High-Speed Quad SPST CMOS Analog Switch€ Faster Throughput ... low on-resistance (25 Ω) with...

Vishay SiliconixDG201HS

Document Number: 70038S-71241–Rev. G, 25-Jun-07

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High-Speed Quad SPST CMOS Analog Switch

FEATURES • Fast Switching-tON: 38 ns • Low On-Resistance: 25 Ω • Low Leakage: 100 pA • Low Charge Injection • TTL/CMOS Logic Compatible • Single Supply Compatibility • High Current Rating: - 30 mA

BENEFITS • Faster Throughput

• Higher Accuracy • Reduced Pedestal Error

• Upgrades Existing Designs

• Simple Interfacing • Replaces HI201HS, ADG201HS

• Space Savings (TSSOP)

APPLICATIONS • Data Acquisition

• Hi-Rel Systems

• Sample-and-Hold Circuits • Communication Systems

• Automatic Test Equipment

• Integrator Reset Circuits • Choppers

• Gain Switching

• Avionics

DESCRIPTION

The DG201HS is an improved monolithic device containing

four independent analog switches. It is designed to provide

high speed, low error switching of analog signals. Combininglow on-resistance (25 Ω) with high speed (tON: 38 ns), the

DG201HS is ideally suited for high speed data acquisition

requirements.

To achieve high voltage ratings and superior switchingperformance, the DG201HS is built on a proprietaryhigh-voltage silicon-gate process. An epitaxial layerprevents latchup.

Each switch conducts equally well in both directions whenon, and blocks input voltages to the supply values, when off.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

* Pb containing terminations are not RoHS compliant, exemptions may apply

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

Top View

IN1 IN2

D1 D2

S1 S2

V- V+

GND NC

S4 S3

D4 D3

IN4 IN3

Top View

S1 S2

V- V+

NC NC

GND NC

S4 S3

LCC

NC IN3 D3D4 IN4

NC IN2 D2D1 IN1Key

9 10 11 12 13

4

5

6

7

8

123 1920

14

15

16

17

18

Dual-In-Line, SOIC and TSSOP

Logic "0" ≤ 0.8 VLogic "1" ≥ 2.4 V

TRUTH TABLE Logic Switch

0 ON1 OFF

Available

Pb-free

RoHS*COMPLIANT

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Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 6 mW/°C above 75 °C.

d. Derate 12 mW/°C above 75 °C.

e. Derate 7.6 mW/°C above 75 °C.

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

ORDERING INFORMATION Temp Range Package Part Number

- 40 to 85 °C

16-Pin Plastic DIPDG201HSDJ

DG201HSDJ-E3

16-Pin Narrow SOIC

DG201HSDYDG201HSDY-E3DG201HSDY-T1

DG201HSDY-T1-E3

16-Pin TSSOP

DG201HSDQDG201HSDQ-E3DG201HSDQ-T1

DG201HSDQ-T1-E3

ABSOLUTE MAXIMUM RATINGSParameter Limit Unit

V+ to V- 44

VGND to V- 25

Digital Inputsa, VS, VD(V-) - 4 to (V+) + 4 or

30 mA, whichever occurs first

Continuous Current (Any Terminal) 30mA

Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100

Storage Temperature (A Suffix) - 65 to 150

°C(D Suffix) - 65 to 125

Power Dissipation (Package)b

16-Pin Plastic DIPc 470

mW16-Pin CerDIPd 900

16-Pin Narrow Body SOIC and TSSOPe 600

LCC-20d 900

Figure 1.

GND

V-

DX

SX

V+

5 VReg

V+

INX

V-

LevelShift/Drive


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Notes: a.Refer to PROCESS OPTION FLOWCHART.b.Room = 25 °C, Full = as determined by the operating temperature suffix.c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.e.Guaranteed by design, not subject to production test.f. VIN = input voltage to perform proper function.

SPECIFICATIONSa

Parameter Symbol

Test Conditions Unless Specified

V+ = 15 V, V- = - 15 V

VIN = 3 V, 0.8 Vf Tempb Typc

A Suffix - 55 to 125 °C

D Suffix - 40 to 85 °C

Unit Mind Maxd Mind Maxd

Analog Switch

Analog Signal Rangee VANALOG Full V- V+ V- V+ V

Drain-Source On-Resistance

rDS(on)IS = - 10 mA, VD = ± 8.5 VV+ = 13.5 V, V- = - 13.5 V

RoomFull

25 5075

5075

Ω

rDS(on) Match Room 3 %

Switch Off Leakage CurrentIS(off) V+ = 16.5 V, V- = - 16.5 V

VD = ± 15.5 V VS= ± 15.5 V

RoomFull

0.1 - 1- 60

160

- 1- 20

120

nAID(off)RoomFull

0.1 - 1- 60

160

- 1- 20

120

Channel On Leakage Current

ID(on)V+ = 16.5 V, V- = - 16.5 V

VS = VD = ± 15.5 VRoomFull

0.1 - 1- 60

160

- 1- 20

120

Digital ControlInput, High Voltage VINH Full 2.4 2.4

VInput, Low Voltage VINL Full 0.8 0.8

Input Capacitance CIN Full 5 pF

Input Current IINH or IINL VIN under test = 0.8 V, 3 V Full - 1 1 - 1 1 µA

Dynamic Characteristics

Turn-On Time tON RL = 1 kΩ, CL = 35 pFVS = ± 10 V, VINH = 3 V

See Figure 2

RoomFull

48 6075

6075

nsTurn-Off TimetOFF1

RoomFull

30 5070

5070

tOFF2 Room 150

Output Settling Time to 0.1 % ts Room 180

Charge Injection QCL = 1 nF, VS = 0 V

Vgen = 0 V, Rgen = 0 ΩRoom - 5 pC

Off Isolation OIRRRL = 1 kΩ, CL = 10 pF

f = 100 kHz Room 85

dBCrosstalk(Channel-to-Channel)

XTALK

Any Other Channel SwitchesRL = 1 kΩ, CL = 10 pF

f = 100 kHzRoom 100

Source Off Capacitance CS(off)

VS , VD = 0 V, f = 1 MHz

Room 8

pFDrain Off Capacitance CD(off) Room 8

Channel On Capacitance CD(on) Room 30

Drain-to-Source Capacitance

CDS(off) Room 0.5

Power Supplies

Positive Supply Current I+V+ = 15 V, V- = - 15 V

VIN = 0 or 5 V

RoomFull

4.510 10

mANegative Supply Current I-

RoomFull

3.5- 6 - 6

Power Consumptionc PC Full 240 240 mW

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Notes: a.Refer to PROCESS OPTION FLOWCHART.b.Room = 25 °C, Full = as determined by the operating temperature suffix.c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.e.Guaranteed by design, not subject to production test.f. VIN = input voltage to perform proper function.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

SPECIFICATIONSa FOR SINGLE SUPPLY

Parameter Symbol

Test Conditions Unless Specified

V+ = 10.8 V to 16.5 V,

V- = GND = 0 V, VIN = 3 V, 0.8 Vf Tempb Typc

A Suffix - 55 to 125 °C

D Suffix - 40 to 85 °C

Unit Mind Maxd Mind Maxd

Analog Switch

Analog Signal Rangee VANALOG Full 0 V+ 0 V+ V

Drain-Source On-Resistance

rDS(on)IS = - 10 mA, VD = 8.5 V

V+ = 10.8 VRoomFull

6590

12090

120Ω

Switch Off Leakage CurrentIS(off) V+ = 16.5 V

VS= 0.5 V, 10 V VD = 10 V, 0.5 V

RoomFull

0.1- 1

- 601

60- 1

- 201

20

nAID(off)RoomFull

0.1- 1

- 601

60- 1

- 201

20

Channel On Leakage Current

ID(on) + IS(on)V+ = 16.5 V

VD = 0.5 V, 10 VRoomFull

0.1- 1

- 601

60- 1

- 201

20

Digital ControlInput, High Voltage VINH Full 2.4 2.4

VInput, Low Voltage VINL Full 0.8 0.8

Input Capacitance CIN Full 5 pF

Input Current IINH or IINLV+ = 16.5 V

VIN under test = 0.8 V, 3 V Full - 1 1 - 1 1 µA

Dynamic Characteristics

Turn-On Time tON RL = 1 kΩ, CL = 35 pFVS = 2 V, V = 10.8 V

See Figure 2

RoomFull

5070

5070

nsTurn-Off TimetOFF1

RoomFull

5070

5070

tOFF2 Room 150

Output Settling Time to 0.1 % ts Room 180

Charge Injection QCL = 1 nF, VS = 0 V

Vgen = 0 V, Rgen = 0 ΩRoom 10 pC

Off Isolation OIRRRL = 1 kΩ, CL = 10 pF

f = 100 kHz Room 85

dBCrosstalk(Channel-to-Channel)

XTALK

Any Other Channel SwitchesRL = 1 kΩ, CL = 10 pF

f = 100 kHzRoom 100

Source Off Capacitance CS(off)f = 1 MHz

Room 10

pFDrain Off Capacitance CD(off) Room 10

Channel On Capacitance CD(on) VANALOG = 0 V Room 30

Power SupplyPositive Supply Current I+

V+ = 15 V, VIN = 0 or 5 VFull 10 10 mA

Power Consumptionc PC Full 150 150 mW


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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

rDS(on) vs. VD and Power Supply Voltages

rDS(on) vs. VD and Single Power Supply Voltages

Input Switching Threshold vs. Supply Voltage

- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 200

10

20

30

40

50

60

70

± 5 V

VD – Drain Voltage (V)

± 10 V

± 15 V

± 20 V

r DS

(on)

– D

rain

-Sou

rce

On-

Res

ista

nce

(Ω)

0 2 4 6 8 10 12 14 160

20

40

60

80

100

120

140

160

180


V+ = 5 V

7 V

10 V

12 V15 V

r DS

(on)

– D

rain

-Sou

rce

On-

Res

ista

nce

(Ω)

0

0.5

1

1.5

2

2.5

V

(

V)

TH

Positive Supplies (V)

4 6 8 10 12 14 16 18 20

rDS(on) vs. VD and Temperature

Leakage Currents vs. Temperature

Switching Time vs. Power Supply Voltage

0

10

20

30

40

50

- 15 - 10 - 5 0 5 10 15


125 °C

85 °C

- 55 °C

0 °C

V+ = 15 VV- = - 15 V

r DS

(on)

– D

rain

-Sou

rce

On-

Res

ista

nce

(Ω)

25 °C

- 60 - 40 - 20 0 20 40 60 80 100 120 14010 pA

100 pA

1 nA

10 nA

ID(on)

Leak

age

Temperature (°C)

IS(off), ID(off)

30

35

40

45

50

55

± 4 ± 6 ± 8 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20

Supply Voltage (V)

Sw

itchi

ng T

ime

(ns)

tON

tOFF

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Switching Times vs. Temperature

Switching Times vs. Temperature

- 55 - 25 0 25 50 75 100 12520

25

30

35

40

45

Temperature (°C)

Sw

itchi

ng T

ime

(ns)

tON

tOFF

V+ = 15 VV- = - 15 V

- 55 - 25 0 25 50 75 100 125

20

25

30

35

40

45

50

Temperature (°C)

Sw

itchi

ng T

ime

(ns)

V+ = 10.8 VV- = 0 V

tON

tOFF

Switching Times vs. Power Supply Voltage

Charge Injection vs. Source Voltage

4 6 8 10 12 14 16 18 2030

35

40

45

50

55

60

65

V+ – Positive Supply (V)

(ns)

t ON,

t OF

F

tON

tOFF

- 15 - 10 - 5 0 5 10 15

- 40

- 30

- 20

- 10

0

10

20

VS – Source Voltage (V)

V+ = 15 V, V- = 0 V

V+ = 15 VV- = - 15 V

Cha

rgie

Inje

ctio

n (p

C)

Off Isolation vs. Frequency

10 k 100 k 1 M 10 M

40

50

60

70

80

90

100

110

120

f – Frequency (Hz)

OIR

R

RL = 100 Ω

V+ = 15 VV- = - 15 V

RL = 1 kΩ


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TEST CIRCUITS

Figure 2. Switching Time

10 %90 %

± 10 V

RL

RL + rDS(on)

VO = VS

CL (includes fixture and stray capacitance)

V-

V+

IN

S

CL35 pF

D

3 V RL1 kΩ

VO

- 15 V

GND

+ 15 V

50 %0 V

3 V

tOFF1

tON

VO

VS

tr < 20 nstf < 20 ns

LogicInput

SwitchInput

SwitchOutput

tOFF2

Figure 3. Charge Injection

CL1 nF3 V

V-

- 15 V

VO

GND

V+Rg

S D

IN

+ 15 V

ΔVOVO

INX

SWON OFF

Q = ΔVO x CL

Figure 4. Off Isolation

S

INRL

D

Rg = 50 Ω

VSVO

0 V, 3 V

Off Isolation = 20 logVS

VO

V+

- 15 V

GND V- C

C

+ 15 V

Figure 5. Crosstalk

50 Ω

D1

VO

Rg = 50 Ω

S1

+ 15 V

- 15 V

D2

GND

V+

V-

NC

C

C

S2

RL

IN1

XTALK Isolation = 20 logVS

VO

0 V, 3 V

0 V, 3 V

VS

IN2

C = RF bypass

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APPLICATIONSA high-speed, low-glitch analog switch such as Vishay Siliconix’s DG201HS improves the accuracy and shortens the acquisitionand settling times of a sample-and-hold circuit.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see http://www.vishay.com/ppg?70038.

VANALOG

InputBuffer

Si581

SAMPLE/HOLD

CH(Polystyrene)

JFET Buffer

OUTPUTto A/D Converter

DG201HS

Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1

Disclaimer

Legal Disclaimer NoticeVishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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