Vishay SiliconixSi4450DY

Document Number: 70144S09-0393-Rev. F, 09-Mar-09

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N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21

Available • TrenchFET® Power MOSFET

PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)

600.024 at VGS = 10 V 7.5

0.03 at VGS = 6.0 V 6.5

SO-8

D

D

D

D

S

S

S

G 5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4450DY-T1-E3 (Lead (Pb)-free)Si4450DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

G

S

N-Channel MOSFET

Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameter Symbol Limit Unit

Drain-Source Voltage VDS 60V

Gate-Source Voltage VGS ± 20

Continuous Drain Current (TJ = 150 °C)aTA = 25 °C

ID7.5

ATA = 70 °C 5.5

Pulsed Drain Current IDM 50

Continuous Source Current (Diode Conduction)a IS 2.1

Maximum Power DissipationaTA = 25 °C

PD2.5

WTA = 70 °C 1.6

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit

Maximum Junction-to-Ambienta RthJA 50 °C/W

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Document Number: 70144S09-0393-Rev. F, 09-Mar-09

Vishay SiliconixSi4450DY

Notes:a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min. Typ.a Max. Unit

Static

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA

Zero Gate Voltage Drain Current IDSSVDS = 60 V, VGS = 0 V 1

µAVDS = 60 V, VGS = 0 V, TJ = 55 °C 20

On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A

Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 7.5 A 0.020 0.024

ΩVGS = 6.0 V, ID = 6.5 A 0.025 0.03

Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 18.5 S

Diode Forward Voltageb VSD IS = 2.1 A, VGS = 0 V 0.75 1.2 V

Dynamic

Total Gate Charge Qg

VDS = 30 V, VGS = 10 V, ID = 7.5 A

31 50

nCGate-Source Charge Qgs 7.7

Gate-Drain Charge Qgd 8.3

Gate Resistance Rg 1 5.8 Ω

Turn-On Delay Time td(on)

VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

16 30

ns

Rise Time tr 11 20

Turn-Off Delay Time td(off) 41 80

Fall Time tf 21 40

Source-Drain Reverse Recovery Time trr IF = 2.1 A, dI/dt = 100 A/µs 46 80

Output Characteristics

0

10

20

30

40

50

0 2 4 6 8 10

VDS - Drain-to-Source Voltage (V)

- Dra

in C

urre

nt (

A)

I D

VGS = 10 V thru 6 V

5 V

4, 3 V

Transfer Characteristics

0

10

20

30

40

50

0 1 2 3 4 5 6 7

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I D TC = 125 °C

25 °C

- 55 °C

Document Number: 70144S09-0393-Rev. F, 09-Mar-09

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Vishay SiliconixSi4450DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.01

0.02

0.03

0.04

0.05

0 10 20 30 40 50

- O

n-R

esis

tanc

e(Ω

)R

DS

(on)

ID - Drain Current (A)

VGS = 10 V

VGS = 6 V

0

2

4

6

8

10

0 7 14 21 28 35

- G

ate-

to-S

ourc

e V

olta

ge (

V)

Qg - Total Gate Charge (nC)

VG

S

VGS = 30 VID = 7.5 A

VSD - Source-to-Drain Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

TJ = 150 °C TJ = 25 °C

20

10

1

0 0.2 0.4 0.6 0.8 1.0 1.2

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

400

800

1200

1600

2000

2400

0 10 20 30 40 50 60

VDS - Drain-to-Source Voltage (V)

C -

Cap

acita

nce

(pF

)

Crss

Coss

Ciss

0.0

0.4

0.8

1.2

1.6

2.0

- 50 - 25 0 25 50 75 100 125 150

VGS = 10 VID = 7.5 A

TJ - Junction Temperature (°C)

(Nor

mal

ized

)

- O

n-R

esis

tanc

eR

DS

(on)

- O

n-R

esis

tanc

e(Ω

)R

DS

(on)

VGS - Gate-to-Source Voltage (V)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

4 5 6 7 8 9 10

ID = 7.5 A

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Document Number: 70144S09-0393-Rev. F, 09-Mar-09

Vishay SiliconixSi4450DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?70144.

Threshold VoltageTJ - Temperature (°C)

- 1.0

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

0.6

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

Var

ianc

e (V

)V

GS

(th)

Single Pulse PowerTime (s)

Pow

er (

W)

0

20

40

60

80

100

0.01 0.10 1.00 10.00

Normalized Thermal Transient Impedance, Junction-to-AmbientSquare Wave Pulse Duration (s)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

2

1

0.1

0.0110-4 10-3 10-2 10-1 1 10 30

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 50 °C/W

3. TJM - TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

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Revision: 08-Feb-17 1 Document Number: 91000

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