October 2008 Rev 17 1/18

18

STD5NM60STB8NM60 - STP8NM60

N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAK

Features

100% avalanche tested

HIgh dv/dt and avalanche capabilities

Low input capacitance and gate charge

Low gate input resistance

Application Switching applications

DescriptionThe MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Figure 1. Internal schematic diagram

Type VDSS RDS(on) ID Pw

STD5NM60 650 V < 1 Ω 5 A 96 W

STD5NM60-1 650 V < 1 Ω 5 A 96 W

STB8NM60 650 V < 1 Ω 5 A 100 W

STP8NM60 650 V < 1 Ω 8 A 100 W

STP8NM60FP 650 V < 1 Ω 8 A(1) 30 W

13

1

3

32

11

23

12

3

D²PAK

DPAKTO-220FP

IPAKTO-220

www.st.com

Table 1. Device summaryOrder codes Marking Package Packaging

STD5NM60-1 D5NM60 IPAK Tube

STD5NM60T4 D5NM60 DPAK Tape & reel

STB8NM60T4 B8NM60 D²PAK Tape & reel

STP8NM60 P8NM60 TO-220 Tube

STP8NM60FP P8NM60FP TO-220FP Tube

Electrical ratings STP8NM60, STD5NM60, STB8NM60

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1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter

Value

UnitTO-220D²PAK

TO-220FPIPAKDPAK

VGS Gate-source voltage ± 30 V

ID Drain current (continuous) at TC = 25 °C 8 8(1)

1. Limited only by maximum temperature allowed

5 A

ID Drain current (continuous) at TC=100 °C 5 5 (1) 3.1 (1) A

IDM(2)

2. Pulse width limited by safe operating area

Drain current (pulsed) 32 32 (1) 20 (1) A

PTOT Total dissipation at TC = 25 °C 100 30 96 W

Derating factor 0.8 0.24 0.0.4 W/°C

dv/dt(3)

3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80%V(BR)DSS

Peak diode recovery voltage slope 15 V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t=1 s;TC=25 °C)-- 2500 -- V

TJ

Tstg

Operating junction temperatureStorage temperature

-55 to 150 °C

Table 2. Thermal resistance

Symbol Parameter

Value

UnitTO-220D²PAK

IPAKDPAK

TO-220FP

Rthj-case Thermal resistance junction-case max 1.25 1.3 4.16 °C/W

Rthj-a Thermal resistance junction-ambient max 62.5 °C/W

TlMaximum lead temperature for soldering purpose

300 °C

Table 3. Avalanche data

Symbol Parameter Value Unit

IASAvalanche current, repetitive or not-repetitive(pulse width limited by Tj Max)

2.5 A

EASSingle pulse avalanche energy(starting Tj=25 °C, ID=IAS, VDD=50 V)

200 mJ

STP8NM60, STD5NM60, STB8NM60 Electrical characteristics

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2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage

ID = 250 µA, VGS= 0 600 V

IDSSZero gate voltage drain current (VGS = 0)

VDS = max rating,

VDS = max rating @125 °C

1

10

µA

µA

IGSSGate body leakage current

(VDS = 0)VGS = ±20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on)Static drain-source on resistance

VGS= 10 V, ID= 2.5 A 0.9 1 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs Forward transconductanceVDS = ID(on) x RDS(on)max, ID = 2.5 A

2.4 S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f=1 MHz, VGS=0

400

10010

pF

pFpF

Coss eq(1)

.

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Equivalent output capacitance

VGS=0, VDS =0 to 480 V 50 pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 400 V, ID = 5 A

VGS =10 V

(see Figure 12)

13

5

6

18 nC

nC

nC

Electrical characteristics STP8NM60, STD5NM60, STB8NM60

4/18

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

trtd(off)

tf

Turn-on delay time

Rise timeTurn-off delay time

Fall time

VDD= 300 V, ID= 2.5 A,

RG= 4.7 Ω, VGS=10 V

(see Figure 17)

14

1023

10

ns

nsns

ns

tr(Voff)

tftc

Off-voltage rise timeFall time

Cross-over time

VDD= 480 V, ID= 5 A,

RG= 4.7 Ω, VGS=10 V

710

17

nsns

ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 8 A

ISDM(1)

1. Pulse width limited by safe operating area

Source-drain current (pulsed) 32 A

VSD(2)

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage ISD = 5A, VGS=0 1.5 V

trrQrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, VDD=100 V

di/dt = 100 A/µs,

(see Figure 22)

300

1.95

13

ns

µC

A

trrQrr

IRRM

Reverse recovery timeReverse recovery charge

Reverse recovery current

ISD = 5 A, VDD = 100 V

di/dt = 100 A/µs,

Tj=150 °C (see Figure 22)

4453.00

13.5

nsµC

A

STP8NM60, STD5NM60, STB8NM60 Electrical characteristics

5/18

2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/

D²PAKFigure 3. Thermal impedance for TO-220/

D²PAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for DPAK/IPAK Figure 7. Thermal impedance for DPAK/IPAK

Electrical characteristics STP8NM60, STD5NM60, STB8NM60

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Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Transconductance Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

STP8NM60, STD5NM60, STB8NM60 Electrical characteristics

7/18

Figure 14. Normalized gate threshold voltage vs temperature

Figure 15. Normalized on resistance vs temperature

Figure 16. Source-drain diode forward characteristics

Test circuit STP8NM60, STD5NM60, STB8NM60

8/18

3 Test circuit

Figure 17. Switching times test circuit for resistive load

Figure 18. Gate charge test circuit

Figure 19. Test circuit for inductive load switching and diode recovery times

Figure 20. Unclamped inductive load test circuit

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

STP8NM60, STD5NM60, STB8NM60 Package mechanical data

9/18

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

Package mechanical data STP8NM60, STD5NM60, STB8NM60

10/18

TO-220 mechanical data

Dimmm inch

Min Typ Max Min Typ Max

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066c 0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202F 1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107L 13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154

L20 16.40 0.645L30 28.90 1.137

∅P 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

STP8NM60, STD5NM60, STB8NM60 Package mechanical data

11/18

L2

A

B

D

E

H G

L6

F

L3

G1

1 2 3

F2

F1

L7

L4L5

DIM.mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1.126 1.204

L4 9.8 10.6 .0385 0.417

L5 2.9 3.6 0.114 0.141

L6 15.9 16.4 0.626 0.645

L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

TO-220FP MECHANICAL DATA

Package mechanical data STP8NM60, STD5NM60, STB8NM60

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D²PAK (TO-263) mechanical data

Dimmm inch

Min Typ Max Min Typ Max

A 4.40 4.60 0.173 0.181

A1 0.03 0.23 0.001 0.009

b 0.70 0.93 0.027 0.037b2 1.14 1.70 0.045 0.067

c 0.45 0.60 0.017 0.024

c2 1.23 1.36 0.048 0.053D 8.95 9.35 0.352 0.368

D1 7.50 0.295

E 10 10.40 0.394 0.409E1 8.50 0.334

e 2.54 0.1

e1 4.88 5.28 0.192 0.208H 15 15.85 0.590 0.624

J1 2.49 2.69 0.099 0.106

L 2.29 2.79 0.090 0.110L1 1.27 1.40 0.05 0.055

L2 1.30 1.75 0.051 0.069

R 0.4 0.016V2 0° 8° 0° 8°

0079457_M

STP8NM60, STD5NM60, STB8NM60 Package mechanical data

13/18

DIM.mm.

min. typ max.

A 2.20 2.40

A1 0.90 1.10

b 0.64 0.90

b2 0.95

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

E 6.40 6.60

e 2.28

e1 4.40 4.60

H 16.10

L 9.00 9.40

(L1) 0.80 1.20

L2 0.80

V1 10 o

TO-251 (IPAK) mechanical data

0068771_H

Package mechanical data STP8NM60, STD5NM60, STB8NM60

14/18

DIM.mm.

min. typ max.

A 2.20 2.40

A1 0.90 1.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e 2.28

e1 4.40 4.60

H 9.35 10.10

L 1

L1 2.80

L2 0.80

L4 0.60 1

R 0.20

V2 0 o 8 o

TO-252 (DPAK) mechanical data

0068772_G

STP8NM60, STD5NM60, STB8NM60 Packaging mechanical data

15/18

5 Packaging mechanical data

TAPE AND REEL SHIPMENT

D2PAK FOOTPRINT

* on sales type

DIM.mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

BASE QTY BULK QTY

1000 1000

REEL MECHANICAL DATA

DIM.mm inch

MIN. MAX. MIN. MAX.

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

TAPE MECHANICAL DATA

Packaging mechanical data STP8NM60, STD5NM60, STB8NM60

16/18

TAPE AND REEL SHIPMENT

DPAK FOOTPRINT

DIM.mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

BASE QTY BULK QTY

2500 2500

REEL MECHANICAL DATA

DIM.mm inch

MIN. MAX. MIN. MAX.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

TAPE MECHANICAL DATA

All dimensions are in millimeters

STP8NM60, STD5NM60, STB8NM60 Revision history

17/18

6 Revision history

Table 8. Document revision history

Date Revision Changes

14-Apr-2004 11 Title changed

11-Apr-2005 12 Inserted D²PAK

21-Feb-2006 13 New template

08-Sep-2006 14 Modified order codes

14-Sep-2006 15 Corrected Figure 6.: Safe operating area for DPAK/IPAK

09-Jul-2007 16 Qrr value in Table 7.: Source drain diode has been updated

01-Oct-2008 17 4: Package mechanical data updated

STP8NM60, STD5NM60, STB8NM60

18/18

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