January 2011 Doc ID 18432 Rev 1 1/15

15

STD96N3LLH6N-channel 30 V, 0.0037 Ω, 80 A, DPAK

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)■ High avalanche ruggedness

■ Low gate drive power losses

Application■ Switching applications

– Automotive

DescriptionThis product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1. Internal schematic diagram

Type VDSS RDS(on) max ID

STD96N3LLH6 30 V 0.0042 Ω 80 A

DPAK

1

3

AM01474v1

D (TAB or 2)

G(1)

S(3)

Table 1. Device summary

Order codes Marking Package Packaging

STD96N3LLH6 96N3LLH6 DPAK Tape and reel

www.st.com

http://www.st.com

Contents STD96N3LLH6

2/15 Doc ID 18432 Rev 1

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

STD96N3LLH6 Electrical ratings

Doc ID 18432 Rev 1 3/15

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 30 V

VGS Gate-source voltage ± 20 V

ID (1)

1. Limited by wire bonding.

Drain current (continuous) at TC = 25 °C 80 A

ID Drain current (continuous) at TC = 100 °C 61 A

IDM (2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 320 A

PTOT Total dissipation at TC = 25 °C 70 W

Derating factor 0.47 W/°C

EAS (3)

3. Starting Tj = 25°C, IAV = 55 A, L = 0.1 mH

Single pulse avalanche energy 150 mJ

Tstg Storage temperature -55 to 175 °C

Tj Max. operating junction temperature 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 2.14 °C/W

Rthj-amb Thermal resistance junction-ambient max 100 °C/W

Rthj-pcb(1)

1. When mounted on FR-4 board of 1 inch2, 2 oz Cu.

Thermal resistance junction-pcb max 35 °C/W

Tl Maximum lead temperature for soldering purpose 275 °C

Electrical characteristics STD96N3LLH6

4/15 Doc ID 18432 Rev 1

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown Voltage

ID = 250 µA, VGS= 0 30 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 30 V

VDS = 30 V, Tc = 125 °C

1

10

µA

µA

IGSSGate body leakage current

(VDS = 0)VGS = ± 20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V

RDS(on)Static drain-source on resistance

VGS = 10 V, ID = 40 A 0.0037 0.0042 Ω

VGS = 5.5 V, ID = 40 A 0.0055 0.007 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit

CissCossCrss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f=1 MHz,

VGS = 0-

2200

400280

-

pF

pFpF

QgQgsQgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 80 A

VGS = 4.5 V

Figure 13-

20

8.2

7.5

-

nC

nC

nC

Qgs1

Qgs2

Pre Vth gate-to-source charge

Post Vth gate-to-source charge

VDD = 15 V, ID = 80 A

Figure 18-

3.4

6.2-

nC

nC

RG Gate input resistance

f = 1 MHz gate biasBias = 0 test signal

level = 20 mV

open drain

- 1 - Ω

STD96N3LLH6 Electrical characteristics

Doc ID 18432 Rev 1 5/15

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)tr

Turn-on delay time

Rise time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 5 VFigure 12

-19

91-

ns

ns

td(off)tf

Turn-off delay time

Fall time

VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 VFigure 12

-24.5

23.4-

ns

ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISDISDM

(1)

1. Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)-

80

320

A

A

VSD(2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 40 A, VGS = 0 - 1.1 V

trrQrr

IRRM

Reverse recovery time

Reverse recovery chargeReverse recovery current

ISD = 80 A, di/dt = 100 A/µs,

VDD = 24 V

Figure 14

-

28.6

22.81.6

ns

nCA

Electrical characteristics STD96N3LLH6

6/15 Doc ID 18432 Rev 1

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain source on resistance

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Opera

tion i

n this

area

is

Limite

d by m

ax R

DS(on

)

100µs

1ms

10msTj=175°CTc=25°C

Sinlgepulse

AM03376v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/τ

tp

τSingle pulse

δ=0.5

280dpc

ID

150

100

50

00 4 VDS(V)

(A)

2

200

250

VGS=10V

3V

4V

5V

6V7V300

AM03379v1ID

150

100

50

00 4 VGS(V)

(A)

2

200

250

VDS=2V

300

86

AM03380v1

BVDSS

-55 -5 TJ(°C)

(norm)

-30 7020 45 950.90

0.95

1.00

1.05

120 145

@250µA

AM03381v1RDS(on)

3

2

1

00 20 ID(A)

(mΩ)

10 30

4

5

6

7 VGS=10V

40

AM03382v1

STD96N3LLH6 Electrical characteristics

Doc ID 18432 Rev 1 7/15

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

VGS

6

4

2

00 10 Qg(nC)

(V)

40

8

20 30

10

VDD=15V

ID=80A

50

12

AM03378v1 C

1000

1005 15 VDS(V)

(pF)

10 20

Ciss

Coss

Crss

20

AM03377v1

VGS(th)

0.8

0.6

0.2

0-55 -5 TJ(°C)

(norm)

-30

1.0

7020 45 95 120 145

0.4

1.2@250µA

AM03383v1 RDS(on)

1.6

1.4

1.0

0.6-55 20 TJ(°C)

(norm)

-5 9545 70 145120-30

0.8

1.2

1.8 VGS=10VID=40A

AM03384v1

Test circuits STD96N3LLH6

8/15 Doc ID 18432 Rev 1

3 Test circuits

Figure 12. Switching times test circuit for resistive load

Figure 13. Gate charge test circuit

Figure 14. Test circuit for inductive load switching and diode recovery times

Figure 15. Unclamped inductive load test circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

µF3.3µF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX2200µF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100µH

µF3.3 1000

µF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200µF

3.3µF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

STD96N3LLH6 Test circuits

Doc ID 18432 Rev 1 9/15

Figure 18. Gate charge waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2 Qgd

Package mechanical data STD96N3LLH6

10/15 Doc ID 18432 Rev 1

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. DPAK (TO-252) mechanical data

Dim.mm

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e 2.28

e1 4.40 4.60

H 9.35 10.10

L 1

L1 2.80

L2 0.80

L4 0.60 1

R 0.20

V2 0° 8°

STD96N3LLH6 Package mechanical data

Doc ID 18432 Rev 1 11/15

Figure 19. DPAK (TO-252) drawing

0068772_G

Packaging mechanical data STD96N3LLH6

12/15 Doc ID 18432 Rev 1

5 Packaging mechanical data

Figure 20. DPAK footprint(a)

Table 9. DPAK (TO-252) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

a. All dimension are in millimeters

6.7

1.6

1.6

2.3

2.3

6.7 1.8 3

AM08850v1

STD96N3LLH6 Packaging mechanical data

Doc ID 18432 Rev 1 13/15

Figure 21. Tape for DPAK (TO-252)

Figure 22. Reel for DPAK (TO-252)

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. onlyincluding draft andradii concentric around B0

AM08852v1

Top covertape

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

Revision history STD96N3LLH6

14/15 Doc ID 18432 Rev 1

6 Revision history

Table 10. Document revision history

Date Revision Changes

27-Jan-2011 1 First release.

STD96N3LLH6

Doc ID 18432 Rev 1 15/15

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Figure 1. Internal schematic diagramTable 1. Device summary1 Electrical ratingsTable 2. Absolute maximum ratingsTable 3. Thermal data

2 Electrical characteristicsTable 4. StaticTable 5. DynamicTable 6. Switching on/off (inductive load)Table 7. Source drain diode2.1 Electrical characteristics (curves)Figure 2. Safe operating areaFigure 3. Thermal impedanceFigure 4. Output characteristicsFigure 5. Transfer characteristicsFigure 6. Normalized BVDSS vs temperatureFigure 7. Static drain source on resistanceFigure 8. Gate charge vs gate-source voltageFigure 9. Capacitance variationsFigure 10. Normalized gate threshold voltage vs temperatureFigure 11. Normalized on resistance vs temperature

3 Test circuitsFigure 12. Switching times test circuit for resistive loadFigure 13. Gate charge test circuitFigure 14. Test circuit for inductive load switching and diode recovery timesFigure 15. Unclamped inductive load test circuitFigure 16. Unclamped inductive waveformFigure 17. Switching time waveformFigure 18. Gate charge waveform

4 Package mechanical dataTable 8. DPAK (TO-252) mechanical dataFigure 19. DPAK (TO-252) drawing

5 Packaging mechanical dataTable 9. DPAK (TO-252) tape and reel mechanical dataFigure 20. DPAK footprintFigure 21. Tape for DPAK (TO-252)Figure 22. Reel for DPAK (TO-252)

6 Revision historyTable 10. Document revision history