999999-1 XYZ 6/10/2015 Fabricated Arrays Si>2e18 n
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999999-1 XYZ 03/27/22 Fabricated Arrays Si>2e1 8 Si>2e18 n<5e15 Si:3.3e 17 nid Zn:8e17 Zn:2e18 CCS-0888-A 10 nm 1 μm 1.5 μm 68.5 nm 2 μm 1 μm 2 μm InP Substrate p + InP p+ InP n-InP avalanche InP field stop n-InP absorber n + -InP cap n + -InGaAs contact Si>2e1 8 Si>2e18 n<5e15 Si:3.3e 17 nid Zn:8e17 Zn:2e18 CCS-0889-A 10 nm 1 μm 1.5 μm 53.5 nm 3 μm 1 μm 2 μm InP Substrate p + InP p+ InP n-InP avalanche InP field stop n-InP absorber n + -InP cap n + -InGaAs contact Si>2e1 8 Si>2e18 n<5e15 Si:3.3e 17 nid Zn:8e17 Zn:2e18 CCS-0890-A 10 nm 1 μm 1.5 μm 53.5 nm 2 μm 1 μm 2 μm InP Substrate p + InP p+ InP n-InP avalanche InP field stop n-InGaAs absorber n + -InP cap n + -InGaAs contact n- InGaAsP grading n<5e15 100 nm Si>2e1 8 Si>2e18 n<5e15 Si:3.3e 17 nid Zn:8e17 Zn:2e18 CCS-1061-A 10 nm 1 μm 1.5 μm 61.5 nm 2 μm 1 μm 2 μm InP Substrate p + InP p+ InP n-InP avalanche InP field stop n-InP absorber n + -InP cap n + -InGaAs contact
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Transcript of 999999-1 XYZ 6/10/2015 Fabricated Arrays Si>2e18 n
999999-1XYZ 04/18/23
Fabricated Arrays
Si>2e18
Si>2e18
n<5e15
Si:3.3e17nid
Zn:8e17
Zn:2e18
CCS-0888-A
10 nm
1 μm1.5 μm
68.5 nm
2 μm
1 μm
2 μm
InP Substrate
p+ InP
p+ InPn-InP avalanche
InP field stopn-InP absorber
n+ -InP capn+ -InGaAs contact Si>2e18
Si>2e18
n<5e15
Si:3.3e17nid
Zn:8e17
Zn:2e18
CCS-0889-A
10 nm
1 μm1.5 μm
53.5 nm
3 μm
1 μm
2 μm
InP Substrate
p+ InP
p+ InPn-InP avalanche
InP field stopn-InP absorber
n+ -InP capn+ -InGaAs contact
Si>2e18
Si>2e18
n<5e15
Si:3.3e17nid
Zn:8e17
Zn:2e18
CCS-0890-A
10 nm
1 μm1.5 μm
53.5 nm
2 μm
1 μm
2 μm
InP Substrate
p+ InP
p+ InPn-InP avalanche
InP field stop
n-InGaAs absorbern+ -InP cap
n+ -InGaAs contact
n- InGaAsP grading n<5e15100 nm
Si>2e18
Si>2e18
n<5e15
Si:3.3e17nid
Zn:8e17
Zn:2e18
CCS-1061-A
10 nm
1 μm1.5 μm
61.5 nm
2 μm
1 μm
2 μm
InP Substrate
p+ InP
p+ InPn-InP avalanche
InP field stopn-InP absorber
n+ -InP capn+ -InGaAs contact
999999-2XYZ 04/18/23
Room Temperature Probe Data
999999-3XYZ 04/18/23
Estimate Based on Asynchronus Data
• Current Board had some fundamental problem which cannot be resolved.
• Estimates based on previously measured 77 K discrete devices and room temp arrays:
– DCR < 1 Hz at 77K– PDE ~ 30% over array– Fill Factor ~ 75 % with
µlens
A1*e-λ1t + A2*e-λ2t
λ1=51.3λ2=8.02
