STF24NM60N, STI24NM60N, STP24NM60N, …DocID18047 Rev 4 3/20 STF24NM60N, STI24NM60N, STP24NM60N,...

This is information on a product in full production.

July 2014 DocID18047 Rev 4 1/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages

Datasheet − production data

Figure 1. Internal schematic diagram

Features

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications• Switching applications

DescriptionThese devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

12

3

TO-220FP

TO-220 TO-2471

23

1 2 3

TAB

I2PAK

Order codes VDS @Tjmax RDS(on) max. ID

STF24NM60N

650 V 0.19 Ω 17 ASTI24NM60N

STP24NM60N

STW24NM60N

Table 1. Device summary

Order code Marking Packages Packaging

STF24NM60N

24NM60N

TO-220FP

TubeSTI24NM60N I2PAK

STP24NM60N TO-220

STW24NM60N TO-247

www.st.com

http://www.st.com

Contents STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

2/20 DocID18047 Rev 4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 TO-220FP, STF24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.2 I2PAK, STI24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-220, STP24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.4 TO-247, STW24NM60N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

DocID18047 Rev 4 3/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical ratings

20

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter

Value

UnitI2PAKTO-220TO-247

TO-220FP

VGS Gate- source voltage ± 30 V

ID Drain current (continuous) at TC = 25 °C 17 17 (1)

1. Limited by maximum junction temperature.

A

IDDrain current (continuous) at TC = 100 °C

11 11 (1) A

IDM (2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 68 68 (1) A

PTOT Total dissipation at TC = 25 °C 125 30 W

dv/dt(3)

3. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope 15 V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C)

2500 V

TJ

Tstg

Operating junction temperature

Storage temperature-55 to 150 °C

Table 3. Thermal data

Symbol ParameterValue

UnitTO-220FP I2PAK TO-220 TO-247

Rthj-case Thermal resistance junction-case max. 4.17 1 °C/W

Rthj-ambThermal resistance junction-ambient max.

62.5 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

IARAvalanche current, repetitive or not-repetitive (pulse width limited by TJ max)

6 A

EASSingle pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)300 mJ

Electrical characteristics STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

4/20 DocID18047 Rev 4

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

VGS = 0, ID = 1 mA 600 V

IDSSZero gate voltage

drain current

VGS = 0, VDS = 600 V 1 µA

VGS = 0, VDS = 600 V, TC=125 °C

100 µA

IGSSGate-body leakagecurrent

VDS = 0, VGS = ± 25 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V

RDS(on)Static drain-source on- resistance

VGS = 10 V, ID = 8 A 0.168 0.19 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

- 1330 - pF

Coss Output capacitance - 80 - pF

Crss Reverse transfer capacitance

-3.2 - pF

Coss eq.(1)

1. Co(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS.

Equivalent output capacitance

VDS = 0 to 480 V, VGS = 0 - 182 - pF

Rg Gate input resistance f=1 MHz open drain - 5 - Ω

Qg Total gate charge VDD = 480 V, ID = 17 A,VGS = 10 V

(see Figure 19)

- 44 - nC

Qgs Gate-source charge - 7 - nC

Qgd Gate-drain charge - 24 - nC

DocID18047 Rev 4 5/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics

20

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td(on) Turn-on delay time VDD = 300 V, ID = 8.5 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 18)

- 11.5 - ns

tr(v) Voltage rise time - 16.5 - ns

td(off) Turn-off-delay time - 73 - ns

tf(i) Fall time - 37 - ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current - 17 A

ISDM (1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) - 68 A

VSD (2)

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 17 A, VGS = 0 - 1.6 V

trr Reverse recovery time ISD = 17 A, di/dt = 100 A/µs

VDD= 60 V(see Figure 20)

- 340 ns

Qrr Reverse recovery charge - 4.6 µC

IRRM Reverse recovery current - 27 A

trr Reverse recovery time ISD = 17 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C(see Figure 20)

- 404 ns

Qrr Reverse recovery charge - 5.7 µC

IRRM Reverse recovery current - 28 A


6/20 DocID18047 Rev 4

2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP

Figure 4. Safe operating area for I2PAK and TO-220

Figure 5. Thermal impedance for I2PAK and TO-220

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

ID

1

0.1

0.010.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs

100µs

1ms

10ms

Tj=150°CTc=25°C

Sinlgepulse

10

AM07975v1

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

Tj=150°CTc=25°C

Sinlgepulse

ID

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

10µs100µs

1ms

10msTj=150°CTc=25°C

Sinlgepulse

AM07976v1

ID

10

1

0.10.1 1 100 VDS(V)10

(A)

Ope

ratio

n in

this

area

is

Lim

ited

by m

ax R

DS(on

)

10µs

100µs

1ms

10msTj=150°CTc=25°CSingle pulse

AM10327v1

DocID18047 Rev 4 7/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics

20

Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

ID

20

10

00 10 VDS(V)20

(A)

5 15 25

30

40

VGS = 7 V

VGS = 5 V

VGS = 6 V

VGS = 10 V

AM07977v1

ID

20

10

00 4 VGS(V)8

(A)

2 6 10

30

40VDS= 20 V

AM07978v1

VGS

6

4

2

00 10 Qg(nC)

(V)

40

8

20 30

10

VDD=480V

ID= 17A

50

12

300

200

100

0

400

500

VDS

VDS

(V)

AM07979v1RDS(on)

0.164

0.162

0.160

0.1580 10 ID(A)

(Ω)

5 15

0.166

0.168

0.170

0.172

VGS=10V0.174

0.176

AM08534v1

C

1000

100

10

10.1 10 VDS(V)

(pF)

1 100

Ciss

Coss

Crss

AM08535v1 Eoss

1.0

00 100 VDS(V)

(µJ)

2.0

200

3.0

300 400

4.0

500

6.0

5.0

7.0

8.0

9.0

600

AM08536v1


8/20 DocID18047 Rev 4

Figure 14. Normalized gate threshold voltage vs temperature

Figure 15. Normalized on-resistance vs temperature

Figure 16. Normalized V(BR)DSS vs temperature Figure 17. Source-drain diode forward characteristics

VGS(th)

1.00

0.90

0.80

0.70-50 0 TJ(°C)

(norm)

-25

1.10

7525 50 100

ID = 250 µA

AM08537v1 RDS(on)

2.0

1.5

1.0

0.5-50 0 TJ(°C)

(norm)

-25 7525 50 100

ID= 8 A

AM08538v1

V(BR)DSS

-50 0 TJ(°C)

(norm)

-25 7525 50 1000.920.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA

1.08

1.10

AM09028v1 VSD

0 4 ISD(A)

(V)

2 106 80

0.2

0.4

0.6

0.8

1.0

1.4 TJ=-50°C

TJ=150°C

TJ=25°C

12 14 16

1.2

AM10328v1

DocID18047 Rev 4 9/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Test circuits

20

3 Test circuits

Figure 18. Switching times test circuit for resistive load

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load switching and diode recovery times

Figure 21. Unclamped inductive load test circuit

Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

Package mechanical data STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

10/20 DocID18047 Rev 4

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

http://www.st.com

DocID18047 Rev 4 11/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Package mechanical data

20

4.1 TO-220FP, STF24NM60N

Figure 24. TO-220FP drawing

7012510_Rev_K_B


12/20 DocID18047 Rev 4

Table 9. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Ø 3 3.2

DocID18047 Rev 4 13/20


20

4.2 I2PAK, STI24NM60N

Figure 25. I²PAK (TO-262) drawing

0004982_Rev_H


14/20 DocID18047 Rev 4

Table 10. I²PAK (TO-262) mechanical data

DIM.mm.

min. typ max.

A 4.40 4.60

A1 2.40 2.72

b 0.61 0.88

b1 1.14 1.70

c 0.49 0.70

c2 1.23 1.32

D 8.95 9.35

e 2.40 2.70

e1 4.95 5.15

E 10 10.40

L 13 14

L1 3.50 3.93

L2 1.27 1.40

DocID18047 Rev 4 15/20


20

4.3 TO-220, STP24NM60N

Figure 26. TO-220 type A drawing


16/20 DocID18047 Rev 4

Table 11. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

DocID18047 Rev 4 17/20


20

4.4 TO-247, STW24NM60N

Figure 27. TO-247 drawing

0075325_G


18/20 DocID18047 Rev 4

Table 12. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID18047 Rev 4 19/20

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Revision history

20

5 Revision history

Table 13. Document revision history

Date Revision Changes

05-Jan-2011 1 First release.

01-Jul-2011 2Corrected Rthj-amb value (see Table 3: Thermal data)Added new package and mechanical data: TO-247.

22-Aug-2011 3

Inserted device in I2PAK:updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal datainserted new mechanical data in Section 4: Package mechanical data

24-Jul-2014 4

– Modified: the entire typical values in Table 6

– Modified: Figure 12– Updated: Section 4: Package mechanical data– Minor text changes

STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N

20/20 DocID18047 Rev 4

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