N-Channel Advanced Power MOSFET ... NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX A 4.40 4.55 4.70...
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RU1H140R N-Channel Advanced Power MOSFET Symbol Rating Unit V DSS 100 V GSS ±25 T J 175 °C T STG -55 to 175 °C I S T C =25°C 140 A I DP ① T C =25°C 560 A T C =25°C 140 T C =100°C 99 T C =25°C 300 T C =100°C 150 R θJC 0.5 °C/W R θJA 62.5 °C/W E AS ③ 552 mJ Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 1 www.ruichips.com Pin Description Features Applications Absolute Maximum Ratings TO220 N-Channel MOSFET Parameter Common Ratings (T C =25°C Unless Otherwise Noted) •100V/140A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) • High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching Drain-Source Voltage V Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings Avalanche Energy, Single Pulsed Diode Continuous Forward Current 300μs Pulse Drain Current Tested Continuous Drain Current(V GS =10V) Maximum Power Dissipation Mounted on Large Heat Sink I D ② A P D W Thermal Resistance-Junction to Ambient G D S D S G
Transcript of N-Channel Advanced Power MOSFET ... NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX A 4.40 4.55 4.70...
RU1H140RN-Channel Advanced Power MOSFET
Symbol Rating Unit
VDSS 100
VGSS ±25
TJ 175 °C
TSTG -55 to 175 °C
IS TC=25°C 140 A
IDP① TC=25°C 560 A
TC=25°C 140
TC=100°C 99
TC=25°C 300
TC=100°C 150
RθJC 0.5 °C/W
RθJA 62.5 °C/W
EAS③ 552 mJ
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 1 www.ruichips.com
Pin DescriptionFeatures
Applications
Absolute Maximum Ratings
TO220
N-Channel MOSFET
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
•100V/140A, RDS (ON) =7mΩ(Typ.)@VGS=10V• Super High Dense Cell Design• Ultra Low On-Resistance• 100% avalanche tested• Lead Free and Green Devices Available (RoHS Compliant)
• High Efficiency Synchronous Rectification in SMPS• High Speed Power Switching
Drain-Source VoltageV
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
Avalanche Energy, Single Pulsed
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current(VGS=10V)
Maximum Power Dissipation
Mounted on Large Heat Sink
ID② A
PD W
Thermal Resistance-Junction to Ambient
GD
S
D
S
G
RU1H140R
Min. Typ. Max.
BVDSS Drain-Source Breakdown Voltage 100 V
1
TJ=125°C 30
VGS(th) Gate Threshold Voltage 2 4 V
IGSS Gate Leakage Current ±100 nA
RDS(ON)④ Drain-Source On-state Resistance 7 9 mΩ
VSD④ Diode Forward Voltage 1.2 V
trr Reverse Recovery Time 43 ns
Qrr Reverse Recovery Charge 67 nC
RG Gate Resistance 1 Ω
Ciss Input Capacitance 6800
Coss Output Capacitance 630
Crss Reverse Transfer Capacitance 350
td(ON) Turn-on Delay Time 24
tr Turn-on Rise Time 91
td(OFF) Turn-off Delay Time 75
tf Turn-off Fall Time 65
Qg Total Gate Charge 130
Qgs Gate-Source Charge 32
Qgd Gate-Drain Charge 55
Notes:
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 2 www.ruichips.com
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
VDD=50V,IDS=70A,VGEN=10V,RG=5Ω
VDS=80V, VGS=10V,IDS=70A
①Pulse width limited by safe operating area.②Calculated continuous current based on maximum allowable junction temperature. The packagelimitation current is 75A.③Limited by TJmax, IAS =47A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.④Pulse test ; Pulse width≤300µs, duty cycle≤2%.⑤Guaranteed by design, not subject to production testing.
Gate Charge Characteristics⑤
nC
ns
ISD=70A, VGS=0V
ISD=70A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,VDS=50V,Frequency=1.0MHz
pF
Dynamic Characteristics⑤
VGS=±25V, VDS=0V
VGS=10V, IDS=70A
Diode Characteristics
VDS=VGS, IDS=250µA
Static Characteristics
Symbol Parameter Test ConditionRU1H140R
Unit
VGS=0V, IDS=250µA
IDSS Zero Gate Voltage Drain CurrentVDS=100V, VGS=0V
µA
RU1H140R
Device Marking Package Packaging Quantity Reel Size Tape widthRU1H140R RU1H140R TO220 Tube 50 - -
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 3 www.ruichips.com
Ordering and Marking Information
RU1H140R
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 4 www.ruichips.com
Typical Characteristics
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150 175I D
-Dra
in C
urre
nt (A
)TJ - Junction Temperature (°C)
Drain Current
VGS=10V
0
5
10
15
20
25
0 1 2 3 4 5 6 7 8 9 10
RD
S(O
N) -
On
-Res
ista
nce
(mΩ
)
VGS - Gate-Source Voltage (V)
Drain Current
Ids=70A
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150 175
P D-P
ower
(W)
TJ - Junction Temperature (°C)
Power Dissipation
1.00
10.00
100.00
1,000.00
0.1 1 10 100 1000
I D-D
rain
Cur
rent
(A)
VDS - Drain-Source Voltage (V)
Safe Operation Area
10µs100µs1ms10ms
DC
RD
S(O
N) li
mite
d
TC=25°C
0.001
0.01
0.1
1
1E-05 0.0001 0.001 0.01 0.1 1ZthJ
C -
Ther
mal
Res
pons
e (°
C/W
)
Square Wave Pulse Duration (sec)
Thermal Transient Impedance
Single Pulse
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
RθJC=0.5°C/W
RU1H140R
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 5 www.ruichips.com
Typical Characteristics
0
10
20
30
40
50
60
0 1 2 3 4 5
I D-D
rain
Cur
rent
(A)
VDS - Drain-Source Voltage (V)
Output Characteristics
3V
5V
VGS=7,8,10V
0
3
6
9
12
15
0 30 60 90 120 150
RD
S(O
N)-O
n R
esis
tanc
e (m
Ω)
ID - Drain Current (A)
Drain-Source On Resistance
10V
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150 175
Nor
mal
ized
On
Res
ista
nce
TJ - Junction Temperature (°C)
Drain-Source On ResistanceVGS=10VID=70A
TJ=25°CRds(on)=7mΩ 0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2 1.4
I S -
Sour
ce C
urre
nt (A
)
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward
TJ=25°C
TJ=175°C
0
1000
2000
3000
4000
5000
6000
7000
8000
1 10 100
C -
Cap
acita
nce
(pF)
VDS - Drain-Source Voltage (V)
Capacitance
Ciss
Coss
Crss
Frequency=1.0MHz
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150
V GS
-Gat
e-So
urce
Vol
tage
(V)
QG - Gate Charge (nC)
Gate Charge
VDS=80VIDS=70A
RU1H140R
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 6 www.ruichips.com
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
RU1H140R
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 7 www.ruichips.com
Package InformationTO220
E
E1
Q
D
D1
L1
b2L
e
e1
p
E2
A
A1
H1
A2
C
DEP
θ2θ1
P1 L2
b
θ1
MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAXA 4.40 4.55 4.70 0.173 0.179 0.185 Φp1 1.40 1.50 1.60 0.055 0.059 0.063A1 1.20 1.30 1.40 0.047 0.051 0.055 eA2 2.23 2.38 2.53 0.088 0.094 0.100 e1b 0.75 0.80 0.85 0.030 0.031 0.033 H1 6.40 6.50 6.60 0.252 0.256 0.260b2 1.17 1.28 1.39 0.046 0.050 0.055 L 12.70 13.18 13.65 0.500 0.519 0.537c 0.40 0.50 0.60 0.016 0.020 0.024 L1 * * 3.95 * * 0.156D 15.40 15.60 15.80 0.606 0.614 0.622 L2 0.098 REFD1 8.96 9.21 9.46 0.353 0.363 0.372 Φp 3.50 3.60 3.70 0.138 0.142 0.146DEP 0.05 0.13 0.20 0.002 0.005 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113E 9.66 9.97 10.28 0.380 0.393 0.405 θ1 5° 7° 9° 5° 7° 9°
E1 * 8.70 * * 0.343 * θ2 1° 3° 5° 1° 3° 5°
E2 9.80 10.00 10.20 0.386 0.394 0.402
SYMBOL MM INCHSYMBOL MM INCH
0.10 BSC2.54 BSC5.08 BSC 0.20 BSC
2.50 REF
RU1H140R
Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2013 8 www.ruichips.com
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