coss Output capacitance - 55 - pF

Crss

Reverse transfer

capacitance- 2.2 - pF

Coss eq.

(1)

1. Coss eq.

is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS

= 0 to 480 V, VGS

= 0 - 258 - pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID

=0 - 7 - Ω

Qg

Total gate chargeV

DD = 480 V, I

D = 18 A,

VGS

= 10 V

(see Figure 16)

- 29 - nC

Qgs

Gate-source charge - 6 - nC

Qgd

Gate-drain charge - 12 - nC

DocID024026 Rev 6 5/18

STF24N60M2, STFI24N60M2, STFW24N60M2 Electrical characteristics

Table 7. Switching times


td(on)

Turn-on delay time

VDD

= 300 V, ID

= 9 A,

RG

= 4.7 Ω, VGS

= 10 V

(see Figure 16 and 21)

- 14 - ns

tr

Rise time - 9 - ns

td(off)

Turn-off delay time - 60 - ns

tf

Fall time - 15 - ns

Table 8. Source drain diode


ISD

(1)

1. The value is rated according to Rthj-case

and limited by package.

Source-drain current - 18 A

ISDM

(1),(2)

2. Pulse width limited by safe operating area

Source-drain current (pulsed) - 72 A

VSD

(3)

3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 18 A, VGS

= 0 - 1.6 V

trr

Reverse recovery time

ISD

= 18 A, di/dt = 100 A/μs

VDD

= 60 V (see Figure 18)

- 332 ns

Qrr

Reverse recovery charge - 4 μC

IRRM

Reverse recovery current - 24 A

trr

Reverse recovery timeISD

= 18 A, di/dt = 100 A/μs

VDD

= 60 V, Tj = 150 °C

(see Figure 18)

- 450 ns

Qrr

Reverse recovery charge - 5.5 μC

IRRM

Reverse recovery current - 25 A


6/18 DocID024026 Rev 6

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP and I2PAKFP

Figure 3. Thermal impedance for TO-220FP and I2PAKFP

ID

1

0.1

0.010.1 1 100 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max RDS(o

n)

10µs

100µs

1ms

10msTj=150°CTc=25°C

Singlepulse

10

AM15462v1

Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF

Figure 6. Output characteristics Figure 7. Transfer characteristics

ID

1

0.1

0.010.1 1 100 VDS(V)10

(A)

Operation in

this a

rea is

Limite

d by max R

DS(on) 10µs

100µs

1ms

10msTj=150°CTc=25°CSinglepulse

10

100

GIPG030420141648SA

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

K

10 tp(s)-5 10-410-3

10-2

10-3 10-2 10-1

c

10-1

100

GIPG030420141703SA

ID

30

20

10

00 10 VDS(V)

(A)

5 15

40

VGS= 4 V

VGS= 5 V

VGS= 7 V

VGS= 8, 9, 10 V

5

15

25

35

VGS= 6 V

20

AM15470v1ID

15

10

5

00 4 VGS(V)8

(A)

2 6 10

20

VDS= 17 V

25

30

35

40

AM15469v1

DocID024026 Rev 6 7/18

STF24N60M2, STFI24N60M2, STFW24N60M2 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs temperature

Figure 13. Normalized on-resistance vs temperature

VGS

6

4

2

00 5 Qg(nC)

(V)

20

8

10 15

10

VDD=480 V

ID=18 A

25

300

200

100

0

400

500

VDS

(V)VDS12

30

600

AM15471v1 RDS(on)

0.172

0.168

0.164

0.1600 8 ID(A)

(Ω)

4 12

0.176

VGS=10V

16

AM15465v1

C

1000

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

AM15665v1 Eoss

2

1

00 100 VDS(V)

(µJ)

400

3

200 300

4

5

500 600

6

7

8

AM15472v1

VGS(th)

0.9

0.8

0.7

0.6-50 0 TJ(°C)

(norm)

-25

1.0

7525 50 100

ID = 250 µA1.1

AM15473v1 RDS(on)

1.7

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

0.7

1.1

1.5

1.9

2.1ID = 9 A2.3

VGS = 10 V

AM15464v1


8/18 DocID024026 Rev 6

Figure 14. Source-drain diode forward characteristics

Figure 15. Normalized V(BR)DSS vs temperature

VSD

0 4 ISD(A)

(V)

2 106 80

0.2

0.4

0.6

0.8

1

1.2 TJ=-50°C

TJ=150°CTJ=25°C

12 14 16

1.4

AM15468v1 V(BR)DSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.93

0.95

0.97

0.99

1.01

1.05

1.07

1.03

ID = 1mA1.09

1.11

AM15466v1

DocID024026 Rev 6 9/18

STF24N60M2, STFI24N60M2, STFW24N60M2 Test circuits

3 Test circuits

Figure 16. Switching times test circuit for resistive load

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load switching and diode recovery times

Figure 19. Unclamped inductive load test circuit

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Package mechanical data STF24N60M2, STFI24N60M2, STFW24N60M2

10/18 DocID024026 Rev 6

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

http://www.st.com

DocID024026 Rev 6 11/18

STF24N60M2, STFI24N60M2, STFW24N60M2 Package mechanical data

4.1 TO-220FP, STF24N60M2

Figure 22. TO-220FP drawing

7012510_Rev_K_B


12/18 DocID024026 Rev 6

Table 9. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

DocID024026 Rev 6 13/18


4.2 I2PAKFP, STFI24N60M2

Figure 23. I2PAKFP (TO-281) drawing


14/18 DocID024026 Rev 6

Table 10. I2PAKFP (TO-281) mechanical data

Dim.mm

Min. Typ. Max.

A 4.40

-

4.60

B 2.50 2.70

D 2.50 2.75

D1 0.65 0.85

E 0.45 0.70

F 0.75 1.00

F1 1.20

G 4.95 5.20

H 10.00 10.40

L1 21.00 23.00

L2 13.20 14.10

L3 10.55 10.85

L4 2.70 3.20

L5 0.85 1.25

L6 7.30 7.50

DocID024026 Rev 6 15/18


4.3 TO-3PF, STFW24N60M2

Figure 24. TO-3PF drawing

7627132_D


16/18 DocID024026 Rev 6

Table 11. TO-3PF mechanical data

Dim.mm

Min. Typ. Max.

A 5.30 5.70

C 2.80 3.20

D 3.10 3.50

D1 1.80 2.20

E 0.80 1.10

F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L 9.80 10 10.20

L2 22.80 23.20

L3 26.30 26.70

L4 43.20 44.40

L5 4.30 4.70

L6 24.30 24.70

L7 14.60 15

N 1.80 2.20

R 3.80 4.20

Dia 3.40 3.80

DocID024026 Rev 6 17/18

STF24N60M2, STFI24N60M2, STFW24N60M2 Revision history

5 Revision history

Table 12. Document revision history

Date Revision Changes

10-Dec-2012 1 First release.

20-Dec-2012 2

Added MOSFET dv/dt ruggedness in Table 2: Absolute maximum ratings.

14-Jan-2013 3 Modified: Figure 16, 17

28-May-2013 4

– Modified: Figure 16, 17, 18 and 19– Minor text changes

28-Feb-2014 5

– Modified: Rthj-case

value in Table 3– Modified: Figure 12– Minor text changes

07-Apr-2014 6

– Added: TO-3PF package

– Added: Section 4.3: TO-3PF, STFW24N60M2

– Minor text changes

STF24N60M2, STFI24N60M2, STFW24N60M2

18/18 DocID024026 Rev 6

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N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg ...€¦ · This is information on a...

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