UPC2766GR

FEATURES

• BROADBAND OPERATIONRF & LO DC to 1 GHzIF (IQ) DC to 100 MHz

• WIDEBAND IQ PHASE AND AMPLITUDE MATCHINGAmplitude Matching: ±0.3 dB TypicalPhase Matching: ±0.3° (driven in phase)

• AGC DYNAMIC RANGE:30 dB Typical

• LOW DISTORTION:30 dBc Typical

• SMALL SSOP 20 PACKAGE

• TAPE AND REEL PACKAGING AVAILABLE

FUNCTIONAL BLOCK DIAGRAM

PART NUMBER UPC2766GRPACKAGE OUTLINE S20 (SSOP 20)

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICC Circuit Current (no signal) mA 60 78

fRF RF Input Bandwidth2 fIF = 40 MHz, fRF > fLO, 3 dB down MHz DC-750 DC-1000

fIF IF Output Bandwidth3 fRF = 480 MHz, fRF> fLO, 3 dB down, VAGC = 0 V MHz 200

CG Conversion Gain dB 15 20 25

NF Noise Figure dB 21

IM3 3rd Order Intermodulation DistortionfRF1 = 480 MHz, fRF2 = 490 MHz, fLO = 440 MHz, PIN = -20 dBm, VAGC = 1 V dBc 30

∆Φ IQ Phase Balance (LO driven in phase) deg ±0.3 ±1.5

∆G IQ Amplitude Balance dB ±0.3 ±0.5

GAGC AGC Range, VAGC = 0-5 V dB 40 45

LO-RF LO to RF Isolation dB 55

LO-IF LO to IF Isolation dB 10

PSAT Saturated Output Level dBm +2

VO Saturated Output Voltage (ZL = 250 Ω//2pF) VP-P 1.2 1.5

ELECTRICAL CHARACTERISTICS1 (TA = 25°C, VCC = 5 V, ZL = 50 Ω)

DESCRIPTION

The UPC2766GR Silicon MMIC Wideband IQ Demodulatorwas manufactured with the NESAT III MMIC process. TheNESAT III process produces transistors with fT approaching20 GHz. The device was designed specifically for digital videoand data receivers. The IC consists of a wide band RFamplifier, Gain Control amplifier, dual balanced mixers, LObuffers, and I & Q output buffer amplifiers.

NEC's stringent quality assurance and test procedures en-sure the highest reliability and performance.

1

2

3

4

5

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

I BiasTrim

GND (RF)

RFin

RFin

VAGC

VCC (IFI)

Q Bias Trim

I out

I out

GND (IFI )

LO (I)

LO (I)

LO (Q)

LO (Q)

GND(IFQ)

Qout

Qout

VCC (RF)

VCC (IFQ)

GND(RF)

WIDEBAND IQ DEMODULATORFOR DIGITAL RECEIVERS

Notes:1. fRF = 480 MHz, fIF = 40 MHz, PLO = -10 dBm, PRF = -30 dBm, VAGC = 0 V, fRF > fLO unless otherwise specified.2. RF Bandwidth defined as 3 dB down from response at fRF = 40 MHz.3. IF Bandwidth defined as 3 dB down from response at fIF = 10 MHz.

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SYMBOLS PARAMETERS UNITS RATINGS

VCC Supply Voltage V 6

PD Power Dissipation2 mW 430

TOP Operating TemperatureRange °C -40 to +85

TSTG Storage Temperature °C -55 to +150

RECOMMENDEDOPERATING CONDITIONS

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS PARAMETERS UNITS MIN TYP MAX

VCC Supply Voltage V 4.5 5.0 5.5

TOP Operating Temperature °C -40 +25 +85

UPC2766GR

Notes:1. Operation in excess of any one of these parameters may

result in permanent damage.2. Mounted on a 50x50x1.6 mm epoxy glass PWB (TA = 85°C).

Pin Pin Pin Voltage Function and Explanation Equivalent CircuitNo. Name Typ. (V)

1 I Trim 4.2 Limiter control for I-IF output

2 VCC (IFI) 5.0 Power supply pin of I-Mixer.

3 VCC (RF) 5.0 Power supply pin of RF and AGC block.

4 GND (RF) 0.0 Ground pin of RF and AGC block.

5 RFIN 2.6 RF input pin. For single-endedapplications, Pin 6 should be bypassedto GND via a capacitor.

6 RFIN 2.6

7 GND (RF) 0.0 Ground pin of RF and AGC block.

8 VAGC 0~5 Gain control pin.• VAGC = 0 V: Maximum Gain• VAGC = 5 V: Maximum Attenuation

9 VCC (IFQ) 5.0 Power supply pin of Q-Mixer

10 Q Trim 4.2 Limiter control for Q-IF output.

1

To next block

5 6

8

VCC

10

VCC

PIN FUNCTIONS

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Pin Pin Pin Voltage Function and Explanation Equivalent CircuitNo. Name Typ. (V)

11 Qout 3.3 Q-IF output pin. Output impedance is approximately 55 Ω.Output load should be approximately 250 Ω. Pin 11and pin 12 are differential outputs. For single-ended

12 Qout 3.3 applications, terminate unused output withequivalent impedance.

13 GND (IFQ) 0.0 Ground pin of Q-IF block.

14 LO (Q) 2.2 Oscillator input of Q-Mixer. For single-endedapplications, pin 15 should be bypassed toGND via a capacitor.

15 LO (Q) 2.2

16 LO (I) 2.2 Oscillator input of I-Mixer. For single-endedapplications, pin 16 should be bypassed toGND via a capacitor.

17 LO (I) 2.2

18 GND (IF I) 0.0 Ground pin of I-IF block.

19 IOUT 3.3 I-IF output pin. Output impedance is approximately 55 Ω.Output load should be approximately 250 Ω. Pin 19 andpin 20 are differential outputs. For single-ended applications,terminate unused output with equivalent impedance.

20 Iout 3.3

12 11

Fromblockbefore

+ _

14 15

17 16

19 20

Fromblock before

+ _

PIN FUNCTIONS

UPC2766GR

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-40 -30 -20 -10 0 10

5

0

-5

-10

-15

-20

-25

fRF = 480 MHzfIF = 40 MHzVAGC = 0 VO

utpu

t Pow

er, P

OU

T (

dBm

)

Input Power, PIN (dBm)

TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified)

30

25

20

15

10

5

010 100 1000

+85˚C-40˚C

+25˚C

fIF = 40 MHzVAGC = 0 V

30 50 100 300

30

25

20

15

10

5

0

fRF = 480 MHzVAGC = 0 V

+25˚C

-40˚C

+85˚C

IF Frequency (MHz)

Con

vers

ion

Gai

n, C

G (

dB)

Con

vers

ion

Gai

n, C

G (

dB)

CONVERSION GAIN vs.RF FREQUENCY AND TEMPERATURE

CONVERSION GAIN vs.IF FREQUENCY AND TEMPERATURE

RF Frequency (MHz)

OUTPUT POWER vs. INPUT POWER

0

-10

-20

-30

-40

-50

-60-40 -30 -20 -10 0 10

fRF1 = 480 MHzfRF2 = 490 MHzfLO = 440 MHzVAGC = 1 V

POUT

IM3

Out

put P

ower

and

IM3

(dB

m)

OUTPUT POWER AND IM3vs. INPUT POWER

RF Input Power (dBm)

UPC2766GR

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UPC2766GR

TYPICAL PERFORMANCE CURVES (TA = 25°C, fIF = 40 MHz, unless otherwise specified.)

LO L

eaka

ge (

dBc)

PLO = -10 dBm-20

TA = +85˚C

TA = -40˚C

TA = +25˚C

-30

-40

-50

-60

-700 500 1000

LO L

eaka

ge (

dBc)

PLO = -10 dBm

TA = -40˚CTA = +85˚C

TA = +25˚C

10

0

-10

-20

-30

-400 500 1000

LO Frequency (MHz) LO Frequency (MHz)

LO LEAKAGE TO RF PORT vs.LO FREQUENCY AND TEMPERATURE

LO LEAKAGE TO IF PORT vs.LO FREQUENCY AND TEMPERATURE

fRF1 = 480 MHzfRF2 = 490 MHzfLO = 440 MHzPIN = -20 dBm eachPLO = -10 dBm

0

-10

-20

-40

-30

-30

0 20-50

-20 -10 10Thi

rd O

rder

Inte

rmod

ulat

ion

Dis

tort

ion,

IM3

(dB

c)

Thi

rd O

rder

Inte

rmod

ulat

ion

Dis

tort

ion,

IM3

(dB

c) 0

-10

-20

-30

-40

-500 1 2 3 4 5

fRF1 = 480 MHzfRF2 = 490 MHzfLO = 440 MHzPIN = -20 dBm each

THIRD ORDER INTERMODULATIONvs. CONVERSION GAIN

THIRD ORDER INTERMODULATIONvs. AGC VOLTAGE

AGC Voltage, VAGC (V)Conversion Gain, CG (dB)

2

1

0

-1

-210 100 1000

RF Frequency (MHz)

IQ A

mpl

itude

Bal

ance

, ∆G

(dB

)

IQ AMPLITUDE BALANCEvs. RF FREQUENCY

IQ P

hase

Bal

ance

, ∆Φ

(°)

RF Frequency (MHz)

3

5

4

2

1

0

-1

-2

-4

-3

-510 100 1000

-40˚C

+25˚C+85˚C

IQ PHASE BALANCE vs.RF FREQUENCY AND TEMPERATUREDIS

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UPC2766GR

TYPICAL PERFORMANCE CURVES (TA = 25°C)

CONVERSION GAIN vs. AGC VOLTAGE

30

20

10

0

-10

-20

-300 1 2 3 4 5

fRF = 480 MHzfIF = 40 MHzPRF = -30 dBmPLO = -10 dBm

AGC Voltage, VAGC (V)

Con

vers

ion

Gai

n, C

G (

dB)

Q out

I out

I-LO Buffer Amp.

I-IF Amp.

Q-IF Amp.

Q-LO Buffer Amp.

I-MIX.

Q-MIX.

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2

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10 11

12

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16

17

18

19

20

RF AGC

RF Pre-Amp.

AGC Cont.

VAGC

VCC

RF IN

300 nH 250Ω

8 pF250Ω

OSC IN

In Phase Power Divider

300 nH

250Ω

250Ω

8 pF

TEST CIRCUIT

Notes:1. All capacitors are 1000 pF unless odtherwise noted.2. Low Pass Filter on I and QOUT minimizes LO Leakage.

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UPC2766GR

RECOMMENDED PCB LAYOUT (Units in mm)

1.27

7.17

0.35 0.65

4.63

C1 LO Input

C2

C2R

R

Q out

I out

0.01 µf

0.01 µf

I-LO Buffer Amp.

I-IF Amp.

Q-IF Amp.

Q-LO Buffer Amp.

I-MIX.

Q-MIX.

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2

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9

10 11

12

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17

18

19

20

VCC

RF AGC

RF Pre-Amp.

AGC Cont.

VAGC

VCC

RF IN50K(Optional)

I OUT

Q OUTR1

C1

R1

Notes:1. All capacitors are 1000 pF unless otherwise noted.2. Phase shifter element values

XC1 << R @ fLO

XC2 = R @ fLO

3. Set R1 of IOUT and QOUT ports to match the load ofIOUT and QOUT ports

APPLICATION CIRCUIT

1. I BIAS TRIM2. VCC (IFI)3. VCC (RF)4. GND (RF)5. RF IN6. RF IN7. GND (RF)8. VAGC

9. VCC (IFQ)10. Q BIAS TRIM

LEAD CONNECTIONS

11. Q OUT12. Q OUT13. GND (IFQ)14. LOQ

15. LOQ

16. LOI

17. LOI

18. GND (IFI)19. I OUT20. I OUT

Lead Material: Alloy 42Lead Plating: Lead Tin Alloy

OUTLINE DIMENSIONS (Units in mm)

PACKAGE OUTLINE SSOP 20

PART NUMBER QUANTITY

UPC2766GR-E1 2500/Reel

Note:Embossed Tape, 12 mm wide.

ORDERING INFORMATION

EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

11/14/2000DATA SUBJECT TO CHANGE WITHOUT NOTICE

20 11

1 107.00 MAX

6.4±0.2

4.4±0.11.0±0.1

0.5±0.2

0.151.8 MAX

1.5 ±0.1

0.1 ±0.1

0.22

0.65 0.575 MAX

N

XXXX = Lot/Date Code

+0.10- 0.05

+0.10- 0.05

NECC2766G

XXXXX

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