P-channel 30 V, 0.024 typ., 12 A, STripFET VI DeepGATE ... ... This is information on a product in...

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Transcript of P-channel 30 V, 0.024 typ., 12 A, STripFET VI DeepGATE ... ... This is information on a product in...

  • This is information on a product in full production.

    February 2014 DocID023574 Rev 5 1/16

    STD26P3LLH6

    P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package

    Datasheet - production data

    Figure 1. Internal schematic diagram

    Features

    • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate input resistance

    Applications • Switching applications • LCC converters, resonant converters

    Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages

    Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

    1

    3

    TAB

    2

    DPAK

    D(2 or TAB)

    G(1)

    S(3) AM11258v1

    Order code VDSS RDS(on)

    max ID PTOT

    STD26P3LLH6 30 V 0.030 Ω(1)

    1. @ VGS= 10 V

    12 A 40 W

    Table 1. Device summary

    Order code Marking Package Packaging

    STD26P3LLH6 26P3LLH6 DPAK Tape and reel

    www.st.com

    http://www.st.com

  • Contents STD26P3LLH6

    2/16 DocID023574 Rev 5

    Contents

    1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

    2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

    2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

    3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

    4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

    5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

    6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

  • DocID023574 Rev 5 3/16

    STD26P3LLH6 Electrical ratings

    16

    1 Electrical ratings

    Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

    Table 2. Absolute maximum ratings

    Symbol Parameter Value Unit

    VDS Drain-source voltage 30 V

    VGS Gate-source voltage ±20 V

    ID (1)

    1. Limited by wire bonding.

    Drain current (continuous) at TC = 25 °C 12 A

    ID (1) Drain current (continuous) at TC = 100 °C 8.5 A

    IDM (1)(2)

    2. Pulse width limited by safe operating area.

    Drain current (pulsed) 48 A

    PTOT (1) Total dissipation at TC = 25 °C 40 W

    Tstg Storage temperature -55 to 175 °C

    Tj Max. operating junction temperature 175 °C

    Table 3. Thermal data

    Symbol Parameter Value Unit

    Rthj-case Thermal resistance junction-case max 3.75 °C/W

    Table 4. Avalanche characteristics

    Symbol Parameter Value Unit

    EAS

    Single pulse avalanche energy (starting TJ=25 °C, ID=6 A, IAS=12 A, VDD=25 V, Vgs=10 V)

    350 mJ

  • Electrical characteristics STD26P3LLH6

    4/16 DocID023574 Rev 5

    2 Electrical characteristics

    (TCASE = 25 °C unless otherwise specified)

    Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

    Table 5. Static

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    V(BR)DSS Drain-source breakdown Voltage

    ID = 250 μA, VGS= 0 30 V

    IDSS Zero gate voltage drain current (VGS = 0)

    VDS = 30 V 1 μA

    VDS = 30 V, Tc = 125 °C 10 μA

    IGSS Gate body leakage current VGS = ± 20 V, (VDS = 0) ±100 nA

    VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 1 2.5 V

    RDS(on) Static drain-source on- resistance

    VGS = 10 V, ID = 6 A 0.024 0.03 Ω

    VGS = 4.5 V, ID = 6 A 0.038 0.045 Ω

    Table 6. Dynamic

    Symbol Parameter Test conditions Min Typ. Max. Unit

    Ciss Input capacitance

    VDS = 25 V, f=1 MHz, VGS = 0

    - 1450 - pF

    Coss Output capacitance - 178 - pF

    Crss Reverse transfer capacitance

    - 120 - pF

    Qg Total gate charge VDD = 24 V, ID = 12 A

    VGS = 4.5 V (see Figure 14)

    - 12 - nC

    Qgs Gate-source charge - 4.4 - nC

    Qgd Gate-drain charge - 5 - nC

    Rg Gate input resistance

    f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0

    - 1.8 - Ω

  • DocID023574 Rev 5 5/16

    STD26P3LLH6 Electrical characteristics

    16

    Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

    Table 7. Switching on/off (inductive load)

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    td(on) Turn-on delay time VDD = 24 V, ID = 1.5 A,

    RG = 4.7 Ω, VGS = 10 V (see Figure 13)

    - 15 - ns

    tr Rise time - 15 - ns

    td(off) Turn-off delay time - 24 - ns

    tf Fall time - 21 - ns

    Table 8. Source drain diode

    Symbol Parameter Test conditions Min. Typ. Max. Unit

    ISD Source-drain current - 12 A

    ISDM (1)

    1. Pulse width limited by safe operating area

    Source-drain current (pulsed) - 48 A

    VSD (2)

    2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

    Forward on voltage ISD = 12 A, VGS = 0 - 1.1 V

    trr Reverse recovery time ISD = 12 A, di/dt = 100 A/μs, VDD = 16 V

    (see Figure 15)

    - 15 ns

    Qrr Reverse recovery charge - 6.5 nC

    IRRM Reverse recovery current - 0.9 A

  • Electrical characteristics STD26P3LLH6

    6/16 DocID023574 Rev 5

    2.1 Electrical characteristics (curves)

    Figure 2. Safe operating area Figure 3. Thermal impedance

    ID

    10

    1

    0.1 0.1 1 VDS(V)10

    (A)

    Op er

    at ion

    in th

    is ar

    ea is

    Lim ite

    d by

    m ax

    R DS

    (o n)

    100µs

    1ms

    10ms

    Tj=175°C Tc=25°C Single pulse

    AM15963v1

    Figure 4. Output characteristics Figure 5. Transfer characteristics

    Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

    ID

    30

    20

    10

    0 0 0.4 VDS(V)0.8

    (A)

    0.2 0.6 1

    3V

    4V

    1.2

    25

    15

    5

    5V

    6V7V8V9V 10V

    35

    AM15964v1 ID

    30

    20

    10

    0 0 4 VGS(V)8

    (A)

    2 6

    5

    15

    25

    35 VDS=1V

    AM15965v1

    VGS

    6

    4

    2

    0 0 4 Qg(nC)

    (V)

    16

    8

    8 12

    10

    12

    20 24 28

    AM15966v1 RDS(on)

    30.0

    20.0

    10.0

    0.0 0 8 ID(A)

    (mΩ)

    4

    VGS=10V

    2 6 10

    40.0

    AM15967v1

  • DocID023574 Rev 5 7/16

    STD26P3LLH6 Electrical characteristics

    16

    Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature

    Figure 10. Normalized on-resistance vs temperature

    Figure 11. Normalized VDS vs temperature

    Figure 12. Source-drain diode forward characteristics

    C

    600

    400

    200

    0 0 10 VDS(V)

    (pF)

    5

    800

    15

    Ciss

    Coss Crss

    20 25

    1000

    1200

    1400

    1600

    AM15968v1 VGS(th)

    0.8

    0.6

    0.4

    0.2

    -55 -5 TJ(°C)

    (norm)

    -30

    1

    7020 45 95

    ID=250µA

    0 120

    AM15969v1

    RDS(on)

    0.8

    0.6

    0.2

    0 -55 5 TJ(°C)

    (norm)

    -30 7020 45 95

    1

    1.2

    1.4

    ID=6A

    0.4

    1.6

    120

    AM15970v1 VDS

    TJ(°C)

    (norm)

    0.94

    0.96

    0.98

    1

    1.02

    1.04

    1.06

    1.08 ID=1mA

    -55 5-30 7020 45 95 120

    AM15971v1

    VSD

    2 6 ISD(A)

    (V)

    4 8 10

    0.6

    0.7

    0.8

    0.9

    TJ=-55°C

    TJ=175°C

    TJ=25°C

    1

    0.5

    AM15972v1

  • Test circuits STD26P3LLH6

    8/16 DocID023574 Rev 5

    3 Test circuits

    Figure 13. Switching times test circuit for resistive load

    Figure 14. Gate charge test circuit

    Figure 15. Test circuit for diode recovery behavior

    Figure 16. Unclamped inductive load test circuit

    AM11255v1 AM11256v1

    AM11257v1

    VGS

    Pw

    VD

    ID

    D.U.T.

    L

    2200 μF

    3.3 μF VDD

    AM18080v1

    Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

    AM01472v1

    V(BR)DSS

    VDDVDD

    VD

    IDM

    ID

    AM01473v1

    VDS

    ton

    tdon tdoff

    toff

    tftr

    90%

    10%

    10%

    0

    0

    90%

    90%

    10%

    VGS

  • DocID023574 Rev 5 9/16

    STD26P3LLH6 Package mechanical data

    16

    4 Package mechanical data

    In order to meet en