This is information on a product in full production.

September 2013 DocID18223 Rev 5 1/16

16

STL160N3LLH6

N-channel 30 V, 0.0011 Ω typ., 45 A STripFET™ VI DeepGATE™

Power MOSFET in a PowerFLAT™ 5x6 package

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• RDS(on)

* Qg industry benchmark

• Extremely low on-resistance RDS(on)

• Very low switching gate charge

• High avalanche ruggedness

• Low gate drive power losses

Applications• Switching applications

DescriptionThis device is an N-channel Power MOSFET

developed using the 7th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on)

in all packages.

PowerFLAT™ 5x6

Order code VDSS RDS(on) max ID

STL160N3LLH6 30 V 0.0013 Ω 45 A (1)

1. The value is rated according Rthj-pcb

Table 1. Device summary

Order code Marking Package Packaging

STL160N3LLH6 160N3LH6 PowerFLAT™ 5x6 Tape and reel

www.st.com

Contents STL160N3LLH6

2/16 DocID18223 Rev 5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

DocID18223 Rev 5 3/16

STL160N3LLH6 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS

Drain-source voltage 30 V

VGS

Gate-source voltage ± 20 V

ID

(1)

1. The value is rated according to Rthj-c

.

Drain current (continuous) at TC

= 25 °C 240 A

ID

(1)Drain current (continuous) at T

C = 100 °C 170 A

ID

(2)

2. The value is rated according to Rthj-pcb.

Drain current (continuous) at Tpcb

= 25 °C 45 A

ID

(2)Drain current (continuous) at T

pcb=100 °C 32 A

IDM

(3)

3. Pulse width limited by safe operating area.

Drain current (pulsed) 180 A

PTOT

(1)Total dissipation at T

C = 25 °C 136 W

PTOT

(2)Total dissipation at T

pcb = 25 °C 4.8 W

Derating factor 0.03 W/°C

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case

Thermal resistance junction-case (steady state) 1.1 °C/W

Rthj-pcb

(1)

1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

Thermal resistance junction-pcb 31.3 °C/W

Table 4. Avalanche data

Symbol Parameter Value Unit

IAV

Not-repetitive avalanche current

(pulse width limited by Tj max)

35 A

EAS

Single pulse avalanche energy

(starting TJ

= 25 °C, ID

= IAV

)

900 mJ

Electrical characteristics STL160N3LLH6

4/16 DocID18223 Rev 5

2 Electrical characteristics

(TCASE

= 25 °C unless otherwise specified).

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID

= 250 μA, VGS

= 0 30 V

IDSS

Zero gate voltage drain

current (VGS

= 0)

VDS

= 30 V,

VDS

= 30 V at TC

= 125 °C

1

10

μA

μA

IGSS

Gate body leakage current

(VDS

= 0)

VGS

= ±20 V ±100 nA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 1 V

RDS(on)

Static drain-source on-

resistance

VGS

= 10 V, ID

= 17.5 A 0.0011 0.0013 Ω

VGS

= 4.5 V, ID

= 17.5 A 0.0016 0.0020 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Input capacitance

VDS

= 25 V, f=1 MHz,

VGS

=0

- 6375 - pF

Coss

Output capacitance - 1230 - pF

Crss

Reverse transfer

capacitance

- 675 - pF

Qg

Total gate chargeV

DD=15 V, I

D = 35 A

VGS

=4.5 V

(see Figure 14)

- 61.5 - nC

Qgs

Gate-source charge - 20 nC

Qgd

Gate-drain charge - 24 nC

RG

Gate input resistance

f=1 MHz gate DC bias = 0

test signal level = 20 mV

open drain

- 1.4 - Ω

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

Turn-on delay time

VDD

=15 V, ID

= 17.5 A,

RG

=4.7 Ω, VGS

=10 V

(see Figure 13)

- 22.5 - ns

tr

Rise time - 32 - ns

td(off)

Turn-off delay time - 107.5 - ns

tf

Fall time - 54 - ns

DocID18223 Rev 5 5/16

STL160N3LLH6 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

Source-drain current - 45 A

ISDM

(1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 180 A

VSD

(2)

2. Pulsed: pulse duration=300μs, duty cycle 1.5%.

Forward on voltage ISD

= 35 A, VGS

=0 - 1.1 V

trr

Reverse recovery timeISD

= 35 A,

di/dt = 100 A/μs,

VDD

=25 V

- 37.2 ns

Qrr

Reverse recovery charge - 36 nC

IRRM

Reverse recovery current - 1.9 A

Electrical characteristics STL160N3LLH6

6/16 DocID18223 Rev 5

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this a

rea is

Limite

d by max RDS(on)

100ms

1s

10ms

Tj=175°CTc=25°CSingle pulse

AM08599v1

Single pulse

0.050.020.01

δ=0.5K

10 tp(s)-5 10 -4 10 -3 1

10 -3

10 -2

10-1

10 -610 -4

10 -2 10

AM15985v1

ID

60

40

20

00 1.0 VDS(V)2.0

(A)

0.5 1.5 2.5

80

1003V

4V120

140

160

180

AM08600v1ID

30

20

10

00 4 VGS(V)

(A)

2

40

50

1 3

60

70

VDS=2V

80

AM08601v1

BVDSS

-75 TJ(°C)

(norm)

-25 7525 1250.90

0.95

1.00

1.05

1.10

175

AM08602v1RDS(on)

1.05

1.00

0.950 20 ID(A)

(mΩ)

10 30

1.10

1.15

VGS=10V

5 15 25 35 40

AM08603v1

DocID18223 Rev 5 7/16

STL160N3LLH6 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on-resistance vs temperature

Figure 12. Source-drain diode forward characteristics

VGS

6

4

2

00 20 Qg(nC)

(V)

80

8

40 60

10

VDD=15VID=35A

100

12

120

AM08604v1C

10000

0 10 VDS(V)

(pF)

5 20

Ciss

Coss

Crss

2000

3000

4000

5000

6000

7000

8000

9000

15 25 30

AM08605v1

VGS(th)

0.8

0.6

0.4

0.2-75 TJ(°C)

(norm)

-25

1.0

7525 125 175

1.2

AM08606v1 RDS(on)

1.2

0.8

0.4-75 TJ(°C)

(norm)

-25 7525 125 175

0.6

1.0

1.4

1.6

1.8

AM08607v1

VSD

0 20 ISD(A)

(V)

10 30 350.3

0.4

0.5

0.6

0.7

0.8

0.9

25155

TJ=-55°C

TJ=25°C

TJ=175°C

40

AM08608v1

Test circuits STL160N3LLH6

8/16 DocID18223 Rev 5

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID18223 Rev 5 9/16

STL160N3LLH6 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

Package mechanical data STL160N3LLH6

10/16 DocID18223 Rev 5

Table 9. PowerFLAT™ 5x6 type S-C mechanical data

Dim.mm

Min. Typ. Max.

A 0.80 1.00

A1 0.02 0.05

A2 0.25

b 0.30 0.50

D 5.20

E 6.15

D2 4.11 4.31

E2 3.50 3.70

e 1.27

e1 0.65

L 0.715 1.015

K 1.05 1.35

DocID18223 Rev 5 11/16

STL160N3LLH6 Package mechanical data

Figure 19. PowerFLAT™ 5x6 type S-C mechanical data

Package mechanical data STL160N3LLH6

12/16 DocID18223 Rev 5

Figure 20. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)

Footprint

DocID18223 Rev 5 13/16

STL160N3LLH6 Packaging mechanical data

5 Packaging mechanical data

Figure 21. PowerFLAT™ 5x6 tape(a)

Figure 22. PowerFLAT™ 5x6 package orientation in carrier tape.

a. All dimensions are in millimeters.

Measured from centerline of sprocket holeto centerline of pocket.

Cumulative tolerance of 10 sprocketholes is ± 0.20 .

Measured from centerline of sprockethole to centerline of pocket.

(I)

(II)

(III)

2

2.0±0.1 (I)

Bo

(5.3

0±0.

1)

Ko (1.20±0.1)

±0.05)

Ø1.5 MIN.

Ø1.55±0.05

P

Ao(6.30±0.1)

F(5

.50±

0.1)

(III)

W(1

2.00

±0.

3)

1.75±0.1

4.0±0.1 (II)P 0

Y

Y

SECTION Y-Y

CL

P1(8.00±0.1)

Do

D1

E1(0.30

T

REF.R0.50

REF 0.2

0

Base and bulk quantity 3000 pcs

8234350_Tape_rev_C

Pin 1 identification

Packaging mechanical data STL160N3LLH6

14/16 DocID18223 Rev 5

Figure 23. PowerFLAT™ 5x6 reel

2.20Ø21.2

13.00

CORE DETAIL

2.501.90

R0.60

77

128

ØA

R1.10

2.50

4.00

R25.00

PART NO.

W1

W2 18.4 (max)

W3

06 PS

ESD LOGO

ATTE

NTIO

N

OBS

ERVE

PRE

CAUT

IONS

FOR

HAND

LING

ELE

CTRO

STAT

ICSE

NSIT

IVE

DEVI

CES

11.9/15.4

12.4 (+2/-0)

A330 (+0/-4.0)

All dimensions are in millimeters

ØN178(±2.0)

8234350_Reel_rev_C

DocID18223 Rev 5 15/16

STL160N3LLH6 Revision history

6 Revision history

Table 10. Document revision history

Date Revision Changes

10-Nov-2010 1 First release.

10-Nov-2011 2

Section 4: Package mechanical data has been updated.

Minor text changes.

31-Jul-2013 3

– Modified: ID

in the title and in the Features Table, Table 5, 6 and 7– Modified: values on the Table 2, R

thj-case on the Table 3, max

values for the ISD

and ISDM

on Table 8– Updated: Section 4: Package mechanical data– Inserted: Section 5: Packaging mechanical data

– Modified: Figure 13, 14, 15 and 16– Minor text changes

09-Aug-2013 4

– Modified: drain current (continuous) at TC

= 100 °C value and drain

current (continuous) at Tpcb

=100 °C value

– Modified: test conditions of RDS(on)

– Modified: ID

in Table 6 and 7– Modified: I

SD in Table 8

– Modified: Figure 2, 3, 4, 5, 7, 12, 13, 14, 15 and 16– Updated: Section 4: Package mechanical data– Minor text changes

24-Sep-2013 5

– Modified: marking in Table 1– Minor text changes

STL160N3LLH6

16/16 DocID18223 Rev 5

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