J. A. Misewich et al ., Science 300 , 783 (2003)
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Electrically induced Optical Emission from Ambipolar CNT FET J. A. Misewich et al., Science 300, 783 (2003) M. Freitag et al., Phys. Rev. Lett. 93, 7 (2004)
description
J. A. Misewich et al ., Science 300 , 783 (2003) M. Freitag et al ., Phys. Rev. Lett. 93 , 7 (2004). p + silicon substrate. *Heinze et al. , Phys. Rev. Lett. 89 , 10 (2002). cos 2 θ. Nanotube axis. Drain. Source. I sd = 18 μ A. - PowerPoint PPT Presentation
Transcript of J. A. Misewich et al ., Science 300 , 783 (2003)
Electrically induced Optical Emission from Ambipolar CNT FET
J. A. Misewich et al., Science 300, 783 (2003)M. Freitag et al., Phys. Rev. Lett. 93, 7 (2004)
Device Fabrication
1.4 nm diameter s- SWNT dispersed on SiO2
Ti contacts 50 nm thick formed using optical lithography and lift-off
Annealing in argon at 850°C
TiC forms at nanotube-Ti interface → abrupt junctions
10 nm SiO2
deposited at room temperature and annealed at 400°C → 700°C
p+ silicon substrate
Ambipolar Operation
Theoretical* Experiment
*Heinze et al., Phys. Rev. Lett. 89, 10 (2002)
Infrared Emission
Nanotube axis
cos2θ
Spatially Resolved Emission
Drain
Source
Isd = 18 μA
Conclusion
Schottky barriers form at CNT-metal interface allowing for ambipolar operation when Vs < Vg < Vd
Infrared light emission observed polarized linearly along nanotube axis
Emission at a maximum when Vg = Vsd/2
Emission confined to small length ≈ 2 μm and can be spatially resolved
Questions?
