Basikes Eksisoseis Hlektronikhs 3-2013
description
Transcript of Basikes Eksisoseis Hlektronikhs 3-2013
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I M 2013
N-MOS
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(BJT) ( rx rbb, r rbe re rd )
V: Early, VT = kT/q: (~25mV =290K)
MOS
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BJT
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n : 121 = n
onL
. n fLj , j = 1,., n : 22221 .....1.1 LnLLnL ffff +++
n : 121 = nonH . n fj, j = 1,., n:22
22
1
1.....111.1
1
HnHH
nH
fff
f+++
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( ):
( ):
MOS :
CC t < Z , P2
( )421 dsdsmv rrgA = 222 1111 biasoxpDoxpmI
LWCI
LWCg
=
=
)(g PSRR mN oNoP rr= maxdtdVSR out
L
SS
CI=
c
m
cIIImIIImmv C
gCRRg
RRggpAGB 12
2111)()0( =
==
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45 z 10 GB: p2 1.22GB 60 z 10 GB: p2 2.22GB
MOS n-MOS
p-MOS:
Lc CC 22.0>
)/1(1
2 =
RgC mc
cCISR 5= ( )425
1
42
11
2 +
=+=
Ig
gggA m
dsds
mv )( 766
6
76
62 +
=+=
Ig
gggA m
dsds
mv
c
m
CgGB 1=
L
m
Cgp 62
=c
m
Cg 6=
)(5(max)011
5(min) satDSssin VV
IVV +++= DS
satDSIV 2)( =(min)01(max)03
3
5(max) += VVIVV DDin
cCSRI =5 [ ]20103'3 533 (min)(max)(max))()/( +== VVVVKILWS
inDD
GBCg
gs
m 102 3
3 >5
'2
22
211 IKgSSCGBg mcm ===
( ) ( ) ( ) mVVIVVsatV SSinDS 100maxmin 011
55 = [ ]25'5
55
2satVK
ISDS
=
( )cLmm CCgg /2.2 26 =4
646
m
m
ggSS =
6'6
26
6 2 SKgI m=
( ) ( ) ( )maxmin 666 outDDDSDSDS VVsatVVV ===( )satVKgSDS
m
6'6
66 = ( ) 5567 / SIIS =
( ) ( )766425622
++= IIggA mmv
( )( )SSDDdiss VVIIP ++= 65
(max)01)(51
5(max) = VVIVV satSDDDin (min)01(max)033
5(min) ++= VVIVV ssin
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Widlar:
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RIRIP mDCDC 22
2
== RIRIP mrmsAC 4
22 == %6.40%100 ==
AC
DC
PPn %121%100
22
==DC
DCrms
III
r
RIRIP mDCDC 22
2 4== R
IRIP mrmsAC 2
22 == %2.81%100 ==
AC
DC
PPn %48%100
22
==DC
DCrms
III
r
fCRVV
VV
rDC
r
DC
rmsAC
321
32)( ==
fCRVV
VV
rDC
r
DC
rmsAC
341
32)( ==
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1 ( sin ) ( )2d sm s B s
a
I V t V d tR
= )/(sin 1 smB VV= a < <
1 sin( ) ( ) (1 cos )f smda sm s sa
VV V t d t a
= = +
21 sin( ) ( ) cos cosa
f fsmda sm s s do
a
VV V t d t a V a
+= = =
aIVIVIVP dsmdf
dasss cos2cos 11 ===aI
IPFs
s cos22cos 11 ==
acoscos 1 =