Experiment
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Experiment • Fig. 1. Schematic diagrams of the LEDs fabricated in this study. 2 sampl e Thickness LEDA 12nm LEDB 4nm LEDC 8nm
description
Experiment. Fig. 1. Schematic diagrams of the LEDs fabricated in this study. Results and Discussion. Shockley-Read -Hall Fig. 2. EQEs and forward voltages of InGaN / GaN LEDs featuring quantum barriers of various thicknesses, plotted with respect to the current density. - PowerPoint PPT Presentation
Transcript of Experiment
Experiment
• Fig. 1. Schematic diagrams of the LEDs fabricated in this study.
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sample ThicknessLEDA 12nmLEDB 4nmLEDC 8nm
Results and Discussion
Shockley-Read -Hall• Fig. 2. EQEs and forward voltages of InGaN/GaN LEDs featuring quantum barriers of various
thicknesses, plotted with respect to the current density.
Thickness resistances
12nm 4.24 Ω
8nm 3.82 Ω
4nm 3.14 Ω
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• Fig. 3. Simulated distributions of (a) hole concentration and (b) recombination rate for the LEDs with different barrier thicknesses.
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