999999-1XYZ 04/18/23

Fabricated Arrays

Si>2e18

Si>2e18

n<5e15

Si:3.3e17nid

Zn:8e17

Zn:2e18

CCS-0888-A

10 nm

1 μm1.5 μm

68.5 nm

2 μm

1 μm

2 μm

InP Substrate

p+ InP

p+ InPn-InP avalanche

InP field stopn-InP absorber

n+ -InP capn+ -InGaAs contact Si>2e18

Si>2e18

n<5e15

Si:3.3e17nid

Zn:8e17

Zn:2e18

CCS-0889-A

10 nm

1 μm1.5 μm

53.5 nm

3 μm

1 μm

2 μm

InP Substrate

p+ InP

p+ InPn-InP avalanche

InP field stopn-InP absorber

n+ -InP capn+ -InGaAs contact

Si>2e18

Si>2e18

n<5e15

Si:3.3e17nid

Zn:8e17

Zn:2e18

CCS-0890-A

10 nm

1 μm1.5 μm

53.5 nm

2 μm

1 μm

2 μm

InP Substrate

p+ InP

p+ InPn-InP avalanche

InP field stop

n-InGaAs absorbern+ -InP cap

n+ -InGaAs contact

n- InGaAsP grading n<5e15100 nm

Si>2e18

Si>2e18

n<5e15

Si:3.3e17nid

Zn:8e17

Zn:2e18

CCS-1061-A

10 nm

1 μm1.5 μm

61.5 nm

2 μm

1 μm

2 μm

InP Substrate

p+ InP

p+ InPn-InP avalanche

InP field stopn-InP absorber

n+ -InP capn+ -InGaAs contact

999999-2XYZ 04/18/23

Room Temperature Probe Data

999999-3XYZ 04/18/23

Estimate Based on Asynchronus Data

• Current Board had some fundamental problem which cannot be resolved.

• Estimates based on previously measured 77 K discrete devices and room temp arrays:

– DCR < 1 Hz at 77K– PDE ~ 30% over array– Fill Factor ~ 75 % with

µlens

A1*e-λ1t + A2*e-λ2t

λ1=51.3λ2=8.02