© 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

May 2006

FRFETTMFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V

• Low gate charge (typical 43 nC)

• Low Crss (typical 20pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 100ns)

DescriptionThese N-Channel enhancement mode power field effect transis-tors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche andcommutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factorcorrection.

Absolute Maximum Ratings

*Drain current limited by maximum junction temperature

Thermal Characteristics

TO-220FDP Series

G SD

D

G

S

TO-220FFQPF Series

G SD

Symbol Parameter FQP13N50CF FQPF13N50CF UnitVDSS Drain-Source Voltage 500 V

ID Drain Current - Continuous (TC = 25°C) 13 13* A

- Continuous (TC = 100°C) 8 8* A

IDM Drain Current - Pulsed (Note 1) 52 52* A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ

IAR Avalanche Current (Note 1) 13 A

EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C) 195 48 W

- Derate above 25°C 1.56 0.39 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C

Symbol Parameter FQP13N50CF FQPF13N50CF UnitRθJC Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

2 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.6mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width QuantityFQP13N50CF FQP13N50CF TO-220 - - 50

FQPF13N50CF FQPF13N50CF TO-220F - - 50

Symbol Parameter Conditions Min Typ Max UnitsOff Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V

∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA

VDS = 400V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 -- 4.0 V

RDS(on) Static Drain-SourceOn-Resistance VGS = 10V, ID = 6.5A -- 0.43 0.54 Ω

gFS Forward Transconductance VDS = 40V, ID = 6.5A (Note 4) -- 15 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,f = 1.0MHz

-- 1580 2055 pF

Coss Output Capacitance -- 180 235 pF

Crss Reverse Transfer Capacitance -- 20 25 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 250V, ID = 13ARG = 25Ω

(Note 4, 5)

-- 25 60 ns

tr Turn-On Rise Time -- 100 210 ns

td(off) Turn-Off Delay Time -- 130 270 ns

tf Turn-Off Fall Time -- 100 210 ns

Qg Total Gate Charge VDS = 400V, ID = 13AVGS = 10V

(Note 4, 5)

-- 43 56 nC

Qgs Gate-Source Charge -- 7.5 -- nC

Qgd Gate-Drain Charge -- 18.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 13A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 13AdIF/dt =100A/µs (Note 4)

-- 100 160 ns

Qrr Reverse Recovery Charge -- 0.35 -- µC

3 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100 10110-1

100

101

VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 VBottom : 4.5 V

Notes :※ 1. 250µs Pulse Test 2. TC = 25℃

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

2 4 6 8 1010-1

100

101

150oC

25oC-55oC

Notes :※ 1. VDS = 40V 2. 250µs Pulse Test

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

150℃ Notes :※

1. VGS = 0V 2. 250µs Pulse Test

25℃

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain voltage [V]0 5 10 15 20 25 30 35

0.5

1.0

1.5

VGS = 20V

VGS = 10V

Note : T※ J = 25℃

RDS

(ON)

[Ω],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]

10-1 100 1010

500

1000

1500

2000

2500

3000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

Notes ;※ 1. VGS = 0 V 2. f = 1 MHzCrss

Coss

Ciss

Cap

acita

nce

[pF]

VDS, Drain-Source Voltage [V]

0 10 20 30 40 500

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

Note : I※ D = 13A

V GS,

Gat

e-So

urce

Vol

tage

[V]

QG, Total Gate Charge [nC]

4 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP13N50CF for FQPF13N50CF

Figure 10. Maximum Drain Current vs. Case Temperature

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※ 1. VGS = 10 V 2. ID = 6.5 A

RDS

(ON), (

Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :※ 1. VGS = 0 V 2. ID = 250 µA

BVDS

S, (N

orm

aliz

ed)

Dra

in-S

ourc

e Br

eakd

own

Volta

ge

TJ, Junction Temperature [oC]

100 101 102 10310-2

10-1

100

101

102

103

DC

100ms

10ms1ms

100 µs10 µs

Operation in This Area is Limited by R DS(on)

* Notes : 1. TC = 25

oC 2. TJ = 150

oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-SourceVoltage[V]

100 101 102 10310-2

10-1

100

101

102

103

DC100ms

10ms1ms

100 µs

10 µs

Operation in This Area is Limited by R DS(on)

* Notes : 1. TC = 25

oC 2. TJ = 150

oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-SourceVoltage[V]

25 50 75 100 125 1500

2

4

6

8

10

12

14

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [ ]℃

5 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP13N50CF

Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

N o tes :※ 1 . Z θ JC(t) = 0 .6 4 /W M a x .℃ 2 . D u ty F ac to r, D = t1/t2 3 . T JM - T C = P D M * Z θ JC(t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC

(t), T

herm

al R

espo

nse

t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

t1

PDM

t2

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

N o te s :※ 1 . Z θ JC(t) = 2 .5 8 /W M a x .℃ 2 . D u ty F a c to r, D = t1/t2 3 . T J M - T C = P D M * Z θ JC(t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC

(t), T

herm

al R

espo

nse

t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

t1

PDM

t2

6 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

7 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

8 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Mechanical Dimensions

4.50 ±0.209.90 ±0.20

1.52 ±0.10

0.80 ±0.102.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80

±0.

1015

.90 ±0

.20

10.0

8 ±0

.30

18.9

5MA

X.

(1.7

0)

(3.7

0)(3

.00)

(1.4

6)

(1.0

0)

(45°)

9.20

±0.

2013

.08 ±0

.20

1.30

±0.

10

1.30+0.10�–0.05

0.50+0.10�–0.05

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

TO-220

Dimensions in Millimeters

9 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Mechanical Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

#1

3.30

±0.

1015

.80 ±0

.20

15.8

7 ±0

.20

6.68

±0.

20

9.75

±0.

30

4.70

±0.

20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.200.35 ±0.10

ø3.18 ±0.10

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

0.50+0.10�–0.05

TO-220F

Dimensions in Millimeters

10 www.fairchildsemi.comFQP13N50CF / FQPF13N50CF Rev. A1

FQP13N

50CF / FQ

PF13N50C

F 500V N-C

hannel MO

SFET

Rev. I19

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESESPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.

As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™

FAST®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™IntelliMAX™

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PowerEdge™PowerSaver™PowerTrench®QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™ScalarPump™SILENT SWITCHER®SMART START™SPM™Stealth™

SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic®TINYOPTO™TruTranslation™UHC™UniFET™UltraFET®VCX™Wire™

FACT Quiet Series™Across the board. Around the world.™The Power Franchise®Programmable Active Droop™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.