Post on 14-Oct-2014
9 11 26Rev. 3.1
VDS Tjmax
Ω•
•
•
•
•
•
• G ;-3-111
G FP G
P-TO220-3-31
12
3
G
G FP SP000216299
TC
TC
tp Tjmax
VDD
Tjmax
VDD
EAR
Tjmax
Gate source voltage static VGS
VGS ± ±Power dissipation, TC = 25°C Ptot
Reverse diode dv/dt dv/dt 15 V/ns7)
9 11 26Rev. 3.1
VDS Tj
RthJC
RthJA
wavesoldering
V(BR)DSS VGS
VGS
µ
VDS VGS
Tj
Tj
VGS VDS
VGS
Tj
Tj
Ω
RG
9 11 26Rev. 3.1
Transconductance gfs VDS≥
Input capacitance Ciss VGS VDS
fOutput capacitance Coss
Reverse transfer capacitance Crss
VGS
VDS
Turn-on delay time td(on) VDD VGS
RG Ω
Rise time trTurn-off delay time td(off)
Fall time tf
Gate to source charge Qgs VDD
Gate to drain charge Qgd
VDD
VGS
VDD
EAR f
Coss VDS
Coss VDS
7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.
9 11 26Rev. 3.1
TC
Inverse diode direct current,
pulsed
ISM
VGS
Reverse recovery time trr VR
diF/dtReverse recovery charge Qrr
Peak reverse recovery current Irrm
Tj
9 11 26Rev. 3.1
3
TC
TC
Pto
t
Ptot TC
TC
Pto
t
TC
VDS
VDS
TC
VDS
9 11 26Rev. 3.1
tp
tptp
tp
VDS Tj
VGS
VDS
VDS Tj
VGS
VDS
9 11 26Rev. 3.1
f
Tj VGS
Ω
VGS
Tj
Ω
≥
VGS
VGS
VG
S
9 11 26Rev. 3.1
I F
Tj
VDS VGS RG Ω
RG Tj
VDS VGS
ΩRG
di/dt RG Tj
VDS VGS
ΩRG
di/d
t
9 11 26Rev. 3.1
dv/dt RG Tj
VDS VGS
ΩRG
dv/d
t
Tj
VDS VGS RG Ω
RG Tj
VDS VGS
ΩRG
Tj ≤
9 11 26Rev. 3.1
Tj
VDD
Tj
f
EAR
f
V(BR)DSS Tj
Tj
V(B
R)D
SS
VDS
VGS
VDS
Ciss
Coss
Crss
9 11 26Rev. 3.1
3
Coss
f VDS
VDS
2009-11-26Rev. 3.1 Page 12
SPP04N60C3SPA04N60C3
PG-TO220-3-1, PG-TO220-3-21 : Outline
2009-11-26Rev. 3.1 Page 13
SPP04N60C3SPA04N60C3
PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)
9 11 26Rev. 3.1 4
SPP04N60C3SPA04N60C3