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2013 Microchip Technology Inc. Preliminary DS70005126A-page 1
Features
• Small package size
- 20-contact UQFN (4mm x 4mm x 0.6 mm max)
• 50Ω input and output match including DC blocks
• Integrated harmonic filter
• Operating voltage
- VCC = 5.0V
• Operating frequency: 5.1 to 5.9 GHz
• High linear output power, typical performance:
- 802.11a OFDM Spectrum mask compliant up to 24 dBm
- 802.11n HT40 OFDM Spectrum mask compliant up to 23.5 dBm
- 3% EVM up to 20.5 dBm for 802.11a, 54 Mbps signal
- 2.5% EVM up to 20 dBm for 802.11n, HT40- 1.8% EVM up to 19 dBm for 802.11ac, MCS9,
80 MHz BW (bandwidth) signal
• High power-added efficiency/low operating cur-rent for 54 Mbps 802.11a applications
- ~11% @ POUT = 24 dBm for 802.11a OFDM
• Gain:
- Typically 31 dB gain across 5.1–5.9 GHz
• Idle current
- ~290 mA ICQ
• High-speed power-up/down
- Turn on/off time (10%-90%) <100 ns
• Shut-down current (~2 µA)
• On-chip power detection
- 20 dB linear dynamic range- VSWR insensitive
• All devices are RoHS compliant
Applications
• WLAN (IEEE 802.11a/n/ac)
• HyperLAN2
• Multimedia
Product Description
SST11CP22 is a 50Ω, RF-matched power amplifiermodule (PAM) with a FCC-compliant harmonic filterthat is based on the highly-reliable InGaP/GaAs HBTtechnology.
Operating over the 5.1–5.9 GHz frequency band,SST11CP22 meets 802.11a spectrum mask require-ments up to 24 dBm and 802.11n HT40 spectrum maskat 23.5 dBm. With 802.11a modulation, this PA typicallyprovides up to 20.5 dBm with 3% EVM, and provides19 dBM with less tan 1.8% dynamic EVM using802.11ac modulation, MCS9, 80 MHz bandwidth.
This power amplifier module also features easy board-leveloperation, with a simple application circuit requiring only fourexternal components. With its high-speed power-up/-downcontrol and low enable control current of less than 3 mA,SST11CP22 is controllable directly from the baseband chip.
SST11CP22 also features a wide dynamic-range, linearpower detector that is temperature-stable and VSWR-insensitive.
SST11CP22 is offered in 20-contact QFN package. SeeFigure 2-1 for pin assignments and Table 2-1 for pindescriptions.
SST11CP225.1-5.9 GHz High-Power 11ac WLAN Power Amplifier
SST11CP22
DS70005126A-page 2 Preliminary 2013 Microchip Technology Inc.
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Most Current Data Sheet
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2013 Microchip Technology Inc. Preliminary DS70005126A-page 3
SST11CP22
1.0 FUNCTIONAL BLOCKS
FIGURE 1-1: FUNCTIONAL BLOCK DIAGRAM
70005126 B1.0
2
1
4
3
5
6 7 8 9 10
14
15
12
13
11
20 19 18 17 16
VC
C1
VC
C3
VC
C2
GN
D
NC
NC
GND
GND
RFOUT
GND
NC
GND
RF-IN
GND
PEN
NC
NC
DE
TGND
GN
D
Bias Circuit
InputMatch
OutputMatch/Filter
SST11CP22
DS70005126A-page 4 Preliminary 2013 Microchip Technology Inc.
2.0 PIN ASSIGNMENTS
FIGURE 2-1: PIN ASSIGNMENTS FOR 20-CONTACT UQFN
TABLE 2-1: PIN DESCRIPTION
Symbol Pin No. Pin Name Function
GND 0 Center ground contact The center pad should be connected to RF ground with sev-eral low inductance, low resistance vias.
NC 1 No Connection Unconnected, no internal connection
GND 2 Ground
RFIN 3 RF input RF input port
GND 4 Ground
PEN 5 PA enable PA enable control input
NC 6 No Connection Unconnected, no internal connection
NC 7 No Connection Unconnected, no internal connection
NC 8 No Connection Unconnected, no internal connection
NC 9 No Connection Unconnected, no internal connection
DET 10 TX detector output TX detector output
GND 11 Ground
GND 12 Ground
RF OUT 13 RF Out RF Output port
GND 14 Ground
GND 15 Ground
GND 16 Ground
GND 17 Ground
VCC3 18 PA supply PA Supply
VCC2 19 PA supply PA Supply
VCC1 20 PA supply PA Supply
70005126 P1.0
2
1
4
3
5
6 7 8 9 10
14
15
12
13
11
20 19 18 17 16
VC
C1
VC
C3
VC
C2
GN
D
NC
NC
GND
GND
RFOUT
GND
NC
GND
RF-IN
GND
PEN
NC
NC
DE
T
GND
GN
D
2013 Microchip Technology Inc. Preliminary DS70005126A-page 5
SST11CP22
3.0 ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifierinterface signals. Refer to Table 3-2 for the DC voltageand current specifications. Refer to Figures 4-1 through4-8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-tional operation of the device at these conditions or conditions greater than those defined in the operationalsections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions mayaffect device reliability.)
Supply Voltage at pins 18, 19, and 20 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
Supply voltage to pins 5, 6, and 7 (VPEN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Maximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 dBm
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
TABLE 3-1: OPERATING RANGE
Range Ambient Temp VCC
Industrial -10°C to +85°C 5.0V-6.0V
TABLE 3-2: DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Min. Typ Max. Unit
VCC Supply Voltage 5.0 6.0 V
ICC Supply Current @ POUT = 20 dBm 370 mA
ICQ VCC Quiescent Current 290 mA
IOFF Shutdown Current 2 µA
VPEN Recommended Enable Voltage 2.95 V
IPEN Total Enable Current 2 mA
VDETRF Power Detector Voltage Output Range 0.4 1.5 V
Voltage at 19 dBm 1.0 V
SST11CP22
DS70005126A-page 6 Preliminary 2013 Microchip Technology Inc.
TABLE 3-3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION VCC = 5.0V, VPEN=2.95V
Symbol Parameter Min. Typ Max. Unit
FL-U Frequency range 5.1 5.9 GHz
Linear Power
Output power at 3% EVM at 54 Mbps OFDM signal, 802.11a
20.5 dBm
Output power at 2.5% dynamic EVM 802.11n HT40 20 dBm
Output power 1.8% dynamic EVM MCS9 80 MHz BW
19 dBm
ACPRA output power level with 802.11a mask com-pliance @ 6Mbps OFDM
24 dBm
ACPRN40 output power level with 802.11n HT40 mask compliance
23.5 dBm
G Power gain from 5.18-5.9 GHz 31 dB
RF Input Return Loss
Small signal 10 dB
2ƒ0 Second Harmonic Power Den-sity
Harmonics at 24 dBm -45 dBm/MHz
3ƒ0ThirdHarmonic Power Den-sity
Harmonics at 24 dBm -50 dBm/MHz
2013 Microchip Technology Inc. Preliminary DS70005126A-page 7
SST11CP22
4.0 TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: VCC = 5.0V, TA = 25°C, VPEN = 2.95V, 802.11a 54 Mbps OFDM Modulation Unless otherwise specified
FIGURE 4-1: S-PARAMETERS
FIGURE 4-2: EVM VERSUS OUTPUT POWER, 802.11a 54 Mbps, 100% DUTY CYCLE MEASURED WITH EQUALIZER CHANNEL ESTIMATION SET TO “SEQUENCE ONLY”, VPEN=2.95V
70005121 Sparams 1.0
-60
-50
-40
-30
-20
-10
0
10
20
30
40
0 1 2 3 4 5 6 7 8 9 10 11 12 13
S-P
aram
eter
(dB)
Frequency, GHz
S11
S21
S12
S22
70005126 F4.0
0
1
2
3
4
5
6
7
8
9
10
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
EV
M (%
)
Output Power (dBm)
5180
5500
5850
SST11CP22
DS70005126A-page 8 Preliminary 2013 Microchip Technology Inc.
FIGURE 4-3: DYNAMIC EVM VERSUS OUTPUT POWER, 802.11n HT40, 50% DUTY CYCLE MEASURED WITH EQUALIZER CHANNEL ESTIMATION SET TO “SEQUENCE ONLY”, VPEN=2.95V
FIGURE 4-4: DYNAMIC EVM VERSUS OUTPUT POWER, 802.11ac MCS9, 80 MHz, 60 µS PULSE, 50% DUTY CYCLE, MEASURED WITH EQUALIZER CHANNEL ESTIMATION SET TO SEQUENCE ONLY, VPEN=2.95V
70005126 F5.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
EV
M (%
)
Output Power (dBm)
5180
5500
5850
70005126 F6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
EV
M (%
)
Output Power (dBm)
5180
5500
5850
2013 Microchip Technology Inc. Preliminary DS70005126A-page 9
SST11CP22
FIGURE 4-5: POWER SUPPLY CURRENT VERSUS OUTPUT POWER, VCC = 5.0V, 802.11a 54 Mbps, 100% DUTY CYCLE, VPEN=2.95V
FIGURE 4-6: INSTANTANEOUS POWER SUPPLY CURRENT VERSUS OUTPUT POWER, VCC=5.0V, 802.11ac MCS9, 80 MHz, 60 µs PULSE, 50% DUTY CYCLE VPEN=2.95V
70005126 F7.0
260270280290300310320330340350360370380390400410420
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Supp
ly C
urre
nt (m
A)
Output Power (dBm)
5180
5500
5850
70005126 F8.0
260270280290300310320330340350360370380390400410420
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Supp
ly C
urre
nt (m
A
Output Power (dBm
5180
5500
5850
SST11CP22
DS70005126A-page 10 Preliminary 2013 Microchip Technology Inc.
FIGURE 4-7: POWER GAIN VERSUS OUTPUT POWER
FIGURE 4-8: DETECTOR VOLTAGE VERSUS OUTPUT POWER, VPEN=2.95V
70005126 F9.0
10121416182022242628303234363840
10 11 12 13 14 15 16 17 18 19 20 21 22 23
Pow
er G
ain
(dB
)
Output Power (dBm)
5180
5500
5850
70005126 F10.0
0.000.100.200.300.400.500.600.700.800.901.001.101.20
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Det
ecto
r Vol
tage
(V
Output Power (dBm
5180
5850
5850
2013 Microchip Technology Inc. Preliminary DS70005126A-page 11
SST11CP22
FIGURE 4-9: TYPICAL SCHEMATIC FOR 802.11a/n/ac APPLICATIONS, VCC=5.0V, VPEN=2.95V
70005126 schematic 1.1
2
1
4
3
5
6 7 8 9 10
14
15
12
13
11
20 19 18 17 16
50Ω
0.1 µF
RFIN
PEN
DET
50ΩRFOUT
VCC0.1 µF0.1 µF2.2 µF
SST11CP22
DS70005126A-page 12 Preliminary 2013 Microchip Technology Inc.
5.0 PACKAGE INFORMATION
BA
0.20 C
0.20 C
D
D2
E2
E
20 X b0.07 C A B0.05 C
(DATUM B)(DATUM A)
CSEATING
PLANE
NOTE 1
1
2
N
2XTOP VIEW
SIDE VIEW
BOTTOM VIEW
For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Note:
e
NOTE 1
1
2
N
0.10 C A B
0.10 C A B
(A3)
0.10 C
0.08 C
A1
Microchip Technology Drawing C04-252A Sheet 1 of 2
20-Lead Ultra Thin Quad Flat Pack, No Lead (GN) - 4x4x0.55 mm Body (UQFN)
2X
K
L
A
2013 Microchip Technology Inc. Preliminary DS70005126A-page 13
SST11CP22
Microchip Technology Drawing C04-252A Sheet 2 of 2
For the most current package drawings, please see the Microchip Packaging Specification located athttp://www.microchip.com/packaging
Note:
20-Lead Ultra Thin Quad Flat Pack, No Lead (GN) - 4x4x0.55 mm Body (UQFN)
Number of Pins
Overall Height
Terminal Width
Overall Width
Overall Length
Terminal Length
Exposed Pad Width
Exposed Pad Length
Terminal Thickness
Pitch
Standoff
UnitsDimension Limits
A1A
b
DE2
D2
(A3)
e
L
E
N0.50 BSC
0.15 REF
2.45
2.45
0.350.20
0.500.00
0.25
4.00 BSC
0.40
2.50
2.50
0.550.02
4.00 BSC
MILLIMETERSMIN NOM
20
2.55
2.55
0.450.30
0.600.05
MAX
K -0.20 -
REF: Reference Dimension, usually without tolerance, for information purposes only.BSC: Basic Dimension. Theoretically exact value shown without tolerances.
1.2.3.
Notes:
Pin 1 visual index feature may vary, but must be located within the hatched area.Package is saw singulatedDimensioning and tolerancing per ASME Y14.5M
Terminal-to-Exposed-Pad
SST11CP22
DS70005126A-page 14 Preliminary 2013 Microchip Technology Inc.
TABLE 5-1: REVISION HISTORY
Revision Description Date
A • Initial release of data sheet Jul 2013
2013 Microchip Technology Inc. Preliminary DS70005126A-page 15
SST11CP22
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Technical support is available through the web siteat: http://microchip.com/support
SST11CP22
DS70005126A-page 16 Preliminary 2013 Microchip Technology Inc.
6.0 PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
Device: SST11CP22 = 51.-5.9 GHz Power Amplifier
Package: GN = UQFN (4mm x 4mm), 0.6 max thickness 20-contact
Evaluation KitFlag
K = Evaluation Kit
Valid Combinations:
SST11CP22-GNSST11CP22-GN-K
XXX
Package
2013 Microchip Technology Inc. Preliminary DS70005126A-page 17
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Trademarks
The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their respective companies.
© 2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-285-0
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2013 Microchip Technology Inc. Preliminary DS70005126A-page 18
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