HigH-Voltage Power MoSFets - Vishay - manufacturer of ... · HigH-Voltage Power MoSFets SihG22N60S,...

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Transcript of HigH-Voltage Power MoSFets - Vishay - manufacturer of ... · HigH-Voltage Power MoSFets SihG22N60S,...

Page 1: HigH-Voltage Power MoSFets - Vishay - manufacturer of ... · HigH-Voltage Power MoSFets SihG22N60S, SihP22N60S, SihB22N60S, Sihf22N60S New 600-V MoSFets with Super Junction technology

Pr

od

uc

t S

he

et

w w w . v i s h a y . c o m

Po

we

r m

oS

fe

ts

HigH-Voltage Power MoSFetsSihG22N60S, SihP22N60S, SihB22N60S, Sihf22N60S

New 600-V MoSFets with Super Junction technologySuper Junction technology in to-220, to-247, to-220f, and to-263 Packages

Key BeNeFitS• DramaticreductionofmaximumRdS(on) at VGS = 10 V: 0.190 Ω• Ultra-lowgatecharge:Qg = 98 nc• IncreasedefficiencyforSMPS• HighEAr capability• Lowfigure-of-merit(FOM)RonxQg

• 100%avalanchetested• Highpeakcurrentcapability• dV/dtruggedness• EffectiveCoSS specified• Improvedtransconductance• Highpowerdissipationcapability

aPPliCatioNS• Powerfactorcorrection(PFC)andpulsewidthmodulation(PWM)ina

widerangeofelectronicsincluding:º LCDTVsº Pcsº Serversº Switchmode power supplies (SmPS)º telecom systems

Datasheets are available on our web site at www.vishay.comfor 600-V MOSFETs - http://www.vishay.com/doc?91373, 91393, 91394, 91395

Page 2: HigH-Voltage Power MoSFets - Vishay - manufacturer of ... · HigH-Voltage Power MoSFets SihG22N60S, SihP22N60S, SihB22N60S, Sihf22N60S New 600-V MoSFets with Super Junction technology

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pera

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etiti

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atin

g; p

ulse

wid

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mite

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max

imum

junc

tion

tem

pera

ture

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VD

D =

50

V, s

tart

ing

TJ

= 2

5 °C

, L =

13.

8 m

H, R

g =

25

Ω, I

AS =

10

A.

d.I S

D ≤

22

A, d

I/dt ≤

340

A/µ

s, V

DD ≤

VD

S, T

J ≤

150

°C.

e.1.

6 m

m fr

om c

ase.

PR

OD

UC

T S

UM

MA

RY

VD

S a

t TJ

max

. (V

)65

0

RD

S(o

n) (

Ω)

VG

S =

10

V

0.19

0

Qg

(Max

.) (

nC)

98

Qgs

(nC

)17

Qgd

(nC

)25

Con

figur

atio

nS

ingl

e

N-C

hann

el M

OS

FE

T

G

D SS

DG

TO-2

20 F

UL

LP

AK

OR

DE

RIN

G I

NF

OR

MA

TIO

NP

acka

geT

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20 F

ULL

PA

K

Lead

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b)-f

ree

SiH

F22

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S-E

3

AB

SO

LU

TE

MA

XIM

UM

RA

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GS

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25

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nles

s ot

herw

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note

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AR

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YM

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LL

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IT

Dra

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tinuo

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rain

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rent

aV

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25

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I D22

AT

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100

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13

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sed

Dra

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urre

ntb

I DM

65

Line

ar D

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Fac

tor

2W

/°C

Sin

gle

Pul

se A

vala

nche

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rgyc

EA

S

690

mJ

Rep

etiti

ve A

vala

nche

Ene

rgyb

EA

R

25

Max

imum

Pow

er D

issi

patio

nP

D25

0W

Pea

k D

iode

Rec

over

y dV

/dtd

dV/d

t 7.

3V

/ns

Ope

ratin

g Ju

nctio

n an

d S

tora

ge T

empe

ratu

re R

ange

TJ,

Tst

g-

55 to

+ 1

50

°C

Sol

derin

g R

ecom

men

datio

ns (

Pea

k T

empe

ratu

re)e

for

10 s

300

* P

b co

ntai

ning

term

inat

ions

are

not

RoH

S c

ompl

iant

, exe

mpt

ions

may

app

ly

Doc

umen

t Num

ber:

913

73w

ww

.vis

hay.

com

S09

-239

8-R

ev. B

, 16-

Nov

-09

1

Po

wer

MO

SF

ET

SiH

P22

N60

SV

isha

y S

ilico

nix

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AT

UR

ES

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igh

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of-M

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igh

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peci

fied

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prov

ed T

rans

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nce

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prov

ed t r

r/Qrr

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prov

ed G

ate

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igh

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er D

issi

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ctiv

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max

imum

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tion

tem

pera

ture

.b.

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etiti

ve r

atin

g; p

ulse

wid

th li

mite

d by

max

imum

junc

tion

tem

pera

ture

.c.

VD

D =

50

V, s

tart

ing

TJ

= 2

5 °C

, L =

13.

8 m

H, R

g =

25 Ω

, IA

S =

10

A.

d.I S

D ≤

22

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I/dt ≤

340

A/µ

s, V

DD ≤

VD

S, T

J ≤

150

°C.

e.1.

6 m

m fr

om c

ase.

PR

OD

UC

T S

UM

MA

RY

VD

S a

t TJ

max

. (V

)65

0

RD

S(o

n) (Ω

)V

GS =

10

V

0.19

0

Qg

(Max

.) (

nC)

98

Qgs

(nC

)17

Qgd

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)25

Con

figur

atio

nS

ingl

e

N-C

hann

el M

OS

FE

T

G

D S

TO

-220

GD

S

OR

DE

RIN

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NF

OR

MA

TIO

NP

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20

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(P

b)-f

ree

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P22

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3

AB

SO

LU

TE

MA

XIM

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RA

TIN

GS

TC =

25

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nles

s ot

herw

ise

note

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AR

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S

YM

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LL

IMIT

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IT

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in-S

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e V

olta

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S

± 2

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tinuo

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rain

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rent

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AT

C =

100

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13

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sed

Dra

in C

urre

ntb

I DM

65

Line

ar D

erat

ing

Fac

tor

TO

-220

2W

/°C

Sin

gle

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se A

vala

nche

Ene

rgyc

EA

S

690

mJ

Rep

etiti

ve A

vala

nche

Ene

rgyb

EA

R

25

Max

imum

Pow

er D

issi

patio

nT

O-2

20P

D25

0W

Pea

k D

iode

Rec

over

y dV

/dtd

dV/d

t 7.

3V

/ns

Ope

ratin

g Ju

nctio

n an

d S

tora

ge T

empe

ratu

re R

ange

TJ,

Tst

g-

55 to

+ 1

50

°C

Sol

derin

g R

ecom

men

datio

ns (

Pea

k T

empe

ratu

re)e

for

10 s

300

* P

b co

ntai

ning

term

inat

ions

are

not

RoH

S c

ompl

iant

, exe

mpt

ions

may

app

ly

OR

DE

RIN

G IN

FO

RM

AT

ION

Pac

kage

to-2

20

Lead

(Pb)-free

Sih

P22

N60

S-e

3

Doc

umen

t Num

ber:

913

93w

ww

.vis

hay.

com

S09

-239

8-R

ev. B

, 16-

Nov

-09

1

Po

wer

MO

SF

ET

SiH

G22

N60

SV

isha

y S

ilico

nix

FE

AT

UR

ES

•H

igh

EA

R C

apab

ility

•Lo

wer

Fig

ure-

of-M

erit

Ron

x Q

g

•10

0 %

Ava

lanc

he T

este

d

•H

igh

Pea

k C

urre

nt C

apab

ility

•dV

/dt R

ugge

dnes

s

•E

ffect

ive

Cos

s S

peci

fied

•Im

prov

ed T

rans

cond

ucta

nce

•Im

prov

ed t r

r/Qrr

•Im

prov

ed G

ate

Cha

rge

•H

igh

Pow

er D

issi

patio

n C

apab

ility

•C

ompl

iant

to R

oHS

Dire

ctiv

e 20

02/9

5/E

C

No

tes

a.Li

mite

d by

max

imum

junc

tion

tem

pera

ture

.b.

Rep

etiti

ve r

atin

g; p

ulse

wid

th li

mite

d by

max

imum

junc

tion

tem

pera

ture

.c.

VD

D =

50

V, s

tart

ing

TJ

= 2

5 °C

, L =

13.

8 m

H, R

g =

25 Ω

, IA

S =

10

A.

d.I S

D ≤

22

A, d

I/dt ≤

340

A/µ

s, V

DD ≤

VD

S, T

J ≤

150

°C.

e.1.

6 m

m fr

om c

ase.

PR

OD

UC

T S

UM

MA

RY

VD

S a

t TJ

max

. (V

)65

0

RD

S(o

n) (Ω

)V

GS =

10

V

0.19

0

Qg

(Max

.) (

nC)

98

Qgs

(nC

)17

Qgd

(nC

)25

Con

figur

atio

nS

ingl

e

N-C

hann

el M

OS

FE

T

G

D S

TO

-247

GD

S

OR

DE

RIN

G I

NF

OR

MA

TIO

NP

acka

geT

O-2

47

Lead

(P

b)-f

ree

SiH

G22

N60

S-E

3

AB

SO

LU

TE

MA

XIM

UM

RA

TIN

GS

TC =

25

°C, u

nles

s ot

herw

ise

note

dP

AR

AM

ET

ER

S

YM

BO

LL

IMIT

UN

IT

Dra

in-S

ourc

e V

olta

ge

VD

S60

0V

G

ate-

Sou

rce

Vol

tage

VG

S

± 2

0

Con

tinuo

us D

rain

Cur

rent

aV

GS a

t 10

VT

C =

25

°C

I D22

AT

C =

100

°C

13

Pul

sed

Dra

in C

urre

ntb

I DM

65

Line

ar D

erat

ing

Fac

tor

TO

-247

2W

/°C

Sin

gle

Pul

se A

vala

nche

Ene

rgyc

EA

S

690

mJ

Rep

etiti

ve A

vala

nche

Ene

rgyb

EA

R

25

Max

imum

Pow

er D

issi

patio

nT

O-2

47P

D25

0W

Pea

k D

iode

Rec

over

y dV

/dtd

dV/d

t 7.

3V

/ns

Ope

ratin

g Ju

nctio

n an

d S

tora

ge T

empe

ratu

re R

ange

TJ,

Tst

g-

55 to

+ 1

50

°C

Sol

derin

g R

ecom

men

datio

ns (

Pea

k T

empe

ratu

re)e

for

10 s

300

* P

b co

ntai

ning

term

inat

ions

are

not

RoH

S c

ompl

iant

, exe

mpt

ions

may

app

ly

OR

DE

RIN

G IN

FO

RM

AT

ION

Pac

kage

to-2

47

Lead

(Pb)-free

Sih

G22

N60

S-e

3

Doc

umen

t Num

ber:

913

94w

ww

.vis

hay.

com

SP

endi

ng-R

ev. A

, 10-

Dec

-09

Wor

k-in

-Pro

gres

s1

Po

wer

MO

SF

ET

SiH

F22

N60

SV

isha

y S

ilico

nix

FE

AT

UR

ES

•H

igh

EA

R C

apab

ility

•Lo

wer

Fig

ure-

of-M

erit

Ron

x Q

g

•10

0 %

Ava

lanc

he T

este

d

•H

igh

Pea

k C

urre

nt C

apab

ility

•dV

/dt R

ugge

dnes

s

•E

ffect

ive

Cos

s S

peci

fied

•Im

prov

ed T

rans

cond

ucta

nce

•Im

prov

ed t r

r/Qrr

•Im

prov

ed G

ate

Cha

rge

•H

igh

Pow

er D

issi

patio

n C

apab

ility

•C

ompl

iant

to R

oHS

Dire

ctiv

e 20

02/9

5/E

C

No

tes

a.Li

mite

d by

max

imum

junc

tion

tem

pera

ture

.b.

Rep

etiti

ve r

atin

g; p

ulse

wid

th li

mite

d by

max

imum

junc

tion

tem

pera

ture

.c.

VD

D =

50

V, s

tart

ing

TJ

= 2

5 °C

, L =

13.

8 m

H, R

g =

25

Ω, I

AS =

10

A.

d.I S

D ≤

22

A, d

I/dt ≤

340

A/µ

s, V

DD ≤

VD

S, T

J ≤

150

°C.

e.1.

6 m

m fr

om c

ase.

PR

OD

UC

T S

UM

MA

RY

VD

S a

t TJ

max

. (V

)65

0

RD

S(o

n) (

Ω)

VG

S =

10

V

0.19

0

Qg

(Max

.) (

nC)

98

Qgs

(nC

)17

Qgd

(nC

)25

Con

figur

atio

nS

ingl

e

N-C

hann

el M

OS

FE

T

G

D SS

DG

TO-2

20 F

UL

LP

AK

OR

DE

RIN

G I

NF

OR

MA

TIO

NP

acka

geT

O-2

20 F

ULL

PA

K

Lead

(P

b)-f

ree

SiH

F22

N60

S-E

3

AB

SO

LU

TE

MA

XIM

UM

RA

TIN

GS

TC =

25

°C, u

nles

s ot

herw

ise

note

dP

AR

AM

ET

ER

S

YM

BO

LL

IMIT

UN

IT

Dra

in-S

ourc

e V

olta

ge

VD

S60

0V

G

ate-

Sou

rce

Vol

tage

VG

S

± 2

0

Con

tinuo

us D

rain

Cur

rent

aV

GS a

t 10

VT

C =

25

°C

I D22

AT

C =

100

°C

13

Pul

sed

Dra

in C

urre

ntb

I DM

65

Line

ar D

erat

ing

Fac

tor

2W

/°C

Sin

gle

Pul

se A

vala

nche

Ene

rgyc

EA

S

690

mJ

Rep

etiti

ve A

vala

nche

Ene

rgyb

EA

R

25

Max

imum

Pow

er D

issi

patio

nP

D25

0W

Pea

k D

iode

Rec

over

y dV

/dtd

dV/d

t 7.

3V

/ns

Ope

ratin

g Ju

nctio

n an

d S

tora

ge T

empe

ratu

re R

ange

TJ,

Tst

g-

55 to

+ 1

50

°C

Sol

derin

g R

ecom

men

datio

ns (

Pea

k T

empe

ratu

re)e

for

10 s

300

* P

b co

ntai

ning

term

inat

ions

are

not

RoH

S c

ompl

iant

, exe

mpt

ions

may

app

ly

OR

DE

RIN

G IN

FO

RM

AT

ION

Pac

kage

TO-220

FULL

PAK

Lead

(Pb)-free

Sih

f22N

60S

-e3

Doc

umen

t Num

ber:

913

95w

ww

.vis

hay.

com

S09

-257

0-R

ev. A

, 07-

Dec

-09

1

Po

wer

MO

SF

ET

SiH

B22

N60

SV

isha

y S

ilico

nix

FE

AT

UR

ES

•H

igh

EA

R C

apab

ility

•Lo

wer

Fig

ure-

of-M

erit

Ron

x Q

g

•10

0 %

Ava

lanc

he T

este

d

•H

igh

Pea

k C

urre

nt C

apab

ility

•dV

/dt R

ugge

dnes

s

•E

ffect

ive

Cos

s S

peci

fied

•Im

prov

ed T

rans

cond

ucta

nce

•Im

prov

ed t r

r/Qrr

•Im

prov

ed G

ate

Cha

rge

•H

igh

Pow

er D

issi

patio

n C

apab

ility

•C

ompl

iant

to R

oHS

Dire

ctiv

e 20

02/9

5/E

C

No

tes

a.Li

mite

d by

max

imum

junc

tion

tem

pera

ture

.b.

Rep

etiti

ve r

atin

g; p

ulse

wid

th li

mite

d by

max

imum

junc

tion

tem

pera

ture

.c.

VD

D =

50

V, s

tart

ing

TJ

= 2

5 °C

, L =

13.

8 m

H, R

g =

25 Ω

, IA

S =

10

A.

d.I S

D ≤

22

A, d

I/dt ≤

340

A/µ

s, V

DD ≤

VD

S, T

J ≤

150

°C.

e.1.

6 m

m fr

om c

ase.

PR

OD

UC

T S

UM

MA

RY

VD

S a

t TJ

max

. (V

)65

0

RD

S(o

n) (Ω

)V

GS =

10

V

0.19

0

Qg

(Max

.) (

nC)

98

Qgs

(nC

)17

Qgd

(nC

)25

Con

figur

atio

nS

ingl

e

N-C

hann

el M

OS

FE

T

G

D S

D2 P

AK

(T

O-2

63)

GD

S

OR

DE

RIN

G I

NF

OR

MA

TIO

NP

acka

geD

2 PA

K (

TO

-263

)

Lead

(P

b)-f

ree

SiH

B22

N60

S-E

3

AB

SO

LU

TE

MA

XIM

UM

RA

TIN

GS

TC =

25

°C, u

nles

s ot

herw

ise

note

dP

AR

AM

ET

ER

S

YM

BO

LL

IMIT

UN

IT

Dra

in-S

ourc

e V

olta

ge

VD

S60

0V

G

ate-

Sou

rce

Vol

tage

VG

S

± 2

0

Con

tinuo

us D

rain

Cur

rent

aV

GS a

t 10

VT

C =

25

°C

I D22

AT

C =

100

°C

13

Pul

sed

Dra

in C

urre

ntb

I DM

65

Line

ar D

erat

ing

Fac

tor

D2 P

AK

(T

O-2

63)

2W

/°C

Sin

gle

Pul

se A

vala

nche

Ene

rgyc

EA

S

690

mJ

Rep

etiti

ve A

vala

nche

Ene

rgyb

EA

R

25

Max

imum

Pow

er D

issi

patio

nD

2 PA

K

(TO

-263

)P

D25

0W

Pea

k D

iode

Rec

over

y dV

/dtd

dV/d

t 7.

3V

/ns

Ope

ratin

g Ju

nctio

n an

d S

tora

ge T

empe

ratu

re R

ange

TJ,

Tst

g-

55 to

+ 1

50

°C

Sol

derin

g R

ecom

men

datio

ns (

Pea

k T

empe

ratu

re)e

for

10 s

300

* P

b co

ntai

ning

term

inat

ions

are

not

RoH

S c

ompl

iant

, exe

mpt

ions

may

app

ly

OR

DE

RIN

G IN

FO

RM

AT

ION

Pac

kage

d2 P

AK(T

O-263

)

Lead

(Pb)-free

Sih

B22

N60

S-e

3

Doc

umen

t Num

ber:

913

73w

ww

.vis

hay.

com

S09

-239

8-R

ev. B

, 16-

Nov

-09

1

Po

wer

MO

SF

ET

SiH

P22

N60

SV

isha

y S

ilico

nix

FE

AT

UR

ES

•H

igh

EA

R C

apab

ility

•Lo

wer

Fig

ure-

of-M

erit

Ron

x Q

g

•10

0 %

Ava

lanc

he T

este

d

•H

igh

Pea

k C

urre

nt C

apab

ility

•dV

/dt R

ugge

dnes

s

•E

ffect

ive

Cos

s S

peci

fied

•Im

prov

ed T

rans

cond

ucta

nce

•Im

prov

ed t r

r/Qrr

•Im

prov

ed G

ate

Cha

rge

•H

igh

Pow

er D

issi

patio

n C

apab

ility

•C

ompl

iant

to R

oHS

Dire

ctiv

e 20

02/9

5/E

C

No

tes

a.Li

mite

d by

max

imum

junc

tion

tem

pera

ture

.b.

Rep

etiti

ve r

atin

g; p

ulse

wid

th li

mite

d by

max

imum

junc

tion

tem

pera

ture

.c.

VD

D =

50

V, s

tart

ing

TJ

= 2

5 °C

, L =

13.

8 m

H, R

g =

25 Ω

, IA

S =

10

A.

d.I S

D ≤

22

A, d

I/dt ≤

340

A/µ

s, V

DD ≤

VD

S, T

J ≤

150

°C.

e.1.

6 m

m fr

om c

ase.

PR

OD

UC

T S

UM

MA

RY

VD

S a

t TJ

max

. (V

)65

0

RD

S(o

n) (Ω

)V

GS =

10

V

0.19

0

Qg

(Max

.) (

nC)

98

Qgs

(nC

)17

Qgd

(nC

)25

Con

figur

atio

nS

ingl

e

N-C

hann

el M

OS

FE

T

G

D S

TO

-220

GD

S

OR

DE

RIN

G I

NF

OR

MA

TIO

NP

acka

geT

O-2

20

Lead

(P

b)-f

ree

SiH

P22

N60

S-E

3

AB

SO

LU

TE

MA

XIM

UM

RA

TIN

GS

TC =

25

°C, u

nles

s ot

herw

ise

note

dP

AR

AM

ET

ER

S

YM

BO

LL

IMIT

UN

IT

Dra

in-S

ourc

e V

olta

ge

VD

S60

0V

G

ate-

Sou

rce

Vol

tage

VG

S

± 2

0

Con

tinuo

us D

rain

Cur

rent

aV

GS a

t 10

VT

C =

25

°C

I D22

AT

C =

100

°C

13

Pul

sed

Dra

in C

urre

ntb

I DM

65

Line

ar D

erat

ing

Fac

tor

TO

-220

2W

/°C

Sin

gle

Pul

se A

vala

nche

Ene

rgyc

EA

S

690

mJ

Rep

etiti

ve A

vala

nche

Ene

rgyb

EA

R

25

Max

imum

Pow

er D

issi

patio

nT

O-2

20P

D25

0W

Pea

k D

iode

Rec

over

y dV

/dtd

dV/d

t 7.

3V

/ns

Ope

ratin

g Ju

nctio

n an

d S

tora

ge T

empe

ratu

re R

ange

TJ,

Tst

g-

55 to

+ 1

50

°C

Sol

derin

g R

ecom

men

datio

ns (

Pea

k T

empe

ratu

re)e

for

10 s

300

* P

b co

ntai

ning

term

inat

ions

are

not

RoH

S c

ompl

iant

, exe

mpt

ions

may

app

ly