Singulus 6.1.2, DIE 4BR, Row3 Column20, Size 160nm*65nm
4
10 -1 10 0 10 1 10 2 10 3 10 4 10 5 10 6 10 7 0.4 0.6 0.8 1.0 P ulse A m p litud e (V ) P u lse W id th (n s) Sub/3 Ta/40 CuN/3 Ta/40 CuN/3 Ta/10 Ru/5 Ta/15 PtMn/2.5 CoFe30 /0.85 Ru/ 2.4 Co 40 Fe 40 B 20 / 0.823 MgO/ 1.8 Co 60 Fe 20 B 20 /2 Cu/5 Ta/ 10 Cu/ 5 Ru/3 Ta -0.8 -0 .6 -0 .4 -0.2 0.0 0 .2 0.4 0.6 400 600 800 1000 R esista nce (O hm ) C urrent(m A ) -250 -200 -150 -1 00 -5 0 0 50 100 400 500 600 700 800 900 1000 1100 R e sista nce (O hm ) F ield (O e) H c =-70-75 O e H f =-104 O e M R =122% ngulus 6.1.2, DIE 4BR, Row3 Column20, Size 160nm*65 0 0 1 VV 0 0 1 1 ln V V Δ=55.2 6 0 0 6.48 ns 0.2861 V V H c = 70-75 Oe o P switching, Reset by field, 100 counts for each point 0 1 2 3 4 5 6 7 8 9 10 11 -20 0 20 40 60 80 100 1.38 pJ 0.73 pJ 0.48 pJ 0.46 pJ V in =0.200 V , V s = 0 .3 8 V V in =0.250 V , V s = 0 .4 8 V V in =0.275 V , V s = 0 .5 2 V V in =0.300 V , V s = 0 .5 7 V V in =0.400 V , V s = 0 .7 6 V S w itchin g P ro b a b lity (% ) P u lse W id th (ns) 0.62 pJ At 100% Switching Probability
description
Singulus 6.1.2, DIE 4BR, Row3 Column20, Size 160nm*65nm. H c = 70-75 Oe. AP to P switching, Reset by field, 100 counts for each point. At 100% Switching Probability. Δ =55.26. - PowerPoint PPT Presentation
Transcript of Singulus 6.1.2, DIE 4BR, Row3 Column20, Size 160nm*65nm
10-1 100 101 102 103 104 105 106 107
0.4
0.6
0.8
1.0
Pul
se A
mpl
itude
(V
)
Pulse Width (ns)Sub/3 Ta/40 CuN/3 Ta/40 CuN/3 Ta/10 Ru/5 Ta/15 PtMn/2.5 CoFe30 /0.85 Ru/ 2.4 Co40Fe40B20 / 0.823 MgO/ 1.8 Co60Fe20B20/2 Cu/5 Ta/ 10 Cu/ 5 Ru/3 Ta
-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
400
600
800
1000
Res
ista
nce
(Ohm
)
Current (mA)
-250 -200 -150 -100 -50 0 50 100
400
500
600
700
800
900
1000
1100
Res
ista
nce
(Ohm
)
Field (Oe)
Hc=-70-75 Oe
Hf=-104 Oe
MR=122%
Singulus 6.1.2, DIE 4BR, Row3 Column20, Size 160nm*65nm
0
0 1V V
00
11 lnV V
Δ=55.26
0
0
6.48 ns
0.2861 VV
Hc= 70-75 Oe
AP to P switching, Reset by field, 100 counts for each point
0 1 2 3 4 5 6 7 8 9 10 11
-20
0
20
40
60
80
100
1.38 pJ0.73 pJ0.48 pJ
0.46 pJ
Vin =0.200 V, Vs=0.38 V
Vin =0.250 V, Vs=0.48 V
Vin =0.275 V, Vs=0.52 V
Vin =0.300 V, Vs=0.57 V
Vin =0.400 V, Vs=0.76 VSw
itchi
ng P
roba
blity
(%
)
Pulse Width (ns)
0.62 pJ
At 100% Switching Probability
1 2 3 4 5 6 7 8 9 100.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
0.38
0.40
Inpu
t Pul
se A
mpl
itude
(V
)
Pulse Width (ns)
0.0012.525.037.550.062.575.087.5100
AP to P Switching Probablity (%)
0 1 2 3 4 5 6 7 8 9 10 11
-20
0
20
40
60
80
100
1.38 pJ0.73 pJ0.48 pJ
0.46 pJ
Vin =0.200 V, Vs=0.38 V
Vin =0.250 V, Vs=0.48 V
Vin =0.275 V, Vs=0.52 V
Vin =0.300 V, Vs=0.57 V
Vin =0.400 V, Vs=0.76 VSw
itchi
ng P
roba
blity
(%
)
Pulse Width (ns)
0.62 pJ
-250-200-150-100 -50 0 50 100400
600
800
1000
Res
ista
nce
(Ohm
)
H (Oe)
Rap
=1047 R
p=460
MR=127%
0 1 2 3 4 5 6 7 8 9 10 11
0
20
40
60
80
100
V=0.48 V, V=0.57 V, V=0.67 V, V=0.76 V, V=0.86 V, V=0.95 V, V=1.05 V,
Sw
itchi
ng P
roba
bilit
y (%
)
Pulse Width (ns)
Sub/3 Ta/40 CuN/3 Ta/40 CuN/3 Ta/10 Ru/5 Ta/15 PtMn/2.5 CoFe30 /0.85 Ru/ 2.4 Co40Fe40B20 / 0.844 MgO/ 1.8 Co60Fe20B20/2 Cu/5 Ta/ 10 Cu/ 5 Ru/3 Ta
AP to P switching, Reset by field, 100 counts for each point
Size 160nm*65nm Rp×A=3.8 Ω*μm2
0.5 0.6 0.7 0.8 0.9 1.0
2
4
6
8
10
Pul
se W
idth
(ns
)
Pulse Voltage (V)
00.12500.25000.37500.50000.62500.75000.87501.000
AP-P switching Probability
AP-P switching and P-AP switching
-250 -200 -150 -100 -50 0600
800
1000
1200
1400
1600
Re
sis
tan
ce
(o
hm
)
Field (Oe)
Rap
=1500
Rp=690
TMR=117%
0.50 0.75 1.00 1.25 1.50
1
2
3
P to AP switching APto P switching
Pul
se W
idth
(ns
)
Pulse current (mA)
0.6 0.7 0.8 0.9 1.0 1.10.5
1.0
1.5
2.0
2.5
3.0
P to AP switching AP to P switching
Pul
se w
idth
(ns
)
Pulse voltage (V)
Size 130nm*50nm Rp×A=3.5 Ω*μm2
Rap=1500 ΩRp=690 Ω
TMR=117%
At 50% Switching Probability
