9 11 26Rev. 3.1

VDS Tjmax

Ω•

•

•

•

•

•

• G ;-3-111

G FP G

P-TO220-3-31

12

3

G

G FP SP000216299

TC

TC

tp Tjmax

VDD

Tjmax

VDD

EAR

Tjmax

Gate source voltage static VGS

VGS ± ±Power dissipation, TC = 25°C Ptot

Reverse diode dv/dt dv/dt 15 V/ns7)

9 11 26Rev. 3.1

VDS Tj

RthJC

RthJA

wavesoldering

V(BR)DSS VGS

VGS

µ

VDS VGS

Tj

Tj

VGS VDS

VGS

Tj

Tj

Ω

RG

9 11 26Rev. 3.1

Transconductance gfs VDS≥

Input capacitance Ciss VGS VDS

fOutput capacitance Coss

Reverse transfer capacitance Crss

VGS

VDS

Turn-on delay time td(on) VDD VGS

RG Ω

Rise time trTurn-off delay time td(off)

Fall time tf

Gate to source charge Qgs VDD

Gate to drain charge Qgd

VDD

VGS

VDD

EAR f

Coss VDS

Coss VDS

7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch.

9 11 26Rev. 3.1

TC

Inverse diode direct current,

pulsed

ISM

VGS

Reverse recovery time trr VR

diF/dtReverse recovery charge Qrr

Peak reverse recovery current Irrm

Tj

9 11 26Rev. 3.1

3

TC

TC

Pto

t

Ptot TC

TC

Pto

t

TC

VDS

VDS

TC

VDS

9 11 26Rev. 3.1

tp

tptp

tp

VDS Tj

VGS

VDS

VDS Tj

VGS

VDS

9 11 26Rev. 3.1

f

Tj VGS

Ω

VGS

Tj

Ω

≥

VGS

VGS

VG

S

9 11 26Rev. 3.1

I F

Tj

VDS VGS RG Ω

RG Tj

VDS VGS

ΩRG

di/dt RG Tj

VDS VGS

ΩRG

di/d

t

9 11 26Rev. 3.1

dv/dt RG Tj

VDS VGS

ΩRG

dv/d

t

Tj

VDS VGS RG Ω

RG Tj

VDS VGS

ΩRG

Tj ≤

9 11 26Rev. 3.1

Tj

VDD

Tj

f

EAR

f

V(BR)DSS Tj

Tj

V(B

R)D

SS

VDS

VGS

VDS

Ciss

Coss

Crss

9 11 26Rev. 3.1

3

Coss

f VDS

VDS

2009-11-26Rev. 3.1 Page 12

SPP04N60C3SPA04N60C3

PG-TO220-3-1, PG-TO220-3-21 : Outline

2009-11-26Rev. 3.1 Page 13

SPP04N60C3SPA04N60C3

PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)

9 11 26Rev. 3.1 4

SPP04N60C3SPA04N60C3