© 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
May 2006
FRFETTMFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
DescriptionThese N-Channel enhancement mode power field effect transis-tors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factorcorrection.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220FDP Series
G SD
D
G
S
TO-220FFQPF Series
G SD
Symbol Parameter FQP13N50CF FQPF13N50CF UnitVDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 13 13* A
- Continuous (TC = 100°C) 8 8* A
IDM Drain Current - Pulsed (Note 1) 52 52* A
VGSS Gate-Source voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ
IAR Avalanche Current (Note 1) 13 A
EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 195 48 W
- Derate above 25°C 1.56 0.39 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C
Symbol Parameter FQP13N50CF FQPF13N50CF UnitRθJC Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
2 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.6mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking Device Package Reel Size Tape Width QuantityFQP13N50CF FQP13N50CF TO-220 - - 50
FQPF13N50CF FQPF13N50CF TO-220F - - 50
Symbol Parameter Conditions Min Typ Max UnitsOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V
∆BVDSS/ ∆TJ
Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA
VDS = 400V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V
RDS(on) Static Drain-SourceOn-Resistance VGS = 10V, ID = 6.5A -- 0.43 0.54 Ω
gFS Forward Transconductance VDS = 40V, ID = 6.5A (Note 4) -- 15 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V,f = 1.0MHz
-- 1580 2055 pF
Coss Output Capacitance -- 180 235 pF
Crss Reverse Transfer Capacitance -- 20 25 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250V, ID = 13ARG = 25Ω
(Note 4, 5)
-- 25 60 ns
tr Turn-On Rise Time -- 100 210 ns
td(off) Turn-Off Delay Time -- 130 270 ns
tf Turn-Off Fall Time -- 100 210 ns
Qg Total Gate Charge VDS = 400V, ID = 13AVGS = 10V
(Note 4, 5)
-- 43 56 nC
Qgs Gate-Source Charge -- 7.5 -- nC
Qgd Gate-Drain Charge -- 18.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 13A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0V, IS = 13AdIF/dt =100A/µs (Note 4)
-- 100 160 ns
Qrr Reverse Recovery Charge -- 0.35 -- µC
3 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100 10110-1
100
101
VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 VBottom : 4.5 V
Notes :※ 1. 250µs Pulse Test 2. TC = 25℃
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
2 4 6 8 1010-1
100
101
150oC
25oC-55oC
Notes :※ 1. VDS = 40V 2. 250µs Pulse Test
I D, D
rain
Cur
rent
[A]
VGS, Gate-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.410-1
100
101
150℃ Notes :※
1. VGS = 0V 2. 250µs Pulse Test
25℃
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain voltage [V]0 5 10 15 20 25 30 35
0.5
1.0
1.5
VGS = 20V
VGS = 10V
Note : T※ J = 25℃
RDS
(ON)
[Ω],
Dra
in-S
ourc
e O
n-R
esis
tanc
e
ID, Drain Current [A]
10-1 100 1010
500
1000
1500
2000
2500
3000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd
Notes ;※ 1. VGS = 0 V 2. f = 1 MHzCrss
Coss
Ciss
Cap
acita
nce
[pF]
VDS, Drain-Source Voltage [V]
0 10 20 30 40 500
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
Note : I※ D = 13A
V GS,
Gat
e-So
urce
Vol
tage
[V]
QG, Total Gate Charge [nC]
4 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP13N50CF for FQPF13N50CF
Figure 10. Maximum Drain Current vs. Case Temperature
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※ 1. VGS = 10 V 2. ID = 6.5 A
RDS
(ON), (
Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
Notes :※ 1. VGS = 0 V 2. ID = 250 µA
BVDS
S, (N
orm
aliz
ed)
Dra
in-S
ourc
e Br
eakd
own
Volta
ge
TJ, Junction Temperature [oC]
100 101 102 10310-2
10-1
100
101
102
103
DC
100ms
10ms1ms
100 µs10 µs
Operation in This Area is Limited by R DS(on)
* Notes : 1. TC = 25
oC 2. TJ = 150
oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-SourceVoltage[V]
100 101 102 10310-2
10-1
100
101
102
103
DC100ms
10ms1ms
100 µs
10 µs
Operation in This Area is Limited by R DS(on)
* Notes : 1. TC = 25
oC 2. TJ = 150
oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-SourceVoltage[V]
25 50 75 100 125 1500
2
4
6
8
10
12
14
I D, D
rain
Cur
rent
[A]
TC, Case Temperature [ ]℃
5 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP13N50CF
Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
N o tes :※ 1 . Z θ JC(t) = 0 .6 4 /W M a x .℃ 2 . D u ty F ac to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC
(t), T
herm
al R
espo
nse
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
t1
PDM
t2
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
1 0 -2
1 0 -1
1 0 0
N o te s :※ 1 . Z θ JC(t) = 2 .5 8 /W M a x .℃ 2 . D u ty F a c to r, D = t1/t2 3 . T J M - T C = P D M * Z θ JC(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z θJC
(t), T
herm
al R
espo
nse
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
t1
PDM
t2
6 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
7 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
8 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Mechanical Dimensions
4.50 ±0.209.90 ±0.20
1.52 ±0.10
0.80 ±0.102.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80
±0.
1015
.90 ±0
.20
10.0
8 ±0
.30
18.9
5MA
X.
(1.7
0)
(3.7
0)(3
.00)
(1.4
6)
(1.0
0)
(45°)
9.20
±0.
2013
.08 ±0
.20
1.30
±0.
10
1.30+0.10�–0.05
0.50+0.10�–0.05
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
TO-220
Dimensions in Millimeters
9 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Mechanical Dimensions (Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.
1015
.80 ±0
.20
15.8
7 ±0
.20
6.68
±0.
20
9.75
±0.
30
4.70
±0.
20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.200.35 ±0.10
ø3.18 ±0.10
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
0.50+0.10�–0.05
TO-220F
Dimensions in Millimeters
10 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1
FQP13N
50CF / FQ
PF13N50C
F 500V N-C
hannel MO
SFET
Rev. I19
TRADEMARKS
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DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESESPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.
2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™
FAST®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™IntelliMAX™
ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™Power247™
PowerEdge™PowerSaver™PowerTrench®QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™ScalarPump™SILENT SWITCHER®SMART START™SPM™Stealth™
SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic®TINYOPTO™TruTranslation™UHC™UniFET™UltraFET®VCX™Wire™
FACT Quiet Series™Across the board. Around the world.™The Power Franchise®Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
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