BUZ 338. SIPMOS Power Transistor. • N Channel

Semiconductor Group 1 07/96

BUZ 338

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on ) Package Ordering Code

BUZ 338 500 V 13.5 A 0.4 Ω TO-218 AA C67078-S3126-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current

TC = 28 °C

ID 13.5

A

Pulsed drain current

TC = 25 °C

IDpuls

54

Avalanche current,limited by Tjmax IAR 13.5

Avalanche energy,periodic limited by Tjmax EAR 18 mJ

Avalanche energy, single pulse

ID = 13.5 A, VDD = 50 V, RGS = 25 Ω

L = 9.18 mH, Tj = 25 °C

EAS

930

Gate source voltage VGS ± 20 V

Power dissipation

TC = 25 °C

Ptot

180

W

Operating temperature Tj -55 ... + 150 °C

Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case RthJC ≤ 0.7 K/W

Thermal resistance, chip to ambient RthJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56


BUZ 338

Electrical Characteristics, at Tj = 25°C, unless otherwise specified


min. typ. max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

500 - -

V

Gate threshold voltage

VGS=VDS, ID = 1 mA

VGS(th)

2.1 3 4

Zero gate voltage drain current

VDS = 500 V, VGS = 0 V, Tj = 25 °C

VDS = 500 V, VGS = 0 V, Tj = 125 °C

IDSS

-

-

10

0.1

100

1

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

- 10 100

nA

Drain-Source on-resistance

VGS = 10 V, ID = 8.5 A

RDS(on)

- 0.3 0.4

Ω


BUZ 338



min. typ. max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A

gfs

8 15 -

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

- 2500 3325

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

- 320 480

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

- 120 180

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RGS = 50 Ω

td(on)

- 40 60

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RGS = 50 Ω

tr

- 100 150

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RGS = 50 Ω

td(off)

- 450 600

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RGS = 50 Ω

tf

- 120 160


BUZ 338



min. typ. max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

IS- - 13.5

A

Inverse diode direct current,pulsed

TC = 25 °C

ISM

- - 54

Inverse diode forward voltage

VGS = 0 V, IF = 27 A

VSD

- 1.1 1.6

V

Reverse recovery time

VR = 100 V, IF=lS, diF/dt = 100 A/µs

trr- 400 -

ns

Reverse recovery charge

VR = 100 V, IF=lS, diF/dt = 100 A/µs

Qrr

- 6.2 -

µC

5 07/96Semiconductor Group

BUZ 338

Drain current ID = ƒ(TC)

parameter: VGS ≥ 10 V

0 20 40 60 80 100 120 °C 160TC

0 1

2

3

4

5

6

7

8

9

10

11

12

A

14

ID

Power dissipation Ptot = ƒ(TC)

0 20 40 60 80 100 120 °C 160TC

0

20

40

60

80

100

120

140

160

W

190

Ptot

Safe operating area ID = ƒ(VDS)

parameter: D = 0.01, TC = 25°C

-1 10

0 10

1 10

2 10

A

ID

10 0 10 1 10 2 10 3 V VDS

R DS(on

) =

V DS

/

I D

DC

10 ms

1 ms

100 µs

10 µs

tp = 6.8µs

Transient thermal impedance Zth JC = ƒ(tp)

parameter: D = tp / T

-3 10

-2 10

-1 10

0 10

K/W

ZthJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50


BUZ 338

Typ. output characteristics ID = ƒ(VDS)

parameter: tp = 80 µs

0 4 8 12 16 20 V 28VDS

0 2

4

6

8

10

12

14

16

18

20

22

24

26

A

30

ID

VGS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0

lPtot = 180W

l 20.0

Typ. drain-source on-resistance RDS (on) = ƒ(ID)

parameter: VGS

0 4 8 12 16 20 A 28ID

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ω

1.3

RDS (on)

VGS [V] = a4.0

VGS [V] =

a

a4.5

b

b5.0

c

c5.5

d

d6.0

e

e6.5

f

f7.0

g

g7.5

h

h8.0

i

i9.0

j

j10.0

k

k20.0

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µsVDS≥2 x ID x RDS(on)max

0 1 2 3 4 5 6 7 8 V 10VGS

0 1

2

3

4

5

6

7

8

9

10

11

12

13

A

15

ID

Typ. forward transconductance gfs = f (ID)parameter: tp = 80 µs,VDS≥2 x ID x RDS(on)max

0 2 4 6 8 10 A 14ID

0

2

4

6

8

10

12

14

16

S

20

gfs

7 07/96Semiconductor Group

BUZ 338

Gate threshold voltage VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

VGS(th)

-60 -20 20 60 100 °C 160Tj

2%

typ

98%

Drain-source on-resistance RDS (on) = ƒ(Tj)

parameter: ID = 8.5 A, VGS = 10 V

-60 -20 20 60 100 °C 160Tj

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Ω

1.7

RDS (on)

typ

98%

Typ. capacitances

C = f (VDS)parameter:VGS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40VDS

-2 10

-1 10

0 10

1 10

nF

C

Crss

Coss

Ciss

Forward characteristics of reverse diode IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

-1 10

0 10

1 10

2 10

A

IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0VSD

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)


BUZ 338

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 13.5 A, VDD = 50 V

RGS = 25 Ω, L = 9.18 mH

20 40 60 80 100 120 °C 160Tj

0

100

200

300

400

500

600

700

800

mJ

1000

EAS

Typ. gate charge VGS = ƒ(QGate)

parameter: ID puls = 20 A

0 20 40 60 80 100 120 140 160 nC 190QGate

0

2

4

6

8

10

12

V

16

VGS

DS maxV0,8

DS maxV0,2

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)

-60 -20 20 60 100 °C 160Tj

450 460

470

480

490

500

510

520

530

540

550

560

570

580

V

600

V(BR)DSS


BUZ 338

Package OutlinesTO-218 AADimension in mm

This datasheet has been download from:

www.datasheetcatalog.com

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http://www.datasheetcatalog.com



BUZ 338. SIPMOS Power Transistor. • N Channel

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