13

TAB

2

DPAK

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

FeaturesOrder code VDS RDS(on) max. ID

STD14NM50NAG 500 V 0.320 Ω 12 A

• AEC-Q101 qualified • 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance

Applications• Switching applications

DescriptionThis device is an N-channel Power MOSFET developed using the second generationof MDmesh™ technology. This revolutionary Power MOSFET associates a verticalstructure to the company’s strip layout to yield one of the world’s lowest on-resistanceand gate charge. It is therefore suitable for the most demanding high efficiencyconverters.

Product status

STD14NM50NAG

Product summary

Order code STD14NM50NAG

Marking 14NM50N

Package DPAK

Packing Tape and reel

Automotive-grade N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package

STD14NM50NAG

Datasheet

DS12786 - Rev 2 - March 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 500 V

VGS Gate-source voltage ±25 V

ID Drain current (continuous) at TC = 25 °C 12 A

ID Drain current (continuous) at TC = 100 °C 8 A

IDM (1) Drain current (pulsed) 48 A

PTOT Total power dissipation at TC = 25 °C 90 W

dv/dt (2) Peak diode recovery voltage slope 15 V/ns

Tj Operating junction temperature range-55 to 150 °C

Tstg Storage temperature range

1. Pulse width limited by safe operating area.2. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1.39 °C/W

Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W

1. When mounted on 1inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IARAvalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)4 A

EASSingle pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 50 V)172 mJ

STD14NM50NAGElectrical ratings

DS12786 - Rev 2 page 2/16

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-sourcebreakdown voltage ID = 1 mA, VGS = 0 V 500 V

IDSS Zero gate voltage drain currentVGS = 0 V, VDS = 500 V 1 µA

VGS = 0 V, VDS = 500 V, TC = 125 °C (1) 100 µA

IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on)Static drain-source onresistance VGS = 10 V, ID = 6 A 0.285 0.320 Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0 V -

816

- pFCoss Output capacitance 60

Crss Reverse transfer capacitance 3

Coss eq. (1) Equivalent output capacitance VDS = 0 to 400 V, VGS = 0 V - 308 - pF

RG Intrinsic gate resistance f = 1 MHz, ID= 0 A 4.5 Ω

Qg Total gate chargeVDD = 400 V, ID = 12 A, VGS = 0 to 10 V(see Figure 13. Test circuit for gatecharge behavior)

-

27

- nCQgs Gate-source charge 5

Qgd Gate-drain charge 15

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 250 V, ID = 6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for resistiveload switching times andFigure 17. Switching time waveform)

-

12

- nstr Rise time 16

td(off) Turn-off delay time 42

tf Fall time 22

STD14NM50NAGElectrical characteristics

DS12786 - Rev 2 page 3/16

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current-

12A

ISDM (1) Source-drain current (pulsed) 48

VSD (2) Forward on voltage ISD = 12 A, VGS = 0 V - 1.6 V

trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 14. Test circuitfor inductive load switching and dioderecovery times)

-

252 ns

Qrr Reverse recovery charge 2.8 μC

IRRM Reverse recovery current 22 A

trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs

VDD = 60 V, TJ = 150 °C (seeFigure 14. Test circuit for inductive loadswitching and diode recovery times)

-

300 ns

Qrr Reverse recovery charge 3.3 μC

IRRM Reverse recovery current 22.2 A

1. Pulse width limited by safe operating area.2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

STD14NM50NAGElectrical characteristics

DS12786 - Rev 2 page 4/16

2.1 Electrical characteristics curves

Figure 1. Safe operating area

ID

101

10

0.1-1

VDS(V)

(A)

Operat

ion in

this

area i

s

Limite

d by m

ax RDS(

on)

10µs

100µs

1ms

10msTj=150°CTc=25°CSingle pulse

0.1-1 10 101 102

AM07200v1

Figure 2. Thermal impedance

GC20460

100

10-1

10-2

10-5 10-4 10-3 10-2 10-1

K

tp (s)

Figure 3. Output characterisics

ID

15

10

5

00 10 VDS(V)20

(A)

5 15

20

25

5V

6V

VGS=10V

AM07202v1

Figure 4. Transfer characteristics

ID

15

10

5

00 4 VGS(V)8

(A)

2 6 10

20

25VDS=18V

AM07203v1

Figure 5. Static drain-source on-resistance

RDS(on)

0.280

0.275

0.270

0.2650 4 ID(A)

(Ohm)

2 6

0.285

0.290

0.295

0.300VGS=10V

8 10 12

AM07205v1

Figure 6. Gate charge vs gate-source voltage

VGS

6

4

2

00 5 Qg(nC)

(V)

20

8

10 15

10

VDD=400V

ID=12A

25

12

300

250

200

0

350

400

VDS

30

150

100

50

VDS(V)

AM07204v1

STD14NM50NAGElectrical characteristics curves

DS12786 - Rev 2 page 5/16

Figure 7. Capacitance variations

C

1000

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

AM07206v1

Figure 8. Normalized gate threshold voltage vstemperature

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

ID=250µAAM07208v1

Figure 9. Normalized on-resistance vs temperature

RDS(on)

1.7

1.3

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

2.1ID=6A

VGS=10 V

AM07209v1

Figure 10. Source-drain diode forward characteristic

VSD

0.6

0.4

0.2

00 2 ISD(A)

(V)

1

0.8

53 4 6

TJ= -50 °C

TJ= 150 °C

TJ= 25 °C

7 8 9 10 11

1

1.2

1.4

AM15616v1

Figure 11. Normalized V(BR)DSS vs temperature

V(BR)DSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.920.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA

1.08

1.10

AM09028v1

STD14NM50NAGElectrical characteristics curves

DS12786 - Rev 2 page 6/16

3 Test circuits

Figure 12. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 13. Test circuit for gate charge behavior

AM01469v1

47 kΩ1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST100 Ω

100 nF

D.U.T.

+pulse width

VGS

2200μF

VG

VDD

Figure 14. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 15. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 16. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 17. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

STD14NM50NAGTest circuits

DS12786 - Rev 2 page 7/16

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

STD14NM50NAGPackage information

DS12786 - Rev 2 page 8/16

4.1 DPAK (TO-252) type A2 package information

Figure 18. DPAK (TO-252) type A2 package outline

0068772_type-A2_rev26

STD14NM50NAGDPAK (TO-252) type A2 package information

DS12786 - Rev 2 page 9/16

Table 8. DPAK (TO-252) type A2 mechanical data

Dim.mm

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 4.95 5.10 5.25

E 6.40 6.60

E1 5.10 5.20 5.30

e 2.159 2.286 2.413

e1 4.445 4.572 4.699

H 9.35 10.10

L 1.00 1.50

L1 2.60 2.80 3.00

L2 0.65 0.80 0.95

L4 0.60 1.00

R 0.20

V2 0° 8°

STD14NM50NAGDPAK (TO-252) type A2 package information

DS12786 - Rev 2 page 10/16

Figure 19. DPAK (TO-252) recommended footprint (dimensions are in mm)

FP_0068772_rev26

STD14NM50NAGDPAK (TO-252) type A2 package information

DS12786 - Rev 2 page 11/16

4.2 DPAK (TO-252) packing information

Figure 20. DPAK (TO-252) tape outline

P1A0 D1

P0

FW

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. onlyincluding draft andradii concentric around B0

AM08852v1

Top covertape

STD14NM50NAGDPAK (TO-252) packing information

DS12786 - Rev 2 page 12/16

Figure 21. DPAK (TO-252) reel outline

A

D

B

Full radius

Tape slot in core for tape start

2.5mm min.width

G measured at hub

C

N

40mm min. access hole at slot location

T

AM06038v1

Table 9. DPAK (TO-252) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

STD14NM50NAGDPAK (TO-252) packing information

DS12786 - Rev 2 page 13/16

Revision history

Table 10. Document revision history

Date Version Changes

15-Oct-2018 1 Initial release. The document status is production data.

04-Mar-2019 2 Updated Section Device summary.

STD14NM50NAG

DS12786 - Rev 2 page 14/16

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.2 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STD14NM50NAGContents

DS12786 - Rev 2 page 15/16

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

STD14NM50NAG

DS12786 - Rev 2 page 16/16