VCC RL vout vin Transistorbandi.chungbuk.ac.kr/~ysk/1MOSFET.pdf · · 2009-06-051 2 170ÊK...

- 1 -

VCC

RL

vin

vout

Transistor

v

+

-

Resistor

i=v/r

Trans-Resistor=Transistor

+

-

i= vc/rt = gm vc

vc

+

-

i=gm vcvc rc

r c =r for BJTs=∞ for MOSFETs

gm = I CVT for BJTs

= IDS(VGS-VTH)/2 for MOSFETs

- 2 -

μμμμ

ΔΔΔΔ

- 3 -

V GS -V FB =V oxide+V semi= Q GC ox

+[2 f+V(y)]= -Q d-Q nC ox

+[2 f +V(y)]Q n =-C ox [ V GS -V FB -2 f -V(y)] -Q d (y)

Q d =-qN A W =-C ox 2 f +V SB +V(y)Q d≈-C ox 2 f +V SB

I DS =- n C oxV DS

0 Q n(y) dV

I DS = n C oxWL [ (V GS -V TH)V DS -V2DS/2]

V DS≤V GS -V TH

I DS = 12 n C oxWL (VGS -VTH) 2

V DS > V GS -V TH

V TH =V FB+2 f+ - Q dC ox=V FB+2 f+ 2 f

LEVEL = 1, KP(= nC ox), TOX(C ox = TOX ), VT0( =V TH0), PHI(= 2 f )GAMMA( = ), LAMBDA( = )

- 4 -

Q d =-qN A W =-C ox 2 f +V SB +V(y)

I DS = n C oxWL [ (V GS -V fb -2 f - VDS2 )V DS

- 23 { (V GS+2 f+V SB) 3/2-(2 f+V SB) 3/2}]

Q d =-C ox 2 f +V SB +V(y)≈-C ox [ 2 f +V SB+ ⋅V(y)]= 0.5

2 f +VSB

- 5 -

g m = I DS(V GS-V TH)/2= 2 nC oxW/LI DS= nC oxW/L( V GS-V TH)

V TH = 0.7V, KP = 170 A/V 2

i DS = 12 nC oxWL (VGS +v gs -V TH) 2

v OUT =VDD-R Li DS=3.3-1k⋅ 12 170 100 m0.6 m (0.3+v gs) 2

=2-8.5v gs-14.2v2gs=V OUT+v outv out =-8.5v gs -14.2v2gs≈-8.5 v gs v2gs

A v = v outv gs=- 8.5 V/V

i DS = 12 n C oxWL [ (VGS +v gs)-VTH] 2

= 12 nC oxWL (VGS-VTH) 2(1+ v gsVGS-VTH

) 2

≈I DS(1+2 v gsVGS-VTH)

= I DS + i ds

∴i ds = I DS(VGS-VTH)/2 v gs ≡ gmv gs

- 6 -

V GS -V FB= -Q d-Q nC ox+[ 2 f +V( y)]

VTH = V FB +2 f - Q d( s = 2 f +V SB)C ox

Q d =-qNAW=- 2 sqNA(2 f +V SB)VTH = VTH0 + ( 2 f +V SB- 2 f)

VTH0 = V FB +2 F - Q d( s = 2 f)C oxand = 2 sqNA/C ox

g mb =- i dsv sb=- I DSV SB

= nC oxWL (V GS -V TH)( V THV SB

)

gmb = gm 2 2 f +VSB= gm

≈0.1 - 0.3

- 7 -

V DS≥V GS - V TH

IDS = 12 nCox

WL (VGS - VTH)2(1 + VDS)

ro ≡ [ IDSVDS ]-1

VGS = constant = [ nCox2 WL (VGS - VTH)2]-1

r o = 1I DS= VAI DS

- 8 -

I DS = 12 nC oxWL (VGS -VTH) 2

IDS =ID0eVGSnVT

( = 1n )≡ V ChannelV GS= 11+C d/C ox

IDS = ID0eVChannelVT = ID0e

VGSnVT

≡ ΔΔΔΔ

S≡ dVGSd( log IDS) = ln(10) dVGSd( ln IDS) = ln(10) kTq n = ln(10) kTq [1+Cd/Cox]

- 9 -

Cgs, Cgd, Cgb

Csb, Cdb

Cgs = 12 WLCox+CGSO⋅W

Cgd = 12 WLCox +CGDO⋅W

Cgb = CGBO⋅L

Cgs = 23 WLCox+CGSO⋅W

Cgd = CGDO⋅WCgb = CGBO⋅L

C gs = CGSO⋅WC gd = CGDO⋅WC gb = WLC ox +CGBO⋅LC ox = TOX CGSO⋅W, CGDO⋅W, CGBO⋅L

- 10 -

Cdb = CJ⋅AD(1+ VDBPB )MJ

+ CJSW⋅PD(1+ VDBPBSW )MJSW

Csb= CJ⋅AS(1+ VSBPB )MJ

+ CJSW⋅PS(1+ VSBPBSW )MJSW

- 11 -

AS = AD = 6×14 = 84 m 2PS=PD=2(6+14)=40 m

C sb =C db=C sb, bottom+C sb, sidewall= CJ⋅AS

(1+ V SBPB ) MJ+ CJSW⋅PS

(1+ V SBPBSW ) MJSW=17.6fF

C gb = CGBO⋅L = 3.8fFC gd = CGDO⋅W = 5.3fF ( sat.)C gs = 23 C 'oxWL+CGSO⋅W= 75fF ( sat.)

- 12 -

I o = gmVgs - sCgdVgsI o ≃ gmVgsVgs = I i/s(Cgs + Cgd)IoI i

= gms(Cgs + Cgd)

| I oI i( = T)|=1 T = gm/(Cgs + Cgd)

fT = gm2 (Cgs + Cgd)

- 13 -

VTH ≈ VFB + PHI + K1 PHI + VSB - K2(PHI + VSB)

KPn = MUZ*Cox

IDS = MU0'[1 + U0Z'(VGS - VTHN)]

Cox' W-DWL-DL(1 + U1Z'L-DL VDS) [ (VGS - VTHN)VDS -

a2 V2DS]

IDS ≈ MUZ⋅CoxWL [ (VGS - VTH)VDS -

V2DS2 ]IDS =

MUZ Cox W2L (VGS - VTH)2[1 + ( c + m)VDS]

c m

IDS ≈ MUZ CoxWL ( kTq )2e1.8e q(VGS - VTH)/N'kT(1 - e -qVDS /kT)

- 14 -

VTH = VTH0 + K1( S + VSB - S) + K2VSB + K1( 1 +

NLXLeff - 1) S - VTH

V TH

IDS = W effC WoxL 1

1 + VDS/LEcrit

[ VGS - VTH - VDS2 ]VDS

IDS = W⋅v sat⋅Cox(VGS - VTH - VDSsat)[1 + VDS - VTH - VDSsatVA ]

IDS = eff WL ( kTq )2Cd e (VGS - VTH - Voff)q/nkT(1 - e -qVDS /kT)

- 15 -

***** MOSIS 0.5um Parameters *****

* Level 3 SPICE model for CMOS14TB 0.5 um

.MODEL CMOSN5 NMOS LEVEL=3 PHI=0.700000

+ TOX=9.6000E-09 XJ=0.200000U TPG=1

+ VTO=0.7118 DELTA=2.3060E-01 LD=2.9830E-08 KP=1.8201E-04

+ UO=506.0 THETA=1.9090E-01 RSH=1.8940E+01 GAMMA=0.6051

+ NSUB=1.4270E+17 NFS=7.1500E+11 VMAX=2.4960E+05 ETA=2.5510E-02

+ KAPPA=1.8530E-01 CGDO=9.0000E-11 CGSO=9.0000E-11

+ CGBO=3.7295E-10 CJ=6.02E-04 MJ=0.805 CJSW=2.0E-11

+ MJSW=0.761 PB=0.99

* Weff = Wdrawn - Delta_W

* The suggested Delta_W is 3.5700E-07

* Level 4 (BSIM) SPICE model for CMOS14TB 0.5 um

.MODEL CMOSNB5 NMOS LEVEL=4

+ vfb=-9.65360E-01 lvfb= 4.11254E-02 wvfb=-1.21737E-01

+ phi= 9.02436E-01 lphi= 0.00000E+00 wphi= 0.00000E+00

+ k1= 9.33674E-01 lk1= -8.15872E-02 wk1= 2.03526E-01

+ k2= 7.39228E-02 lk2= 1.48295E-02 wk2= 5.89097E-02

+ eta=-2.77969E-03 leta= 1.12296E-02 weta= 1.25263E-03

+ muz= 4.71133E+02 dl= 1.57937E-001 dw= 4.09563E-001

+ u0= 1.98427E-01 lu0= 1.54850E-01 wu0= -1.05429E-01

+ u1= 3.39403E-02 lu1= 3.59469E-02 wu1= -5.00497E-03

+ x2mz=1.25728E+01 lx2mz=-1.24115E+01 wx2mz=1.77657E+01

+ x2e=-9.95217E-05 lx2e=-5.16949E-03 wx2e= 2.83253E-03

+ x3e=-4.27269E-04 lx3e=-1.62632E-03 wx3e=-1.60797E-03

+ x2u0=-9.02747E-04 lx2u0=-1.66946E-02 wx2u0=2.48458E-02

+ x2u1=-7.29822E-04 lx2u1=2.38803E-03 wx2u1=-9.76918E-04

+ mus=5.36631E+02 lmus=2.18647E+01 wmus=4.43373E+00

+ x2ms=5.97403E+00 lx2ms=-7.67105E+00 wx2ms=2.19614E+01

+ x3ms=7.60054E+00 lx3ms=4.73779E+00 wx3ms=2.59952E+00

+ x3u1=1.75532E-02 lx3u1=-1.21628E-03 wx3u1=-5.95548E-04

+ tox=9.60000E-003 temp=2.70000E+01 vdd=3.30000E+00

+ cgdo=4.26077E-010 cgso=4.26077E-010 cgbo=4.01709E-010

+ xpart=1.00000E+000

+ n0=1.00000E+000 ln0=0.00000E+000 wn0=0.00000E+000

+ nb=0.00000E+000 lnb=0.00000E+000 wnb=0.00000E+000

+ nd=0.00000E+000 lnd=0.00000E+000 wnd=0.00000E+000

+ rsh=2 cj=6.02e-04 cjsw=2.0e-11 js=1e-08 pb=0.99

+ pbsw=0.99 mj=0.805 mjsw=0.761 wdf=0 dell=0

* Level 3 SPICE model for CMOS14TB 0.5 um

.MODEL CMOSP5 PMOS LEVEL=3 PHI=0.700000

+ TOX=9.6000E-09 XJ=0.200000U TPG=-1

+ VTO=-0.9016 DELTA=4.2020E-01 LD=4.3860E-08 KP=4.1582E-05

- 16 -

+ UO=115.6 THETA=3.7990E-02 RSH=9.0910E-02 GAMMA=0.4496

+ NSUB=7.8780E+16 NFS=6.4990E+11 VMAX=2.3130E+05 ETA=2.8580E-02

+ KAPPA=9.9270E+00 CGDO=9.0000E-11 CGSO=9.0000E-11


+ MJSW=0.222 PB=0.90


* The suggested Delta_W is 3.4860E-07

* Level 4 (BSIM) SPICE model for CMOS14TB 0.5 um

.MODEL CMOSPB5 PMOS LEVEL=4

+ vfb=-2.80568E-01 lvfb=5.70163E-02 wvfb=-6.17493E-02

+ phi=8.14689E-01 lphi=0.00000E+00 wphi=0.00000E+00

+ k1=4.52973E-01 lk1=-9.19899E-02 wk1=1.20834E-01

+ k2=-9.42157E-03 lk2=-2.25562E-03 wk2=3.13315E-02

+ eta=-7.03956E-03 leta=1.92833E-02 weta=5.45445E-05

+ muz=1.36047E+02 dl=1.85988E-001 dw=4.32366E-001

+ u0=1.93813E-01 lu0=6.02231E-02 wu0=-4.90734E-02

+ u1=8.52399E-03 lu1=2.60545E-02 wu1=-6.34371E-03

+ x2mz=7.96258E+00 lx2mz=-2.15761E+00 wx2mz=2.30663E+00

+ x2e=4.37912E-04 lx2e=-1.60046E-03 wx2e=-3.86750E-04

+ x3e=-3.52725E-04 lx3e=-4.09096E-04 wx3e=-2.53471E-03

+ x2u0=1.18873E-02 lx2u0=-4.81760E-03 wx2u0=8.80040E-03

+ x2u1=2.26591E-03 lx2u1=7.96828E-04 wx2u1=-4.70527E-04

+ mus=1.44421E+02 lmus=1.63665E+01 wmus=-7.31189E-01

+ x2ms=8.18970E+00 lx2ms=-1.25158E+00 wx2ms=3.62233E+00

+ x3ms=7.29640E-01 lx3ms=1.15206E+00 wx3ms=1.02833E+00

+ x3u1=-3.51521E-03 lx3u1=-3.12374E-03 wx3u1=3.48134E-03

+ tox=9.60000E-003 temp=2.70000E+01 vdd=3.30000E+00


+ xpart=1.00000E+000

+ n0=1.00000E+000 ln0=0.00000E+000 wn0=0.00000E+000

+ nb=0.00000E+000 lnb=0.00000E+000 wnb=0.00000E+000

+ nd=0.00000E+000 lnd=0.00000E+000 wnd=0.00000E+000

+ rsh=2.1 cj=9.34e-04 cjsw=2.41e-10 js=1e-08 pb=0.90

+ pbsw=0.90 mj=0.491 mjsw=0.222 wdf=0 dell=0

***** MOSIS 2.0um Parameters *****

* Level 2 model nchan model for CN20

.MODEL CMOSN NMOS(LEVEL=2 PHI=0.600000 TOX=4.3500E-08 XJ=0.2U TPG=1

+ VTO=0.8756 DELTA=8.5650E+00 LD=2.3950E-07 KP=4.5494E-05

+ UO=573.1 UEXP=1.5920E-01 UCRIT=5.9160E+04 RSH=1.0310E+01

+ GAMMA=0.4179 NSUB=3.3160E+15 NFS=8.1800E+12 VMAX=6.0280E+04

+ LAMBDA=2.9330E-02 CGDO=2.8518E-10 CGSO=2.8518E-10


+ MJSW=0.178543 PB=0.800000)

- 17 -


* The suggested Delta_W is -4.0460E-07

* Level 2 model pchan model for CN20

.MODEL CMOSP PMOS (LEVEL=2 PHI=0.600000 TOX=4.3500E-08 XJ=0.2U TPG=-1

+ VTO=-0.8889 DELTA=4.8720E+00 LD=2.9230E-07 KP=1.5035E-05

+ UO=189.4 UEXP=2.7910E-01 UCRIT=9.5670E+04 RSH=1.8180E+01

+ GAMMA=0.7327 NSUB=1.0190E+16 NFS=6.1500E+12 VMAX=9.9990E+05

+ LAMBDA=4.2290E-02 CGDO=3.4805E-10 CGSO=3.4805E-10


+ MJSW=0.244194 PB=0.800000)


* The suggested Delta_W is -3.6560E-07

* BSIM model for n-channel CN20

.MODEL CMOSNB NMOS (LEVEL=4

+ VFB=-9.73820E-01 LVFB=3.67458E-01 WVFB=-4.72340E-02

+ phi=7.46556E-01 lphi=-1.92454E-24 wphi=8.06093E-24

+ k1=1.49134E+00 lk1=-4.98139E-01 wk1=2.78225E-01

+ k2=3.15199E-01 lk2=-6.95350E-02 wk2=-1.40057E-01

+ eta=-1.19300E-02 leta=5.44713E-02 weta=-2.67784E-02

+ muz=5.98328E+02 dl=6.38067E-001 dw=1.35520E-001

+ u0=5.27788E-02 lu0=4.85686E-02 wu0=-8.55329E-02

+ u1=1.09730E-01 lu1=7.28376E-01 wu1=-4.22283E-01

+ x2mz=7.18857E+00 lx2mz=-2.47335E+00 wx2mz=7.12327E+01

+ x2e=-3.00000E-03 lx2e=-7.20276E-03 wx2e=-5.57093E-03

+ x3e=3.71969E-04 lx3e=-3.16123E-03 wx3e=-3.80806E-03

+ x2u0=1.30153E-03 lx2u0=3.81838E-04 wx2u0=2.53131E-02

+ x2u1=-2.04836E-02 lx2u1=3.48053E-02 wx2u1=4.44747E-02

+ mus=7.79064E+02 lmus=3.62270E+02 wmus=-2.71207E+02

+ x2ms=-2.65485E+00 lx2ms=3.68637E+01 wx2ms=1.12899E+02

+ x3ms=1.18139E+01 lx3ms=7.24951E+01 wx3ms=-5.25361E+01

+ x3u1=2.12924E-02 lx3u1=5.85329E-02 wx3u1=-5.29634E-02

+ tox=4.35000E-002 temp=2.70000E+01 vdd=5.00000E+00


+ xpart=1.00000E+000

+ n0=1.00000E+000 ln0=0.00000E+000 wn0=0.00000E+000

+ nb=0.00000E+000 lnb=0.00000E+000 wnb=0.00000E+000

+ nd=0.00000E+000 lnd=0.00000E+000 wnd=0.00000E+000

+ rsh=27.9 cj=1.037500e-04 cjsw=2.169400e-10 js=1.0e-08 pb=0.8

+ pbsw=0.8 mj=0.66036 mjsw=0.178543 wdf=0)

* dell=0)

* BSIM model for p-channel CN20

.MODEL CMOSPB PMOS ( LEVEL=4

- 18 -

+ vfb=-2.65334E-01 lvfb=6.50066E-02 wvfb=1.48093E-01

+ phi=6.75823E-01 lphi=-1.61406E-24 wphi=8.03764E-24

+ k1=5.68962E-01 lk1=3.88845E-02 wk1=-5.33948E-02

+ k2=-5.52938E-02 lk2=1.17906E-01 wk2=-6.89149E-02

+ eta=-1.51784E-02 leta=5.87976E-02 weta=-7.51570E-04

+ muz=2.10669E+02 dl=8.44240E-001 dw=1.62551E-001

+ u0=1.04713E-01 lu0=5.50950E-02 wu0=-7.56659E-02

+ u1=1.46638E-02 lu1=2.13581E-01 wu1=-1.22509E-01

+ x2mz=8.76354E+00 lx2mz=-3.64793E+00 wx2mz=4.30934E+00

+ x2e=-2.13631E-03 lx2e=-2.94140E-03 wx2e=-2.48293E-03

+ x3e=2.78813E-04 lx3e=-1.60711E-03 wx3e=-4.57237E-03

+ x2u0=3.93706E-03 lx2u0=-5.66051E-04 wx2u0=5.69621E-04

+ x2u1=1.07707E-04 lx2u1=8.85125E-03 wx2u1=1.71537E-03

+ mus=2.06464E+02 lmus=1.39151E+02 wmus=-4.95671E+01

+ x2ms=5.86401E+00 lx2ms=6.98887E+00 wx2ms=5.55782E+00

+ x3ms=-2.03430E-01 lx3ms=1.16170E+01 wx3ms=-3.44342E+00

+ x3u1=-1.17893E-02 lx3u1=5.72098E-04 wx3u1=8.29791E-03

+ tox=4.35000E-002 temp=2.70000E+01 vdd=5.00000E+00


+ xpart=1.00000E+000

+ n0=1.00000E+000 ln0=0.00000E+000 wn0=0.00000E+000

+ nb=0.00000E+000 lnb=0.00000E+000 wnb=0.00000E+000

+ nd=0.00000E+000 lnd=0.00000E+000 wnd=0.00000E+000

+ rsh=54.7 cj=3.245600e-04 cjsw=2.543000e-10 js=1.0e-08 pb=0.8

+ pbsw=0.8 mj=0.60438 mjsw=0.244194 wdf=0)

* dell=0)

VCC RL vout vin Transistorbandi.chungbuk.ac.kr/~ysk/1MOSFET.pdf · · 2009-06-051 2 170ÊK...

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Transcript of VCC RL vout vin Transistorbandi.chungbuk.ac.kr/~ysk/1MOSFET.pdf · · 2009-06-051 2 170ÊK...