2SK2975MITSUBISHI RF POWER MOS FET

Nov. ´97

DESCRIPTION2SK2975 is a MOS FET type transistor specifically designed for

VHF/UHF power amplifiers applications.

FEATURES• High power gain:Gpe≥8.4dB

@VDD=9.6V,f=450MHz,Pin=30dBm

• High efficiency:55% typ.

• Source case type seramic package

(connected internally to source)

APPLICATIONFor drive stage and output stage of power amplifiers in VHF/UHF

band portable radio sets.

Typ MaxMin

LimitsParameter Test conditions

Symbol Parameter Ratings

175

VDSS

VGSS

Pch

Tj

Tstg

UnitDrain to source voltageGate to source voltage

Channel dissipationJunction temperatureStorage temperature

30

±2010

-40 to +110

VVW˚C

ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)

Symbol Unit

IDSS

IGSS

VTH

Ciss

Coss

hD

Pout

Threshold voltage

Note: Above parameters,ratings,limits and conditions are subject to change.

VDS=17V, VGS=0V

55

101

1.7

µAµA

V

%

1.0

Note1: Above parameters are guaranteed independently.

VGS=10V, VDS=0VVDS=7V, IDS=1mAVGS=10V, VDS=0V,f=1MHzVDS=10V, VGS=0V,f=1MHz

VDS=9.6V, Pin=1W,f=450MHz7

50

88045 pF

pF

W

Conditions

Tc=25˚C (Note2)

˚C

2: Solder source pad on Copper Block(14×2.8×2mm)

OUTLINE DRAWING Dimensions in mm

1 : DRAIN2 : SOURCE3 : GATE

MARKING

23

3.50

1

t=1.2MAX

(BOTTOM)(TOP)

4.9

INDEX MARK

2.0

LOT No.TYPE No.

INDEXMARK

2SK2975MITSUBISHI RF POWER MOS FET

Nov. ´97

1.5mm46mm

C2GR40-1010pF

R1CR10-5625600Ω

R2CR10-5625600Ω

C7GR40-1021000pF

C4GR40-1010pF

C12GR40-13013pF

C13GR40-1021000pFL1

4Turns AWG#26,φ1.1Enameled wire(mm)

C14GR40-1010pF

C1GR40-1021000pF

VGGINPUT VDD OUTPUT

C5GR40-1021000pF

C6

10 µF 50V

C8GR40-1010pF

C9GR40-1021000pF

C10

10 µF 50V

C11GR40-27027pF

C3GR40-31031pF

12.5mm 12mm 22.5mm 16mm

3mm 3mm

PO, add VS. VDD

DRAIN SUPPLY VOLTAGE VDD(V)

4

34

5 8

16

20

10

28

3230

262422

18

141210

3 6 7 9

3638404244464850

70

30

40

0

60

50

20

10

80

90

100

IDS VS. VGS

VGS(V)

0 1.0 2.0 3.0 5.0

0.5

1.0

1.5

3.0

4.0

2.0

00.5 1.5 2.5 3.5 4.5

2.5

TYPICAL PERFORMANCE DATA

EQUIVALENT CIRCUIT

Note: Board material-glass epoxi substratemicri strip line width=2.8mm, ε r :4.8,t=1.6mm

IDS VS. VDS

VDS(V)

0 2 4 6 10

4

80

1 3 5 7 9

TC=25˚C

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

VGS=2.0V

5

3.5

4.0

3

2

1

4.5VDS=9.6VTC=25˚C

PO, add VS. Pin

INPUT POWER Pin (dBm)

0 8

34

12 24

16

20

032

28

3230

262422

18

141210

4

4 16 20 26

40

60

70

0

90

100

80

50

10

PO

2

68

363840

30

20

ηadd

2 6 10 14 18 22 28 30 11 12 13

ηadd

PO

2SK2975MITSUBISHI RF POWER MOS FET

Nov. ´97

S-PARAMETER DATA(TYPICAL)FREQ.(MHz)

0.8360.8070.8190.8350.8580.8720.8860.8990.9090.9150.9240.9300.9330.9350.9440.9460.9480.9490.9510.9560.9570.9540.9530.9540.9560.9540.9540.9500.9500.950

-115.463-141.825-151.724-156.464-159.472-161.678-163.630-165.272-166.371-167.628-168.601-169.541-170.535-171.602-172.164-173.164-173.673-174.773-175.444-175.951-177.019-177.922-178.800-179.511179.625178.904177.726176.753175.847174.793

0.0210.0210.0200.0180.0160.0140.0120.0100.0100.0100.0100.0110.0130.0150.0170.0190.0210.0240.0260.0280.0310.0330.0350.0380.0400.0420.0450.0460.0490.051

11.967-16.870-37.649-50.731-62.227-72.477-77.156-82.951-79.763-77.947-77.893-76.571-82.268-88.668-93.156

-103.513-113.867-124.065-134.453-144.025-157.299-169.332179.717167.673155.999144.195132.079119.508107.540

95.929

19.13610.141

6.5564.6253.4752.7092.1751.7881.5011.2791.1070.9690.8550.7590.6900.6250.5700.5250.4870.4460.4110.3860.3680.3370.3230.3030.2870.2700.2600.244

97.41865.06540.79920.767

2.085-14.865-30.984-46.429-61.362-75.599-89.665

-103.303-116.569-130.173-143.380-156.123-169.394177.293165.298152.305139.706127.148115.532102.465

90.52078.44966.53353.72041.67129.932

0.5590.6360.6800.7200.7590.7780.8070.8300.8390.8580.8690.8740.8850.8910.8930.9050.9080.9090.9150.9150.9150.9240.9260.9250.9300.9270.9290.9270.9310.927

-143.723-154.490-158.082-159.659-160.702-161.884-163.331-164.014-164.860-165.663-166.475-166.923-167.633-168.317-168.904-169.826-170.437-171.046-171.892-172.318-173.122-174.349-174.354-174.989-175.742-176.300-177.658-178.157-178.520-179.724

50100150200250300350400450500550600650700750800850900950

10001050110011501200125013001350140014501500

S11 S12 S21 S22

VD=9.6V,Pin=10dBm