Metal Ag Al Au Cs Cu Li Mg Na

Φ(eV)

4.26 4.28 5.1 2.14 4.65 2.3 3.7 2.75

EF0(eV)

5.5 11.7 5.5 1.58 7.0 4.7 7.1 3.2

Table 4.1 The Fermi energy and work function of selected metals.

From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)http://Materials.Usask.Ca

Metal Ag Au Bi Cu K Li Na Ni Pt Zn

me*/me 0.99 1.10 0.047 1.01 1.12 1.28 1.2 28 13 0.85

Table 4.2 The effective mass me* of electrons in some metals.

From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)http://Materials.Usask.Ca

S at 0 !C

"#V K-1)

S at 27 !C

"#V K-1)

EF

(eV)

x

Al –1.6 –1.8 11.6 2.78

Au +1.79 +1.94 5.5 –1.48

Cu +1.70 +1.84 7.0 –1.79

K -12.5 2.0 3.8

Li +14 4.7 –9.7

Mg –1.3 7.1 1.38

Na –5 3.1 2.2

Pd –9.00 –9.99

Pt –4.45 –5.28

Table 4.3 Seebeck coefficients of selected metals (from various sources)

From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)http://Materials.Usask.Ca

Material

emf, mV At 100 !C

emf, mV At 200 !C

Copper, Cu 0.76 1.83

Aluminum, Al 0.42 1.06

Nickel, Ni –1.48 –3.10

Palladium, Pd –0.57 –1.23

Platinum, Pt 0 0

Silver, Ag 0.74 1.77

Alumel –1.29 –2.17

Chromel 2.81 5.96

Constantan –3.51 –7.45

Iron, Fe 1.89 3.54

90%Pt-10%Rh (Platinum-Rhodium)

0.643 1.44

Table 4.4 Thermoelectric emf for metals at 100 and 200 °C with respect to Pt and the reference junction at 0 °C.

From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)http://Materials.Usask.Ca

Crystal Ag Be Cu Diamond Ge Hg Si W

TD (K) 215 1000 315 1860 360 100 625 310

Cm (J K-1 mol-1) 25.6 16.46 24.5 6.48 23.38 27.68 19.74 24.45

cs (J K-1 g-1) 0.237 1.825 0.385 0.540 0.322 0.138 0.703 0.133

$ (W m-1 K-1) 429 183 385 1000 60 8.65 148 173

Table 4.5 Debye temperatures (TD), heat capacities and thermal conductivities of selected elements. Cm, cs and κ are at 25 °C. TD is obtained by fitting the Debye curve to the experimental molar heat capacity data at the point Cm = 1/2(3R).

Source: TD data from J. De Launay, Solid State Physics Vol. 2 ed. F. Seitz and D. Turnbull. (Academic Press, New York, 1956).

From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)http://Materials.Usask.Ca