This is information on a product in full production.

May 2015 DocID027030 Rev 2 1/16

STD85N10F7AG

Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A STripFET™ F7 Power MOSFET in a DPAK package

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Designed for automotive applications and AEC-Q101 qualified

• Among the lowest RDS(on) on the market

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications• Switching applications

DescriptionThis N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

DPAK

1

3

TAB

Order code VDS RDS(on)

maxID PTOT

STD85N10F7AG 100 V 0.010 Ω 70 A 85 W

Table 1. Device summary

Order code Marking Package Packing

STD85N10F7AG 85N10F7 DPAK Tape and reel

www.st.com

Contents STD85N10F7AG

2/16 DocID027030 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . 10

4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

DocID027030 Rev 2 3/16

STD85N10F7AG Electrical ratings

16

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 100 V

VGS Gate-source voltage ± 20 V

IDDrain current (continuous) at TC = 25 °C 70

ADrain current (continuous) at TC = 100 °C 48

IDM (1)

1. Pulse width limited by safe operating area.

Drain current (pulsed) 280 A

PTOT Total dissipation at TC = 25 °C 85 W

Tstg Storage temperature- 55 to 175 °C

Tj Max. operating junction temperature

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-pcb Thermal resistance junction-pcb max 50°C/W

Rthj-case Thermal resistance junction-case max 1.76

Electrical characteristics STD85N10F7AG

4/16 DocID027030 Rev 2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 250 µA, VGS = 0 100 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = 100 V 1µA

VDS = 100 V, TC=125 °C 100

IGSSGate-body leakage

current (VDS = 0)VGS = 20 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 3.5 4.5 V

RDS(on)Static drain-source on-resistance

ID = 40 A, VGS=10 V 0.0085 0.010 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

- 3100 -

pFCoss Output capacitance - 700 -

CrssReverse transfer capacitance

- 45 -

Qg Total gate charge VDD = 50 V, ID = 70 A,VGS = 10 V(see Figure 14)

- 45 -

nCQgs Gate-source charge - 18 -

Qgd Gate-drain charge - 13 -

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 50 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V

(see Figure 15 and Figure 18)

- 19 -

nstr Rise time - 32 -

td(off) Turn-off delay time - 36 -

tf Fall time - 13 -

DocID027030 Rev 2 5/16

STD85N10F7AG Electrical characteristics

16

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 70 A

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed) - 280 A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 70 A, VGS = 0 - 1.1 V

trr Reverse recovery time ISD = 70 A, di/dt = 100 A/µsVDD = 80 V, Tj=150 °C (see Figure 18)

- 70 ns

Qrr Reverse recovery charge - 125 nC

IRRM Reverse recovery current - 3.6 A

Electrical characteristics STD85N10F7AG

6/16 DocID027030 Rev 2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

100µs

1msTj=175°CTc=25°C

Sinlgepulse

10ms

GIPD220720131539FSR

Single pulse

δ=0.5

0.050.020.01

0.10.2

K

10 tp(s)-4 10-3

10-1

10-510-2

10-2 10-1 100

c

AM18025v1

Figure 4. Output characteristics Figure 5. Transfer characteristics

ID

300

200

100

00 4 VDS(V)8

(A)

2 6

5V

250

150

50

6V

7V

8V

9V

VGS=10 V

AM15971v1ID

300

200

100

04 VGS(V)8

(A)

2 6

50

150

250

VDS=9V

10

AM15972v1

Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage

RDS(on)

8.1

7.9

7.7

7.50 80 ID(A)

(mΩ)

40

8.3

8.5

VGS=10V

20 60

8.7

8.9

9.1

AM18070v1 VGS

6

4

2

00 10 Qg(nC)

(V)

40

8

20 30

10

VDD=50VID=70A12

50

AM15974v1

DocID027030 Rev 2 7/16

STD85N10F7AG Electrical characteristics

16

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature

C

1500

1000

500

00 40 VDS(V)

(pF)

20

2000

60

Ciss

CossCrss

80

2500

3000

3500

AM15975v1 VGS(th)

0.8

0.6

0.4

0.2

-55 -5 TJ(°C)

(norm)

-30

1

7020 45 95

ID=250µA

0120

1.2

AM15976v1

Figure 10. Normalized on-resistance vs temperature

Figure 11. Source-drain diode forward characteristics

Figure 12. Normalized VDS vs temperature

RDS(on)

0.5

0TJ(°C)

(norm)

ID=40A

1

-55 -5-30 7020 45 95 120

1.5

2VGS=10V

AM15977v1 VSD

0 40 ISD(A)

(V)

20 60 80

0.6

0.7

0.8

0.9

TJ=-55°C

TJ=150°C

TJ=25°C

0.5

1

1.1

AM15978v1

VDS

TJ(°C)

(norm)

0.96

0.97

0.98

0.99

1

ID=1mA

-55 -5-30 7020 45 95 120

1.01

1.02

1.03

1.04

AM15979v1

Test circuits STD85N10F7AG

8/16 DocID027030 Rev 2

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID027030 Rev 2 9/16

STD85N10F7AG Package information

16

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Package information STD85N10F7AG

10/16 DocID027030 Rev 2

4.1 DPAK (TO-252) type A2 package information

Figure 19. DPAK (TO-252) type A2 package outline

DocID027030 Rev 2 11/16

STD85N10F7AG Package information

16

Table 8. DPAK (TO-252) type A2 mechanical data

Dim.mm

Min. Typ. Max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 4.95 5.10 5.25

E 6.40 6.60

E1 5.10 5.20 5.30

e 2.16 2.28 2.40

e1 4.40 4.60

H 9.35 10.10

L 1.00 1.50

L1 2.60 2.80 3.00

L2 0.65 0.80 0.95

L4 0.60 1.00

R 0.20

V2 0° 8°

Package information STD85N10F7AG

12/16 DocID027030 Rev 2

Figure 20. DPAK (TO-252) recommended footprint (a)

a. All dimensions are in millimeters

DocID027030 Rev 2 13/16

STD85N10F7AG Package information

16

4.2 Packing information

Figure 21. Tape outline

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. onlyincluding draft andradii concentric around B0

AM08852v1

Top covertape

Package information STD85N10F7AG

14/16 DocID027030 Rev 2

Figure 22. Reel outline

Table 9. DPAK (TO-252) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 6.8 7 A 330

B0 10.4 10.6 B 1.5

B1 12.1 C 12.8 13.2

D 1.5 1.6 D 20.2

D1 1.5 G 16.4 18.4

E 1.65 1.85 N 50

F 7.4 7.6 T 22.4

K0 2.55 2.75

P0 3.9 4.1 Base qty. 2500

P1 7.9 8.1 Bulk qty. 2500

P2 1.9 2.1

R 40

T 0.25 0.35

W 15.7 16.3

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

DocID027030 Rev 2 15/16

STD85N10F7AG Revision history

16

5 Revision history

Table 10. Document revision history

Date Revision Changes

21-Oct-2014 1 First release.

26-May-2015 2Text and formatting edits throughout document.Promoted document from “preliminary data” to “production data”Updated device package information.

STD85N10F7AG

16/16 DocID027030 Rev 2

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