Foundry Characteristics

Ivan Peric, Monolithic Detectors for Strip Region 1

Foundry Characteristics

Ivan Peric, Monolithic Detectors for Strip Region


2

• AMS H35• Minimal gate length 350nm• Number of metals: 4• Supply voltage 3.3V• Floating gate structure – isolated NMOS and PMOS within HV deep-n-well• Standard substrate resistivity 20 Ω cm• Higher resistivity on request possible• Wafer size 8 inch• Maximal reticle size: 22cm x 26 cm• Maximal chip size: chip + test structures fit into a circle of 3.11cm diameter (1.9cm x 2.45cm

possible)• TSV possible: pitch 260 µm• ER cost: mask set: 74.790 Euro (quote 2011)

ER cost: Engineering run 8 inch Wafers (6 started, 2 guaranteed): 19.800 Euro

Ivan Peric, Monolithic Detectors for Strip Region


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• AMS H18 (actually produced by IBM as CMHV7SF)• Minimal gate length 180nm• Number of metals: 6• Supply voltage 1.8V• Floating gate structure – isolated NMOS and PMOS within HV deep-n-well• Standard substrate resistivity ~10 Ω cm• Wafer size: 8 inch• Maximal chip size: 18,73 x 20,77 – but diagonal size matters• (so far biggest 20,76 x 18,73 with distance between reticles x = 100 um und y = 700 um for test

structures)• Run price:• 32 Masks x 4.500 €/Mask = 144.000 € • Engineering run (with 6 Wafers started and 2 Wafers guaranteed): 31.350 €


AMS H35


Reticle in H35

…

Teststrukturen=scribe line

Chip

Multiple of 80µ

scribe Line (80µ)

Max. = 31112 µm ∅

22mm

26mm

d


TSV – bask side RDL

Face2Face Bumping of two Wafers (cross section)

nwellTransistor

M1

M3

M4

RDL(MET4_TSV)

H35-CMOS sensor(Wafer 2)

Thickness ~215µm

Wire bond

Bump

Wire bond pad(PAD_TSV)

0.13µ Readout Chip(Wafer 1)

Thickness ~100µm

VIAT_TSV

Read out ChipCMOS Side

SensorBackside RDL


TSV – 3D detector

Cross section

Transistor

M1

M3

M4=MTTSV

M2

M4 (METB)

Tier2 (Readout part)

VIATTSV

M1

Tier1 (Sensor part)

Transistor

M3

Bond Oxide

Face2Back wafer bonding


Pixel detectors

…

Readout chip

Detector as it is done now:Diode based pixel sensor bump-bonded to readout ASICs

Present development:CMOS pixel sensor capacitively coupled to readout ASICs

With TSVsCMOS pixel sensor with backside contactscapacitively coupled to readout ASICs

PCB

Pixel sensor(diode based)(e.g. 8 x 2cm)

CMOS pixel sensorseveral reticles(e.g. 4 x 2 cm)

Readout chip

Pixel sensor

Readout chips

Wire bond for sensor bias

Wire bonds for RO chips


Wire bonds for sensor chip

Readout chips

CMOS pixel sensor

Capacitive signal transmission CMOS pixel

sensorseveral reticles(e.g. 4 x 2 cm)

Readout chip

Wire bonds for sensor chip


CMOS pixel sensor with backside contacts

TSVs

Backside contact

PCB PCB PCB

Capacitive signal transmission


Pixel detectors with TSVs

… CMOS pixel sensorseveral reticles(e.g. 4 x 2 cm)

Readout chip TSVs

Capacitive signal transmission

Pixel sensorReadout chips

Contacts for the readout chip are fed through the sensor substrate

Bumps or capacitive signal transmission

Pixel sensor

Type A: sensor contacts on the back side

Type B: sensor- and readout chip contacts on the back side

Readout chip2x2cm

Sensor reticle1x2cm

TSV

Sensor reticle2x2cm

Sensor reticle1x2cm

Reticle-reticleConnection (power) TSVs for

sensor- and readout chip contacts


Strip detectors

..

Detector as it is done now:Diode based strip sensor wire bonded to readout ASICs Present development:

CMOS detectorWith TSVs:Advanced 3D detector with TSVs

Readout ASICLarge strip sensor (10x10cm)

100’s of wire bonds with pitch 80um

Flex PCB

CMOS sensor2x2cm

Pixels on the bottom tier(signals are multiplexed to readout lines)

Readout electronics placed on chip periphery

Flex PCB

Smaller number of wire bonds for IOs and power

Flex PCB

Readout electronics placed on top tier

TSVs (one per readout line)with a pitch of 80um connect pixels and readout electronics

Smaller number of wire bonds for IOs and power

Foundry Characteristics

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