Post on 25-Jul-2020
TO-247
12
3
C(2, TAB)
E(3)NG1E3C2T
G(1)
Features• Maximum junction temperature: TJ = 175 °C• 10 μs of short-circuit withstand time• Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A• Tight parameter distribution• Positive VCE(sat) temperature coefficient• Low thermal resistance• Soft- and fast-recovery antiparallel diode
Applications• Industrial drives• UPS• Solar• Welding
DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimalbalance between inverter system performance and efficiency where the low-loss andthe short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer parallelingoperation.
Product status link
STGW25M120DF3
Product summary
Order code STGW25M120DF3
Marking G25M120DF3
Package TO-247
Packing Tube
Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
STGW25M120DF3
Datasheet
DS10300 - Rev 4 - November 2019For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 1200 V
ICContinuous collector current at TC = 25 °C 50 A
Continuous collector current at TC = 100 °C 25 A
ICP(1) Pulsed collector current 100 A
VGEGate-emitter voltage ±20 V
Transient gate-emitter voltage ±30 V
IFContinuous forward current at TC = 25 °C 50 A
Continuous forward current at TC = 100 °C 25 A
IFP(1) Pulsed forward current 100 A
PTOT Total power dissipation at TC = 25 °C 375 W
TSTG Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C
1. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJCThermal resistance junction-case IGBT 0.4 °C/W
Thermal resistance junction-case diode 0.96 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W
STGW25M120DF3Electrical ratings
DS10300 - Rev 4 page 2/16
2 Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 1200 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC = 25 A 1.85 2.3
V
VGE = 15 V, IC = 25 A,
TJ = 125 °C2.1
VGE = 15 V, IC = 25 A,
TJ = 175 °C2.2
VF Forward on-voltage
IF = 25 A 2.95 4.1
VIF = 25 A, TJ = 125 °C 2.25
IF = 25 A, TJ = 175 °C 1.9
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitanceVCE = 25 V, f = 1 MHz,
VGE = 0 V
- 1550 -
pFCoes Output capacitance - 180 -
Cres Reverse transfer capacitance - 65 -
Qg Total gate charge VCC = 960 V, IC = 25 A,
VGE = 0 to 15 V
(see Figure 29. Gate charge testcircuit)
- 85 -
nCQge Gate-emitter charge - 11.5 -
Qgc Gate-collector charge - 45.5 -
STGW25M120DF3Electrical characteristics
DS10300 - Rev 4 page 3/16
Table 5. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 600 V, IC = 25 A,
VGE = 15 V, RG = 15 Ω
(see Figure 28. Test circuit forinductive load switching)
28 - ns
tr Current rise time 15 - ns
(di/dt)on Turn-on current slope 1370 - A/µs
td(off) Turn-off delay time 150 - ns
tf Current fall time 155 - ns
Eon(1) Turn-on switching energy 0.85 - mJ
Eoff(2) Turn-off switching energy 1.3 - mJ
Ets Total switching energy 2.15 - mJ
td(on) Turn-on delay time
VCE = 600 V, IC = 25 A,
VGE = 15 V, RG = 15 Ω,
TJ = 175 °C
(see Figure 28. Test circuit forinductive load switching)
28 - ns
tr Current rise time 17 - ns
(di/dt)on Turn-on current slope 1270 - A/µs
td(off) Turn-off delay time 155 - ns
tf Current fall time 240 - ns
Eon(1) Turn-on switching energy 1.6 - mJ
Eoff(2) Turn-off switching energy 1.9 - mJ
Ets Total switching energy 3.5 - mJ
tsc Short-circuit withstand timeVCC ≤ 600 V, VGE = 15 V,
TJstart ≤ 150 °C10 - µs
1. Including the reverse recovery of the diode2. Including the tail of the collector current
Table 6. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 25 A, VR = 600 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 28. Test circuit forinductive load switching)
- 265 - ns
Qrr Reverse recovery charge - 1.2 - µC
Irrm Reverse recovery current - 19 - A
dIrr/dt Peak rate of fall of reverserecovery current during tb
- 1090 - A/µs
Err Reverse recovery energy - 0.22 - mJ
trr Reverse recovery timeIF = 25 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs
(see Figure 28. Test circuit forinductive load switching)
- 585 - ns
Qrr Reverse recovery charge - 5 - µC
Irrm Reverse recovery current - 30 - A
dIrr/dt Peak rate of fall of reverserecovery current during tb
- 270 - A/µs
Err Reverse recovery energy - 0.75 - mJ
STGW25M120DF3Electrical characteristics
DS10300 - Rev 4 page 4/16
2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
Ptot
240
160
80
00 50 100
(W)
320
150 TC(°C)
VGE ≥ 15 V, TJ ≤ 175 °C
GIPD301020140906FSR
Figure 2. Collector current vs case temperature
IC
30
20
10
00 50 100
(A)
40
150 TC(°C)
50VGE ≥ 15 V, TJ ≤ 175 °C
GIPD301020140909FSR
Figure 3. Output characteristics (TJ = 25 °C)
IC
60
40
20
00 1 3
(A)
2 4
80
VCE(V)
9V
11V
13VVGE=15V
5
7V
GIPD301020140913FSR
Figure 4. Output characteristics (TJ = 175 °C)
IC
80
60
20
00 1 3
(A)
2 4 VCE(V)
409V
11V
13VVGE=15V
5
7V
GIPD301020140919FSR
Figure 5. VCE(sat) vs junction temperature
VCE(sat)
2.0
1.2-50 0 100
(V)
50 150
2.4
TC(°C)
1.6
2.8
VGE=15V
IC=12.5A
IC=50A
IC=25A
3.2
GIPD301020140924FSR
Figure 6. VCE(sat) vs collector current
1.6
0.80 10 3020 40
2.0
IC(A)
1.2
2.4
VGE=15V Tj=175°C
Tj=25°C
Tj=-40°C
VCE(sat) (V)
2.8
3.2
GIPD301020141133FSR
STGW25M120DF3Electrical characteristics (curves)
DS10300 - Rev 4 page 5/16
Figure 7. Collector current vs switching frequency
IC
60
20
01
(A)
10 f(kHz)
40
TC=80°C
TC=100°C
Rectangular current shape,(duty cycle=0.5, Vcc= 600V Rg=15Ω, Vge=0/15V, Tj=175 °C)
GIPD301020141144FSR
Figure 8. Safe operating area
IC
10
1
(A)
10 VCE(V)1
10µs
100µs
1ms
100
Single pulse, Tc=25°CTj<175°C, VGE=15V
1µs
1000
100
GIPD301020141151FSR
Figure 9. Transfer characteristics
IC
80
60
20
03
(A)
5 VGE(V)
40 Tj=175°C
Tj=25°C
7 9 11
VCE = 8V
GIPD301020141159FSR
Figure 10. Diode VF vs forward current
2
00 20 6040 80
3
IC(A)
1
4
Tj=175°C
Tj=25°C
Tj=-40°CVF (V)
5
6
GIPD301020141203FSR
Figure 11. Normalized VGE(th) vs junction temperature
VGE(th)
0.8
1.1
-50
(norm)
TC(°C)0.7
0
0.9
1.0
50 100 150
VCE=VGE
IC=1mA
GIPD301020141315FSR
Figure 12. Normalized V(BR)CES vs junction temperature
V(BR)CES
1.04
0.88-50
(norm)
TC(°C)
1.00
0 50 100 150
IC=2mA
0.92
0.96
GIPD301020141322FSR
STGW25M120DF3Electrical characteristics (curves)
DS10300 - Rev 4 page 6/16
Figure 13. Capacitance variations
C(pF)
100
0.1 VCE(V)1 10
1000
Cies
Coes
Cres10
100
f= 1MHz
GIPD301020141335FSR
Figure 14. Gate charge vs gate-emitter voltage
VGE(V)
00 Qg(nC)40 80
4
8
12
16
20 60
VCC = 960 VIC = 25 AIG = 1 mA
GIPD301020141341FSR
Figure 15. Switching energy vs collector current
E(mJ)
0.00 IC(A)
0.8
10 20
1.6
30 40
VCC=600V, VGE=15VRg=15Ω, Tj=175°C
2.4
3.2
Eon
Eoff
50
GIPD301020141347FSR
Figure 16. Switching energy vs gate resistance
E(mJ)
0 Rg(Ω)
1.4
10 201.0
1.8
30 40
VCC=600V, VGE=15VIC=25A, Tj=175°C
2.2
2.6
Eon
Eoff
50 60
GIPD301020141410FSR
Figure 17. Switching energy vs junction temperature
E(mJ)
TJ(°C)
1.0
500.8
1.2
100
VCC=600V, VGE=15VIC=25A, Rg=15Ω
1.4
1.6
1.8
Eon
Eoff
1500
GIPD301020141418FSR
Figure 18. Switching energy vs collector emitter voltage
E(mJ)
200 VCE(V)
1.5
400 6000.5
2.5
800
VGE=15V, Tj=175°CIC=25A, Rg=15Ω
Eon
Eoff
1.0
2.0
GIPD301020141422FSR
STGW25M120DF3Electrical characteristics (curves)
DS10300 - Rev 4 page 7/16
Figure 19. Short-circuit time and current vs VGE
tsc(µs)
9 VGE(V)
25
10 115
12
VCC ≤ 600VTJ ≤150 °C
Isc
tsc
15
35
13 14 15
100
20
60
140
Isc(A)GIPD301020141425FSR
Figure 20. Switching times vs collector current
t(ns)
0 IC(A)10 201
30 40
VCC=600V,Tj=175°C,
VGE=15VRg=15Ω
tdoff
tdon
10
tf
tr
50
100
GIPD301020141429FSR
Figure 21. Switching times vs gate resistance
t(ns)
0 Rg(Ω)10 20
100
30 40
VCC=600V,Tj=175°C,
VGE=15VIC=25A
tdoff
tdon
tr
tf
5010
60
GIPD301020141432FSR
Figure 22. Reverse recovery current vs diode currentslope
Irrm(A)
200 di/dt(A/µs)800 1400
24
2000
VCC=600V,Tj=175°C,
VGE=15VIF=25A
32
16
40
48
GIPD301020141437FSR
Figure 23. Reverse recovery time vs diode current slope
trr(ns)
200 di/dt(A/µs)800 1400
400
2000
VCC=600V,Tj=175°C,
VGE=15VIF=25A
500
300
600
700
GIPD301020141439FSR
Figure 24. Reverse recovery charge vs diode currentslope
Qrr(µC)
200 di/dt(A/µs)800 1400
4.4
2000
VCC=600V,Tj=175°C,
VGE=15VIF=25A
4.6
4.2
4.8
5.0
5.2
GIPD301020141442FSR
STGW25M120DF3Electrical characteristics (curves)
DS10300 - Rev 4 page 8/16
Figure 25. Reverse recovery energy vs diode current slope
Err(mJ)
200 di/dt(A/µs)800 1400
0.5
2000
VCC=600V,Tj=175°C,
VGE=15VIF=25A
0.6
0.4
0.7
0.8
0.9
GIPD301020141445FSR
Figure 26. Thermal impedance for IGBT
ZthTO2T_A
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1
K
tp (s)
δ = 0.5
δ = 0.2
δ = 0.1 δ = 0.05
δ = 0.02
δ = 0.01
Single pulse
Figure 27. Thermal impedance for diode
STGW25M120DF3Electrical characteristics (curves)
DS10300 - Rev 4 page 9/16
3 Test circuits
Figure 28. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 29. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 30. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)
ton
tr(Ion)
td(off)
toff
tf
tr(Voff)
tcross
90%
10%
Figure 31. Diode reverse recovery waveform
t
GADG180720171418SA
10%
VRRM
dv/dt
di/dt
IRRM
IF
trr
ts tf
Qrr
IRRM
STGW25M120DF3Test circuits
DS10300 - Rev 4 page 10/16
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
STGW25M120DF3Package information
DS10300 - Rev 4 page 11/16
4.1 TO-247 package information
Figure 32. TO-247 package outline
0075325_9
STGW25M120DF3TO-247 package information
DS10300 - Rev 4 page 12/16
Table 7. TO-247 package mechanical data
Dim.mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70
STGW25M120DF3TO-247 package information
DS10300 - Rev 4 page 13/16
Revision history
Table 8. Document revision history
Date Version Changes
22-Apr-2014 1 Initial release.
31-Oct-2014 2
Document status promoted from preliminary to production data. Updated allthe document accordingly.
Added Section 2.1: Electrical characteristics (curves).
Updated Section 4: Package mechanical data.
18-Jun-2018 3
The part number STGWA25M120DF3 has been moved to a separatedatasheet, and the document has been updated accordingly.
Updated features list on cover page.
Updated Table 1. Absolute maximum ratings.
Minor text changes
20-Nov-2019 4Modified Table 3. Static characteristics.
Minor text changes.
STGW25M120DF3
DS10300 - Rev 4 page 14/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
STGW25M120DF3Contents
DS10300 - Rev 4 page 15/16
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2019 STMicroelectronics – All rights reserved
STGW25M120DF3
DS10300 - Rev 4 page 16/16