N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE ... This is information on a product in...

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Transcript of N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE ... This is information on a product in...

  • This is information on a product in full production.

    September 2013 DocID025265 Rev 1 1/21

    STD25N10F7, STF25N10F7, STP25N10F7

    N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages

    Datasheet - production data

    Figure 1. Internal schematic diagram

    Features

    • Ultra low on-resistance • 100% avalanche tested

    Applications • Switching applications

    Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

    1 2

    3

    TAB

    TAB

    1 2

    3

    DPAK

    TO-220FP TO-220

    Order codes VDSS RDS(on) max.(1)

    1. @ VGS = 10 V

    ID PTOT

    STD25N10F7 100 V 0.035 Ω 25 A 40 W

    STF25N10F7 100 V 0.035 Ω 19 A 25 W

    STP25N10F7 100 V 0.035 Ω 25 A 50 W

    Table 1. Device summary

    Order codes Marking Package Packaging

    STD25N10F7 25N10F7 DPAK Tape and reel

    STF25N10F7 25N10F7 TO-220FP Tube

    STP25N10F7 25N10F7 TO-220 Tube

    www.st.com

    http://www.st.com

  • Contents STD25N10F7, STF25N10F7, STP25N10F7

    2/21 DocID025265 Rev 1

    Contents

    1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

    2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

    2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

    3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

    4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

    5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

    6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

  • DocID025265 Rev 1 3/21

    STD25N10F7, STF25N10F7, STP25N10F7 Electrical ratings

    21

    1 Electrical ratings

    Table 2. Absolute maximum ratings

    Symbol Parameter Value

    Unit DPAK TO-220 TO-220FP

    VDS Drain-source voltage 100 V

    VGS Gate-source voltage ± 20 V

    ID (1)

    1. This value is rated according to Rthj-c.

    Drain current (continuous) at TC = 25 °C

    25 25 19 A

    ID (1) Drain current (continuous) at

    TC = 100 °C 18 18 13.5 A

    IDM (2)

    2. Pulse width limited by safe operating area.

    Drain current (pulsed) 100 100 76 A

    PTOT (1) Total dissipation at TC = 25 °C 40 50 25 W

    VISO

    Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C)

    - 2500 V

    TJ Operating junction temperature -55 to 175

    °C

    Tstg Storage temperature °C

    Table 3. Thermal resistance

    Symbol Parameter Value

    Unit DPAK TO-220FP TO-220

    Rthj-case Thermal resistance junction-case 3.75 6 3 °C/W

    Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

    Rthj-pcb Thermal resistance junction-pcb 50 °C/W

  • Electrical characteristics STD25N10F7, STF25N10F7, STP25N10F7

    4/21 DocID025265 Rev 1

    2 Electrical characteristics

    (TCASE = 25 °C unless otherwise specified)

    Table 4. On/off states

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    V(BR)DSS Drain-source breakdown voltage (VGS= 0)

    ID = 250 μA 100 - V

    IDSS Zero gate voltage drain current (VGS = 0)

    VDS = 100 V VDS = 100 V; TC = 125 °C

    10 100

    μA μA

    IGSS Gate body leakage current (VDS = 0)

    VGS = ± 20 V ±100 nA

    VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2.5 4.5 V

    RDS(on) Static drain-source on- resistance

    VGS = 10 V, ID = 12.5 A 0.027 0.035 Ω

    Table 5. Dynamic

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    Ciss Input capacitance

    VDS = 50 V, f = 1 MHz, VGS = 0

    - 920 - pF

    Coss Output capacitance - 215 - pF

    Crss Reverse transfer capacitance

    - 19 - pF

    Qg Total gate charge VDD = 50 V, ID = 25 A

    VGS = 10 V Figure 18

    - 14 - nC

    Qgs Gate-source charge - 7 - nC

    Qgd Gate-drain charge - 3 - nC

  • DocID025265 Rev 1 5/21

    STD25N10F7, STF25N10F7, STP25N10F7 Electrical characteristics

    21

    Table 6. Switching times

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    td(on) Turn-on delay time VDD = 50 V, ID = 12.5 A,

    RG = 4.7 Ω, VGS = 10 V Figure 17

    - 9.8 - ns

    tr Rise time - 14 - ns

    td(off) Turn-off delay time - 14.8 - ns

    tf Fall time - 4.6 - ns

    Table 7. Source-drain diode

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    ISD Source-drain current - 25 A

    ISDM (1)

    1. Pulse width limited by safe operating area.

    Source-drain current (pulsed) - 100 A

    VSD (2)

    2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

    Forward on voltage ISD = 25 A, VGS = 0 - 1.1 V

    trr Reverse recovery time ISD = 25 A, di/dt = 100 A/μs, VDD = 80 V, Tj = 150 °C

    - 38 ns

    Qrr Reverse recovery charge - 29 nC

    IRRM Reverse recovery current - 1.7 A

  • Electrical characteristics STD25N10F7, STF25N10F7, STP25N10F7

    6/21 DocID025265 Rev 1

    2.1 Electrical characteristics (curves)

    Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK

    ID

    100

    10

    1

    0.1

    0.1 1 VDS(V)10

    (A)

    Op era

    tio n in

    thi s ar

    ea is

    Lim ited

    by ma

    x R DS

    (on )

    100µs

    1ms 10ms

    Tj=150°C Tc=25°C Single pulse

    0.01

    AM16006v1

    Single pulse

    0.05 0.02 0.01

    δ=0.5 0.2 0.1

    K

    10 tp(s)-5 10-4 10 10 10

    10-1

    10-6 10-2

    -3 -2 -1

    AM16024v1

    Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

    ID

    10

    1

    0.1 1 VDS(V)10

    (A)

    Op er

    at ion

    in th

    is ar

    ea is

    Lim ite

    d b y m

    ax RD

    S(o n)

    100µs

    1ms

    10ms

    Tj=150°C Tc=25°C Single pulse

    0.1

    AM16022v1

    Single pulse

    0.05 0.02 0.01

    δ=0.5

    0.2 0.1

    K

    10 tp(s)-5 10-4 10 10

    10-1

    10-6 10-2

    -3 -2 10 -1

    AM16025v1

    Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220

    ID

    1

    0.1

    0.1 1 VDS(V)10

    (A)

    Op era

    tio n in

    th is a

    rea is

    Lim ited

    by ma

    x R DS

    (on )

    100µs

    1ms

    10ms

    Tj=150°C Tc=25°C Single pulse

    0.01

    10

    100

    AM16023v1

    Single pulse

    0.05 0.02 0.01

    δ=0.5

    0.2 0.1

    K

    10 tp(s)-5 10-4 10 10

    10-1

    10-6 10-2

    -3 -2 10 -1

    AM16026v1

  • DocID025265 Rev 1 7/21

    STD25N10F7, STF25N10F7, STP25N10F7 Electrical characteristics

    21

    Figure 8. Output characteristics Figure 9. Transfer characteristics

    Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

    Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage vs temperature

    ID

    60

    40

    20

    0 0 VDS(V)

    (A)

    5

    80

    5V

    6V

    VGS=10V

    70

    50

    30

    10

    7V

    8V

    9V

    1 2 3 4 6 7 8

    AM16008v1 ID

    60

    40

    20

    0 3 VGS(V)5

    (A)

    2 4

    80

    10

    30

    50

    70 VDS=6V

    6 7 8 9 10 11

    AM16009v1

    VGS

    6

    4

    2

    0 0 5 Qg(nC)

    (V)

    8

    10 15

    10

    VDD=50V ID=25A

    12

    AM16010v1 RDS(on)

    30.0

    20.0

    10.0

    0.0 0 20 ID(A)

    (mΩ)

    10

    40.0

    0.096

    VGS=10V

    5 15

    AM16011v1

    C

    600

    400

    200

    0 0 20 VDS(V)

    (pF)

    10

    800

    30

    Ciss

    Coss Crss

    40 50 60 70 80

    1000

    AM16012v1 VGS(th)

    0.8

    0.7

    0.6

    0.5

    -55 -5 TJ(°C)

    (norm)

    -30

    0.9

    7020 45 95

    ID=250µA

    0.4 120

    1

    1.1

    AM16013v1

  • Electrical characteristics STD25N10F7, STF25N10F7, STP25N10F7

    8/21 DocID025265 Rev 1

    Figure 14. Normalized on-resistance vs temperature

    Figure 15. Normalized BVDSS vs temperature

    Figure 16. Source-drain diode forward characteristics

    RDS(on)

    2

    1.5

    0.5

    0 TJ(°C)

    (norm)

    ID=12.5A

    1

    -55 -5-30 7020 45 95 120

    AM16014v1 VDS

    TJ(°C)

    (norm)

    0.96

    0.98

    1

    1.02

    ID=250µA

    -55 -5-30 7020 45 95 120