UNECS-2000UNECS-3000A

Compact High-Speed Spectroscopic Ellipsometer

Components Division,

ULVAC, Inc

UNECS series

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UNECS （小型）資料

UNECS-3000AΦ300mm auto-mapping type

UNECS-2000Φ200mm motorized type

　 UNECS series is the most advanced ellipsometer which utilizes high-order retarders. It achieve high-speed measurement, downsizing of sensor head and excellent cost performance, which are difficult for other conventional models. It features a motorized stage and makes high-precision measurement with simple operation.

Application

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UNECS （小型）資料

Industry, field Measurement object

Semiconductor

High-k SiO2, Si3N4, SiNx, SiON, HfO2, Ta2O5...（ ）Low-k SiOC, SiOF...（ ）Lithographic AR, BARC, SiOxNy, Resists, Mask...（ ）Semiconductor epitaxial Poly-Si, a-Si, SOI, SiGe, OPO, SiC, GaN...（ ）Ultrathin metal film AL, Cu, Cr, No, W, Pt, TiN, TaN, A Cu...（ ｌ ）

Display

TFT ITO, SiNx, a-Si, Resists, SiOx, Polymide...（ ）CF RGB, Polymide, ITO, CrO2...（ ）OLED A 3, CuPc, Organic Layers...（ｌＱ ）PDP Mgo, ITO, AL2O3...（ ）

Solar cells Thin- film TCO, a- Si, μ c- Si , CIGS（ ）

Optics Hi/ Lo Stacks, Antireflection coating, Protective film, Decorative coating

Storage AL2O3, Ta2O5, DLC, MO materials, AlN

Communication SiOx, Al2O3, Ta2O5, TiO2

Measurement data example (SiO2, resists)

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UNECS （小型）資料

Measured

value*1)

Repeatability σ

SiO2 thickness 1.96 nm 0.03 nm

Measured value*1)

Repeatability σ

Resists thickness(Designed value 50nm)

50.95 nm 0.05 nm

Resists refractive index *2)

1.576 0.02

Measured

value*1)

Repeatability σ

Resists thickness(Designed value 50nm)

48.17 nm 0.72 nm

ＢＡＲＣ thickness(Designed value 65nm)

67.16 nm 0.76 nm

Measured

value*1)

Repeatability σ

Top coating thickness(designed value 30nm)

28.79 nm 0.05 nm

Top coating refractive index *2)

1.342 0.001

Si substrate

SiO2(1) SiO2 single-layer filmSi substrate

Resists(2) Resists single-layer film

Remarks: Repeatability is the standard deviation of 10 times consecutive measurements (1σ).

Si substrate

ＢＡＲＣ

Resists(3) Resists/ BARC 2 layer film

Si substrate

ＢＡＲＣ

Resists

Top coating(4) Resists 3 layer film

（ thickness and refractive index simultaneous measurement ）

（ thickness and refractive index simultaneous measurement ）

Remarks: ‘Dektak’ is ULVAC bland stylus thickness gauge.

(1) OLED ：　 Alq3 ／ Glass single-layer film

(2) Thin-film PV ： SiO2 ／ μc-Si ／ Glass 3 layer filmGlass

substrate

μc-Si

SiO2

Glass substrate

Alq3

Sample A B C

Measurement object μc-Si SiO2

μc-Si 　　 ＋SiO2

μc-Si SiO2 μc-Si 　

　　＋SiO2

μc-Si SiO2 μc-Si 　

　　＋SiO2

UNECS measured

value 509.9 18.2 528.1 523.2 13.8 537.0 518.8 21.7 540.4

Dektak measured

value - - 525.4 - - 541.4 - - 546.3

Sample A B C D

Measurement object

Refractive index

Thickness Refractive index

Thickness Refractive index

Thickness Refractive index

Thickness

N D(nm) N D(nm) N D(nm) N D(nm)

UNECS measured value 1.712 118.5 1.728 115.8 1.731 115.0 1.729 112.1

Dektak measured value － 118.4 － 111.8 － 116.1 － 109.3

Measurement data example (OLED, PV)

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UNECS （小型）資料

Measurement data example (Single-layer film)

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UNECS （小型）資料

Measured

value*1)

Repeatability σ

SiO2 thickness 1.96 nm 0.03 nm

Measured value*1)

Repeatability σ

Resists thickness(Designed value 50nm)

50.95 nm 0.05 nm

Resists refractive index *2)

1.576 0.02

Si substrate

SiO2(1) SiO2 single-layer filmSi substrate

Resists

110

105

100

95

90

85

80

[d

eg

]

720680640600Wavelength [nm]

35

30

25

20

15

10

5

[d

eg

]

Experiment Fitted curve

180

175

170

165

160

155

150

[d

eg

]

720680640600Wavelength [nm]

35

30

25

20

15

10

5

[de

g]

Experiment Fitted curve

(2) Resists single-layer film（ thickness and refractive index

simultaneous measurement ）

Remarks: Repeatability is the standard deviation of 10 times consecutive measurements (1σ).

Measurement data example (Multilayer film)

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UNECS （小型）資料

Measured value*1)

Repeatability σ

Resists thickness(Designed value 50nm)

48.17 nm 0.72 nm

ＢＡＲＣ thickness(Designed value 65nm)

67.16 nm 0.76 nm

Measured

value*1)

Repeatability σ

Top coating thickness(Designed value 30nm)

28.79 nm 0.05 nm

Top coating refractive index *2)

1.342 0.001

Si substrate

ＢＡＲＣ

Resists

Si substrate

ＢＡＲＣ

Resists

Top coating

350

300

250

200

150

100

50

0

[deg

]720680640600

Wavelength [nm]

100

80

60

40

20

[deg]

Experiment Fitted curve80

60

40

20

0

[d

eg

]

720680640600Wavelength [nm]

100

80

60

40

20

[d

eg

]

Experiment Fitted curve

(2 layer simultaneous measurement)

(3) Resists/BARC 2 layer film (4) Resists 3 layer film(Top coating thickness and refractive index

simultaneous measurement)

Remarks: Repeatability is the standard deviation of 10 times consecutive measurements (1σ).

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The film thickness distribution can be visually checked since the measurement result is displayed in 2D color map.

R-θ mode 106 points measurement of SiO2 film on Φ300mm Si substrate

　　　　　　　　

X-Y mode R-θ mode

Evaluation time can be significantly reduced by high-speed measurement and auto mapping function.

Auto mapping function

120sec (including stage travelling time)

Less than 1/5 of other conventional models!

UNECS-3000A has Φ300mm auto mapping function. The film thickness distribution on the substrate can be measured quickly and automatically by the combination of high-speed measurement and auto mapping function.

①Measurement positionSet the measurement coordinate. ・ R-θ (Radius-angle) mode ・ X-Y (Vertical-horizontal) mode

②Measurement resultDisplay measurement result (thickness, refractive index, etc) real time.

①②

Auto mapping function

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UNECS （小型）資料

UNECS-3000A has Φ300mm auto R-θ stage. The positions set in the program are measured by auto mapping. The film thickness distribution on the substrate can be measured quickly and automatically by the combination of high-speed measurement and auto mapping function.

Unload positionLoad position

R-θ stage which has position pins and a vacuum chuck function for φ100, 125, 150, 200, 300mm wafer.

Auto mapping function

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UNECS （小型）資料

Measurement repeatability

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UNECS （小型）資料

Si substrate

SiO2

Standard sample(SiO2/Si)

Thickness : 205.7±0.7nm Refractive index: 1.460

(wavelength: 633nm)

Repeat No. Thickness (nm)Refractive index(633nm)

1 205.6 1.4592 205.7 1.4593 205.5 1.4584 205.6 1.4595 205.5 1.4596 205.6 1.4597 205.6 1.4598 205.7 1.4589 205.6 1.45910 205.6 1.458

Average 205.6 1.459Max 205.7 1.459Min 205.5 1.458

Standard deviation 0.050 0.0003Standard deviation (%) 0.02% 0.02%

Excellent measurement repeatability was achieved simultaneously with ultra high-speed measurement.

Material table file containing the optical constants of film or substrate is saved in advance. So users can easily edit and add material table files by themselves.

Material table file

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UNECS （小型）資料

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UNECS series is the high-speed spectroscopic ellipsometer which can evaluate quickly the thickness and the distribution of optical constants of thin film with high-speed measurement utilizing snapshot method and auto mapping function (*1).High-speed and high precision evaluation of the distribution is possible with simple recipe setting.High-speed measurement

Snapshot method measurement of spectroscopic ellipsometry using high-order retarders makes high-speed measurement which has not been possible by conventional method.

Compact designThe sizes of emitter and receiver of sensor unit are very small due to the spectroscopic ellipsometer by utilizing high-order retarders.

Excellent cost performanceOther than the main measurement unit with a Φ300mm(*1)/Φ200mm(*2) motorized stage, a laptop PC with data analysis software is configured as a standard accessory.

Customized material tableUsers can easily edit and add material table files by themselves.

Auto mapping function (*1)UNECS-3000A hasφ300mm auto mapping function.

Multilayer film measurementIt is possible to measure multilayer film thickness up to 6 layers.

Features of UNECS series

*1 ： UNECS-3000A*2 ： UNECS-2000

System configuration

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UNECS （小型）資料

■■ Standard system configurationMain unit (with motorized stage, light source, spectrometer inside)Controller (separate UNECS-3000A ）Laptop PC for control, data analysis software

■■OptionalStandard sample(100nm, SiO2/Si)

＋

Easy set-up by connecting main unit and PC by 2 of USB cables.Data analysis software is operable off line.

←UNECS-3000A

UNECS-2000→

Phase modulation type

～ V

Polarization characteristic of optical element by electrical control

Conventional method

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UNECS （小型）資料

Element rotation type

Polarization characteristic control by rotating optical element

Because mechanical or electrical polarization characteristic control,

The construction of sensor is complicated and the size is big.

Measurement time is long.

It is hard to miniaturize sensor and reduce measurement time!

UNECS adopts spectroscopic ellipsometry using high-order retarders, it makes instantaneous measurement at the snapshot since the spectrum which is obtained by polarization interference changes depending on the wavelength.

It needs no mechanical or electrical components for polarization control which other conventional models have.

Ultra high-speed measurement(Min.20ms~)

Compact design

Maintenance free

50mm

Measurement method of UNECS

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UNECS （小型）資料

Emitter ReceiverOptical fiber

AnalyzerRetarder 2 Sample

Spectrometer

Retarder 1

Light polarizer

Halogen lamp

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UNECS-2000 basic specificationUNECS-2000 basic specification

※1 The semitransparent film is the upper bound in the measurement film thickness.※2 When only the film thickness value is assumed to be a fitting parameter, and the SiO2 film (about 100nm) on the Si substrate is measured.※3 When SiO2 single-layer film on Si wafer is measured.※4 Standard deviation (1σ) when measuring it continuousness ten times.※5 Material data can be added by the user.

Spectroscopic ellipsometry

Transparent film and semitrnsparent film

530 750[nm]～Halogen lamp

100［Ｗ］φ 1mm (On the substrate: 1[mm]× 3[mm])

Film thickness: Maximum 6 layersFilm thickness & optical palameter: 1 layer (Only the top layer)

70 fix゜0.1［ｎｍ］1[ ] 2 μｎｍ ～ ［ ｍ］20ms 3000ms (setting is possible)～300ms

Si,SiO2,Si3N4,a- Si,BK7,Ta,Cu,Au,Ni,W, etc.

φ 210 mm［ ］φ 200 mm［ ］

ｒ 0 100 mm Motor drive～ ［ ］θ 0 359 Motor drive～ ［゚］Z 0 10 mm Manual～ ［ ］

①Ψ λ and Δ λ measurement（ ） （ ）②Setting of material data file③Calculation of film thickness(D), refractive index(N), extinction coefficient(K)

( type)× 2ＵＳＢＢNotebook type

500 )× 515( )× 410( ) mm PC is excludedＷ Ｄ Ｈ［ ］40 PC is excluded［ｋｇ］AC100[ ] Max 3[A] 50/ 60[Hz]Ｖ ，

Light source power

Spot size

Multilayer film measurement

Meausrement method

Light source

Wavelength range

Analysis time*2

Material data file*5

Sample stage size

Maximum sample size

Angle of incidence

Film thickness repeatability*2*3*4

Film thickness measurement range*3

Sampling time*3

Films for measurement*1

Control PC

Weight

Power

Stage

Software function

Interface

Dimentions

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・ Sampling time : 20ms ~ 　・ Analysis time : 300ms・ Sampling + Analysis: 320ms ~

Spectroscopic ellipsometry

Transparent and semitransparent film

530 750[nm]～Halogen lamp

φ 1mm (On substrate: 1[mm]× 3[mm])Film thickness: Max 6 layerFilm thickness and optical parameter: 1 layer (Only the toplayer)70 fix゜0.1［ｎｍ］1[ ] 2 μｎｍ ～ ［ ｍ］20ms 3000ms (setting is possible)～300ms

Si,SiO2,Si3N4,a- Si,BK7,Ta,Cu,Au,Ni,W, etc.

φ 310 mm［ ］φ 300 mm［ ］Maximum 200 points

R 0 150 mm Programable motor drive: resolution 0.1mm～ ［ ］θ 0 359.9 Programable motor drive: resolution 0.1°～ ［゚］Z 0 30 mm Motor drive: auto adjust～ ［ ］

Notebook typeMeasurement main unit: 450( )× 620( )× 370( ) mm PC is excludedＷ Ｄ Ｈ［ ］

Controller: 204(W)× 500 D)× 509 H)[mm]（ （Measurement main unit: 31［ｋｇ］Controller: 19［ｋｇ］

Dimentions

Weight

Auto multi points measurement

Stage

Control PC

Material data file*5

Sample stage size

Maximum sample size

Spot size

Multilayer film measurement

Angle of incidenceFilm thickness Repeatability*2*3*4

Film thickness measurement range*3

Measurement method

Film for measurement*1

Wavelength

Light source

Sampling time*3

Analysis time*2

UNECS-3000A basic specification

※1 The semitransparent film is the upper bound in the measurement film thickness.※2 When only the film thickness value is assumed to be a fitting parameter, and the SiO2 film (about 100nm) on the Si substrate is measured.※3 When SiO2 single-layer film on Si wafer is measured.※4 Standard deviation (1σ) when measuring it continuousness ten times.※5 Material data can be added by the user.