This is information on a product in full production.
February 2013 Doc ID 18313 Rev 5 1/13
13
STW48NM60N
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET
in a TO-247 package
Datasheet — production data
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications■ Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Order codesVDSS @ TJmax
RDS(on) max
ID
STW48NM60N 650 V < 0.07 Ω 44 A
TO-247
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
STW48NM60N 48NM60N TO-247 Tube
www.st.com
Contents STW48NM60N
2/13 Doc ID 18313 Rev 5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW48NM60N Electrical ratings
Doc ID 18313 Rev 5 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS
Drain-source voltage 600 V
VGS
Gate-source voltage ± 25 V
ID
Drain current (continuous) at TC
= 25 °C 44 A
ID
Drain current (continuous) at TC
= 100 °C 28 A
IDM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 176 A
PTOT
Total dissipation at TC
= 25 °C 330 W
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
8 A
EAS
Single pulse avalanche energy
(starting TJ=25 °C, I
D=I
AS, V
DD=50 V)
457 mJ
dv/dt (2)
2. ISD
≤ 44 A, di/dt ≤ 400 A/μs, VDS
peak ≤ V(BR)DSS
, VDD = 80% V(BR)DSS
.
Peak diode recovery voltage slope 15 V/ns
Tstg
Storage temperature - 55 to 150 °C
Tj
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case
Thermal resistance junction-case max 0.38 °C/W
Rthj-amb
Thermal resistance junction-ambient max 50 °C/W
Tl
Maximum lead temperature for soldering
purpose
300 °C
Electrical characteristics STW48NM60N
4/13 Doc ID 18313 Rev 5
2 Electrical characteristics
(TCASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS
= 0)
ID
= 1 mA 600 V
IDSS
Zero gate voltage
drain current (VGS
= 0)
VDS
= 600 V
VDS
= 600 V, Tc=125 °C
1
100
μA
μA
IGSS
Gate-body leakage
current (VDS
= 0)
VGS
= ± 25 V ±100 nA
VGS(th)
Gate threshold voltage VDS
= VGS
, ID
= 250 μA 2 3 4 V
RDS(on)
Static drain-source on-
resistance
VGS
= 10 V, ID
= 20 A 0.055 0.07 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS
= 50 V, f = 1 MHz,
VGS
= 0
-
4285
212
9.5
-
pF
pF
pF
Coss eq.
(1)
1. Coss eq.
is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS
increases from 0 to 80% VDS
Equivalent output
capacitance
VGS
= 0, VDS
= 0 to 480 V - 600 - pF
Rg
Intrinsic gate resistance f = 1 MHz, VGS
= 0 1.6 Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD
= 480 V, ID
= 44 A,
VGS
= 10 V,
(see Figure 15)-
124
20
61.5
-
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD
= 300 V, ID
= 20 A
RG
= 4.7 Ω VGS
= 10 V
(see Figure 14)-
99
18
214
25.5
-
ns
ns
ns
ns
STW48NM60N Electrical characteristics
Doc ID 18313 Rev 5 5/13
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
44
176
A
A
VSD
(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage ISD
= 44 A, VGS
= 0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD
= 44 A, di/dt = 100 A/μs
VDD
= 100 V
(see Figure 16)
-
472
10.5
44.5
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD
= 44 A, di/dt = 100 A/μs
VDD
= 100 V, Tj = 150 °C
(see Figure 16)-
568
14
50
ns
μC
A
Electrical characteristics STW48NM60N
6/13 Doc ID 18313 Rev 5
2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance
ID
100
10
1
0.10.1 1 100 VDS(V)10
(A)
Opera
tion
in th
is ar
ea is
Limite
d by
max
RDS(o
n)
10µs
100µs
1ms
10ms
Tj=150°CTc=25°CSingle pulse
AM09091v1
ID
60
40
20
00 10 VDS(V)20
(A)
5 15
80
100
5V
6V
7VVGS=10V
AM09092v1ID
60
40
20
00 4 VGS(V)8
(A)
2 6 10
80
100VDS=19V
AM09093v1
VDS
-50 0 TJ(°C)
(norm)
-25 7525 50 1000.920.94
0.96
0.98
1.00
1.02
1.04
1.06
ID=1mA
1.08
1.10
AM09028v1RDS(on)
0.054
0.053
0.052
0.0510 20 ID(A)
(Ω)
10 35
0.055
0.056
0.057
0.058VGS=10V
15 25 30 405
AM09095v1
STW48NM60N Electrical characteristics
Doc ID 18313 Rev 5 7/13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Output capacitance stored energy Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Source-drain diode forward characteristics
Figure 13. Normalized on-resistance vs temperature
VGS
6
4
2
00 20 Qg(nC)
(V)
80
8
40 60
10
VDD=480VID=44A
100
12
300
200
100
0
400
500VDS
120 140
AM09096v1 C
1000
100
10
10.1 10 VDS(V)
(pF)
1
10000
100
Ciss
Coss
Crss
AM09097v1
Eoss
4
00 100 VDS(V)
(µJ)
400200 300
8
500 600
12
16
20
24
AM15357v1 VGS(th)
1.00
0.90
0.80
0.70-50 0 TJ(°C)
(norm)
-25
1.10
7525 50 100
ID=250µA
125
AM09098v1
VSD
0 20 ISD(A)
(V)
10 30 400
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
TJ=150°C
TJ=25°C
5 15 25 35
1.4
AM09100v1RDS(on)
1.3
1.1
0.9
0.5-50 0 TJ(°C)
(norm)
-25 7525 50 100 125
0.7
1.9
1.7
1.5
2.1 ID=20A
AM09099v1
Test circuits STW48NM60N
8/13 Doc ID 18313 Rev 5
3 Test circuits
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
STW48NM60N Package mechanical data
Doc ID 18313 Rev 5 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK®
is an ST trademark.
Package mechanical data STW48NM60N
10/13 Doc ID 18313 Rev 5
Table 8. TO-247 mechanical data
Dim.mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
STW48NM60N Package mechanical data
Doc ID 18313 Rev 5 11/13
Figure 20. TO-247 drawing
0075325_G
Revision history STW48NM60N
12/13 Doc ID 18313 Rev 5
5 Revision history
Table 9. Document revision history
Date Revision Changes
06-Dec-2010 1 First release.
15-Apr-2011 2 Document status promoted from preliminary data to datasheet.
04-Jul-2011 3 Updated Figure 7.
10-Oct-2012 4
– Modified: Figure 2– Added: Figure 10
– Updated: Section 4: Package mechanical data
19-Feb-2013 5 Updated Table 7: Source drain diode.
STW48NM60N
Doc ID 18313 Rev 5 13/13
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