This is information on a product in full production.

February 2013 Doc ID 18313 Rev 5 1/13

13

STW48NM60N

N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET

in a TO-247 package

Datasheet — production data

Features

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Applications■ Switching applications

DescriptionThis device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Figure 1. Internal schematic diagram

Order codesVDSS @ TJmax

RDS(on) max

ID

STW48NM60N 650 V < 0.07 Ω 44 A

TO-247

1

2

3

Table 1. Device summary

Order code Marking Package Packaging

STW48NM60N 48NM60N TO-247 Tube

www.st.com

Contents STW48NM60N

2/13 Doc ID 18313 Rev 5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

STW48NM60N Electrical ratings

Doc ID 18313 Rev 5 3/13

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS

Drain-source voltage 600 V

VGS

Gate-source voltage ± 25 V

ID

Drain current (continuous) at TC

= 25 °C 44 A

ID

Drain current (continuous) at TC

= 100 °C 28 A

IDM

(1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 176 A

PTOT

Total dissipation at TC

= 25 °C 330 W

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

8 A

EAS

Single pulse avalanche energy

(starting TJ=25 °C, I

D=I

AS, V

DD=50 V)

457 mJ

dv/dt (2)

2. ISD

≤ 44 A, di/dt ≤ 400 A/μs, VDS

peak ≤ V(BR)DSS

, VDD = 80% V(BR)DSS

.

Peak diode recovery voltage slope 15 V/ns

Tstg

Storage temperature - 55 to 150 °C

Tj

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case

Thermal resistance junction-case max 0.38 °C/W

Rthj-amb

Thermal resistance junction-ambient max 50 °C/W

Tl

Maximum lead temperature for soldering

purpose

300 °C

Electrical characteristics STW48NM60N

4/13 Doc ID 18313 Rev 5

2 Electrical characteristics

(TCASE

= 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS

= 0)

ID

= 1 mA 600 V

IDSS

Zero gate voltage

drain current (VGS

= 0)

VDS

= 600 V

VDS

= 600 V, Tc=125 °C

1

100

μA

μA

IGSS

Gate-body leakage

current (VDS

= 0)

VGS

= ± 25 V ±100 nA

VGS(th)

Gate threshold voltage VDS

= VGS

, ID

= 250 μA 2 3 4 V

RDS(on)

Static drain-source on-

resistance

VGS

= 10 V, ID

= 20 A 0.055 0.07 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS

= 50 V, f = 1 MHz,

VGS

= 0

-

4285

212

9.5

-

pF

pF

pF

Coss eq.

(1)

1. Coss eq.

is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS

= 0, VDS

= 0 to 480 V - 600 - pF

Rg

Intrinsic gate resistance f = 1 MHz, VGS

= 0 1.6 Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD

= 480 V, ID

= 44 A,

VGS

= 10 V,

(see Figure 15)-

124

20

61.5

-

nC

nC

nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD

= 300 V, ID

= 20 A

RG

= 4.7 Ω VGS

= 10 V

(see Figure 14)-

99

18

214

25.5

-

ns

ns

ns

ns

STW48NM60N Electrical characteristics

Doc ID 18313 Rev 5 5/13

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM

(1)

1. Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

44

176

A

A

VSD

(2)

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage ISD

= 44 A, VGS

= 0 - 1.6 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD

= 44 A, di/dt = 100 A/μs

VDD

= 100 V

(see Figure 16)

-

472

10.5

44.5

ns

μC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD

= 44 A, di/dt = 100 A/μs

VDD

= 100 V, Tj = 150 °C

(see Figure 16)-

568

14

50

ns

μC

A

Electrical characteristics STW48NM60N

6/13 Doc ID 18313 Rev 5

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

100µs

1ms

10ms

Tj=150°CTc=25°CSingle pulse

AM09091v1

ID

60

40

20

00 10 VDS(V)20

(A)

5 15

80

100

5V

6V

7VVGS=10V

AM09092v1ID

60

40

20

00 4 VGS(V)8

(A)

2 6 10

80

100VDS=19V

AM09093v1

VDS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.920.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA

1.08

1.10

AM09028v1RDS(on)

0.054

0.053

0.052

0.0510 20 ID(A)

(Ω)

10 35

0.055

0.056

0.057

0.058VGS=10V

15 25 30 405

AM09095v1

STW48NM60N Electrical characteristics

Doc ID 18313 Rev 5 7/13

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Output capacitance stored energy Figure 11. Normalized gate threshold voltage vs temperature

Figure 12. Source-drain diode forward characteristics

Figure 13. Normalized on-resistance vs temperature

VGS

6

4

2

00 20 Qg(nC)

(V)

80

8

40 60

10

VDD=480VID=44A

100

12

300

200

100

0

400

500VDS

120 140

AM09096v1 C

1000

100

10

10.1 10 VDS(V)

(pF)

1

10000

100

Ciss

Coss

Crss

AM09097v1

Eoss

4

00 100 VDS(V)

(µJ)

400200 300

8

500 600

12

16

20

24

AM15357v1 VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

ID=250µA

125

AM09098v1

VSD

0 20 ISD(A)

(V)

10 30 400

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

5 15 25 35

1.4

AM09100v1RDS(on)

1.3

1.1

0.9

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100 125

0.7

1.9

1.7

1.5

2.1 ID=20A

AM09099v1

Test circuits STW48NM60N

8/13 Doc ID 18313 Rev 5

3 Test circuits

Figure 14. Switching times test circuit for resistive load

Figure 15. Gate charge test circuit

Figure 16. Test circuit for inductive load switching and diode recovery times

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

STW48NM60N Package mechanical data

Doc ID 18313 Rev 5 9/13

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

Package mechanical data STW48NM60N

10/13 Doc ID 18313 Rev 5

Table 8. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

STW48NM60N Package mechanical data

Doc ID 18313 Rev 5 11/13

Figure 20. TO-247 drawing

0075325_G

Revision history STW48NM60N

12/13 Doc ID 18313 Rev 5

5 Revision history

Table 9. Document revision history

Date Revision Changes

06-Dec-2010 1 First release.

15-Apr-2011 2 Document status promoted from preliminary data to datasheet.

04-Jul-2011 3 Updated Figure 7.

10-Oct-2012 4

– Modified: Figure 2– Added: Figure 10

– Updated: Section 4: Package mechanical data

19-Feb-2013 5 Updated Table 7: Source drain diode.

STW48NM60N

Doc ID 18313 Rev 5 13/13

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