Triacs BT137 series E sensitive gate Semiconductors Product specification Triacs BT137 series E...

Philips Semiconductors Product specification

Triacs BT137 series E sensitive gate

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNITtriacs in a plastic envelope, intendedfor use in general purpose BT137- 500E 600E 800Ebidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 Vcontrol applications, where high voltagessensitivity is required in all four IT(RMS) RMS on-state current 8 8 8 Aquadrants. ITSM Non-repetitive peak on-state 55 55 55 A

current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1

2 main terminal 2

3 gate

tab main terminal 2

LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800VDRM Repetitive peak off-state - 5001 6001 800 V

voltages

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 ˚C - 8 AITSM Non-repetitive peak full sine wave; Tj = 125 ˚C prior

on-state current to surge; with reapplied VDRM(max)t = 20 ms - 55 At = 16.7 ms - 60 A

I2t I2t for fusing t = 10 ms - 15 A2sdIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µstriggering T2+ G+ - 50 A/µs

T2+ G- - 50 A/µsT2- G- - 50 A/µsT2- G+ - 10 A/µs

IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 ˚CTj Operating junction - 125 ˚C

temperature

T1T2

G1 2 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 6 A/µs.

February 1996 1 Rev 1.100



THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Rth j-mb Thermal resistance full cycle - - 2.0 K/Wjunction to mounting base half cycle - - 2.4 K/W

Rth j-a Thermal resistance in free air - 60 - K/Wjunction to ambient

STATIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

IGT Gate trigger current VD = 12 V; IT = 0.1 AT2+ G+ - 2.5 10 mAT2+ G- - 4.0 10 mAT2- G- - 5.0 10 mAT2- G+ - 11 25 mA

IL Latching current VD = 12 V; IGT = 0.1 AT2+ G+ - 3.0 25 mAT2+ G- - 14 35 mAT2- G- - 3.0 25 mAT2- G+ - 4.0 35 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 2.5 20 mAVT On-state voltage IT = 10 A - 1.3 1.65 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - VID Off-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICSTj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/µsoff-state voltage exponential waveform; gate open circuit

tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - 2 - µstime dIG/dt = 5 A/µs




Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

sinusoidal currents, tp ≤ 20ms.

Fig.3. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.

Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; Tmb ≤ 102˚C.

Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0 2 4 6 8 100

2

4

6

8

10

12= 180

120

90

60

30

BT137

IT(RMS) / A

Ptot / W Tmb(max) / C

125

121

117

113

109

105

101

1

-50 0 50 100 1500

2

4

6

8

10BT137

102 C

Tmb / C

IT(RMS) / A

10us 100us 1ms 10ms 100ms10

100

1000BT137

T / s

ITSM / A

TITSM

time

I

Tj initial = 125 C max

T

dI /dt limitT

T2- G+ quadrant

0.01 0.1 1 100

5

10

15

20

25BT137

surge duration / s

IT(RMS) / A

1 10 100 10000

10

20

30

40

50

60BT137

Number of cycles at 50Hz

ITSM / A

TITSM

time

I

Tj initial = 125 C max

T

-50 0 50 100 1500.4

0.6

0.8

1

1.2

1.4

1.6BT136

Tj / C

VGT(Tj)VGT(25 C)




Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),versus junction temperature Tj.

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),versus junction temperature Tj.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.

Fig.12. Typical, critical rate of rise of off-state voltage,dVD/dt versus junction temperature Tj.

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3BT137E

Tj / C

T2+ G+T2+ G-T2- G-T2- G+

IGT(Tj)IGT(25 C)

0 0.5 1 1.5 2 2.5 30

5

10

15

20

25BT137

VT / V

IT / A

Tj = 125 CTj = 25 C

typ maxVo = 1.264 VRs = 0.0378 Ohms

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3TRIAC

Tj / C

IL(Tj)IL(25 C)

10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01

0.1

1

10BT137

tp / s

Zth j-mb (K/W)

t pP

t

D

bidirectional

unidirectional

-50 0 50 100 1500

0.5

1

1.5

2

2.5

3TRIAC

Tj / C

IH(Tj)IH(25C)

0 50 100 1501

10

100

1000

Tj / C

dVD/dt (V/us)




MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8".

10,3max

3,7

2,8

3,03,0 maxnot tinned

1,3max(2x)

1 2 3

2,40,6

4,5max

5,9min

15,8max

1,3

2,54 2,54

0,9 max (3x)

13,5min




DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.


Triacs BT137 series E sensitive gate Semiconductors Product specification Triacs BT137 series E...

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