J309 / J310 / MM

BFJ309 / M

MB

FJ310 — N

-Channel R

F Am

plifier

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comJ309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1

December 2010

J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures• This device is designed for VHF/UHF amplifier, oscillator and mixer applications. • As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.• Sourced from Process 92.• Source & Drain are interchangeable.

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta = 25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

Symbol Parameter Value UnitsVDS Drain-Source Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Gate Current 10 mA

TJ, Tstg Operating and Storage Junction Temperature Range - 55 to +150 °C

Symbol ParameterMax.

UnitsJ309-J310 *MMBFJ309-310

PDTotal Device DissipationDerate above 25°C

6255.0

3502.8

mWmW/°C

RθJC Thermal Resistance, Junction to Case 127 °C/WRθJA Thermal Resistance, Junction to Ambient 357 556 °C/W

J309 MMBFJ309

SOT-23 Mark MMBFJ309 : 6U

G

D

S

J310 MMBFJ310

MMBFJ310 : 6TGS D

TO-92

J309 / J310 / MM

BFJ309 / M

MB

FJ310 — N

-Channel R

F Am

plifier

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comJ309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 2

Electrical Characteristics Ta = 25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Symbol Parameter Test Condition Min. Typ. Max. UnitsOff CharacteristicsBV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 -25 V

IGSS Gate Reverse Current VGS = -15V, VDS = 0VGS = -15V, VDS = 0, Ta = 125°C

-1.0-1.0

nAμA

VGS(off) Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309 310

-1.0-2.0

-4.0-6.5

VV

On Characteristics IDSS Zero-Gate Voltage Drain

Current*VDS = 10V, VGS = 0 309 310

1224

3060

mAmA

VGS(f) Gate-Source Forward Voltage VDS = 0, IG = 1.0mA 1.0 VSmall Signal Characteristics

Re(yis) Common-Source Input Conductance

VDS = 10V, ID = 10mA, f = 100MHz 309 310

0.70.5

mmhosmmhos

Re(yos) Common-Source OutputConductance

VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos

Gpg Common-Gate Power Gain VDS = 10V, ID = 10mA, f = 100MHz 16 dBRe(yfs) Common-Source Forward

TransconductanceVDS = 10V, ID = 10mA, f = 100MHz 12 mmhos

Re(yig) Common-Gate Input Conductance

VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos

gfs Common-Source ForwardTransconductance

VDS = 10V, ID = 10mA, f = 1.0kHz 309 310

10,0008,000

20,00018,000

μmhosμmhos

goss Common-Source OutputConductance

VDS = 10V, ID = 10mA, f = 1.0kHz 150 μmhos

gfg Common-Gate ForwardConductance

VDS = 10V, ID = 10mA, f = 1.0kHz 309 310

13,00012,000

μmhosμmhos

gog Common-Gate OutputConductance

VDS = 10V, ID = 10mA, f = 1.0kHz 309 310

100150

μmhosμmhos

Cdg Drain-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 2.0 2.5 pFCsg Source-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 4.1 5.0 pFNF Noise Figure VDS = 10V, ID = 10mA, f = 450MHz 3.0 dBen Equivalent Short-Circuit Input

Noise VoltageVDS = 10V, ID = 10mA, f = 100Hz 6.0 nV/ Hz

J309 / J310 / MM

BFJ309 / M

MB

FJ310 — N

-Channel R

F Am

plifier

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comJ309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 3

Typical Performance Characteristics

Transfer Characteristics Transfer Characteristics

Transfer Characteristics

Forward Transadmittance

Transfer Characteristics

Input Admittance

J309 / J310 / MM

BFJ309 / M

MB

FJ310 — N

-Channel R

F Am

plifier

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comJ309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 4

Typical Performance Characteristics (continued)

Capacitance vs. VoltageOutput Admittance

Output Conductance vs.Drain CurrentCommon Drain-Source

Noise Voltage vs. Frequency Reverse Transadmittance

J309 / J310 / MM

BFJ309 / M

MB

FJ310 — N

-Channel R

F Am

plifier

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.comJ309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 5

Typical Performance Characteristics (continued)

Transconductance vs.Drain CurrentParameter Interactions

Leakage Current vs. Voltage

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

100

200

300

400

500

600

700

TEMPERATURE ( C)

P

- P

OW

ER

DIS

SIP

AT

ION

(m

W)

D

o

TO-92

SOT-23

© Fairchild Semiconductor Corporation www.fairchildsemi.com

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Rev. I50