Full time job in Analog/ Mixed-Signal/ RF IC Design ∆Σ ......... Graduate Electrical Engineering...

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Mansoorali Companywala 615 S Hardy Dr, #216, Tempe, AZ-85281. [email protected] / 602-810-7450 Summary: Graduate Electrical Engineering student seeking an Full time job in Analog/ Mixed-Signal/ RF IC Design. Experienced in transistor level design & layout of Analog & RF IC such as PLL, ∆Σ ADC, Pipeline ADC, Cyclic ADC, VCO, RF Power Amplifiers, LNA, Mixer, Op-Amps, OTA, Bandgap Reference, LDO Regulators & Switched Capacitor Analog Filters. Education: Master of Science in Electrical Engineering August’13 – May ‘15 Arizona State University, Tempe, AZ GPA: 4.0/4.0 Bachelor of Technology in Electronics Engineering July ’08 – May ‘12 Mumbai University, Veermata Jijabai Technological Institute GPA: 8.7/10 Work Experience: Cambridge Silicon Radio (CSR) - Analog/RF IC Design Intern Jan '15 - May '15 RF Power Amplifier for Bluetooth 5.0 Verilog AMS modeling of phase noise in PLL for Bluetooth 5.0. High Speed Dynamic Comparator design in 40nm CMOS process: 3Gsps, (1σ) offset & 24uW power at 1.2V. ON Semiconductor - Analog Design Engineer Intern June '14 – Aug '14 Fabricated 92dB 1GHz Gain Boosted Amplifier in 0.18um CMOS ONC18 process. - UGBW: 1GHz, DC Gain: 92dB, Phase Margin: 60deg, Power: 5.4mW. Output Swing: 0.6V to 1.5V. Vdd: 1.8V. - Layout in deep n-well process with isolated n-well for clocks, amplifier and switch capacitor circuit. Pipeline ADC: 11bit ENOB 80Msps 66.6dB SNDR in 0.18um ONC18 process - Montecarlo simulation with process & mismatch shows 3σ variation of ENOB equal to 0.6bits. Fs: 80Msps. Power 50mW. - Utilized above designed 92dB 1GHz Gain Boosted Telescopic Cascode OTA for MDAC stage of ADC. Cyclic ADC: 8.7bit ENOB 13.33Msps 2 stage in 0.18um ONC18 process. - Montecarlo simulation with process & mismatch shows ENOB 3 sigma variation of 0.8 bits. Analog bench validation of load current Amplifier and RF receive chain consisting of Common Gate LNA, Mixer, and Differential LC ladder simulated Gm-C Bandpass filter. Cypress Semiconductor - Applications Engineer June’ 12 – June’ 13 Developed and debugged systems based on USB 3.0 controllers, CapSense Controllers, PowerPSoC and PLC Controllers. Failure Analysis of Capacitive touch sensing based controller chips and observed the cause of failure as RTN’s (Random Telegraphy Noise). Projects: Sept ’13 –Dec‘14 RF Power Amplifier design in ADS: Class A-B & Class F with load pull Characterization. 3-10 GHz Ultra-wide band LNA employing 3-section Chebyshev Bandpass filter for wideband input matching. Noise Figure<5dB, IIP3 >-5dBm, Vdd: 1.8V, Supply Current: 13mA, S21: 16dB, S11 and S22 < -10dB. 2.4GHz Gilbert Cell Mixer using 0.18um IBM7RF Technology. IIP3: 5dBm, NF: 10dB, Conversion Gain: 10dB, Power: 10mW, S11: -30dB. 80MHz - 1.6GHz Adaptive Phase Locked Loop. Freq: 80MHz - 1.6GHz, Power: 6mW, Period Jitter: 10ps, Absolute Jitter: 35ps, Cycle-to-Cycle Jitter: 2ps with 50mV square wave supply noise at 1MHz. Layout Area: 0.1mm 2 Low Drop-out Voltage Regulator: 1.5A 1.25V- 2.5V Design & Post Layout Verification. I(load):0-1.5A, PSRR: 50dB at 10KHz, Vdo: 400mV, CL:1uF, I(Quiescent): 400uA. Loop Gain (Iout: 1.5A): 50dB. Loop Phase Margin: 60 o . Process Corners: SS, FF, TT. Temperature: -40 o C-125 o C. Power down current: 230nA. Delta Sigma ADC: 92dB /15 bits 100KHz BW 13.5mW in 0.18um CMOS Technology SNDR: 92dB, SFDR: 74dB, Power: 13.5mW, Sampling Frequency: 100MHz, Vdd: 1.8. Switched Capacitor 6 th order Band pass filter with carrier frequency rejection. Filter attenuation: -50dB at 32.99 KHz, Pass band (2K-20KHz) ripple: +/- 2dB, Low frequency (<1K) roll-off:-40dB/decade, Input impedance: 10M, Power: 13.2mW. Low Noise Folded Cascode Op-amp with Class AB output stage. DC Gain: 90dB, UGB: 60MHz, PM: 60 o , CMRR: 85dB, PSRR: 85dB, HD3 of -50dB, Input Referred Noise: 6nV/sqHz. Bandgap Reference. PSRR: 86dB at 0.5 KHz, Vdd: 2.5+/-0.25V, Temperature: -40 o C to 170 o C, Process Corners: SS, FF, TT. Macro-modeling: Active R-C, Continuous time current mode and Gm-C based Fifth Order Butterworth filter.

Transcript of Full time job in Analog/ Mixed-Signal/ RF IC Design ∆Σ ......... Graduate Electrical Engineering...

Page 1: Full time job in Analog/ Mixed-Signal/ RF IC Design ∆Σ ......... Graduate Electrical Engineering student seeking an Full time job in Analog/ Mixed-Signal/ RF IC ... layout of Analog

Mansoorali Companywala 615 S Hardy Dr, #216, Tempe, AZ-85281. [email protected] / 602-810-7450

Summary: Graduate Electrical Engineering student seeking an Full time job in Analog/ Mixed-Signal/ RF IC Design. Experienced

in transistor level design & layout of Analog & RF IC such as PLL, ∆Σ ADC, Pipeline ADC, Cyclic ADC, VCO, RF Power

Amplifiers, LNA, Mixer, Op-Amps, OTA, Bandgap Reference, LDO Regulators & Switched Capacitor Analog Filters.

Education:

Master of Science in Electrical Engineering August’13 – May ‘15

Arizona State University, Tempe, AZ GPA: 4.0/4.0

Bachelor of Technology in Electronics Engineering July ’08 – May ‘12

Mumbai University, Veermata Jijabai Technological Institute GPA: 8.7/10

Work Experience:

Cambridge Silicon Radio (CSR) - Analog/RF IC Design Intern Jan '15 - May '15

• RF Power Amplifier for Bluetooth 5.0

• Verilog AMS modeling of phase noise in PLL for Bluetooth 5.0.

• High Speed Dynamic Comparator design in 40nm CMOS process: 3Gsps, (1σ) offset & 24uW power at 1.2V.

ON Semiconductor - Analog Design Engineer Intern June '14 – Aug '14

• Fabricated 92dB 1GHz Gain Boosted Amplifier in 0.18um CMOS ONC18 process.

- UGBW: 1GHz, DC Gain: 92dB, Phase Margin: 60deg, Power: 5.4mW. Output Swing: 0.6V to 1.5V. Vdd: 1.8V.

- Layout in deep n-well process with isolated n-well for clocks, amplifier and switch capacitor circuit.

• Pipeline ADC: 11bit ENOB 80Msps 66.6dB SNDR in 0.18um ONC18 process - Montecarlo simulation with process & mismatch shows 3σ variation of ENOB equal to 0.6bits. Fs: 80Msps. Power 50mW.

- Utilized above designed 92dB 1GHz Gain Boosted Telescopic Cascode OTA for MDAC stage of ADC.

• Cyclic ADC: 8.7bit ENOB 13.33Msps 2 stage in 0.18um ONC18 process. - Montecarlo simulation with process & mismatch shows ENOB 3 sigma variation of 0.8 bits.

• Analog bench validation of load current Amplifier and RF receive chain consisting of Common Gate LNA, Mixer, and

Differential LC ladder simulated Gm-C Bandpass filter.

Cypress Semiconductor - Applications Engineer June’ 12 – June’ 13

• Developed and debugged systems based on USB 3.0 controllers, CapSense Controllers, PowerPSoC and PLC Controllers.

• Failure Analysis of Capacitive touch sensing based controller chips and observed the cause of failure as RTN’s (Random

Telegraphy Noise).

Projects: Sept ’13 –Dec‘14

• RF Power Amplifier design in ADS: Class A-B & Class F with load pull Characterization.

• 3-10 GHz Ultra-wide band LNA employing 3-section Chebyshev Bandpass filter for wideband input matching.

Noise Figure<5dB, IIP3 >-5dBm, Vdd: 1.8V, Supply Current: 13mA, S21: 16dB, S11 and S22 < -10dB.

• 2.4GHz Gilbert Cell Mixer using 0.18um IBM7RF Technology.

IIP3: 5dBm, NF: 10dB, Conversion Gain: 10dB, Power: 10mW, S11: -30dB.

• 80MHz - 1.6GHz Adaptive Phase Locked Loop.

Freq: 80MHz - 1.6GHz, Power: 6mW, Period Jitter: 10ps, Absolute Jitter: 35ps, Cycle-to-Cycle Jitter: 2ps with 50mV square

wave supply noise at 1MHz. Layout Area: 0.1mm2

• Low Drop-out Voltage Regulator: 1.5A 1.25V- 2.5V Design & Post Layout Verification.

I(load):0-1.5A, PSRR: 50dB at 10KHz, Vdo: 400mV, CL:1uF, I(Quiescent): 400uA. Loop Gain (Iout: 1.5A): 50dB. Loop Phase

Margin: 60o. Process Corners: SS, FF, TT. Temperature: -40

oC-125

oC. Power down current: 230nA.

• Delta Sigma ADC: 92dB /15 bits 100KHz BW 13.5mW in 0.18um CMOS Technology

SNDR: 92dB, SFDR: 74dB, Power: 13.5mW, Sampling Frequency: 100MHz, Vdd: 1.8.

• Switched Capacitor 6th

order Band pass filter with carrier frequency rejection.

Filter attenuation: -50dB at 32.99 KHz, Pass band (2K-20KHz) ripple: +/- 2dB, Low frequency (<1K) roll-off:-40dB/decade,

Input impedance: 10M, Power: 13.2mW.

• Low Noise Folded Cascode Op-amp with Class AB output stage. DC Gain: 90dB, UGB: 60MHz, PM: 60

o, CMRR: 85dB, PSRR: 85dB, HD3 of -50dB, Input Referred Noise: 6nV/sqHz.

• Bandgap Reference.

PSRR: 86dB at 0.5 KHz, Vdd: 2.5+/-0.25V, Temperature: -40o C to 170

o C, Process Corners: SS, FF, TT.

• Macro-modeling: Active R-C, Continuous time current mode and Gm-C based Fifth Order Butterworth filter.