Vishay SiliconixSi4542DY

Document Number: 70666S09-0868-Rev. G, 18-May-09

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N- and P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21

Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)

N-Channel 300.025 at VGS = 10 V 6.9

0.035 at VGS = 4.5 V 5.8

P-Channel - 300.032 at VGS = - 10 V - 6.1

0.045 at VGS = - 4.5 V - 5.1

S1 D1

G1 D1

S2 D2

G2 D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free) Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

G1

S1

N-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage VDS 30 - 30V

Gate-Source Voltage VGS ± 20 ± 20

Continuous Drain Current (TJ = 150 °C)aTA = 25 °C

ID6.9 - 6.1

ATA = 70 °C 5.5 - 4.9

Pulsed Drain Current IDM 40 - 40

Continuous Source Current (Diode Conduction)a IS 1.7 - 1.7

Maximum Power DissipationaTA = 25 °C

PD2.0

WTA = 70 °C 1.3

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS Parameter Symbol N- or P-Channel Unit

Maximum Junction-to-Ambienta RthJA 62.5 °C/W

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Document Number: 70666S09-0868-Rev. G, 18-May-09

Vishay SiliconixSi4542DY

Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1.0

VVDS = VGS, ID = - 250 µA P-Ch - 1.0

Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch ± 100

nAP-Ch ± 100

Zero Gate Voltage Drain Current IDSS

VDS = 30 V, VGS = 0 V N-Ch 1

µAVDS = - 30 V, VGS = 0 V P-Ch - 1

VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 25

VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 25

On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V N-Ch 20

AVDS ≤ - 5 V, VGS = - 10 V P-Ch - 20

Drain-Source On-State Resistancea RDS(on)

VGS = 10 V, ID = 6.9 A N-Ch 0.020 0.025

ΩVGS = - 10 V, ID = - 6.1 A P-Ch 0.026 0.032

VGS = 4.5 V, ID = 5.8 A N-Ch 0.026 0.035

VGS = - 4.5 V, ID = - 5.1 A P-Ch 0.036 0.045

Forward Transconductancea gfs VDS = 15 V, ID = 6.9 A N-Ch 25

SVDS = - 15 V, ID = - 6.1 A P-Ch 16

Diode Forward Voltagea VSDIS = 1.7 A, VGS = 0 V N-Ch 1.2

VIS = - 1.7 A, VGS = 0 V P-Ch - 1.2

Dynamicb

Total Gate Charge Qg N-ChannelVDS = 15 V, VGS = 10 V, ID = 6.9 A

P-ChannelVDS = - 15 V, VGS = - 10 V, ID = - 6.1 A

N-Ch 30 50

nC

P-Ch 32 50

Gate-Source Charge Qgs N-Ch 7.5

P-Ch 7.0

Gate-Drain Charge Qgd N-Ch 3.5

P-Ch 5.0

Gate Resistance RgN-Ch 0.5 2 3.4

ΩP-Ch 2 4 6.8

Turn-On Delay Time td(on) N-ChannelVDD = 15 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

P-ChannelVDD = - 15 V, RL = 10 Ω

ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω

N-Ch 12 20

ns

P-Ch 10 20

Rise Time trN-Ch 10 20

P-Ch 10 20

Turn-Off Delay Time td(off) N-Ch 60 90

P-Ch 55 80

Fall Time tfN-Ch 15 30

P-Ch 25 40

Source-Drain Reverse Recovery Time

trrIF = 1.7 A, dI/dt = 100 A/µs N-Ch 50 90

IF = - 1.7 A, dI/dt = 100 A/µs P-Ch 50 90

Reverse Recovery Time QrrIF = 1.7 A, dI/dt = 100 A/µs N-Ch 45

nCIF = - 1.7 A, dI/dt = 100 A/µs P-Ch 55

Document Number: 70666S09-0868-Rev. G, 18-May-09

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Vishay SiliconixSi4542DY

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

8

16

24

32

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V)

-D

rain

Cur

rent

(A

)I D

VGS = 10 V thru 5 V

3 V

4 V

0.00

0.01

0.02

0.03

0.04

0.05

0 10 20 30 40

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0 6 12 18 24 30

- G

ate-

to-S

ourc

e V

olta

ge (

V)

Qg - Total Gate Charge (nC)

V GS

VDS = 15 VID = 6.9 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

10

20

30

40

0 1 2 3 4 5

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I D TC = 125 °C

- 55 °C25 °C

0

500

1000

1500

2000

2500

3000

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V)

C -

Cap

acita

nce

(pF

)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 VID = 6.9 A

TJ - Junction Temperature (°C)

(Nor

mal

ized

)

- O

n-R

esis

tanc

e R

DS

(on)

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Document Number: 70666S09-0868-Rev. G, 18-May-09

Vishay SiliconixSi4542DY

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1

10

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD - Source-to-Drain Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

30

20

40

TJ = 150 °C

TJ = 25 °C

- 1.0

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Var

ianc

e (V

)V

GS

(th)

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.02

0.04

0.06

0.08

0.10

0 2 4 6 8 10

RD

S(o

n) -

On-

Res

ista

nce(

Ω)

VGS - Gate-to-Source Voltage (V)

ID = 6.9 A

0

5

10

15

20

25

30

0.01 0.10 1.00 10.00

Pow

er (

W)

Time (s)

TC = 25 °CSingle Pulse

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (s)

2

1

0.1

0.0110-4 10-3 10-2 10-1 1

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

30

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

10

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 62.5 °C/W

3. TJM - TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

Document Number: 70666S09-0868-Rev. G, 18-May-09

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Vishay SiliconixSi4542DY

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

8

16

24

32

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I D

VGS = 10 V thru 5 V

4 V

2, 1 V

3 V

0.00

0.02

0.04

0.06

0.08

0.10

0 8 16 24 32 40

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0 7 14 21 28 35

- G

ate-

to-S

ourc

e V

olta

ge (

V)

Qg - Total Gate Charge (nC)

VG

S

VDS = 15 VID = 6.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

8

16

24

32

40

0 1 2 3 4 5

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I D

TC = - 55 °C

125 °C

25 °C

0

800

1600

2400

3200

0 6 12 18 24 30

VDS - Drain-to-Source Voltage (V)

C -

Cap

acita

nce

(pF

)

Crss

Coss

Ciss

0.50

0.75

1.00

1.25

1.50

1.75

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 VID = 6.1 A

TJ - Junction Temperature (°C)

(Nor

mal

ized

)

- O

n-R

esis

tanc

eR

DS

(on)

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Document Number: 70666S09-0868-Rev. G, 18-May-09

Vishay SiliconixSi4542DY

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?70666.

Source-Drain Diode Forward Voltage

Threshold Voltage

VSD - Source-to-Drain Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

40

10

10 0.3 0.6 0.9 1.2 1.5

TJ = 150 °C

TJ = 25 °C

TJ - Temperature (°C)

- 0.4

- 0.2

0.0

0.2

0.4

0.6

0.8

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

Var

ianc

e (V

)V

GS

(th)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

RD

S(o

n) -

On-

Res

ista

nce

(Ω)

VGS - Gate-to-Source Voltage (V)

0.00

0.04

0.08

0.12

0.16

0.20

0 2 4 6 8 10

ID = 6.1 A

0

5

10

15

20

25

30

0.01 0.10 1.00 10.00Time (s)

Pow

er (

W)

Normalized Thermal Transient Impedance, Junction-to-AmbientSquare Wave Pulse Duration (s)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

2

1

0.1

0.0110-4 10-3 10-2 10-1 1 10 30

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 62.5 °C/W

3. TJM - TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

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Revision: 08-Feb-17 1 Document Number: 91000

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