1 23

TO-220

TAB

G(1)

C(2, TAB)

E(3)

G1C2TE3

Features• 10 μs of minimum short-circuit withstand time• VCE(sat) = 1.85 V (typ.) @ IC = 15 A• Tight parameter distribution• Positive VCE(sat) temperature coefficient• Low thermal resistance• Maximum junction temperature: TJ = 175 °C

Applications• Industrial drives• UPS• Solar• Welding

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimalbalance between inverter system performance and efficiency where the low-loss andthe short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer parallelingoperation.Product status link

STGP15M120F3

Product summary

Order code STGP15M120F3

Marking G15M120F3

Package TO-220

Packing Tube

Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package

STGP15M120F3

Datasheet

DS11255 - Rev 3 - August 2018For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 1200 V

ICContinuous collector current at TC = 25 °C 30 A

Continuous collector current at TC = 100 °C 15 A

ICP(1) Pulsed collector current 60 A

VGE Gate-emitter voltage ±20 V

PTOT Total dissipation at TC = 25 °C 259 W

Tstg Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

1. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case 0.58°C/W

RthJA Thermal resistance junction-ambient 62.5

STGP15M120F3Electrical ratings

DS11255 - Rev 3 page 2/15

2 Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 1200 V

VCE(sat) Collector-emitter saturation voltage

VGE = 15 V, IC = 15 A 1.85 2.3

V

VGE = 15 V, IC = 15 A,

TJ = 125 °C2.1

VGE = 15 V, IC = 30 A,

TJ = 175 °C2.2

VGE(th) Gate threshold voltage VCE = VGE, IC = 500 μA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 25 μA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitanceVCE = 25 V, f = 1 MHz,

VGE = 0 V

- 985 - pF

Coes Output capacitance - 118 - pF

Cres Reverse transfer capacitance - 38 - pF

Qg Total gate charge VCC = 960 V, IC = 15 A,

VGE = 0 to 15 V

(see Figure 23. Gate chargetest circuit)

- 53 - nC

Qge Gate-emitter charge - 8 - nC

Qgc Gate-collector charge - 32 - nC

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 600 V, IC = 15 A,

VGE = 15 V, RG = 22 Ω,

(see Figure 22. Test circuit forinductive load switching)

- 26 - ns

tr Current rise time - 12 - ns

(di/dt)on Turn-on current slope - 1000 - A/μs

td(off) Turn-off delay time - 122 - ns

tf Current fall time - 163 - ns

Eon(1) Turn-on switching energy - 0.55 - mJ

Eoff(2) Turn-off switching energy - 0.85 - mJ

Ets Total switching energy - 1.4 - mJ

STGP15M120F3Electrical characteristics

DS11255 - Rev 3 page 3/15

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 600 V, IC = 15 A,

VGE = 15 V, RG = 22 Ω,

TJ = 175 °C

(see Figure 22. Test circuit forinductive load switching)

- 25 - ns

tr Current rise time - 14 - ns

(di/dt)on Turn-on current slope - 857 - A/μs

td(off) Turn-off delay time - 136 - ns

tf Current fall time - 270 - ns

Eon(1) Turn-on switching energy - 1.1 - mJ

Eoff(2) Turn-off switching energy - 1.13 - mJ

Ets Total switching energy - 2.23 - mJ

tsc Short-circuit withstand timeVCC ≤ 600 V, VGE = 15 V,

TJstart = 150 °C10 - μs

1. Including the recovery of the external diode. The diode is the same of the co-packed STGWA15M120DF3 device.2. Including the tail of the collector current.

STGP15M120F3Electrical characteristics

DS11255 - Rev 3 page 4/15

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

Ptot

150

100

50

00 50 100

(W)

200

150 TC(°C)

250 VGE ≥ 15 V, TJ ≤ 175 °C

GIPD271020141420FSR

Figure 2. Collector current vs case temperature

IC

15

10

5

00 50 100

(A)

20

150 TC(°C)

25

VGE ≥ 15 V, TJ ≤ 175 °C30

GIPD291020141132FSR

Figure 3. Output characteristics (TJ = 25 °C)

IC

40

30

10

00 1 3

(A)

2 4

50

VCE(V)

20

9V

11V

13VVGE=15V

5

GIPD291020141140FSR

Figure 4. Output characteristics (TJ = 175°C)

IC

40

30

10

00 1 3

(A)

2 4

50

VCE(V)

20

9V

11V

13V

VGE=15V

5

7V

GIPD291020141151FSR

Figure 5. VCE(sat) vs junction temperature

VCE(sat)

2.0

1.2-50 0 100

(V)

50 150

2.4

TC(°C)

1.6

2.8

VGE=15V

IC=7.5A

IC=30A

IC=15A

3.2

GIPD291020141158FSR

Figure 6. VCE(sat) vs collector current

1.6

0.80 5 1510 20

2.0

IC(A)

1.2

2.4

VGE=15V Tj=175°C

Tj=25°C

Tj=-40°C

25

VCE(sat) (V)

2.8

3.2

GIPD291020141315FSR

STGP15M120F3Electrical characteristics (curves)

DS11255 - Rev 3 page 5/15

Figure 7. Collector current vs switching frequency

IC

40

30

10

01

(A)

10 f(kHz)

20

TC=80°C

TC=100°C

Rectangular current shape,(duty cycle=0.5, Vcc= 600V Rg=22Ω, Vge=0/15V, Tj=175 °C)

GIPD291020141321FSR

Figure 8. Safe operating area

IC

10

1

(A)

10 VCE(V)1

10µs

100µs

1ms

100

Single pulse, Tc=25°CTj<175°C, VGE=15V

1µs

1000

GIPD291020141330FSR

Figure 9. Transfer characteristicsIC

40

30

10

03

(A)

5 VGE(V)

20

Tj=175°C

Tj=25°C

7

50

9 11

VCE = 8V

GIPD291020141347FSR

Figure 10. Normalized VGE(th) vs junction temperature

VGE(th)

0.8

1.1

-50

(norm)

TC(°C)0.7

0

0.9

1.0

50 100 150

VCE=VGE

IC=500µA

GIPD291020141405FSR

Figure 11. Normalized V(BR)CES vs junction temperature

V(BR)CES

1.04

0.88-50

(norm)

TC(°C)

1.0

0 50 100 150

IC=2mA

0.92

0.96

GIPD291020141443FSR

Figure 12. Capacitance variations

C(pF)

10

0.1 VCE(V)

1000

1 10

100

Cies

Coes

Cres

1100

f= 1MHz

GIPD291020141507FSR

STGP15M120F3Electrical characteristics (curves)

DS11255 - Rev 3 page 6/15

Figure 13. Gate charge vs gate-emitter voltage

VGE(V)

00 Qg(nC)20 40

4

8

12

16

10 5030

VCC = 960 VIC = 15 AIG = 1 mA

GIPD291020141517FSR

Figure 14. Switching energy vs collector current

E(mJ)

00 IC(A)

0.5

5 10

1

15 20

VCC=600V, VGE=15VRg=22Ω, Tj=175°C

1.5

2

2.5

Eon

Eoff

25 30

GIPD291020141521FSR

Figure 15. Switching energy vs gate resistance

E(mJ)

0 Rg(Ω)

1

20 400.8

1.2

60 80

VCC=600V, VGE=15VIC=15A, Tj=175°C

1.4

1.6

1.8Eon

Eoff

100

GIPD291020141526FSR

Figure 16. Switching energy vs junction temperature

E(mJ)

TJ(°C)

0.6

500.5

0.7

100

VCC=600V, VGE=15VIC=15A, Rg=22Ω

0.8

0.9

1Eon

Eoff

1500

1.1

GIPD291020141532FSR

Figure 17. Switching energy vs collector emitter voltage

E(mJ)

200 VCE(V)

1.1

400 6000.3

1.9

800

VGE=15V, Tj=175°CIC=15A, Rg=22Ω

Eon

Eoff

0.7

1.5

GIPD291020141536FSR

Figure 18. Short-circuit time and current vs VGE

tsc(µs)

9 VGE(V)

30

10 1110

12

VCC ≤ 600VTJ ≤150 °C Isc

tsc

20

40

13 14 15

60

20

40

80

Isc(A)GIPD291020141543FSR

STGP15M120F3Electrical characteristics (curves)

DS11255 - Rev 3 page 7/15

Figure 19. Switching times vs collector current

t(ns)

0 IC(A)5 101

15 20

VCC=600V,Tj=175°C,

VGE=15VRg=22Ω

tdoff

tdon

10

tf

tr

25 30

100

GIPD291020141715FSR

Figure 20. Switching times vs gate resistance

t(ns)

0 Rg(Ω)20 40

10

60 80

VCC=600V,Tj=175°C,

VGE=15VIC=15A

tdoff

tdon

100

tr

tf

1001

GIPD291020141725FSR

Figure 21. Thermal impedance

10 10 10 10 10 tp(s)-5 -4 -3 -2 -110-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/t

tp

t

Single pulse

δ=0.5

ZthTO2T_B

STGP15M120F3Electrical characteristics (curves)

DS11255 - Rev 3 page 8/15

3 Test circuits

Figure 22. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 23. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 24. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

STGP15M120F3Test circuits

DS11255 - Rev 3 page 9/15

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

STGP15M120F3Package information

DS11255 - Rev 3 page 10/15

4.1 TO-220 type A package information

Figure 25. TO-220 type A package outline

0015988_typeA_Rev_21

STGP15M120F3TO-220 type A package information

DS11255 - Rev 3 page 11/15

Table 6. TO-220 type A package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

STGP15M120F3TO-220 type A package information

DS11255 - Rev 3 page 12/15

Revision history

Table 7. Document revision history

Date Version Changes

10-Sep-2015 1 Initial release.

17-Apr-2018 2

Removed maturity status indication from cover page. The document status isproduction data.

Added Section 2.1 Electrical characteristics (curves).

Updated Section 4.1 TO-220 type A package information.

Minor text changes

01-Aug-2018 3 Updated Table 5. Switching characteristics (inductive load).

STGP15M120F3

DS11255 - Rev 3 page 13/15

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

STGP15M120F3Contents

DS11255 - Rev 3 page 14/15

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

STGP15M120F3

DS11255 - Rev 3 page 15/15