DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr =...

5
Product Standards Schottky Barrier Diode DB2J41100L Absolute Maximum Ratings Ta = 25 C Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm) *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page °C -55 to +125 Storage temperature Tstg -40 to Topr Operating ambient temperature Internal Connection A Unit Parameter Symbol Rating Reverse voltage VR 40 Non-repetitive peak forward surge current *2 1 of 4 Unit: mm 2. Anode Short reverse recovery time trr Low forward voltage and low reverse leakage current Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: DB2J41100L Silicon epitaxial planar type For rectification Features Code 1. Cathode Panasonic SMini2-F5-B JEITA SC-90A 4R Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) IFSM Junction temperature Tj 3 Forward current (average) *1 IF(AV) 1 V °C A 125 °C +85 1 2 2.5 1.25 0.7 1.7 0.13 0.35 0.5 2 1 Doc No. TT4-EA-11487 Revision. 2 Established : 2009-10-09 Revised : 2013-04-20

Transcript of DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr =...

Page 1: DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100 of 4 Min Typ 15 100 6.8 2 Parameter Symbol Conditions UnitMax Forward

Product Standards

Schottky Barrier Diode

DB2J41100L

Absolute Maximum Ratings Ta = 25 C

Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm)

*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Page

°C-55 to +125Storage temperature Tstg-40 toToprOperating ambient temperature

Internal Connection

A

UnitParameter Symbol RatingReverse voltage VR 40

Non-repetitive peak forward surge current *2

1 of 4

Unit: mm

2. Anode

Short reverse recovery time trrLow forward voltage and low reverse leakage current

Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

Marking Symbol:

DB2J41100LSilicon epitaxial planar type

For rectification

Features

Code

1. Cathode

Panasonic SMini2-F5-BJEITA SC-90A

4R

PackagingEmbossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

IFSMJunction temperature Tj

3Forward current (average) *1 IF(AV) 1

V

°C

A

125 °C+85

1

22.5

1.25

0.7

1.7

0.130.35

0.5

2

1

Doc No. TT4-EA-11487Revision. 2

Established : 2009-10-09Revised : 2013-04-20

Page 2: DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100 of 4 Min Typ 15 100 6.8 2 Parameter Symbol Conditions UnitMax Forward

Product Standards

Schottky Barrier Diode

DB2J41100L

Electrical Characteristics Ta = 25 C 3 C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on

the charge of a human body and the leakage of current from the operating equipment.

3. *1 trr test circuit

Page

pFTerminal capacitance Ct VR = 10 V, f = 1 MHzns

0.50 0.58IR VR = 40 VVF IF = 1 A

21

Reverse recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100

of 4

Min Typ

15 100

6.8

2

Parameter Symbol Conditions UnitMaxForward voltage VReverse current μA

Bias Application Unit (N-50BU)

90%

Pulse Generator(PG-10N)Rs = 50 Ω

Wave Form Analyzer(SAS-8130)Ri = 50 Ω

tp = 2 μstr = 0.35 nsδ = 0.05

IF = 100 mAIR = 100 mARL = 100 Ω

10%

tr tp

trr

VR

IF

t

t

A

Input Pulse Output Pulse

Irr = 0.1 × IR

Doc No. TT4-EA-11487Revision. 2

Established : 2009-10-09Revised : 2013-04-20

Page 3: DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100 of 4 Min Typ 15 100 6.8 2 Parameter Symbol Conditions UnitMax Forward

Product Standards

Schottky Barrier Diode

DB2J41100L

Technical Data ( reference )

Page 3 of 4

IF - VF

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

0.0 0.1 0.2 0.3 0.4 0.5 0.6

Forward voltage VF (V)

For

war

d cu

rren

t IF

(A

)

Ta = 125 °C

-40 °C

25 °C

85 °C

IR - VR

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

0 5 10 15 20 25 30 35 40

Reverse voltage VR (V)

Rev

erse

cur

rent

IR

(A

)

Ta = 125 °C

25 °C

-40 °C

85 °C

Ct - VR

0

20

40

60

80

100

120

0 5 10 15 20 25 30 35 40

Reverse voltage VR (V)

Ter

min

al c

apac

itanc

e C

t (p

F) Ta = 25 °C

f = 1 MHz

Rth - t

1

10

100

1000

0.001 0.01 0.1 1 10 100 1000Time t (s)

The

rmal

res

ista

nce

Rth

(°C

/W)

(1)

Rth(j-l) = 50 °C/W

(1) Mounted on glass epoxy print board.(2) Mounted on alumina print board.Board size : 50 mm × 50 mm x 0.8 mmSolder in : 2 mm x 2 mm

(2)

IF(AV) - Tl

0

0.25

0.5

0.75

1

1.25

0 25 50 75 100 125 150 175Lead temperature Tl (°C)

For

war

d cu

rren

t (A

vera

ge)

IF(A

V)

(A

)

DC

1/4

tp/T

1/2

Sine Wave

VR = 20 VTj = 125 °C

tp

T

IF

PF(AV) - IF(AV)

0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.2 0.4 0.6 0.8 1 1.2Forward current (Average) IF(AV) (A)

Fo

rwa

rd p

ow

er

dis

sip

atio

n (

Ave

rag

e)

PF

(AV

) (

W)

DC

1/4

1/2Sine Wave

tp

T

IF

Doc No. TT4-EA-11487Revision. 2

Established : 2009-10-09Revised : 2013-04-20

Page 4: DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100 of 4 Min Typ 15 100 6.8 2 Parameter Symbol Conditions UnitMax Forward

Product Standards

Schottky Barrier Diode

DB2J41100L

Unit: mm

Page

SMini2-F5-B

4

4 of

Land Pattern (Reference) (Unit: mm)

2.5±

0.2

0.35±0.05

0.50±0.05

0.13+0.05-0.02

0.4±

0.1

0.7±

0.1

(0.15)

1.25±0.10

1.7±0.1

(5°)

(5°

)

0 to 0.05

1

2

2.4

0.9

0.9

1.1

0.9

Doc No. TT4-EA-11487Revision. 2

Established : 2009-10-09Revised : 2013-04-20

Page 5: DB2J411 - Global home | Industrial Devices & Solutions ... recovery time *1 trr IF = 100 mA, Irr = 0.1×IR, RL = 100 of 4 Min Typ 15 100 6.8 2 Parameter Symbol Conditions UnitMax Forward

Request for your special attention and precautionsin using the technical information and semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, thelaws and regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuitexamples of the products. No license is granted in and to any intellectual property right or other right owned byPanasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to theinfringement upon any such right owned by any other company which may arise as a result of the use of technicalinformation de-scribed in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment,communications equipment, measuring instruments and household appliances), or for specific applications as expresslystated in this book.Please consult with our sales staff in advance for information on the following applications, moreover please exchangedocuments separately on terms of use etc.: Special applications (such as for in-vehicle equipment, airplanes, aerospace,automotive equipment, traffic signaling equipment, combustion equipment, medical equipment and safety devices) inwhich exceptional quality and reliability are required, or if the failure or malfunction of the products may directlyjeopardize life or harm the human body.Unless exchanging documents on terms of use etc. in advance, it is to be understood that our company shall not be heldresponsible for any damage incurred as a result of or in connection with your using the products described in this bookfor any special application.

(4) The products and product specifications described in this book are subject to change without notice for modificationand/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operatingconditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceedthe range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Other-wise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break downand failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design,arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages,for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors(ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. We donot guarantee quality for disassembled products or the product re-mounted after removing from the mounting board.When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsedtime since first opening the packages.

(7) When reselling products described in this book to other companies without our permission and receiving any claim ofrequest from the resale destination, please understand that customers will bear the burden.

(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of ourcompany.

No.010618