Ge/SiGe Superlattices for Thermoelectric Applicationsnipslab.org/files/file/nips summer school...

Stefano Carlo Cecchi - stefanocarlocecchi@gmail.com

Ge/SiGe Superlattices for Thermoelectric Applications

S. C. Cecchi, F. Isa, J. Frigerio, D. Chrastina, G. Isella

A. Samarelli, L. Ferre Llin, D. J. Paul

E. Müller

Outline

Thermoelectric (TE) Effect Possible Applications

Figure of Merit

p-type Thermoelectric Materials

Figure of Merit Improvement

Lateral p-type Ge/SiGe Superlattice TE Design Active Layer Requirements

Low-Energy Plasma-Enhanced CVD (LEPECVD)

XRD and TEM Superlattices Characterization

Lateral TE Device: Fabrication Features

Thermal Conductivity Reduction: Phonon Engineering

Conclusions

Thermoelectric Effect

Power Generation: ΔT → ΔV (Seebeck effect)

Cooling and Heating Elements: ΔV → ΔT (Peltier effect)

An applied temperature gradient causes charged carriers in the material to diffuse from the hot side to the cold side, similar to a classical gas that expands when heated

ΔT > 5°C

Possible applications of TE

Integrated on-chip energy harvesting Power autonomous systems such as human body sensors Automobile waste-heat recovery Wrist-watches (Seiko Thermic) Combined heat and power system (CHP) Peltier coolers

Efficiency of a Thermoelectric Material: The Figure of Merit ZT 5

→ Maximize α2σ → High electrical conductivity combined with low thermal conductivity → Wiedemann-Franz law:

α = Seebeck coefficient T = Absolute temperature σ = Electrical coductivity λ = λlattice + λelectronic = Thermal conductivity

Bi2Te3 Rare materials Difficult to integrate onto silicon chips

Si and SiGe Compatible with backend CMOS and MEMS processing Best performances for high temperature (above 500°C) Most prominent application: radioisotope thermoelectric generators

(RTG) in deep space applications (e.g. Voyager 1&2, Cassini, …)

Material at 300 K N [cm-3] ρ [Ωm] α [µVK-1] κ

[Wm-1K-1] ZT (300K)

(BiSb)2 Te3 – 1.2x10–5 175 2.0 0.375

Si 1.5x1019 9.0x10–5 148 148 0.00049 Ge 1.0x1019 2.8x10–5 280 59.9 0.014

Si0.72Ge0.28 3.4x1019 4.0x10–5 245 6.5 0.069

p-type Thermoelectric Materials

Material at 300 K N [cm-3] ρ [Ωm] α [µVK-1] κ

[Wm-1K-1] ZT (300K)

(BiSb)2 Te3 – 1.2x10–5 175 2.0 0.375

[http://www.jpl.nasa.gov/]

2D Approach for Figure of Merit Improvements: Superlattice Structure

[L. D. Hicks, M. S. Dresselhaus, Phys. Rev. B 47, 12727 - 12731 (1993)]

Increase the TE figure of merit using superlattices (SL) structures

Bulk (3D structure)

Quantum Well (2D structure)

- - - Bulk SL

Lateral p-type Ge/SiGe Superlattice Thermoelectric Design

GREEN Silicon EU Project:

Integrated on-chip Ge/SiGe nanostructures TE energy harvesting ZT > 3 Maximize the generated power

Active Layer Requirements 9

Maximize the generated power:

→ ~10 µm Ge/Si1-xGex strain-symmetrised superlattice structure

Increase the thicknesses ratio

→ SOI substrates

Not trivial design for SiGe structures

→ high-quality interfaces → thicknesses control → strain-symmetrised structures

LEPECVD

Low Energy Plasma Enhanced Chemical Vapor Deposition (LEPECVD) - Basics

Gas-source plasma-assisted process → no thermal energy contribution → limited effect of surface

chemistry

Film composition and growth rate are independent from substrate temperature

High density - low energy plasma no ion-induced damage → epitaxy Wide range of growth rates (0.1 Å/s to 10 nm/s)

HR-XRD: Structural Characterization of SiGe Heterostructures [1] 11

Alloy composition

Film relaxation

Material and structures quality Crystal quality (peaks intensity) Interface quality (# of peaks) Period (fringes period)

Complete characterization of SiGe heterostructures

HR-XRD: Structural Characterization of SiGe Heterostructures [2] 12

Bragg Condition

HR-XRD: Structural Characterization of SiGe Heterostructures [3]

X0_peak = 82,9%

Xbarrier = 72,45% Xwell = 97,02%

PSL = 34,97 nm Tbarrier = 19,54 nm Twell = 14 nm

HR-XRD Characterization: Structure Quality vs Temperature 14

High intensity peaks in the regions around 32.0°and 34.25°for 8535 (grown at lower temperature)

better heterointerfaces due to reduction of interdiffusion and roughening

HR-XRD Characterization: Structure Quality vs Deposition Rate 15

High intensity peaks in the entire region for 8618 (grown at ~1 nm/s, 4 times higher rate than 8579)

better heterointerfaces due to reduction of interdiffusion

HRTEM Investigation 16

Profile Of HRTEM top layers

Determination of layer thicknesses

Intensity profiles along the growth direction (being averaged parallel to the interfaces over 200 pixels) were used. The faint blue frame in the HRTEM image indicates from which the intensity profile was taken.

Lateral TE Device: Fabrication Features 17

Free standing devices → thermal isolation

Thermal Conductivity Reduction: Phonon Engineering [1]

Only 5.92% acoustic phonons have a wavelenght > 3 nm → Multiple Ge/SiGe heterolayers to produce phononic bandgap structures

[S.T. Huxtable et al. Appl. Phys. Lett. 80, 1737 (2002)]

Additional phonon scattering at heterointerfaces also modify W-F law improving TE properties

Thermal Conductivity Reduction: Phonon Engineering [2] 19

Use a range of different QWs and barrier thicknesses between 1.2 and 3 nm could block 94.1% of acoustic phonons (short wavelenght acoustic phonons transport more thermal energy due to the higher density of states)

Compared to flat superlattices, nanocrystals (with lateral size of ~10 nm) scatter efficiently also phonons with relatively long wavelengths

Conclusions 20

Low dimensional structures can improve both figure of merit ZT and generated power

With LEPECVD technique it’s possible to grow 10 µm Ge/SiGe strain-symmetrised superlattices

HR-XRD is an indispensable instrument for structures characterization and growth parameters choice

HRTEM analysis confirmed high quality of material and interfaces grown by LEPECVD

University of Glasgow (U.K.)

Politecnico di Milano - Como (Italy)

Universität Linz (Austria)

ETH Zürich (Switzerland)

Green Silicon Participants

SiGe Epitaxy Group L-NESS – Politecnico di Milano

lness.como.polimi.it

Stefano Cecchi

Fabio Isa

Jacopo Frigerio

Daniel Chrastina

Giovanni Isella

The Team at PoliMi

Thank you for your attention

…Questions?

Ge/SiGe Superlattices for Thermoelectric Applicationsnipslab.org/files/file/nips summer school...

Documents

Transcript of Ge/SiGe Superlattices for Thermoelectric Applicationsnipslab.org/files/file/nips summer school...

WIDEBAND MILLIMETER-WAVE INTEGRATED CIRCUITS …ufdcimages.uflib.ufl.edu/UF/E0/04/14/81/00001/chen_y.pdf · · 2013-05-312.2.3 JAZZ 0.18 μm SiGe BiCMOS Technology ... 8.3.1 General

COEE EOMAGEIC ECIIAE A AOMAIES I E EA …przyrbwn.icm.edu.pl/APP/PDF/93/a093z5p10.pdfo 93 (199 T PH PLN o 5-COEE EOMAGEIC ECIIAE A AOMAIES I E EA COUCIO A EMOOWE O Μ-x C x S SIGE

Challenges and Opportunities in Thermoelectric Energy ...Arun Majumdar, UC Berkeley Majumdar, Science 303, 777 (2004) PbSeTe/PbTe QD Superlattices Harman et al., Science 297, 2229

)URQWLHUV Related Thermoelectric Properties … · 2018. 6. 13. · Powder X-ray diffraction patterns of material Ca0.85La0.15Ag0.90Sb. The theoretical predictions of Ca 0.85 La 0.15

Nanostructured semiconductors for thermoelectric ... - ITMOevent.itmo.info/images/pages/124/1.3. i_Wed3.pdfNanostructured semiconductors for thermoelectric applications: a theoretical

The Effective Thermoelectric Properties of Composite Materialsenergy.gov/sites/prod/files/2014/03/f10/li.pdf · The Effective Thermoelectric Properties of Composite Materials ...

Quantum wells and superlattices Quantum Well States (QWS ......•Quantum wells and superlattices gaps at k = nπ d • Electronic structure of semiconductor superlattices • Tight-binding

8. Semiconductor Crystals Band Gap Equations of Motion Intrinsic Carrier Concentration Impurity Conductivity Thermoelectric Effects Semimetals Superlattices.

Thermoelectric properties of Zn5Sb4In2-δ (δ=0.15)authors.library.caltech.edu/32813/1/Wu2012p18978J_Appl_Phys.pdf · Thermoelectric properties of Zn 5Sb 4In 2-d ... shows promising

A 13GHz Low Power Multi-Modulus Divider Implemented in …daifa01/Top/PubPapers/2009/cfpaper2009-09.pdf · A 13GHz Low Power Multi-Modulus Divider Implemented in 0.13μm SiGe Technology

Crystallinity Investigation of Compositionally Graded SiGe ... · e-mail: senda@covalent.co.jp izunome@covalent.co.jp tsusaka@sci.u-hyogo.ac.jp htakano@sci.u-hyogo.ac.jp kagosima@sci.u-hyogo.ac.jp

High-performance nanostructured thermoelectric materialstia-edu.jp/wp/wp-content/uploads/2015/07/2_am2010112a.pdf · 2020. 2. 18. · moderate progress had been made in the development

COMSOL Conference 2015 · 10 Thermoelectric Unicouple Temperature dependent material properties for Mg2Si High Seebeck coefficient measured in Ga-doped samples Electrical conductivity

Applications of Radiation...•Works on the thermoelectric principle also known as the ‘Seebeck Effect’. This is about 10% efficient. RTGs in Space – Half-Life •US RTGs use

A Wideband 77GHz, 17.5dBm Power Amplifier in Siliconhajimiri/pdf/77GHz PA-Komijani.pdf · SiGe BiCMOS process. ... and automotive radar (e.g., 77GHz band) [1][2][3]. ... approximately

What to do with THz? - wca.org · 0.25µm SiGe Sengupta [ISSCC11] 0.3THz Arrayed Transmitter -11 dBm (2x2Array)-45nm CMOS This Work 0.38THz Single Transceiver-13 dBm (EIRP) 35dB 0.13µm

Thermoelectrics of KdS i d t dKondo Semiconductors and ...hvar08.ifs.hr/workshop/slides/Takabatake.pdf · Outline ( ) S2 Figure of merit Z= Two strategies for high performance thermoelectric

COLLOIDAL PHOTONIC CRYSTALS AND e SUPERLATTICES FOR … annual 07/Clays.… · Overview: • Introduction to Photonic Crystals and colloidal PC’s • Photonic heterostructures:

Annual Report 2001 - mytilineos.gr · Fichter – Exergia has been selected as consultant. They have performed the feasibility study for the thermoelectric power station, which includes

ZT - Fyzikální Ústav Akademie Věd České Republikyknizek/pdf/ThermoelectricMaterials.pdf · 3 For almost all typical thermoelectric materials, namely low gap semiconductors ,