High side smart power solid state relay · HIGH SIDE SMART POWER SOLID STATE RELAY ... In = Nominal...
Transcript of High side smart power solid state relay · HIGH SIDE SMART POWER SOLID STATE RELAY ... In = Nominal...
VN31SP
HIGH SIDE SMART POWER SOLID STATE RELAY
September 2013
BLOCK DIAGRAM
TYPE VDSS RDS(on) In(*) VCC
VN31SP 60 V 0.03 Ω 11.5 A 26 V
MAXIMUM CONTINUOUS OUTPUTCURRENT (#):31 A @ Tc=85oC
5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST
DEMAGNETIZATION VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION The VN31SP is a monolithic device made usingSTMicroelectronics VIPower Technology,intended for driving resistive or inductive loadswith one side grounded.Built-in thermal shut-down protects the chip fromover temperature and short circuit. The open drain diagnostic output indicates: openload in off state, and in on state, output shorted to
VCC and overtemperature. Fast demagnetizationof inductive loads is archivied by negative (-18V)load voltage at turn-off.
®
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PowerSO-10
(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1)(#) The maximum continuous output current is the the current at Tc = 85 oC for a battery voltage of 13V which does not activate selfprotection.
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ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Breakdown Voltage 60 V
IOUT Output Current (cont.) at Tc = 85 oC 31 A
IR Reverse Output Current at Tc = 85 oC -31 A
IIN Input Current ±10 mA
-VCC Reverse Supply Voltage -4 V
ISTAT Status Current ±10 mA
VESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Ptot Power Dissipation at Tc = 85 oC 54 W
Tj Junction Operating Temperature -40 to 150 oC
Tstg Storage Temperature -55 to 150 oC
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient ($) Max
1.250
oC/WoC/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCC Supply Voltage 5.5 13 26 V
In(*) Nominal Current Tc = 85 oC VDS(on) ≤ 0.5 (note 1) 11.5 A
Ron On State Resistance IOUT = 11.5 AIOUT = 11.5 A Tj = 25 oC
0.060.03
ΩΩ
IS Supply Current Off State Tj ≥ 25 oCOn State
5015
µAmA
VDS(MAX) Maximum Voltage Drop IOUT = 25 A Tc = 85 oC 1.5 V
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)(^) Turn-on Delay Time OfOutput Current
IOUT = 11.5 A Resistive LoadInput Rise Time < 0.1 µs
90 µs
tr(^) Rise Time Of OutputCurrent
IOUT = 11.5A Resistive LoadInput Rise Time < 0.1 µs
100 µs
td(off)(^) Turn-off Delay Time OfOutput Current
IOUT = 11.5 A Resistive LoadInput Rise Time < 0.1 µs
140 µs
tf(^) Fall Time Of OutputCurrent
IOUT = 11.5 A Resistive LoadInput Rise Time < 0.1 µs
50 µs
(di/dt)on Turn-on Current Slope IOUT = 11.5 AIOUT = IOV
0.08 0.51
A/µsA/µs
(di/dt)off Turn-off Current Slope IOUT = 11.5 AIOUT = IOV
0.2 33
A/µsA/µs
Vdemag Inductive Load ClampVoltage
IOUT = 11.5 A L = 1 mH -24 -18 -14 V
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIL Input Low LevelVoltage
0.8 V
VIH Input High LevelVoltage
2 (•) V
VI(hyst.) Input HysteresisVoltage
0.5 V
IIN Input Current VIN = 5 VVIN = 2 VVIN = 0.8 V 25
250 500250
µAµAµA
VICL Input Clamp Voltage IIN = 10 mAIIN = -10 mA
5.5 6-0.7 -0.3
VV
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ELECTRICAL CHARACTERISTICS (continued)PROTECTION AND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSTAT Status Voltage OutputLow
ISTAT = 1.6 mA 0.4 V
VUSD Under Voltage ShutDown
5 V
VSCL Status Clamp Voltage ISTAT = 10 mAISTAT = -10 mA
6-0.7
VV
IOV Over Current RLOAD < 10 mΩ -40 Tc 125 oC 140 A
IAV Average Current in Short Circuit
RLOAD < 10 mΩ Tc = 85 oC 2.5 A
IOL Open Load CurrentLevel
5 600 1250 mA
TTSD Thermal Shut-downTemperature
140 oC
TR Reset Temperature 125 oC
VOL Open Load VoltageLevel
Off-State (note 2) 2.5 3.75 5 V
t1(on) Open Load FilteringTime
(note 3) 1 5 10 ms
t1(off) Open Load FilteringTime
(note 3) 1 5 10 ms
t2(off) Open Load FilteringTime
(note 3) 1 5 10 ms
tpovl Status Delay (note 3) 5 10 µs
tpol Status Delay (note 3) 50 700 µs(^) See Switchig Time Waveforms() The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to notexceed 10 mA at the input pin.note 1: The Nominal Current is the current at Tc = 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 Vnote 2: IOL(off) = (VCC -VOL)/ROL (see figure)note 3: t1(on): minimum open load duration which acctivates the status outputt1(off): minimum load recovery time which desactivates the status outputt2(off): minimum on time after thermal shut down which desactivates status output tpovl tpol: ISO definition (see figure)
Note 2 Relevant Figure Note 3 Relevant Figure
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FUNCTIONAL DESCRIPTION The device has a diagnostic output whichindicates open load conditions in off state as wellas in on state, output shorted to VCC andovertemperature. The truth table shows input,diagnostic and output voltage level in normaloperation and in fault conditions. The outputsignals are processed by internal logic. Theopen load diagnostic output has a 5 ms filtering.The filter gives a continuous signal for the faultcondition after an initial delay of about 5 ms. Thismeans that a disconnection during normaloperation, with a duration of less than 5 ms doesnot affect the status output. Equally, anyre-connection of less than 5 ms during adisconnection duration does not affect the statusoutput. No delay occur for the status to go low incase of overtemperature conditions. From thefalling edge of the input signal the status outputinitially low in fault condition (over temperature oropen load) will go back with a delay (tpovl)in caseof overtemperature condition and a delay (tpol) incase of open load. These feature fully complywith International Standard Office (I.S.O.)requirement for automotive High Side Driver.To protect the device against short circuit andover current conditions, the thermal protectionturns the integrated Power MOS off at aminimum junction temperature of 140 oC.When the temperature returns to 125 oC theswitch is automatically turned on again. In shortcircuit the protection reacts with virtually nodelay, the sensor being located in the region ofthe die where the heat is generated. Drivinginductive loads, an internal function of thedevice ensures the fast demagnetization with a
typical voltage (Vdemag) of -18V. This function allows to greatly reduce the powerdissipation according to the formula:Pdem = 0.5 • Lload • (Iload)2• [(VCC+Vdemag)/Vdemag]•fwhere f = switching frequency and Vdemag = demagnetization voltageBased on this formula it is possible to knowthe value of inductance and/or current to avoida thermal shut-down. The maximum inductancewhich causes the chip temperature to reach theshut down temperature in a specific thermalenvironment, is infact a function of the loadcurrent for a fixed VCC, Vdemag and f.
PROTECTING THE DEVICE AGAIST LOADDUMP - TEST PULSE 5 The device is able to withstand the test pulseNo. 5 at level II (Vs = 46.5V) according to theISO T/R 7637/1 without any externalcomponent. This means that all functions of thedevice are performed as designed afterexposure to disturbance at level II. The VN06SPis able to withstand the test pulse No.5 at levelIII adding an external resistor of 150 ohmbetween GND pin and ground plus a filtercapacitor of 1000 µF between VCC pin andground (if RLOAD ≤ 20 Ω).
PROTECTING THE DEVICE AGAINSTREVERSE BATTERY The simplest way to protect the device against acontinuous reverse battery voltage (-26V) is toinsert a Schottky diode between GND pin andground, as shown in the typical application circuit(fig.3). The consequences of the voltage drop acrossthis diode are as follows:If the input is pulled to power GND, a negativevoltage of -Vf is seen by the device. (Vil, Vihthresholds and Vstat are increased by Vf withrespect to power GND). The undervoltage shutdown level is increa- sedby Vf. If there is no need for the control unit to handleexternal analog signals referred to the powerGND, the best approach is to connect thereference potential of the control unit to node [6](see application circuit in fig. 4), which becomesthe common signal GND for the whole controlboard avoiding shift of Vih, Vil and Vstat. Thissolution allows the use of a standard diode.
Switching Time Waveforms
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TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation LH
LH
HH
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H
Short load to VCC L H L
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
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Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
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DIM.mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α 0o 8o
DETAIL "A"
PLANESEATING
α
L
A1F
A1
h
A
D
D1= =
= =
= =
E4
0.10 A
E1E3
C
Q
A
=
=
B
B
DETAIL "A"
SEATING PLANE
=
=
=
=E2
610
51
e B
H E
M0.25
= =
= =
0068039-C
PowerSO-10 MECHANICAL DATA
VN31SP
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DocID1099 Rev 2 9/9
VN31SP
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