High h OW CE FE 2SC3852/3852A - · PDF file78 High hFE 2SC3852/3852A LOW VCE (sat)...

1

Click here to load reader

Transcript of High h OW CE FE 2SC3852/3852A - · PDF file78 High hFE 2SC3852/3852A LOW VCE (sat)...

Page 1: High h OW CE FE 2SC3852/3852A - · PDF file78 High hFE 2SC3852/3852A LOW VCE (sat) IC–VCE Characteristics (Typical) hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics

78

2SC3852/3852AHigh hFELOW VCE (sat)

IC–VCE Characteristics (Typical)

hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j -a–t Characteristics

IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)

Pc–Ta Derating

00

1

2

3

21 3 4 5 6

Col lector-Emit ter Vol tage VCE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

I B=12mA

0.5mA

1mA

2mA

3mA

5mA

8mA

Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)

0.01 0.1 0.5 1 3100

500

2000

1000

Col lector Current IC(A)

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

Typ

0.01 0.1 0.5 1 3100

500

2000

1000

Col lector Current IC(A)

DC

Cu

rre

nt

Ga

in h

FE

(VCE=4V)

0.5

1

5

1 10 100 1000

VCB=10VIE=–2A

Time t(ms)

Tra

nsie

nt T

herm

al R

esis

tanc

e θj

-a(˚

C/W

)

10 503 5 1000.05

0.1

1

0.5

10

5

Col lector-Emit ter Vol tage VCE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

Wi thout HeatsinkNatural Cool ing

DC

100ms

10ms

1ms

0

1.0

1.0

0.5

0.001 0.005 0.01 0.10.05 10.5

Base Current IB(A)

Co

lle

cto

r-E

mit

ter

Sa

tura

tio

n V

olt

ag

e V

CE

(sa

t)(V

)

I C=1A

2A

3A

0

2

3

1

0 1.11.00.5

Base-Emit tor Vol tage VBE(V)

Co

lle

cto

r C

urr

en

t IC

(A)

(VCE=4V)

125˚

C (C

ase

Tem

p)25

˚C (

Cas

e T

emp)

–30˚

C (

Cas

e T

emp)

25˚C

–30˚C

125˚C

–0.005 –0.01 –0.1 –0.5–0.05 –2–1

20

10

0

30

Cu

t-o

ff F

req

ue

nc

y f

T(M

HZ)

(VCE=12V)

Emit ter Current IE(A)

Typ

30

20

10

00 50 100 150

Ambient Temperature Ta(˚C)

Ma

xim

um

Po

we

r D

iss

ipa

tio

n P

C(W

)

Wi th Inf in i te heatsink

Without Heatsink

Silicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose

Typical Switching Characteristics (Common Emitter)

VCC(V)

20

RL(Ω)

20

IC(A)

1.0

VBB2(V)

–5

IB2(mA)

–30

ton(µs)

0.8typ

tstg(µs)

3.0typ

tf(µs)

1.2typ

IB1(mA)

15

VBB1(V)

10

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

6

3

1

25(Tc=25°C)

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

Absolute maximum ratings Electrical Characteristics

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

2SC3852

80

60min

Unit

µA

V

µA

V

V

MHz

pF

Conditions

VCB=

VEB=6V

IC=25mA

VCE=4V, IC=0.5A

IC=2A, IB=50mA

VCE=12V, IE=–0.2A

VCB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

2SC3852A

100

80min

100max

500min

0.5max

15typ

50typ

External Dimensions FM20(TO220F)

ø3.3±0.2

10.1±0.2

4.0±

0.2

16.9

±0.

313

.0m

in

8.4±

0.2

0.8±

0.2

3.9

±0.

2

2.542.54

1.35±0.15

0.85+0.2-0.1

1.35±0.15

2.2±0.2

4.2±0.2

2.8 c0.5

2.4±0.20.45+0.2-0.1

B EC

ab

Weight : Approx 2.0ga. Part No.b. Lot No.

10max

2SC3852

80

60

2SC3852A

100

80

Ratings Ratings