Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

2016.08.00 Initiate

2017.07.14 Change Logo

BVDSS = 600 V

RDS(on) = 5.0 Ω

ID = 2.0 A

Originative New Design

100% EAS Test

Rugged Gate Oxide Technology

Extremely Low Intrinsic Capacitances

Remarkable Switching Characteristics

Unequalled Gate Charge : 9.5 nC (Typ.)

Extended Safe Operating Area

Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V

Thermal Resistance Characteristics

FEATURES

Absolute Maximum Ratings TC=25 unless otherwise specified

PFP2N60 / PFF2N60 600V N-Channel MOSFET

Symbol Parameter PFP2N60 PFF2N60 Units

VDSS Drain-Source Voltage 600 V

ID Drain Current – Continuous (TC = 25) 2.0 2.0* A

Drain Current – Continuous (TC = 100) 1.3 1.3* A

IDM Drain Current – Pulsed (Note 1) 6 6* A

VGS Gate-Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ

IAR Avalanche Current (Note 1) 2.0 A

EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PD Power Dissipation (TC = 25)

- Derate above 25

54 23 W

0.43 0.18 W/

TJ, TSTG Operating and Storage Temperature Range -55 to +150

TL Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds 300

Symbol Parameter PFP2N60 PFF2N60 Units

RθJC Thermal Resistance, Junction-to-Case 2.32 5.5

/W RθCS Thermal Resistance, Case-to-Sink 0.5 --

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5

Aug 2006

TO-220

1.Gate 2. Drain 3. Source

3 2

1

* Drain current limited by maximum junction temperature

APPLICATION

High current, High speed switching

Suitable for power supplies, adaptors and PFC

SMPS (Switched Mode Power Supplies) 3 2

1

1.Gate 2. Drain 3. Source

TO-220F

Gate

Source

Drain

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS=2.0A, VDD=50V, RG=25, Starting TJ =25C

3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 C

4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature

Electrical Characteristics TC=25 C unless otherwise specified

IS Continuous Source-Drain Diode Forward Current -- -- 2.0 A

ISM Pulsed Source-Drain Diode Forward Current -- -- 6

VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V -- -- 1.5 V

trr Reverse Recovery Time IS = 2.0 A, VGS = 0 V

diF/dt = 100 A/μs (Note 4)

-- 230 --

Qrr Reverse Recovery Charge -- 1.0 -- μC

Symbol Parameter Test Conditions Min Typ Max Units

VGS Gate Threshold Voltage VDS = VGS, ID = 250 2.0 -- 4.0 V

RDS(ON) Static Drain-Source

On-Resistance VGS = 10 V, ID = 1.0 A -- 4.0 5.0 Ω

On Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 600 -- -- V

ΔBVDSS

/ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250 , Referenced to25 -- 0.6 -- V/

IDSS Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V -- -- 1

VDS = 480 V, TC = 125 -- -- 10

IGSSF Gate-Body Leakage Current,

Forward VGS = 30 V, VDS = 0 V -- -- 100

IGSSR Gate-Body Leakage Current,

Reverse VGS = -30 V, VDS = 0 V -- -- -100

Off Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 320 420

Coss Output Capacitance -- 35 46

Crss Reverse Transfer Capacitance -- 4.5 6.0

Dynamic Characteristics

td(on) Turn-On Time VDS = 300 V, ID = 2.0 A,

RG = 25 Ω

(Note 4,5)

-- 8 30

tr Turn-On Rise Time -- 23 60

td(off) Turn-Off Delay Time -- 25 60

tf Turn-Off Fall Time -- 28 70

Qg Total Gate Charge VDS = 480 V, ID = 2.0 A,

VGS = 10 V

(Note 4,5)

-- 9.5 13 nC

Qgs Gate-Source Charge -- 1.6 -- nC

Qgd Gate-Drain Charge -- 4.0 -- nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

10-1

100

101

10-2

10-1

100

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

※ Notes :

1. 250μ s Pulse Test

2. TC = 25

I D,

Dra

in C

urr

ent

[A]

VDS

, Drain-Source Voltage [V]

Figure 1. On Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Typical Characteristics

2 4 6 8 1010

-1

100

150oC

25oC

-55oC ※ Notes :

1. VDS

= 40V

2. 250μ s Pulse Test

I D,

Dra

in C

urr

ent

[A]

VGS

, Gate-Source Voltage [V]

0 1 2 3 4 5 60

3

6

9

12

15

18

VGS

= 20V

VGS

= 10V

※ Note : TJ = 25

RD

S(O

N) [Ω

],

Dra

in-S

ou

rce

On

-Re

sis

tan

ce

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.410

-1

100

150

※ Notes :

1. VGS

= 0V

2. 250μ s Pulse Test

25

I DR,

Revers

e D

rain

Curr

ent

[A]

VSD

, Source-Drain voltage [V]

10-1

100

101

0

200

400

600

Coss

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

※ Notes :

1. VGS

= 0 V

2. f = 1 MHzC

rss

Ciss

Capacitance [

pF

]

VDS

, Drain-Source Voltage [V]

0 2 4 6 8 100

2

4

6

8

10

12

VDS

= 300V

VDS

= 120V

VDS

= 480V

※ Note : ID = 2.0 A

VG

S,

Gate

-Sourc

e V

oltag

e [

V]

QG, Total Gate Charge [nC]

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9. Maximum Safe Operating Area

for PFP2N60

Figure 10. Maximum Safe Operating Area

for PFF2N60

Typical Characteristics (continued)

Figure 11. Maximum Drain Current vs Case Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes :

1. VGS

= 0 V

2. ID = 250 μ A

BV

DS

S,

(Norm

alized)

Dra

in-S

ourc

e B

reakdow

n V

oltag

e

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. VGS

= 10 V

2. ID = 1.0 A

RD

S(O

N), (

No

rma

lize

d)

Dra

in-S

ou

rce

On

-Re

sis

tan

ce

TJ, Junction Temperature [

oC]

25 50 75 100 125 1500.0

0.4

0.8

1.2

1.6

2.0

I D,

Dra

in C

urr

ent

[A]

TC, Case Temperature []

100

101

102

103

10-2

10-1

100

101

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

I D,

Dra

in C

urr

ent

[A]

VDS

, Drain-Source Voltage [V]

100

101

102

103

10-2

10-1

100

101

10 s

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

I D,

Dra

in C

urr

ent

[A]

VDS

, Drain-Source Voltage [V]

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Figure 12. Transient Thermal Response Curve for PFP2N60

Typical Characteristics (continued)

Figure 13. Transient Thermal Response Curve for PFF2N60

t2

t1

PDM

t2

t1

PDM

10-5

10-4

10-3

10-2

10-1

100

101

10-2

10-1

100

※ Notes :

1. Zθ JC

(t) = 2.32 /W Max.

2. Duty Factor, D=t1/t

2

3. TJM

- TC = P

DM * Z

θ JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

JC(t

), T

herm

al R

espo

nse

t1, Square Wave Pulse Duration [sec]

10-5

10-4

10-3

10-2

10-1

100

101

10-2

10-1

100

※ Notes :

1. Zθ JC

(t) = 5.5 /W Max.

2. Duty Factor, D=t1/t

2

3. TJM

- TC = P

DM * Z

θ JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

JC(t

), T

herm

al R

espo

nse

t1, Square Wave Pulse Duration [sec]

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Fig 15. Gate Charge Test Circuit & Waveform

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF 12V

Same Type

as DUT

Fig 14. Resistive Switching Test Circuit & Waveforms

Vin

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

( 0.5 rated VDS )

10V

VDS

RL

DUT

RG

Fig 16. Unclamped Inductive Switching Test Circuit & Waveforms

EAS = LL IAS2 ----

2

1 --------------------

BVDSS -- VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

Characteristics Test Circuit & Waveform

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Fig 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

10V VGS

( Driver )

I S

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

Vf

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period --------------------------

DUT

VDS

+

_

Driver

RG Same Type

as DUT

VGS • dv/dt controlled by RG

• IS controlled by pulse period

VDD

L

I S

Characteristics Test Circuit & Waveform (continued)

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Package Dimension

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Package Dimension

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Sample Size #of Fail Cum. Fail% 168hrs 300hrs

45 0 0.0% 0 0

A. High Temperature Reverse Bias ( HTRB )

The purpose of this test is to determine the sensitivity of the product to mobile ion contamination and

related failure mechanisms.

Conditions: MIL-STD-750C 1038, JIS C 7021 B-3

TA=150 VDS=80% max rated VDS

Reliability Qualification

Sample Size #of Fail Cum. Fail% 168hrs 300hrs

45 0 0.0% 0 0

B. High Temperature Gate Bias ( HTGB )

The purpose of this test is to determine the sensitivity of the product to mobile ion contamination

between gate and source and related failure mechanisms.

Conditions: MIL-STD-750C 1038, JIS C 7021 B-3

TA=150 VDS= VGSS max

C. Temperature Humidity Bias ( THB )

The purpose of this test is to evaluate the moisture resistance of non-hermetic components.

The addition of voltage bias accelerates the corrosive effect after moisture penetration has taken place.

with time, this is a catastrophically destructive test.

Conditions: JESD22-A101, JIS C 7021 B-11

TA=85 RH=85% VDS=80% max rated VDS

Sample Size #of Fail Cum. Fail% 168hrs 300hrs

45 0 0.0% 0 0

Wing On STS REV.A0

PF

P2N

60

/ PF

F2N

60

Aug 2006

Sample Size #of Fail Cum. Fail% 168hrs 300hrs

45 0 0.0% 0 0

D. High Temperature Storage ( HTS )

The purpose of this test is to expose time/temperature failure mechanisms and to evaluate

long-term strong stability.

Conditions: MIL-STD-750C 1031.4, JIS C 7021 B-10

TA=Tstg(max) 150

F. Temperature Cycle Air-to Air ( T/C )

The purpose of this test is to evaluate the ability of the device to withstand both exposure to

extreme temperature and the transition between temperature extreme, and to exposure excessive

thermal mismatch between materials.

Conditions: JESD22-A104, JIS C 7021 A-4

Air to air, -65~150, 10 minutes dwell time at each temperature

Sample Size #of Fail Cum. Fail% 100cycles 200cycles

22 0 0.0% 0 0

Reliability Qualification ( Continued )

Sample Size #of Fail Cum. Fail% 48hrs

22 0 0.0% 0

E. Pressure Cooker Test ( PCT )

Autoclave ( ACLV )

The purpose of this test is to evaluate the moisture resistance of non-hermetic components under

pressure/temperature conditions.

Conditions: MIL-STD-750C 1071.2, JIS C 7021 A-6

TA=121±2 RH=100% P=1 atmosphere (15psig)